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1. 发明授权

US5317330A Dual resonant antenna circuit for RF tags 失效
标题翻译：用于RF标签的双谐振天线电路
公开(公告)号：US5317330A
公开(公告)日：1994-05-31
申请号：US957119
申请日：1992-10-07
申请人： David F. Everett , Daniel C. Buck
发明人： David F. Everett , Daniel C. Buck
IPC分类号： H04B5/02 , G01S13/75 , G06K17/00 , G06K19/07 , H01Q21/00 , G08B13/24
CPC分类号： G01S13/753 , G01S13/758 , G06K19/0723
摘要： A two-way communication system is provided having a stationary device and a portable passive device. The portable passive device has circuitry for storing and transmitting coded information. The stationary member transmits a signal at a first frequency via magnetic field and the portable passive device transmits coded information stored on circuitry provided therein at a second frequency also via a magnetic field. An antenna circuit is provided in the portable passive device having a parallel resonant circuit and a series resonant circuit. The parallel resonant circuit derives operating power from the signal at a first frequency for use in the circuitry provided in the portable passive device. The series resonant circuit transmits coded information at a second frequency.
摘要翻译：提供了具有固定装置和便携式无源装置的双向通信系统。便携式无源设备具有用于存储和发送编码信息的电路。固定构件通过磁场发送第一频率的信号，并且便携式无源装置也通过磁场以第二频率发送存储在其中提供的电路上的编码信息。在具有并联谐振电路和串联谐振电路的便携式无源器件中设置有天线电路。并联谐振电路从在第一频率的信号中导出工作功率，用于在便携式无源器件中提供的电路中使用。串联谐振电路以第二频率发送编码信息。

2. 发明授权

US5252842A Low-loss semiconductor device and backside etching method for manufacturing same 失效
标题翻译：低损耗半导体器件及其制造的背面蚀刻方法
公开(公告)号：US5252842A
公开(公告)日：1993-10-12
申请号：US736670
申请日：1991-07-26
申请人： Daniel C. Buck , James E. Degenford , Soong H. Lee , Scott A. Imhoff , Dale E. Dawson
发明人： Daniel C. Buck , James E. Degenford , Soong H. Lee , Scott A. Imhoff , Dale E. Dawson
IPC分类号： H01L21/338 , H01L29/417 , H01L29/812 , H01L29/80 , H01L29/06 , H01L29/205 , H01L29/64
CPC分类号： H01L29/66863 , H01L29/41733 , H01L29/8124 , H01L29/8126
摘要： A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. In the exemplary embodiment, a GaAs FET chip is formed by a process including the step of etching the GaAs substrate from the back of the chip in a defined removal region to reduce the dielectric constant in the region of the source-to-drain path. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. To allow simplified etching patterns, the source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip. Optionally, this buffer layer may also be etched away in a further processing step. An insulating layer of material may be added to the back side of the chip in the etched region to increase structural strength, and a pressure relief ventilation path may be provided connecting the removal region to the outside at an edge or at the surface of the chip.
摘要翻译：半导体器件具有从衬底的背面去除的材料，并且提供制造这些器件的制造工艺。在示例性实施例中，通过包括在限定的去除区域中从芯片背面蚀刻GaAs衬底以降低源极 - 漏极路径区域中的介电常数的步骤的方法形成GaAs FET芯片。提供在有源层和衬底之间的不同材料的缓冲层防止在去除过程期间蚀刻活性层。为了允许简化的蚀刻图案，源到漏极路径可以以各种图案布置在芯片的表面上，包括将芯片的小表面区域中的大路径区域集中的“封装”图案。任选地，该缓冲层也可以在另外的处理步骤中被蚀刻掉。可以在蚀刻区域中的芯片的背面添加绝缘层材料，以增加结构强度，并且可以提供在芯片的边缘或表面处将去除区域连接到外部的减压通气路径。

3. 发明授权

US4951123A Integrated circuit chip assembly utilizing selective backside deposition 失效
标题翻译：利用选择性背面沉积的集成电路芯片组件
公开(公告)号：US4951123A
公开(公告)日：1990-08-21
申请号：US252234
申请日：1988-09-30
申请人： Soong H. Lee , Chun L. Lau , Daniel C. Buck , Dale E. Dawson
发明人： Soong H. Lee , Chun L. Lau , Daniel C. Buck , Dale E. Dawson
IPC分类号： H01L23/64 , H01L29/06
CPC分类号： H01L23/64 , H01L29/0657 , H01L2924/0002 , H01L2924/3011
摘要： The invention is an improved integrated circuit chip assembly which provides enhanced heat transfer from active electronic devices of the integrated circuit by significantly reducing the thickness of the substrate and providing the necessary structural support through a thermally conducting spacing segment between the substrate and a ground plane in the region of the active electronic devices. This improvement further permits added flexibility in the design of transmission lines by permitting adjustment of the distance between the transmission line and the ground plane and furthermore by permitting the introduction of a second dielectric material such that the impedance of the transmission line may be controlled.
摘要翻译：本发明是一种改进的集成电路芯片组件，其通过显着减小基板的厚度并通过基板和接地平面之间的导热间隔部分提供必要的结构支撑，从而提供从集成电路的有源电子器件增强的热传递有源电子设备的区域。这种改进进一步允许通过允许调节传输线和接地平面之间的距离并且还允许引入第二电介质材料从而可以控制传输线的阻抗来增加传输线设计的灵活性。

