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1. 发明授权

US08653505B2 Organic thin film transistor and process for manufacturing same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US08653505B2
公开(公告)日：2014-02-18
申请号：US12478475
申请日：2009-06-04
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/05
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： An organic thin film transistor includes a dielectric layer and an active layer overlapping the dielectric layer, a source contact and a drain contact arranged on a surface of the active layer opposite the dielectric layer and mutually separated by an intermediate region, the source contact and drain contact having first and second inner walls, respectively, facing the intermediate region, and a gate contact arranged on a portion of another surface of the dielectric layer opposite the active layer and having first and second side walls aligned with the first and second inner walls, respectively.
摘要翻译：有机薄膜晶体管包括电介质层和与电介质层重叠的有源层，源极接触和漏极接触，布置在与电介质层相对的有源层的表面上并由中间区相互分离，源极接触和漏极接触件具有分别面对中间区域的第一和第二内壁以及布置在电介质层的与有源层相对的另一表面的一部分上并且具有与第一和第二内壁对准的第一和第二侧壁的栅极接触，分别。

2. 发明申请

US20070243679A1 PROCESS FOR MANUFACTURING A NON-VOLATILE MEMORY STRUCTURE VIA SOFT LITHOGRAPHY 有权
标题翻译：通过软绘图制造非易失性存储器结构的过程
公开(公告)号：US20070243679A1
公开(公告)日：2007-10-18
申请号：US11697990
申请日：2007-04-09
申请人： Raffaele Vecchione , Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Raffaele Vecchione , Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L21/8242
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G11C2213/77 , H01L51/0022 , H01L2251/105
摘要： A process for manufacturing a non-volatile memory structure, in particular of a cross-point type provided with an array of memory cells, including forming bottom electrodes on a substrate; forming areas of active material on the bottom electrodes; and forming top electrodes on the areas of active material. The memory cells are defined at the intersection of the bottom electrode with the top electrode. At least one from among the steps of forming bottom electrodes, forming areas of active material, and forming top electrodes includes using soft-lithography techniques, chosen from amongst “microtransfer molding”, “micromolding in capillary”, and “microcontact printing”. According to a first type of structure, the step of forming areas of active material includes forming strips of active material in a way self-aligned with respect to the bottom electrodes or the top electrodes; according to a different type of structure, the step of forming areas of active material envisages forming monolayer or multilayer pads between the bottom electrodes and the top electrodes.
摘要翻译：一种用于制造非易失性存储器结构的方法，特别是具有存储单元阵列的交叉点型，包括在衬底上形成底部电极; 在底部电极上形成活性材料区域; 并在活性材料的区域上形成顶部电极。存储单元被限定在底部电极与顶部电极的交叉处。从形成底部电极，形成活性材料的区域和形成顶部电极的步骤中的至少一个包括使用从“微转移成型”，“毛细管中的微成型”和“微接触印刷”中选择的软光刻技术。根据第一类型的结构，形成活性材料区域的步骤包括以相对于底部电极或顶部电极自对准的方式形成活性材料条带; 根据不同类型的结构，形成活性材料区域的步骤设想在底部电极和顶部电极之间形成单层或多层焊盘。

