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1. 发明申请

US20050090081A1 Single electron transistor manufacturing method by electro-migration of metallic nanoclusters 有权
标题翻译：单电子晶体管制造方法通过金属纳米团簇的电迁移
公开(公告)号：US20050090081A1
公开(公告)日：2005-04-28
申请号：US10695479
申请日：2003-10-28
申请人： Danilo Mascolo , Rossana Scaldaferri , Teresa Napolitano , Valeria Casuscelli , Luigi Occhipinti
发明人： Danilo Mascolo , Rossana Scaldaferri , Teresa Napolitano , Valeria Casuscelli , Luigi Occhipinti
IPC分类号： B82B1/00 , B82B3/00 , H01L21/335 , H01L29/76 , H01L49/00 , C30B1/00
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/66439 , H01L49/006 , Y10S438/969
摘要： A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.
摘要翻译：一种方法通过电纳米聚集体的电迁移制造单电子晶体管器件，其中所述纳米簇在金属上被钝化并且在室温下在非均匀电场的控制下被迫在光刻图案化衬底上组装。金属钝化纳米团簇的受控迁移和所需位置基于介电电泳过程。

2. 发明授权

US07067341B2 Single electron transistor manufacturing method by electro-migration of metallic nanoclusters 有权
标题翻译：单电子晶体管制造方法通过电迁移金属纳米团簇
公开(公告)号：US07067341B2
公开(公告)日：2006-06-27
申请号：US10695479
申请日：2003-10-28
申请人： Danilo Mascolo , Rossana Scaldaferri , Teresa Napolitano , Valeria Casuscelli , Luigi Occhipinti
发明人： Danilo Mascolo , Rossana Scaldaferri , Teresa Napolitano , Valeria Casuscelli , Luigi Occhipinti
IPC分类号： H01L21/00
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/66439 , H01L49/006 , Y10S438/969
摘要： A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.
摘要翻译：一种方法通过电纳米聚集体的电迁移制造单电子晶体管器件，其中所述纳米簇在金属上被钝化并且在室温下在非均匀电场的控制下被迫在光刻图案化衬底上组装。金属钝化纳米团簇的受控迁移和所需位置基于介电电泳过程。

3. 发明授权

US07598116B2 Organic thin film transistor and process for manufacturing same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07598116B2
公开(公告)日：2009-10-06
申请号：US11538390
申请日：2006-10-03
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： A process for manufacturing an organic thin film transistor includes the steps of arranging a shaping element having a first profile defining a slot, forming a mold suitable to define a cavity with the shaping element, depositing source and drain layers, an active material layer and a dielectric layer within the cavity, depositing a gate layer in the slot of the shaping element, and transferring the gate layer in contact with the dielectric layer by means of the shaping element.
摘要翻译：制造有机薄膜晶体管的方法包括以下步骤：布置具有限定狭缝的第一轮廓的成形元件，形成适于与成形元件限定空腔的模具，沉积源极和漏极层，活性材料层和介电层，在成形元件的槽中沉积栅极层，并通过成形元件将栅极层与介电层接触。

4. 发明申请

US20090236593A1 ORGANIC THIN FILM TRANSISTOR AND PROCESS FOR MANUFACTURING SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20090236593A1
公开(公告)日：2009-09-24
申请号：US12478475
申请日：2009-06-04
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/30
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： An organic thin film transistor includes a dielectric layer and an active layer overlapping the dielectric layer, a source contact and a drain contact arranged on a surface of the active layer opposite the dielectric layer and mutually separated by an intermediate region, the source contact and drain contact having first and second inner walls, respectively, facing the intermediate region, and a gate contact arranged on a portion of another surface of the dielectric layer opposite the active layer and having first and second side walls aligned with the first and second inner walls, respectively.
摘要翻译：有机薄膜晶体管包括电介质层和与电介质层重叠的有源层，源极接触和漏极接触，布置在与电介质层相对的有源层的表面上并由中间区相互分离，源极接触和漏极接触件具有分别面对中间区域的第一和第二内壁以及布置在电介质层的与有源层相对的另一表面的一部分上并且具有与第一和第二内壁对准的第一和第二侧壁的栅极接触，分别。

