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1. 发明申请

US20120146017A1 OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US20120146017A1
公开(公告)日：2012-06-14
申请号：US13324751
申请日：2011-12-13
申请人： Dae-Hwan KIM , Byung-Kook Choi , Sul Lee , Hoon Yim
发明人： Dae-Hwan KIM , Byung-Kook Choi , Sul Lee , Hoon Yim
IPC分类号： H01L33/08 , H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C═Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0).
摘要翻译：一种制造氧化物薄膜晶体管的方法，包括顺序地形成栅极绝缘膜，氧化物半导体层和第一绝缘层; 选择性地图案化氧化物半导体层和第一绝缘层以在栅电极上形成有源层和绝缘层图案; 在其上形成有活性层和绝缘层图案的基板上形成第二绝缘层; 以及选择性地图案化所述绝缘层图案和所述第二绝缘层以在所述有源层上形成第一和第二蚀刻阻挡层。氧化物半导体层可以是包含AxByCzO（A，B，C = Zn，Cd，Ga，In，Sn，Hf，Zr; x，y，z≥0）的组合的三元系或四元系氧化物半导体。

2. 发明授权

US08735883B2 Oxide thin film transistor and method of fabricating the same 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US08735883B2
公开(公告)日：2014-05-27
申请号：US13324751
申请日：2011-12-13
申请人： Dae-Hwan Kim , Byung-Kook Choi , Sul Lee , Hoon Yim
发明人： Dae-Hwan Kim , Byung-Kook Choi , Sul Lee , Hoon Yim
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0).
摘要翻译：一种制造氧化物薄膜晶体管的方法，包括顺序地形成栅极绝缘膜，氧化物半导体层和第一绝缘层; 选择性地图案化氧化物半导体层和第一绝缘层以在栅电极上形成有源层和绝缘层图案; 在其上形成有活性层和绝缘层图案的基板上形成第二绝缘层; 以及选择性地图案化所述绝缘层图案和所述第二绝缘层以在所述有源层上形成第一和第二蚀刻阻挡层。氧化物半导体层可以是包含AxByCzO（A，B，C = Zn，Cd，Ga，In，Sn，Hf，Zr; x，y，z≥0）的组合的三元系或四元系氧化物半导体。

3. 发明申请

US20110278565A1 OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US20110278565A1
公开(公告)日：2011-11-17
申请号：US13106482
申请日：2011-05-12
申请人： Hoon Yim , Dae-Hwan Kim
发明人： Hoon Yim , Dae-Hwan Kim
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/7869
摘要： An oxide thin film transistor (TFT) and a fabrication method thereof are provided. The method for fabricating an oxide thin film transistor (TFT) comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate with the gate electrode formed thereon; forming an active layer made of oxide semiconductor on the gate insulating layer; forming a contact layer on the substrate with the active layer formed thereon and forming source and drain electrodes, which are electrically connected with source and drain regions of the active layer through the contact layer, on the contact layer; forming a protective layer on the substrate with the source and drain electrodes formed thereon; forming a contact hole by removing the protective layer to expose the drain electrode; and forming a pixel electrode electrically connected with the drain electrode through the contact hole, wherein the contact layer is made of oxide including a different metal or conductivity with that of the source and drain electrodes, to adjust a threshold voltage according to the difference in a work function.
摘要翻译：提供一种氧化物薄膜晶体管（TFT）及其制造方法。制造氧化物薄膜晶体管（TFT）的方法包括：在基板上形成栅电极; 在其上形成有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成由氧化物半导体制成的有源层; 在其上形成有源层的衬底上形成接触层，并形成在接触层上通过接触层与有源层的源极和漏极区域电连接的源极和漏极; 在其上形成有源电极和漏电极的衬底上形成保护层; 通过去除保护层来形成接触孔以露出漏电极; 以及形成通过所述接触孔与所述漏电极电连接的像素电极，其中，所述接触层由与所述源电极和漏电极不同的金属或导电性的氧化物构成，以根据所述漏极电极的差异来调整阈值电压工作功能。

