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1. 发明授权

US09633868B2 Heat treatment method and heat treatment apparatus 有权
公开(公告)号：US09633868B2
公开(公告)日：2017-04-25
申请号：US14361000
申请日：2012-10-18
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Kenichi Yokouchi
IPC分类号： A21B2/00 , F26B19/00 , F26B3/30 , F21V7/00 , G02B17/00 , H01L21/324 , H01L21/265 , H01L21/67 , H01L21/687 , H01L21/66 , H05B3/00 , H01L29/78
CPC分类号： H01L21/324 , H01L21/265 , H01L21/67115 , H01L21/6875 , H01L22/14 , H01L29/7833 , H05B3/0047
摘要： After a substrate implanted with impurities is heated to a preheating temperature, the front surface of the substrate is heated to a target temperature by irradiating the front surface of the substrate with a flash of light. Further, the flash irradiation is continued to maintain the temperature of the front surface near the target temperature for a predetermined time period. At this time, a flash irradiation time period in the flash heating step is made longer than a heat conduction time period required for heat conduction from the front surface of the substrate to the back surface thereof, and a difference in temperature between the front and back surfaces of the substrate is controlled to be always not more than one-half of an increased temperature from the preheating temperature to the target temperature during the flash irradiation. This alleviates the concentration of stresses resulting from a difference in thermal expansion between the front and back surfaces of the substrate to thereby prevent the cracking of the substrate.

2. 发明授权

US08987123B2 Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flash of light 有权
标题翻译：热处理装置和通过用闪光照射基板来加热基板的热处理方法
公开(公告)号：US08987123B2
公开(公告)日：2015-03-24
申请号：US13790313
申请日：2013-03-08
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Takahiro Yamada , Kenichi Yokouchi
IPC分类号： H01L21/223 , H01L21/67
CPC分类号： H01L21/223 , H01L21/67115
摘要： After the completion of the transport of a semiconductor wafer into a chamber, the flow rate of nitrogen gas supplied into the chamber is decreased. In this state, a preheating treatment and flash irradiation are performed. The flow rate of nitrogen gas supplied into the chamber is increased when the temperature of the front surface of the semiconductor wafer is decreased to become equal to the temperature of the back surface thereof after reaching its maximum temperature by the irradiation of the substrate with a flash of light. Thereafter, the supply flow rate of nitrogen gas is maintained at a constant value until the semiconductor wafer is transported out of the chamber. This achieves the reduction in particles deposited on the semiconductor wafer while suppressing adverse effects resulting from the nonuniform in-plane temperature distribution of the semiconductor wafer.
摘要翻译：在将半导体晶片输送到室中完成之后，供应到室中的氮气的流量减小。在这种状态下，进行预热处理和闪光照射。当半导体晶片的前表面的温度通过用闪光灯照射基板达到其最大温度后，其后表面的温度降低时，供应到室中的氮气的流量增加的光。此后，将氮气的供给流量保持为恒定值，直到将半导体晶片输送到室外。由此，能够抑制由于半导体晶片的面内温度分布不均匀而导致的沉积在半导体晶片上的微粒的减少。

3. 发明申请

US20140329340A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS 有权
标题翻译：热处理方法和热处理装置
公开(公告)号：US20140329340A1
公开(公告)日：2014-11-06
申请号：US14361000
申请日：2012-10-18
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Kenichi Yokouchi
IPC分类号： H01L21/324 , H01L21/66 , H01L21/67 , H05B3/00
CPC分类号： H01L21/324 , H01L21/265 , H01L21/67115 , H01L21/6875 , H01L22/14 , H01L29/7833 , H05B3/0047
摘要： After a substrate implanted with impurities is heated to a preheating temperature, the front surface of the substrate is heated to a target temperature by irradiating the front surface of the substrate with a flash of light. Further, the flash irradiation is continued to maintain the temperature of the front surface near the target temperature for a predetermined time period. At this time, a flash irradiation time period in the flash heating step is made longer than a heat conduction time period required for heat conduction from the front surface of the substrate to the back surface thereof, and a difference in temperature between the front and back surfaces of the substrate is controlled to be always not more than one-half of an increased temperature from the preheating temperature to the target temperature during the flash irradiation. This alleviates the concentration of stresses resulting from a difference in thermal expansion between the front and back surfaces of the substrate to thereby prevent the cracking of the substrate.
摘要翻译：将植入了杂质的基板加热到预热温度后，通过用闪光照射基板的前表面将基板的前表面加热到目标温度。此外，继续进行闪光照射，将前表面的温度保持在目标温度附近一段预定的时间。此时，闪光加热步骤中的闪光照射时间段比从基板的前表面到其后表面的热传导所需的热传导时间长，以及前后的温度差控制基板的表面总是不超过在闪光照射期间从预热温度升高到目标温度的升高温度的一半。这减轻了由于基板的前表面和后表面之间的热膨胀差导致的应力集中，从而防止了基板的开裂。

