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1. 发明授权

US07063919B2 Lithographic template having a repaired gap defect method of repair and use 失效
标题翻译：具有修复间隙缺陷修复和使用方法的平版印刷模板
公开(公告)号：US07063919B2
公开(公告)日：2006-06-20
申请号：US10209167
申请日：2002-07-31
申请人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
发明人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
IPC分类号： G03H1/04
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/60 , G03F7/0002
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法，以及用于制造具有改进的光刻模板的半导体器件的方法。光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（40）的制造。

2. 发明授权

US5266183A Method for plating an x-ray mask 失效
标题翻译：电镀X射线掩模的方法
公开(公告)号：US5266183A
公开(公告)日：1993-11-30
申请号：US881111
申请日：1992-05-11
申请人： William J. Dauksher , Douglas J. Resnick
发明人： William J. Dauksher , Douglas J. Resnick
IPC分类号： G03F1/16 , C25D3/48 , G21K3/00 , H01L21/027
CPC分类号： C25D3/48
摘要： A method for making an x-ray mask having a low-stress absorber layer. A substrate is placed in an electroplating system and an electroplating solution is provided to the electroplating system. The electroplating solution has a gold sulfite based component and a thallium based component. The thallium based component is at a concentration of at least 20 milligrams per liter of electroplating solution. A gold containing absorber layer is electrodeposited onto the substrate. A high concentration of thallium produces an absorber layer insensitive to the brightener concentration in the electroplating solution and having a stress less than approximately 1.times.10.sup.8 dynes/cm.sup.2. In addition, the absorber has a small grain size, a low surface roughness, and a low defect density. Thus, the absorber layer is easier to inspect and, if required, to repair.
摘要翻译：一种制造具有低应力吸收层的X射线掩模的方法。将基板放置在电镀系统中，并将电镀溶液提供给电镀系统。电镀溶液具有亚硫酸金属组分和基于铊的组分。基于铊的组分的浓度为每升电镀溶液至少20毫克。将含金吸收层电沉积到基底上。高浓度的铊产生对电镀溶液中的增白剂浓度不敏感并具有小于约1×10 8达因/ cm 2的应力的吸收层。此外，吸收体具有小的晶粒尺寸，低表面粗糙度和低缺陷密度。因此，吸收层更容易检查，如果需要，进行修理。

3. 发明授权

US07083880B2 Lithographic template and method of formation and use 失效
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US07083880B2
公开(公告)日：2006-08-01
申请号：US10222734
申请日：2002-08-15
申请人： Albert Alec Talin , Jeffrey H. Baker , William J. Dauksher , Andy Hooper , Douglas J. Resnick
发明人： Albert Alec Talin , Jeffrey H. Baker , William J. Dauksher , Andy Hooper , Douglas J. Resnick
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , C23C14/086 , G03F7/0002 , G03F7/0017 , G03F7/093
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).
摘要翻译：本发明涉及半导体器件，微电子器件，微电子机械器件，微流体器件，光子器件，更具体地涉及光刻模板，形成光刻模板的方法和用光刻模板形成器件的方法。光刻模板（10）形成为具有基板（12），通过低压溅射形成在基板（12）的表面（14）上的透明导电层（16）至允许优选90％透射率的厚度紫外光，以及形成在透明导电层（16）的表面（18）上的图形层（20）。模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。然后通过模板施加辐射，以便固化辐射敏感材料的部分并限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（30）的制造。