3. 发明申请

US20100127250A1 METHOD FOR REALIZING A THIN FILM ORGANIC ELECTRONIC DEVICE AND CORRESPONDING DEVICE 有权
标题翻译：实现薄膜有机电子器件和相关器件的方法
公开(公告)号：US20100127250A1
公开(公告)日：2010-05-27
申请号：US12625202
申请日：2009-11-24
申请人： Giovanna Salzillo , Maria Grazia Maglione , Anna Morra , Luigi Occhipinti
发明人： Giovanna Salzillo , Maria Grazia Maglione , Anna Morra , Luigi Occhipinti
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0023 , H01L51/0035 , H01L51/0541 , H01L2251/105
摘要： A method realizes a thin film organic electronic device integrated on a substrate and includes an organic material layer and an organic thin film transistor or OTFT transistor. The method comprises: depositing the organic material layer on the substrate, the organic material layer being a conductive organic polymer; patterning by a soft-lithographic procedure the organic material layer to create a reduced portion in order to make a channel area of the OTFT transistor; masking the organic material layer by covering with a cover mask a source area and a drain area of the OTFT transistor; irradiating by ultraviolet radiation to deactivate exposed portions of the organic material layer defining the source area, the drain area and the channel area; depositing on the organic material layer a semiconductor layer; and creating on the semiconductor layer a gate area of the OTFT transistor.
摘要翻译：一种实现集成在基板上的薄膜有机电子器件，包括有机材料层和有机薄膜晶体管或OTFT晶体管。该方法包括：将有机材料层沉积在基底上，有机材料层为导电有机聚合物; 通过软光刻工艺图案化有机材料层以形成减小的部分，以便形成OTFT晶体管的沟道面积; 通过用覆盖掩模覆盖OTFT晶体管的源极区域和漏极区域来掩蔽有机材料层; 通过紫外线照射来去激活限定源极区域，漏极区域和沟道区域的有机材料层的暴露部分; 在有机材料层上沉积半导体层; 以及在所述半导体层上形成所述OTFT晶体管的栅极区域。

4. 发明授权

US07485492B2 Process for manufacturing a non-volatile memory structure via soft lithography 有权
标题翻译：通过软光刻制造非易失性存储器结构的方法
公开(公告)号：US07485492B2
公开(公告)日：2009-02-03
申请号：US11697990
申请日：2007-04-09
申请人： Raffaele Vecchione , Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Raffaele Vecchione , Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G11C2213/77 , H01L51/0022 , H01L2251/105
摘要： A process for manufacturing a non-volatile memory structure, in particular of a cross-point type provided with an array of memory cells, including forming bottom electrodes on a substrate; forming areas of active material on the bottom electrodes; and forming top electrodes on the areas of active material. The memory cells are defined at the intersection of the bottom electrode with the top electrode. At least one from among the steps of forming bottom electrodes, forming areas of active material, and forming top electrodes includes using soft-lithography techniques, chosen from amongst “microtransfer molding”, “micromolding in capillary”, and “microcontact printing”. According to a first type of structure, the step of forming areas of active material includes forming strips of active material in a way self-aligned with respect to the bottom electrodes or the top electrodes; according to a different type of structure, the step of forming areas of active material envisages forming monolayer or multilayer pads between the bottom electrodes and the top electrodes.
摘要翻译：一种用于制造非易失性存储器结构的方法，特别是具有存储单元阵列的交叉点型，包括在衬底上形成底部电极; 在底部电极上形成活性材料区域; 并在活性材料的区域上形成顶部电极。存储单元被限定在底部电极与顶部电极的交叉处。从形成底部电极，形成活性材料的区域和形成顶部电极的步骤中的至少一个包括使用从“微转移成型”，“毛细管中的微成型”和“微接触印刷”中选择的软光刻技术。根据第一类型的结构，形成活性材料区域的步骤包括以相对于底部电极或顶部电极自对准的方式形成活性材料条带; 根据不同类型的结构，形成活性材料区域的步骤设想在底部电极和顶部电极之间形成单层或多层焊盘。

5. 发明申请

US20070105268A1 ORGANIC THIN FILM TRANSISTOR AND PROCESS FOR MANUFACTURING SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20070105268A1
公开(公告)日：2007-05-10
申请号：US11538390
申请日：2006-10-03
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： A process for manufacturing an organic thin film transistor includes the steps of arranging a shaping element having a first profile defining a slot, forming a mold suitable to define a cavity with the shaping element, depositing source and drain layers, an active material layer and a dielectric layer within the cavity, depositing a gate layer in the slot of the shaping element, and transferring the gate layer in contact with the dielectric layer by means of the shaping element
摘要翻译：制造有机薄膜晶体管的方法包括以下步骤：布置具有限定狭缝的第一轮廓的成形元件，形成适于与成形元件限定空腔的模具，沉积源极和漏极层，活性材料层和在腔内的介电层，在成形元件的槽中沉积栅极层，并通过成形元件转移与电介质层接触的栅极层