5. 发明授权

US08436340B2 Cross-point cell nanoarray with anisotropic active organic layer 有权
标题翻译：具有各向异性活性有机层的交叉点细胞纳米阵列
公开(公告)号：US08436340B2
公开(公告)日：2013-05-07
申请号：US12638854
申请日：2009-12-15
申请人： Teresa Napolitano , Claudio De Rosa , Finizia Auriemma , Odda Ruiz De Ballesteros , Giovanni Palomba
发明人： Teresa Napolitano , Claudio De Rosa , Finizia Auriemma , Odda Ruiz De Ballesteros , Giovanni Palomba
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L27/285 , G11C13/0014 , G11C13/0016 , H01L51/0575 , H01L51/0591
摘要： A cross-point cell nanoarray comprises a mechanical support substrate, first and second orders of uniformly spaced parallel electrodes separated by an electrically active organic film and orthogonally arranged to form an array of cross-point cells, individually addressable by biasing the respective opposite electrodes, by selecting them among those of the respective orders, over a planar area of the substrate. The active organic resin layer includes a block copolymer of a major component resin and of at least one different minor component resin, configured to promote formation of large-scale ordered nanostructures through phase segregation, due to block incompatibility and self-assembly properties of the blocks. Polymeric bocks of the ordered nanostructures configured to sequester conductive nanoparticles and/or conductive nanoparticle clusters originally dispersed in the component organic resins, subtracting them from the surrounding matrix copolymer. Preferential electric current paths across the thickness of the active organic layer at cross-over points are thus created.
摘要翻译：交叉点电池纳米阵列包括机械支撑衬底，由电活性有机膜分隔开的正交布置以形成交叉点电池阵列的均匀间隔平行电极的第一级和第二级，通过偏置相应的相对电极单独寻址，通过在基板的平面区域上选择它们中的各个顺序。活性有机树脂层包括主要组分树脂和至少一种不同的次要组分树脂的嵌段共聚物，其被构造成由于块的不相容性和块的自组装性而促进通过相分离形成大规模有序纳米结构。有序纳米结构的聚合体结构被配置成隔离最初分散在组分有机树脂中的导电纳米颗粒和/或导电纳米颗粒簇，从周围基质共聚物中减去它们。因此，在交叉点处穿过有源有机层的厚度的优先电流路径被产生。

6. 发明申请

US20050031927A1 Polyelectrolyte membrane, method for its production and fuel cell using said polyelectrolyte membrane 审中-公开
标题翻译：聚电解质膜，其制造方法和使用所述聚电解质膜的燃料电池
公开(公告)号：US20050031927A1
公开(公告)日：2005-02-10
申请号：US10879696
申请日：2004-06-29
申请人： Teresa Napolitano , Salvatore Coffa , Giuseppe Mensitieri , Anna Borriello , Luigi Nicolais
发明人： Teresa Napolitano , Salvatore Coffa , Giuseppe Mensitieri , Anna Borriello , Luigi Nicolais
IPC分类号： B01D67/00 , B01D71/28 , B01D71/82 , C08J5/20 , C08J5/22 , C25B13/00 , C25C7/04 , H01M6/18 , H01M8/10
CPC分类号： C08J5/225 , B01D67/0011 , B01D71/28 , B01D71/82 , B01D2325/26 , B01D2325/42 , C08J2325/04 , H01M8/1023 , H01M8/1072 , H01M8/1081 , H01M8/1088 , H01M2300/0082 , Y02P70/56
摘要： A polyelectrolyte membrane includes at least one syndiotactic styrenic polymer or copolymer in its clathrate form. The syndiotactic styrenic polymer or copolymer in its clathrate form is syndiotactic polystyrene. The polyelectrolyte membrane has a good electrical conductivity as well as good mechanical properties. This type of membrane is used for fuel cells and similar electrochemical applications.
摘要翻译：聚电解质膜包括至少一种间同立构苯乙烯聚合物或其包合物形式的共聚物。间规苯乙烯聚合物或其包合物形式的共聚物是间同立构聚苯乙烯。聚电解质膜具有良好的导电性以及良好的机械性能。这种类型的膜用于燃料电池和类似的电化学应用。

7. 发明申请

US20100155690A1 CROSS-POINT CELL NANOARRAY WITH ANISOTROPIC ACTIVE ORGANIC LAYER 有权
标题翻译：具有各向异性活性有机层的交叉点电池纳米级
公开(公告)号：US20100155690A1
公开(公告)日：2010-06-24
申请号：US12638854
申请日：2009-12-15
申请人： Teresa Napolitano , Claudio De Rosa , Finizia Auriemma , Odda Ruiz De Ballesteros , Giovanni Palomba
发明人： Teresa Napolitano , Claudio De Rosa , Finizia Auriemma , Odda Ruiz De Ballesteros , Giovanni Palomba
IPC分类号： H01L47/00 , H01L51/10 , H01L51/40
CPC分类号： H01L27/285 , G11C13/0014 , G11C13/0016 , H01L51/0575 , H01L51/0591
摘要： A cross-point cell nanoarray comprises a mechanical support substrate, first and second orders of uniformly spaced parallel electrodes separated by an electrically active organic film and orthogonally arranged to form an array of cross-point cells, individually addressable by biasing the respective opposite electrodes, by selecting them among those of the respective orders, over a planar area of the substrate. The active organic resin layer includes a block copolymer of a major component resin and of at least one different minor component resin, configured to promote formation of large-scale ordered nanostructures through phase segregation, due to block incompatibility and self-assembly properties of the blocks. Polymeric bocks of the ordered nanostructures configured to sequester conductive nanoparticles and/or conductive nanoparticle clusters originally dispersed in the component organic resins, subtracting them from the surrounding matrix copolymer. Preferential electric current paths across the thickness of the active organic layer at cross-over points are thus created.
摘要翻译：交叉点电池纳米阵列包括机械支撑衬底，由电活性有机膜分隔开的正交布置以形成交叉点电池阵列的均匀间隔平行电极的第一级和第二级，通过偏置相应的相对电极单独寻址，通过在基板的平面区域上选择它们中的各个顺序。活性有机树脂层包括主要组分树脂和至少一种不同的次要组分树脂的嵌段共聚物，其被构造成由于块的不相容性和块的自组装性而促进通过相分离形成大规模有序纳米结构。有序纳米结构的聚合体结构被配置成隔离最初分散在组分有机树脂中的导电纳米颗粒和/或导电纳米颗粒簇，从周围基质共聚物中减去它们。因此，在交叉点处穿过有源有机层的厚度的优先电流路径被产生。