4. 发明授权

US5464711A Process for fabricating an X-ray absorbing mask 失效
标题翻译：用于制造X射线吸收掩模的方法
公开(公告)号：US5464711A
公开(公告)日：1995-11-07
申请号：US283325
申请日：1994-08-01
申请人： C. Joseph Mogab , William J. Dauksher , Douglas J. Resnick
发明人： C. Joseph Mogab , William J. Dauksher , Douglas J. Resnick
IPC分类号： G03F1/22 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22
摘要： A process for the fabrication of an X-ray absorbing mask includes providing a silicon substrate (10) having a front surface (16) and a back surface (18). A membrane layer (12) is formed on the front surface (16). In one embodiment of the invention, an etch stop layer (14) and an X-ray absorbing layer (20) are sequentially formed over the membrane layer (12). In a preferred embodiment, the X-ray absorbing layer (20) is tantalum silicon nitride deposited by RF sputter deposition directly onto the layers overlying the silicon substrate (10). The structure is then annealed at a temperature sufficient to reduce the internal stress in the X-ray absorbing layer (20). Finally, the X-ray absorbing layer is patterned to form a masking pattern (30, 36) on the membrane layer (12).
摘要翻译：一种用于制造X射线吸收掩模的方法包括提供具有前表面（16）和后表面（18）的硅衬底（10）。在前表面（16）上形成膜层（12）。在本发明的一个实施例中，在膜层（12）上依次形成蚀刻停止层（14）和X射线吸收层（20）。在优选实施例中，X射线吸收层（20）是通过RF溅射沉积直接沉积在覆盖硅衬底（10）的层上沉积的氮化硅钽。然后将该结构在足以降低X射线吸收层（20）中的内部应力的温度下退火。最后，将X射线吸收层图案化以在膜层（12）上形成掩模图案（30,36）。

5. 发明授权

US07425392B2 Lithographic template and method of formation and use 失效
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US07425392B2
公开(公告)日：2008-09-16
申请号：US11213071
申请日：2005-08-26
申请人： Kevin J. Nordquist , Jeffrey H. Baker , William J. Dauksher
发明人： Kevin J. Nordquist , Jeffrey H. Baker , William J. Dauksher
IPC分类号： G03F1/00
CPC分类号： G03F7/0017 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template is provided. The lithographic template (10) and the method of making comprises forming a transparent conductive layer (16) over a substrate (12). A SiCN layer (18) is formed over the transparent conductive layer (16), and a patterning layer (20) formed on the SiCN layer (18). The SiCN layer (18) is converted to an SiO2 layer by applying an O2 plasma (23). The SiO2 layer prevents damage to the transparent conductive layer (16) during cleaning and provides a binding mechanism for the imprint release coating.
摘要翻译：提供了光刻模板，形成光刻模板的方法以及用该光刻模板形成器件的方法。光刻模板（10）和制造方法包括在衬底（12）上形成透明导电层（16）。在透明导电层（16）上形成SiCN层（18），形成在SiCN层（18）上的图形层（20）。通过施加O 2等离子体（23）将SiCN层（18）转化为SiO 2层。 SiO 2层防止在清洁期间对透明导电层（16）的损坏，并提供用于压印剥离涂层的结合机构。

6. 发明授权

US06797440B2 Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device 有权
公开(公告)号：US06797440B2
公开(公告)日：2004-09-28
申请号：US10213344
申请日：2002-08-06
申请人： Cesar M. Garza , Wei E. Wu , Bernard J. Roman , Pawitter J. S. Mangat , Kevin J. Nordquist , William J. Dauksher
发明人： Cesar M. Garza , Wei E. Wu , Bernard J. Roman , Pawitter J. S. Mangat , Kevin J. Nordquist , William J. Dauksher
IPC分类号： G03F900
CPC分类号： G03F1/29
摘要： A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.

