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1. 发明授权

US5882165A Multiple chamber integrated process system 失效
标题翻译：多室综合处理系统
公开(公告)号：US5882165A
公开(公告)日：1999-03-16
申请号：US926568
申请日：1997-09-10
申请人： Dan Maydan , Sasson Somekh , David Nin-Kou Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
发明人： Dan Maydan , Sasson Somekh , David Nin-Kou Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
IPC分类号： H01L21/00 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67161 , H01L21/67184 , H01L21/67201 , H01L21/67742 , H01L21/67745 , H01L21/67748
摘要： An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R--.THETA. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.
摘要翻译：公开了一种集成的模块化多室真空处理系统。该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。机器人被安装在装载锁中，并利用同轴的驱动系统，该系统通过双重四杆连杆机构连接到末端执行器，用于将选定的R-THETA运动传递给叶片，以在外部升降机，内部升降机和各个处理室。该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

2. 发明授权

US4951601A Multi-chamber integrated process system 失效
标题翻译：多室综合处理系统
公开(公告)号：US4951601A
公开(公告)日：1990-08-28
申请号：US371700
申请日：1989-06-23
申请人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
发明人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/67742 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.
摘要翻译：公开了一种集成的模块化多室真空处理系统。该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。机器人安装在装载锁中，并且利用同轴驱动系统，该系统通过双四杆连杆机构连接到末端执行器，用于将选定的Rθ运动传递给叶片，以在外部升降机，内部升降机和各个处理室。该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

3. 发明授权

US5292393A Multichamber integrated process system 失效
标题翻译：多室综合过程系统
公开(公告)号：US5292393A
公开(公告)日：1994-03-08
申请号：US808786
申请日：1991-12-16
申请人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
发明人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
IPC分类号： H01L21/00 , C23C16/00 , B65G1/06
CPC分类号： H01L21/67167 , H01L21/67201
摘要： An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.
摘要翻译：公开了一种集成的模块化多室真空处理系统。该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。机器人被安装在装载锁中，并且利用通过双重四杆连杆机构连接到端部执行器的同心轴驱动系统，用于将选定的R（θ）运动传递到叶片以在外部升降机上加载和卸载晶片，内部电梯和各个处理室。该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

4. 发明授权

US4668338A Magnetron-enhanced plasma etching process 失效
标题翻译：磁控增强等离子体蚀刻工艺
公开(公告)号：US4668338A
公开(公告)日：1987-05-26
申请号：US814638
申请日：1985-12-30
申请人： Dan Maydan , Sasson Somekh , Mei Cheng , David Cheng
发明人： Dan Maydan , Sasson Somekh , Mei Cheng , David Cheng
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32623 , H01J37/3266 , H01L21/31116 , H01L21/32137 , H01J2237/3341
摘要： A magnetically-enhanced, variable magnetic field, RIE mode plasma etch process for etching materials such as dielectrics and polycrystalline, is disclosed. The variable magnetic field permits optimization of selected characteristics such as etch rate, etch selectivity, ion bombardment and radiation damage, etch uniformity, and etch anisotropy.
摘要翻译：公开了用于蚀刻诸如电介质和多晶的材料的磁增强型可变磁场RIE模式等离子体蚀刻工艺。可变磁场允许优化所选择的特性，例如蚀刻速率，蚀刻选择性，离子轰击和辐射损伤，蚀刻均匀性和蚀刻各向异性。

5. 发明授权

US5215619A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US5215619A
公开(公告)日：1993-06-01
申请号：US760848
申请日：1991-09-17
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

6. 发明授权

US4842683A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US4842683A
公开(公告)日：1989-06-27
申请号：US185215
申请日：1988-04-25
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

7. 发明授权

US5280983A Semiconductor processing system with robotic autoloader and load lock 失效
标题翻译：带有机器人自动装载机和加载锁的半导体处理系统
公开(公告)号：US5280983A
公开(公告)日：1994-01-25
申请号：US963006
申请日：1992-10-19
申请人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
发明人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
IPC分类号： H01L21/67 , H02H9/00 , H05K13/02 , B66C1/42
CPC分类号： H05K13/021 , H01L21/67 , H02H9/005 , Y10S294/902
摘要： A wafer processing system includes an autoloader mounted within a load lock for providing batch, cassette-to-cassette automatic wafer transfer between the semiconductor processing chamber and cassette load and unload positions within the load lock. The system provides rapid, contamination-free loading and unloading of semiconductor wafers.
摘要翻译：晶片处理系统包括安装在负载锁中的自动装载机，用于在半导体处理室和装载锁之间的卸载位置之间提供批处理，盒到盒自动晶片传送。该系统提供快速，无污染的半导体晶片装载和卸载。

8. 发明授权

US5224809A Semiconductor processing system with robotic autoloader and load lock 失效
标题翻译：带有机器人自动装载机和加载锁的半导体处理系统
公开(公告)号：US5224809A
公开(公告)日：1993-07-06
申请号：US816525
申请日：1991-12-30
申请人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
发明人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
IPC分类号： B65G49/07 , H01L21/67 , H05K13/02
CPC分类号： H01L21/67 , H05K13/021 , Y10S414/13
摘要： A wafer processing system includes an autoloader mounted within a load lock for providing batch, cassette-to-cassette automatic wafer transfer between the semiconductor processing chamber and cassette load and unload positions within the load lock. The system provides rapid, contamination-free loading and unloading of semiconductor wafers.
摘要翻译：晶片处理系统包括安装在负载锁中的自动装载机，用于在半导体处理室和装载锁之间的卸载位置之间提供批处理，盒到盒自动晶片传送。该系统提供快速，无污染的半导体晶片装载和卸载。

9. 发明授权

US4911597A Semiconductor processing system with robotic autoloader and load lock 失效
标题翻译：带有机器人自动装载机和加载锁的半导体处理系统
公开(公告)号：US4911597A
公开(公告)日：1990-03-27
申请号：US89926
申请日：1987-08-25
申请人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
发明人： Dan Maydan , Sasson R. Somekh , Charles Ryan-Harris , Richard A. Seilheimer , David Cheng , Edward M. Abolnikov , Lance S. Reinke , J. Christopher Moran , Richard M. Catlin, Jr. , Robert B. Lowrance , Gregory W. Ridgeway
IPC分类号： H01L21/677 , B65G49/07 , H01L21/67 , H01L21/683 , H05K13/02
CPC分类号： H05K13/021 , H01L21/67 , Y10S414/13 , Y10S414/135 , Y10S414/137 , Y10S414/139 , Y10S414/14 , Y10S414/141
摘要： A wafer processing system includes an autoloader mounted within a load lock for providing batch, cassette-to-cassette automatic wafer transfer between the semiconductor processing chamber and cassette load and unload positions within the load lock. The system provides rapid, contamination-free loading and unloading of semiconductor wafers.
摘要翻译：晶片处理系统包括安装在负载锁中的自动装载机，用于在半导体处理室和装载锁之间的卸载位置之间提供批处理，盒到盒自动晶片传送。该系统提供快速，无污染的半导体晶片装载和卸载。

10. 外观设计

USD599707S1 Vehicle exterior 有权
公开(公告)号：USD599707S1
公开(公告)日：2009-09-08
申请号：US29327927
申请日：2008-11-14
申请人： David Cheng , Jason Matthew Wilbur
设计人： David Cheng , Jason Matthew Wilbur

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