8. 发明授权

US07485492B2 Process for manufacturing a non-volatile memory structure via soft lithography 有权
标题翻译：通过软光刻制造非易失性存储器结构的方法
公开(公告)号：US07485492B2
公开(公告)日：2009-02-03
申请号：US11697990
申请日：2007-04-09
申请人： Raffaele Vecchione , Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Raffaele Vecchione , Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G11C2213/77 , H01L51/0022 , H01L2251/105
摘要： A process for manufacturing a non-volatile memory structure, in particular of a cross-point type provided with an array of memory cells, including forming bottom electrodes on a substrate; forming areas of active material on the bottom electrodes; and forming top electrodes on the areas of active material. The memory cells are defined at the intersection of the bottom electrode with the top electrode. At least one from among the steps of forming bottom electrodes, forming areas of active material, and forming top electrodes includes using soft-lithography techniques, chosen from amongst “microtransfer molding”, “micromolding in capillary”, and “microcontact printing”. According to a first type of structure, the step of forming areas of active material includes forming strips of active material in a way self-aligned with respect to the bottom electrodes or the top electrodes; according to a different type of structure, the step of forming areas of active material envisages forming monolayer or multilayer pads between the bottom electrodes and the top electrodes.
摘要翻译：一种用于制造非易失性存储器结构的方法，特别是具有存储单元阵列的交叉点型，包括在衬底上形成底部电极; 在底部电极上形成活性材料区域; 并在活性材料的区域上形成顶部电极。存储单元被限定在底部电极与顶部电极的交叉处。从形成底部电极，形成活性材料的区域和形成顶部电极的步骤中的至少一个包括使用从“微转移成型”，“毛细管中的微成型”和“微接触印刷”中选择的软光刻技术。根据第一类型的结构，形成活性材料区域的步骤包括以相对于底部电极或顶部电极自对准的方式形成活性材料条带; 根据不同类型的结构，形成活性材料区域的步骤设想在底部电极和顶部电极之间形成单层或多层焊盘。

9. 发明申请

US20070105268A1 ORGANIC THIN FILM TRANSISTOR AND PROCESS FOR MANUFACTURING SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20070105268A1
公开(公告)日：2007-05-10
申请号：US11538390
申请日：2006-10-03
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： A process for manufacturing an organic thin film transistor includes the steps of arranging a shaping element having a first profile defining a slot, forming a mold suitable to define a cavity with the shaping element, depositing source and drain layers, an active material layer and a dielectric layer within the cavity, depositing a gate layer in the slot of the shaping element, and transferring the gate layer in contact with the dielectric layer by means of the shaping element
摘要翻译：制造有机薄膜晶体管的方法包括以下步骤：布置具有限定狭缝的第一轮廓的成形元件，形成适于与成形元件限定空腔的模具，沉积源极和漏极层，活性材料层和在腔内的介电层，在成形元件的槽中沉积栅极层，并通过成形元件转移与电介质层接触的栅极层

10. 发明授权

US08653505B2 Organic thin film transistor and process for manufacturing same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US08653505B2
公开(公告)日：2014-02-18
申请号：US12478475
申请日：2009-06-04
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/05
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： An organic thin film transistor includes a dielectric layer and an active layer overlapping the dielectric layer, a source contact and a drain contact arranged on a surface of the active layer opposite the dielectric layer and mutually separated by an intermediate region, the source contact and drain contact having first and second inner walls, respectively, facing the intermediate region, and a gate contact arranged on a portion of another surface of the dielectric layer opposite the active layer and having first and second side walls aligned with the first and second inner walls, respectively.
摘要翻译：有机薄膜晶体管包括电介质层和与电介质层重叠的有源层，源极接触和漏极接触，布置在与电介质层相对的有源层的表面上并由中间区相互分离，源极接触和漏极接触件具有分别面对中间区域的第一和第二内壁以及布置在电介质层的与有源层相对的另一表面的一部分上并且具有与第一和第二内壁对准的第一和第二侧壁的栅极接触，分别。

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