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    • 4. 发明授权
    • Controlled fabrication of gaps in electrically conducting structures
    • 控制导电结构间隙的制造
    • US07582490B2
    • 2009-09-01
    • US10767102
    • 2004-01-29
    • Jene A. GolovchenkoGregor M. SchürmannGavin M. KingDaniel Branton
    • Jene A. GolovchenkoGregor M. SchürmannGavin M. KingDaniel Branton
    • H01L21/00C23C14/00G01N35/08G01N35/00H01L29/78
    • G01N33/48721Y10T436/11Y10T436/12
    • A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.
    • 一种用于控制具有间隙的导电固态结构中的间隙的方法。 该结构暴露于制造工艺环境条件,其条件被选择以改变间隙的程度。 在将结构暴露于工艺环境中时,跨越间隙施加电压偏置。 在工艺环境暴露期间测量跨越间隙的电子隧道电流,并且基于隧道电流测量在工艺环境暴露期间控制工艺环境。 一种用于控制设置在支撑结构上的导电电极之间的间隙的方法。 每个电极具有通过间隙与其它电极尖端分离的电极头。 电极暴露于离子通量,导致电极的材料传输到相应的电极尖端,将电极的材料局部地添加到间隙中的电极尖端。
    • 6. 发明申请
    • Nanometric Material Having a Nanopore Enabling High-Sensitivity Molecular Detection and Analysis
    • 具有纳米孔的纳米材料实现高灵敏度分子检测和分析
    • US20120234679A1
    • 2012-09-20
    • US13419383
    • 2012-03-13
    • Slaven GarajJene A. GolovchenkoDaniel Branton
    • Slaven GarajJene A. GolovchenkoDaniel Branton
    • G01N27/447G01N27/453B82Y5/00B82Y30/00B82Y99/00
    • There is provided a substantially bare, self-supported single-layer graphene membrane including a nanopore extending through a thickness of the graphene membrane from a first to a second membrane surface opposite the first graphene membrane surface. A connection from the first graphene membrane surface to a first reservoir provides, at the first graphene membrane surface, a species in an ionic solution to the nanopore, and a connection from the second graphene membrane surface to a second reservoir is provided to collect the species and ionic solution after translocation of the species and ionic solution through the nanopore from the first graphene membrane surface to the second graphene membrane surface. An electrical circuit is connected on opposite sides of the nanopore to measure flow of ionic current through the nanopore in the graphene membrane.
    • 提供了基本上裸露的自支撑单层石墨烯膜,其包括从第一至第二膜表面延伸穿过石墨烯膜的厚度的纳米孔,所述第一膜表面与第一石墨烯膜表面相对。 从第一石墨烯膜表面到第一储存器的连接在第一石墨烯膜表面处提供离子溶液中的物质到纳米孔,并且提供从第二石墨烯膜表面到第二储存器的连接以收集物种 和离子溶液在物种和离子溶液通过纳米孔从第一石墨烯膜表面转移到第二石墨烯膜表面之后。 电路连接在纳米孔的相对侧,以测量通过石墨烯膜中的纳米孔的离子电流的流动。
    • 9. 发明授权
    • Control of solid state dimensional features
    • 控制固态尺寸特征
    • US06783643B2
    • 2004-08-31
    • US10186105
    • 2002-06-27
    • Jene A. GolovchenkoDaniel BrantonMichael J. AzizJiali LiDerek M. SteinCiaran J. McMullan
    • Jene A. GolovchenkoDaniel BrantonMichael J. AzizJiali LiDerek M. SteinCiaran J. McMullan
    • C23C1434
    • B81C1/00626B81C2201/0143G01N33/48721H01L22/26H01L2924/0002H01L2924/00
    • A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂ ∂ t ⁢ C ⁡ ( r , t ) = F ⁢   ⁢ Y 1 + D ⁢ ∇ 2 ⁢ C - C τ trap - F ⁢   ⁢ C ⁢   ⁢ σ C , where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, T1 is number of adatoms created per incident ion, D is adatom diffusivity, &tgr;trap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of structure material, and &sgr;C is cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, structure material to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding structure material to the feature location.
    • 具有表面的固体结构被提供并暴露于入射离子的通量F,条件是基于以下条件选择:其中C是结构表面处的移动吸附原子的浓度,r是向量表面位置,t是时间,T1 是每个入射离子产生的吸附原子数,D是吸附原子扩散系数,tautrap是在结构材料的结构表面缺陷特征下发生吸附原子湮灭之前的吸收原子的平均寿命,σC是被选择的入射离子特征的吸附原子湮灭的横截面 离子暴露条件。 离子曝光条件选择控制通过入射离子对结构表面的溅射,以在包括结构表面的结构内将结构材料转移到特征位置,以响应于离子通量暴露而产生基本上通过局部添加结构材料的特征 功能位置。