4. 发明申请

US20170217548A1 PERSONAL BIPEDAL WATERCRAFT 审中-公开
公开(公告)号：US20170217548A1
公开(公告)日：2017-08-03
申请号：US15418084
申请日：2017-01-27
申请人： Daniel C. Buck
发明人： Daniel C. Buck
IPC分类号： B63B35/83 , B63H16/08 , B63H1/32 , B63B35/81
CPC分类号： B63B35/83 , B63B35/812 , B63B2035/813 , B63H16/08
摘要： A personal bipedal watercraft includes a pair of skis. Each ski of the pair of skis includes a floating hull. A deck is secured to the hull. A binding on each deck is configured to receive a foot of a user. A plurality of paddle assemblies are moveably secured to an underside of the floating hull. The paddle assemblies each include a blade and a fin.

5. 发明授权

US5017895A Magnetostatic wave (MSW) filter with sharp upper cut-off frequency and channelizer formed therefrom 失效
标题翻译：具有尖锐上限截止频率的磁静电（MSW）滤波器和由此形成的通道器
公开(公告)号：US5017895A
公开(公告)日：1991-05-21
申请号：US405714
申请日：1989-09-11
申请人： Daniel C. Buck , Steven N. Stitzer
发明人： Daniel C. Buck , Steven N. Stitzer
IPC分类号： H03H2/00
CPC分类号： H03H2/001
摘要： In the present invention the upper edge of the frequency response of the magnetostatic wave (MSW) filter is sharpened. A band limiting element (BLE) is coupled to the MSW filter, preferably in the filter element output. In one embodiment the BLE absorbs signals above a certain frequency in the upper band edge of the MSW. In another embodiment, the BLE reinforces the output response.
摘要翻译：在本发明中，静磁波（MSW）滤波器的频率响应的上边缘被削尖。频带限制元件（BLE）耦合到MSW滤波器，优选地在滤波器元件输出端。在一个实施例中，BLE在MSW的上边缘边缘吸收高于特定频率的信号。在另一个实施例中，BLE加强了输出响应。

6. 发明授权

US5258591A Low inductance cantilever switch 失效
标题翻译：低电感悬臂开关
公开(公告)号：US5258591A
公开(公告)日：1993-11-02
申请号：US780690
申请日：1991-10-18
申请人： Daniel C. Buck
发明人： Daniel C. Buck
IPC分类号： H01H1/00 , H01H59/00 , H01H57/00
CPC分类号： H01H1/0036 , H01H59/0009
摘要： An apparatus is disclosed for providing an electrostatically actuated mechanical switch utilizing a cantilever beam element fabricated by solid-state microfabrication techniques. The apparatus reduces the required pull down voltage and lowers the switch inductance by separating the pull down electrode and contact pad. The pull down electrode is placed further away from the fulcrum of the cantilever beam then the contact pad to optimize the mechanical advantages which allow for a reduced pull down voltage. The contact pad is placed closer to the cantilever fulcrum to reduce the associated switch inductance. The gap between the contact pad and the cantilever beam is less then the gap between the pull down electrode and the cantilever beam to insure that the cantilever makes first contact with the contact pad.
摘要翻译：公开了一种用于提供使用通过固态微细加工技术制造的悬臂梁元件的静电致动的机械开关的装置。该装置通过分离下拉电极和接触垫来降低所需的下拉电压并降低开关电感。下拉电极被放置得更远离悬臂梁的支点然后是接触垫，以优化允许降低下拉电压的机械优点。接触垫放置得更靠近悬臂支点，以减少相关的开关电感。接触垫和悬臂梁之间的间隙小于下拉电极和悬臂梁之间的间隙，以确保悬臂与接触垫第一次接触。

7. 发明授权

US5164358A Superconducting filter with reduced electromagnetic leakage 失效
标题翻译：具有降低电磁泄漏的超导滤波器
公开(公告)号：US5164358A
公开(公告)日：1992-11-17
申请号：US600893
申请日：1990-10-22
申请人： Daniel C. Buck , Bruce R. McAvoy
发明人： Daniel C. Buck , Bruce R. McAvoy
IPC分类号： H01P1/203
CPC分类号： H01P1/20363 , Y10S505/70 , Y10S505/701
摘要： A stripline filter with suppressed electro-magnetic leakage. A filter topology suppresses generation of spurious waveguide modes by structuring microstrip launchers to operate as a waveguide way beyond cutoff of the waveguide modes, and by damping out remaining waveguide mode energy with lossy stripes in the filter package.
摘要翻译：具有抑制电磁泄漏的带状线滤波器。滤波器拓扑通过构造微带发射器来抑制寄生波导模式的产生，以作为波导方式超出波导模式的截止，并且通过滤波器封装中的有损条纹来消除剩余的波导模式能量。

