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    • 7. 发明申请
    • PROCESS FOR MANUFACTURING A NON-VOLATILE MEMORY STRUCTURE VIA SOFT LITHOGRAPHY
    • 通过软绘图制造非易失性存储器结构的过程
    • US20070243679A1
    • 2007-10-18
    • US11697990
    • 2007-04-09
    • Raffaele VecchioneRoberta CuozzoAnna MorraTeresa Napolitano
    • Raffaele VecchioneRoberta CuozzoAnna MorraTeresa Napolitano
    • H01L21/8242
    • G03F7/0002B82Y10/00B82Y40/00G11C2213/77H01L51/0022H01L2251/105
    • A process for manufacturing a non-volatile memory structure, in particular of a cross-point type provided with an array of memory cells, including forming bottom electrodes on a substrate; forming areas of active material on the bottom electrodes; and forming top electrodes on the areas of active material. The memory cells are defined at the intersection of the bottom electrode with the top electrode. At least one from among the steps of forming bottom electrodes, forming areas of active material, and forming top electrodes includes using soft-lithography techniques, chosen from amongst “microtransfer molding”, “micromolding in capillary”, and “microcontact printing”. According to a first type of structure, the step of forming areas of active material includes forming strips of active material in a way self-aligned with respect to the bottom electrodes or the top electrodes; according to a different type of structure, the step of forming areas of active material envisages forming monolayer or multilayer pads between the bottom electrodes and the top electrodes.
    • 一种用于制造非易失性存储器结构的方法,特别是具有存储单元阵列的交叉点型,包括在衬底上形成底部电极; 在底部电极上形成活性材料区域; 并在活性材料的区域上形成顶部电极。 存储单元被限定在底部电极与顶部电极的交叉处。 从形成底部电极,形成活性材料的区域和形成顶部电极的步骤中的至少一个包括使用从“微转移成型”,“毛细管中的微成型”和“微接触印刷”中选择的软光刻技术。 根据第一类型的结构,形成活性材料区域的步骤包括以相对于底部电极或顶部电极自对准的方式形成活性材料条带; 根据不同类型的结构,形成活性材料区域的步骤设想在底部电极和顶部电极之间形成单层或多层焊盘。