7. 发明申请

US20090008748A1 ULTRA-THIN DIE AND METHOD OF FABRICATING SAME 有权
标题翻译：超薄薄膜及其制造方法
公开(公告)号：US20090008748A1
公开(公告)日：2009-01-08
申请号：US12211556
申请日：2008-09-16
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
IPC分类号： H01L29/06
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

8. 发明授权

US07432024B2 Lithographic template and method of formation and use 有权
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US07432024B2
公开(公告)日：2008-10-07
申请号：US11423621
申请日：2006-06-12
申请人： Albert Alec Talin , Jeffrey H. Baker , William J. Dauksher , Andy Hooper , Douglas J. Resnick
发明人： Albert Alec Talin , Jeffrey H. Baker , William J. Dauksher , Andy Hooper , Douglas J. Resnick
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , C23C14/086 , G03F7/0002 , G03F7/0017 , G03F7/093
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).
摘要翻译：本发明涉及半导体器件，微电子器件，微电子机械器件，微流体器件，光子器件，更具体地涉及光刻模板，形成光刻模板的方法和用光刻模板形成器件的方法。光刻模板（10）形成为具有基板（12），通过低压溅射形成在基板（12）的表面（14）上的透明导电层（16）至允许优选90％透射率的厚度紫外光，以及形成在透明导电层（16）的表面（18）上的图形层（20）。模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。然后通过模板施加辐射，以便固化辐射敏感材料的部分并限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（30）的制造。

9. 发明授权

US07163888B2 Direct imprinting of etch barriers using step and flash imprint lithography 失效
标题翻译：使用步骤和闪光压印光刻技术直接刻印蚀刻阻挡层
公开(公告)号：US07163888B2
公开(公告)日：2007-01-16
申请号：US10995800
申请日：2004-11-22
申请人： Kathy A. Gehoski , William J. Dauksher , Ngoc V. Le , Douglas J. Resnick
发明人： Kathy A. Gehoski , William J. Dauksher , Ngoc V. Le , Douglas J. Resnick
IPC分类号： H01L21/4763
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/76814 , H01L21/76838
摘要： A direct imprinting process for Step and Flash Imprint Lithography includes providing (40) a substrate (12); forming (44) an etch barrier layer (14) on the substrate; patterning (46) the etch barrier layer with a template (16) while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer (20) on the substrate; and performing (48) an etch to substantially remove the residual layer. Optionally, a patterning layer (52) may be formed on the substrate (12) prior to forming the etch barrier layer (14). Additionally, an adhesive layer (13) may be applied (42) between the substrate (12) and the etch barrier layer (14).
摘要翻译：步进和闪光印记光刻技术的直接印刷工艺包括提供（40）基材（12）; 在衬底上形成（44）蚀刻阻挡层（14）; 在通过模板的紫外线固化的同时用模板（16）对蚀刻阻挡层进行图案化（46），从而在衬底上产生图案化的蚀刻阻挡层和残余层（20）; 并执行（48）蚀刻以基本上去除残留层。可选地，在形成蚀刻阻挡层（14）之前，可以在衬底（12）上形成图案化层（52）。另外，可以在衬底（12）和蚀刻阻挡层（14）之间施加粘合剂层（13）（42）。

10. 发明授权

US06368752B1 Low stress hard mask formation method during refractory radiation mask fabrication 失效
$Low stress hard mask formation method during refractory radiation mask fabrication$
标题翻译：耐火辐射掩模制造中的低应力硬掩模形成方法
公开(公告)号：US06368752B1
公开(公告)日：2002-04-09
申请号：US08740402
申请日：1996-10-29
申请人： William J. Dauksher , Douglas J. Resnick
发明人： William J. Dauksher , Douglas J. Resnick
IPC分类号： G03F900
CPC分类号： G03F1/22
摘要： A method of forming a hard mask for use in the formation of a refractory radiation mask including providing a membrane structure, forming a radiation absorbing layer to be patterned on the membrane structure, forming a hard mask layer on the surface of the membrane structure, the hard mask layer including a material system having a nominally zero stress and therefore reduced distortion of the membrane structure, and patterning the hard mask layer.
摘要翻译：一种形成用于形成耐火辐射掩模的硬掩模的方法，包括提供膜结构，在膜结构上形成待图案化的辐射吸收层，在膜结构的表面上形成硬掩模层，硬掩模层包括具有标称零应力的材料体系，因此减小了膜结构的变形，并且对硬掩模层进行了图案化。

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