6. 发明授权

US08143091B2 Method for realizing a thin film organic electronic device and corresponding device 有权
标题翻译：实现薄膜有机电子器件及其相应器件的方法
公开(公告)号：US08143091B2
公开(公告)日：2012-03-27
申请号：US12625202
申请日：2009-11-24
申请人： Giovanna Salzillo , Maria Grazia Maglione , Anna Morra , Luigi Occhipinti
发明人： Giovanna Salzillo , Maria Grazia Maglione , Anna Morra , Luigi Occhipinti
IPC分类号： H01L51/40
CPC分类号： H01L51/0023 , H01L51/0035 , H01L51/0541 , H01L2251/105
摘要： A method realizes a thin film organic electronic device integrated on a substrate and includes an organic material layer and an organic thin film transistor or OTFT transistor. The method comprises: depositing the organic material layer on the substrate, the organic material layer being a conductive organic polymer; patterning by a soft-lithographic procedure the organic material layer to create a reduced portion in order to make a channel area of the OTFT transistor; masking the organic material layer by covering with a cover mask a source area and a drain area of the OTFT transistor; irradiating by ultraviolet radiation to deactivate exposed portions of the organic material layer defining the source area, the drain area and the channel area; depositing on the organic material layer a semiconductor layer; and creating on the semiconductor layer a gate area of the OTFT transistor.
摘要翻译：一种实现集成在基板上的薄膜有机电子器件，包括有机材料层和有机薄膜晶体管或OTFT晶体管。该方法包括：将有机材料层沉积在基底上，有机材料层为导电有机聚合物; 通过软光刻工艺图案化有机材料层以形成减小的部分，以便形成OTFT晶体管的沟道面积; 通过用覆盖掩模覆盖OTFT晶体管的源极区域和漏极区域来掩蔽有机材料层; 通过紫外线照射来去激活限定源极区域，漏极区域和沟道区域的有机材料层的暴露部分; 在有机材料层上沉积半导体层; 以及在所述半导体层上形成所述OTFT晶体管的栅极区域。

7. 发明授权

US07598116B2 Organic thin film transistor and process for manufacturing same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07598116B2
公开(公告)日：2009-10-06
申请号：US11538390
申请日：2006-10-03
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： A process for manufacturing an organic thin film transistor includes the steps of arranging a shaping element having a first profile defining a slot, forming a mold suitable to define a cavity with the shaping element, depositing source and drain layers, an active material layer and a dielectric layer within the cavity, depositing a gate layer in the slot of the shaping element, and transferring the gate layer in contact with the dielectric layer by means of the shaping element.
摘要翻译：制造有机薄膜晶体管的方法包括以下步骤：布置具有限定狭缝的第一轮廓的成形元件，形成适于与成形元件限定空腔的模具，沉积源极和漏极层，活性材料层和介电层，在成形元件的槽中沉积栅极层，并通过成形元件将栅极层与介电层接触。

8. 发明申请

US20090236593A1 ORGANIC THIN FILM TRANSISTOR AND PROCESS FOR MANUFACTURING SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20090236593A1
公开(公告)日：2009-09-24
申请号：US12478475
申请日：2009-06-04
申请人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
发明人： Roberta Cuozzo , Anna Morra , Teresa Napolitano
IPC分类号： H01L51/30
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0021 , H01L51/0023 , H01L51/0036 , H01L51/0037
摘要： An organic thin film transistor includes a dielectric layer and an active layer overlapping the dielectric layer, a source contact and a drain contact arranged on a surface of the active layer opposite the dielectric layer and mutually separated by an intermediate region, the source contact and drain contact having first and second inner walls, respectively, facing the intermediate region, and a gate contact arranged on a portion of another surface of the dielectric layer opposite the active layer and having first and second side walls aligned with the first and second inner walls, respectively.
摘要翻译：有机薄膜晶体管包括电介质层和与电介质层重叠的有源层，源极接触和漏极接触，布置在与电介质层相对的有源层的表面上并由中间区相互分离，源极接触和漏极接触件具有分别面对中间区域的第一和第二内壁以及布置在电介质层的与有源层相对的另一表面的一部分上并且具有与第一和第二内壁对准的第一和第二侧壁的栅极接触，分别。

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