8. 发明授权

US4207547A Reflection mode notch filter 失效
标题翻译：反射模式陷波滤波器
公开(公告)号：US4207547A
公开(公告)日：1980-06-10
申请号：US956705
申请日：1978-11-01
申请人： Daniel C. Buck
发明人： Daniel C. Buck
IPC分类号： H01P1/20 , H03H7/14
CPC分类号： H01P1/20
摘要： A two stage transmission notch filter characteristic is achieved with one stage of microwave circuitry. Elimination of the second stage is accomplished by reflecting the microwave power back through a single stage device. Structurally, the adjacent ports of two 3 dB directional couplers are directly connected by delay lines of unequal delay times. The opposite adjacent ports of one coupler comprise the device input and output while the opposite adjacent ports of the other coupler are terminated in a manner that reflects microwave power back through the device. A phase shifter is inserted into one delay line for tuning and a non-reciprocal phase element is used to prevent reflected signals from emerging from the input port.
摘要翻译：通过一级微波电路实现两级传输陷波滤波器特性。通过将微波功率反射回单级设备来实现第二级的消除。在结构上，两个3 dB定向耦合器的相邻端口通过不等延迟时间的延迟线直接连接。一个耦合器的相对的相邻端口包括设备输入和输出，而另一个耦合器的相对的相邻端口以反射微波功率的方式终止。一个移相器被插入一个延迟线进行调谐，并且使用不可逆相位元件来防止反射信号从输入端口出现。

9. 发明授权

US5032799A Multistage cascode radio frequency amplifier 失效
标题翻译：多级共源共栅射频放大器
公开(公告)号：US5032799A
公开(公告)日：1991-07-16
申请号：US618523
申请日：1990-11-26
申请人： Walter E. Milberger , Charles S. Kerfoot , Daniel C. Buck , Franklin B. Jones
发明人： Walter E. Milberger , Charles S. Kerfoot , Daniel C. Buck , Franklin B. Jones
IPC分类号： H03F1/22 , H03F3/193 , H03F3/42
CPC分类号： H03F3/426 , H03F1/226 , H03F3/1935
摘要： A cascode radio frequency amplifier in which a control amplifier stage is provided and any number of clone amplifier stages are connected in series (cascode) with the control amplifier. The cascode amplifiers provide equal voltage and power since each of the clone stages provides unity gain. The device can operate from low frequencies to high frequencies.
摘要翻译：提供控制放大器级并且与控制放大器串联（共源共栅）的任何数量的克隆放大器级的共源共RF射频放大器。共源共栅放大器提供相等的电压和功率，因为每个克隆级提供单位增益。该器件可以从低频到高频工作。

10. 发明授权

US4970386A Vertical FET high speed optical sensor 失效
标题翻译：垂直FET高速光学传感器
公开(公告)号：US4970386A
公开(公告)日：1990-11-13
申请号：US370352
申请日：1989-06-22
申请人： Daniel C. Buck
发明人： Daniel C. Buck
IPC分类号： G02B6/42 , H01L31/0352 , H01L31/112
CPC分类号： G02B6/4249 , G02B6/4295 , H01L31/035281 , H01L31/1123 , Y02E10/50
摘要： A high speed optical sensor comprising a parallel array of vertical field effect transistors and optical fibers disposed in the recesses between the transistors is disclosed herein. Each of the vertical field effect transistors includes a substrate of doped gallium arsenide divided by a depleted region. One side of each of the gallium arsenide substrates is flanked by an optical fiber which transmits an optical signal into one side of the depleted region, while the other side of the substrate includes a gate electrode for controlling the flow of photo charges induced in the depleted region by the light signals. The gate electrode serves not only to control the flow of charges through the transistor but also reflects back a portion of the light emanated by the optical fiber so that it passes a second time through the depleted region. The efficient light coupling that occurs between the optical fibers and the depleted regions of the substrates of the vertical FET's, in combination with the low capacitive leakage afforded by the design at high frequencies and the high power density obtainable with vertical FET's results in a photosensor which is advantageously efficient, fast the compact.
摘要翻译：本文公开了一种包括垂直场效应晶体管的平行阵列和设置在晶体管之间的凹槽中的光纤的高速光学传感器。每个垂直场效应晶体管包括掺杂的砷化镓的衬底除以耗尽区。每个砷化镓衬底的一侧侧面是将光信号传输到耗尽区的一侧的光纤，而衬底的另一侧包括用于控制在耗尽区中引起的光电荷的流动的栅电极区域由光信号。栅电极不仅用于控制通过晶体管的电荷的流动，而且还反射由光纤发出的光的一部分，使得其经过耗尽区第二次。在垂直FET的基板的光纤与耗尽区之间发生的有效的光耦合结合由高频率设计的低电容性泄漏以及利用垂直FET可获得的高功率密度导致光电传感器有利于高效，快速的紧凑。

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