会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • On chip slow-wave structure, method of manufacture and design structure
    • 片上慢波结构,制造方法和设计结构
    • US08130059B2
    • 2012-03-06
    • US12423835
    • 2009-04-15
    • Guoan WangWayne H. Woods, Jr.
    • Guoan WangWayne H. Woods, Jr.
    • H01P1/18
    • H01P9/00
    • An on-chip slow-wave structure that uses multiple parallel signal paths with grounded capacitance structures, method of manufacturing and design structure thereof is provided. The slow wave structure includes a plurality of conductor signal paths arranged in a substantial parallel arrangement. The structure further includes a first grounded capacitance line or lines positioned below the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A second grounded capacitance line or lines is positioned above the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A grounded plane grounds the first and second grounded capacitance line or lines.
    • 提供了采用具有接地电容结构的多个并行信号路径的片上慢波结构,其制造方法和设计结构。 慢波结构包括以大致平行布置布置的多个导体信号路径。 该结构还包括位于多个导体信号路径下方并且基本上正交于多个导体信号路径布置的第一接地电容线或线。 第二接地电容线或线路位于多个导体信号路径上方并且基本上正交于多个导体信号路径布置。 接地平面接地第一和第二接地电容线或线路。