4. 发明授权

US08604470B2 Oxide thin film transistor and method of fabricating the same 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US08604470B2
公开(公告)日：2013-12-10
申请号：US13106482
申请日：2011-05-12
申请人： Hoon Yim , Dae-Hwan Kim
发明人： Hoon Yim , Dae-Hwan Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/7869
摘要： An oxide thin film transistor (TFT) and a fabrication method thereof are provided. The method for fabricating an oxide thin film transistor (TFT) comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate with the gate electrode formed thereon; forming an active layer made of oxide semiconductor on the gate insulating layer; forming a contact layer on the substrate with the active layer formed thereon and forming source and drain electrodes, which are electrically connected with source and drain regions of the active layer through the contact layer, on the contact layer; forming a protective layer on the substrate with the source and drain electrodes formed thereon; forming a contact hole by removing the protective layer to expose the drain electrode; and forming a pixel electrode electrically connected with the drain electrode through the contact hole, wherein the contact layer is made of oxide including a different metal or conductivity with that of the source and drain electrodes, to adjust a threshold voltage according to the difference in a work function.
摘要翻译：提供一种氧化物薄膜晶体管（TFT）及其制造方法。制造氧化物薄膜晶体管（TFT）的方法包括：在基板上形成栅电极; 在其上形成有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成由氧化物半导体制成的有源层; 在其上形成有源层的衬底上形成接触层，并形成在接触层上通过接触层与有源层的源极和漏极区域电连接的源极和漏极; 在其上形成有源电极和漏电极的衬底上形成保护层; 通过去除保护层来形成接触孔以露出漏电极; 以及形成通过所述接触孔与所述漏电极电连接的像素电极，其中，所述接触层由与所述源电极和漏电极不同的金属或导电性的氧化物构成，以根据所述漏极电极的差异来调整阈值电压工作功能。

5. 发明授权

US08803144B2 Thin film transistor susbtrate including oxide semiconductor 有权
标题翻译：薄膜晶体管包括氧化物半导体
公开(公告)号：US08803144B2
公开(公告)日：2014-08-12
申请号：US13333720
申请日：2011-12-21
申请人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
发明人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
IPC分类号： H01L29/786 , H01L27/12 , H01L21/16
CPC分类号： H01L29/786 , G02F1/13439 , G02F1/136209 , H01L21/16 , H01L27/1225
摘要： The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.
摘要翻译：本公开涉及一种用于包括氧化物半导体的平板显示装置的薄膜晶体管基板。本公开提出了一种用于平板显示装置的薄膜晶体管基板，包括：透明基板; 具有设置在所述透明基板上的氧化物半导体材料的薄膜晶体管层; 设置在所述薄膜晶体管层的整个表面上的钝化层; 形成在所述钝化层上并通过形成在所述钝化层处的接触孔与所述薄膜晶体管层接触的像素电极; 以及设置在像素电极的整个表面上的第一紫外光吸收层。吸收所有的紫外光并通过所有可见光，光热特性得到提高，透明性不会降低。

6. 发明申请

US20120168746A1 THIN FILM TRANSISTOR SUSBTRATE INCLUDING OXIDE SEMICONDUCTOR 有权
标题翻译：薄膜晶体管，包括氧化物半导体
公开(公告)号：US20120168746A1
公开(公告)日：2012-07-05
申请号：US13333720
申请日：2011-12-21
申请人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
发明人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , G02F1/13439 , G02F1/136209 , H01L21/16 , H01L27/1225
摘要： The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.
摘要翻译：本公开涉及一种用于包括氧化物半导体的平板显示装置的薄膜晶体管基板。本公开提出了一种用于平板显示装置的薄膜晶体管基板，包括：透明基板; 具有设置在所述透明基板上的氧化物半导体材料的薄膜晶体管层; 设置在所述薄膜晶体管层的整个表面上的钝化层; 形成在所述钝化层上并通过形成在所述钝化层处的接触孔与所述薄膜晶体管层接触的像素电极; 以及设置在像素电极的整个表面上的第一紫外光吸收层。吸收所有的紫外光并通过所有可见光，光热特性得到提高，透明性不会降低。

7. 发明申请

US20060051662A1 Electrode assembly and rechargeable battery using the same 有权
标题翻译：电极组件和可充电电池使用相同
公开(公告)号：US20060051662A1
公开(公告)日：2006-03-09
申请号：US11165320
申请日：2005-06-24
申请人： Yoon Kwak , Eui Hong , Soo Maeng , Hoon Yim
发明人： Yoon Kwak , Eui Hong , Soo Maeng , Hoon Yim
IPC分类号： H01M2/18
CPC分类号： H01M10/0431 , H01M10/0525 , H01M10/0587 , H01M2200/00
摘要： An electrode assembly is adapted to prevent the separator from contracting due to heat that is generated near the electrode tab during overcharging, over-discharging, or in the case of an internal short circuit. The electrode assembly also prevents an additional short circuit between the electrode plates. A rechargeable battery that comprises the electrode assembly is also provided. The present invention prevents the electrode tab from being short-circuited due to increased heat generation during overcharging or in the case of a short circuit, thus improving the safety of the rechargeable battery.
摘要翻译：电极组件适于防止由于在过充电，过放电期间或在内部短路的情况下由于在电极接线片附近产生的热而使分离器收缩。电极组件还防止电极板之间的额外的短路。还提供了包括电极组件的可充电电池。本发明防止电极片由于过充电期间的发热增加或短路的情况而发生短路，从而提高了可再充电电池的安全性。