4. 发明授权

US09449825B2 Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method 有权
标题翻译：通过照射闪光加热基板的热处理装置和热处理方法
公开(公告)号：US09449825B2
公开(公告)日：2016-09-20
申请号：US13752420
申请日：2013-01-29
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Kenichi Yokouchi
IPC分类号： F27B5/14 , F27B5/18 , F27D11/12 , H01L21/26 , F27B17/00 , F27D5/00 , H01L21/683
CPC分类号： H01L21/26 , F27B5/14 , F27B5/18 , F27B17/0016 , F27B17/0025 , F27D5/0037 , F27D11/12 , H01L21/6838
摘要： A first flash heating is performed in which a lower flash lamp irradiates a back surface of a semiconductor wafer with flashes of light, so that heat conduction from the back surface to a surface of the semiconductor wafer raises the temperature of the surface from the room temperature to an intermediate temperature. Then, a second flash heating is performed in which an upper flash lamp irradiates the surface of the semiconductor wafer with flashes of light, to raise the temperature of the surface of the semiconductor wafer from the intermediate temperature to a target temperature. Since only the irradiation with flashes of light emitted from the lower flash lamp and the upper flash lamp is used to cause the semiconductor wafer having the room temperature to reach the target temperature, all heat treatments can be completed in an extremely short time of one second or less.
摘要翻译：进行第一次闪光加热，其中下部闪光灯以闪烁的光照射半导体晶片的背面，使得从背面到半导体晶片的表面的热传导使表面的温度从室温升高达到中间温度。然后，进行第二次闪光加热，其中上部闪光灯以闪烁的光照射半导体晶片的表面，以将半导体晶片的表面的温度从中间温度升高到目标温度。由于仅使用从下部闪光灯和上部闪光灯发射的闪光的照射使得室温的半导体晶片达到目标温度，所以所有的热处理可以在极短的时间内完成一秒钟或更少。

5. 发明申请

US20130043229A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION 有权
公开(公告)号：US20130043229A1
公开(公告)日：2013-02-21
申请号：US13657265
申请日：2012-10-22
申请人： Dainippon Screen Mfg. Co. Ltd.
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： H05B1/00
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

6. 发明授权

US09831108B2 Thermal processing apparatus and thermal processing method for heating substrate by light irradiation 有权
公开(公告)号：US09831108B2
公开(公告)日：2017-11-28
申请号：US14081013
申请日：2013-11-15
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Kenichi Yokouchi , Nobuhiko Nishide
IPC分类号： H01L21/67
CPC分类号： H01L21/67115
摘要： A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer.

7. 发明授权

US09330949B2 Heat treatment apparatus for heating substrate by irradiating substrate with flash of light 有权
标题翻译：用于通过用闪光照射基板来加热基板的热处理装置
公开(公告)号：US09330949B2
公开(公告)日：2016-05-03
申请号：US13792419
申请日：2013-03-11
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Kenichi Yokouchi , Hideo Nishihara
IPC分类号： F26B19/00 , A21B2/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67115 , H01L21/6875 , H01L21/68785
摘要： Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the three support members, a heating treatment is performed by irradiating the semiconductor wafer with halogen light from halogen lamps. Silicon carbide absorbs the halogen light better than quartz. The support members support the outer peripheral edge of the semiconductor wafer in point contacting relationship, so that the contact between a holder and the semiconductor wafer is minimized. This minimizes the disorder of the temperature distribution of the semiconductor wafer due to the support members to achieve the uniform heating of the semiconductor wafer.
摘要翻译：由碳化硅制成的三个支撑构件固定地设置在支撑环的内周上。支撑构件相对于水平面倾斜15至30度的范围内。通过由三个支撑构件支撑的半导体晶片的外周边缘，通过用卤素灯对卤素灯照射半导体晶片进行加热处理。碳化硅比石英吸收卤素灯更好。支撑构件以点接触关系支撑半导体晶片的外周边缘，使得保持器和半导体晶片之间的接触最小化。这使由于支撑构件导致的半导体晶片的温度分布的紊乱最小化，以实现半导体晶片的均匀加热。

8. 发明授权

US08861944B2 Heat treatment apparatus and method for heating substrate by light irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08861944B2
公开(公告)日：2014-10-14
申请号：US13657265
申请日：2012-10-22
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Hiroki Kiyama , Kenichi Yokouchi
IPC分类号： F24C7/00
CPC分类号： H01L21/67115
摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.
摘要翻译：在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。第二阶段的排放量是峰值的三分之二以上。第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

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