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1. 发明授权

US07425392B2 Lithographic template and method of formation and use 失效
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US07425392B2
公开(公告)日：2008-09-16
申请号：US11213071
申请日：2005-08-26
申请人： Kevin J. Nordquist , Jeffrey H. Baker , William J. Dauksher
发明人： Kevin J. Nordquist , Jeffrey H. Baker , William J. Dauksher
IPC分类号： G03F1/00
CPC分类号： G03F7/0017 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template is provided. The lithographic template (10) and the method of making comprises forming a transparent conductive layer (16) over a substrate (12). A SiCN layer (18) is formed over the transparent conductive layer (16), and a patterning layer (20) formed on the SiCN layer (18). The SiCN layer (18) is converted to an SiO2 layer by applying an O2 plasma (23). The SiO2 layer prevents damage to the transparent conductive layer (16) during cleaning and provides a binding mechanism for the imprint release coating.
摘要翻译：提供了光刻模板，形成光刻模板的方法以及用该光刻模板形成器件的方法。光刻模板（10）和制造方法包括在衬底（12）上形成透明导电层（16）。在透明导电层（16）上形成SiCN层（18），形成在SiCN层（18）上的图形层（20）。通过施加O 2等离子体（23）将SiCN层（18）转化为SiO 2层。 SiO 2层防止在清洁期间对透明导电层（16）的损坏，并提供用于压印剥离涂层的结合机构。

2. 发明授权

US07063919B2 Lithographic template having a repaired gap defect method of repair and use 失效
标题翻译：具有修复间隙缺陷修复和使用方法的平版印刷模板
公开(公告)号：US07063919B2
公开(公告)日：2006-06-20
申请号：US10209167
申请日：2002-07-31
申请人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
发明人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
IPC分类号： G03H1/04
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/60 , G03F7/0002
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法，以及用于制造具有改进的光刻模板的半导体器件的方法。光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（40）的制造。

3. 发明授权

US06797440B2 Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device 有权
公开(公告)号：US06797440B2
公开(公告)日：2004-09-28
申请号：US10213344
申请日：2002-08-06
申请人： Cesar M. Garza , Wei E. Wu , Bernard J. Roman , Pawitter J. S. Mangat , Kevin J. Nordquist , William J. Dauksher
发明人： Cesar M. Garza , Wei E. Wu , Bernard J. Roman , Pawitter J. S. Mangat , Kevin J. Nordquist , William J. Dauksher
IPC分类号： G03F900
CPC分类号： G03F1/29
摘要： A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.

4. 发明授权

US06517977B2 Lithographic template and method of formation and use 有权
公开(公告)号：US06517977B2
公开(公告)日：2003-02-11
申请号：US09819388
申请日：2001-03-28
申请人： Doug J. Resnick , Kevin J. Nordquist
发明人： Doug J. Resnick , Kevin J. Nordquist
IPC分类号： G03F900
CPC分类号： B29C43/003 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (20, 30, 42) is formed having a substrate (22, 32) and a template pedestal (24, 34) having formed thereon an uppermost surface an etched pattern or relief image (26, 36, 48). The template (20, 30, 42) is used in the fabrication of a semiconductor device (44) for affecting a pattern in the device (44) by positioning the template (20, 30, 42) in close proximity to semiconductor device (44) having a radiation sensitive material (50) formed thereon and applying a pressure (52) to cause the radiation sensitive material (50) to flow into the relief image (48) present on the template (42). Radiation (53) is then applied through the template (42) so as to further cure portions of the radiation sensitive material (50) and further define the pattern in the radiation sensitive material (50). The template (20, 30, 42) is then removed to complete fabrication of semiconductor device (44).

5. 发明授权

US6137213A Field emission device having a vacuum bridge focusing structure and method 失效
标题翻译：具有真空桥聚焦结构和方法的场发射装置
公开(公告)号：US6137213A
公开(公告)日：2000-10-24
申请号：US176150
申请日：1998-10-21
申请人： Curtis D. Moyer , Peter A. Smith , Robert H. Reuss , Troy A. Trottier , Steven A. Voight , Diane A. Carrillo , Kevin J. Nordquist , Jaynal A. Molla , David W. Jacobs , Kathleen A. Tobin
发明人： Curtis D. Moyer , Peter A. Smith , Robert H. Reuss , Troy A. Trottier , Steven A. Voight , Diane A. Carrillo , Kevin J. Nordquist , Jaynal A. Molla , David W. Jacobs , Kathleen A. Tobin
IPC分类号： H01J1/304 , H01J29/46 , H01J29/94 , H01J31/12 , H01J1/02
CPC分类号： H01J29/467 , H01J31/127
摘要： A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and a vacuum bridge focusing structure (118, 158, 218, 318) for focusing electrons (119) emitted by electron emitters (116). Vacuum bridge focusing structure (118, 158, 218, 318) has landings (121, 122, 221, 322), which are attached to cathode plate (102, 180), and further has bridges (120, 220, 320), which extend above and beyond landings (121, 122, 221, 322, 421) to provide a self-supporting structure that is spaced apart from cathode plate (102, 180).
摘要翻译：场致发射器件（100,150）包括具有电子发射器（116）的阴极板（102,180），具有由电子激活的荧光体（107,207,307,407）的阳极板（104,170））和由电子发射器（116）发射的用于聚焦电子（119）的真空电桥聚焦结构（118,158,218,318）。真空桥聚焦结构（118,158,218,318）具有连接到阴极板（102,180）上的平台（121,122,221,322），并且还具有桥梁（120,220,320），其中（121,122,221,322,421）之上和之外延伸以提供与阴极板（102,180）间隔开的自支撑结构。

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