8. 发明授权

US07931980B2 Electrode assembly and rechargeable battery using the same 有权
标题翻译：电极组件和可充电电池使用相同
公开(公告)号：US07931980B2
公开(公告)日：2011-04-26
申请号：US11165320
申请日：2005-06-24
申请人： Yoon Tai Kwak , Eui Sun Hong , Soo Yeon Maeng , Hoon Yim
发明人： Yoon Tai Kwak , Eui Sun Hong , Soo Yeon Maeng , Hoon Yim
IPC分类号： H01M2/18 , H01M2/16 , H01M4/00
CPC分类号： H01M10/0431 , H01M10/0525 , H01M10/0587 , H01M2200/00
摘要： An electrode assembly is adapted to prevent the separator from contracting due to heat that is generated near the electrode tab during overcharging, over-discharging, or in the case of an internal short circuit. The electrode assembly also prevents an additional short circuit between the electrode plates. A rechargeable battery that comprises the electrode assembly is also provided. The present invention prevents the electrode tab from being short-circuited due to increased heat generation during overcharging or in the case of a short circuit, thus improving the safety of the rechargeable battery.
摘要翻译：电极组件适于防止由于在过充电，过放电期间或在内部短路的情况下由于在电极接线片附近产生的热而使分离器收缩。电极组件还防止电极板之间的额外的短路。还提供了包括电极组件的可充电电池。本发明防止电极片由于过充电期间的发热增加或短路的情况而发生短路，从而提高了可再充电电池的安全性。

9. 发明申请

US20060216578A1 Lithium secondary battery 有权
标题翻译：锂二次电池
公开(公告)号：US20060216578A1
公开(公告)日：2006-09-28
申请号：US11377950
申请日：2006-03-16
申请人： Teak Kwon , Chang Shin , Hoon Yim
发明人： Teak Kwon , Chang Shin , Hoon Yim
IPC分类号： H01M2/12 , H01M2/02 , H01M2/08 , H01M2/04 , H01M10/04
CPC分类号： H01M2/1241 , H01M2/0473 , H01M2/0482 , H01M2/22 , H01M10/052 , H01M10/058 , Y10T29/49108
摘要： A lithium secondary battery having a cap assembly including a cap plate, an insulation plate and a terminal plate. The insulation plate and the terminal plate each have a predetermined vent hole corresponding to a safety vent formed on the cap plate so that if the secondary battery is dropped, an electrolyte passes through the vent-holes and undergoes a pressure reduction, thereby preventing fracture of a safety vent by the electrolyte while allowing gas to be exhausted upon battery overcharge, full discharge or by overheating.
摘要翻译：一种具有盖组件的锂二次电池，包括盖板，绝缘板和端子板。绝缘板和端子板各自具有与形成在盖板上的安全通气口相对应的预定通气孔，使得如果二次电池掉落，则电解液通过通气孔并进行减压，从而防止通过电解液的安全排气口，同时在电池过充电，完全放电或过热时允许气体排出。

10. 发明申请

US20060099501A1 Secondary battery 审中-公开
标题翻译：二次电池
公开(公告)号：US20060099501A1
公开(公告)日：2006-05-11
申请号：US11261392
申请日：2005-10-27
申请人： Ka Kim , Eui Hong , Kyoung Kim , Byung Jung , Young Kwon , Jin Lee , Hoon Yim , Kum Kim
发明人： Ka Kim , Eui Hong , Kyoung Kim , Byung Jung , Young Kwon , Jin Lee , Hoon Yim , Kum Kim
IPC分类号： H01M2/08 , H01M2/04
CPC分类号： H01M2/04 , H01M2/0482 , H01M2/08
摘要： A secondary battery having an electrode assembly with improved battery capacity. The secondary battery has an electrode assembly including two electrodes and a separator, a case made from an insulative material and having an opening at an upper portion thereof for receiving the electrode assembly therein, and a cap assembly including a cap plate made from an insulative material for sealing the opening to prevent the electrode assembly from being separated from the case.
摘要翻译：一种二次电池，具有电池容量提高的电极组件。二次电池具有包括两个电极和隔板的电极组件，由绝缘材料制成并在其上部具有用于接收电极组件的开口的壳体，以及盖组件，其包括由绝缘材料制成的盖板用于密封开口以防止电极组件与壳体分离。

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