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1. 发明授权

US08735883B2 Oxide thin film transistor and method of fabricating the same 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US08735883B2
公开(公告)日：2014-05-27
申请号：US13324751
申请日：2011-12-13
申请人： Dae-Hwan Kim , Byung-Kook Choi , Sul Lee , Hoon Yim
发明人： Dae-Hwan Kim , Byung-Kook Choi , Sul Lee , Hoon Yim
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0).
摘要翻译：一种制造氧化物薄膜晶体管的方法，包括顺序地形成栅极绝缘膜，氧化物半导体层和第一绝缘层; 选择性地图案化氧化物半导体层和第一绝缘层以在栅电极上形成有源层和绝缘层图案; 在其上形成有活性层和绝缘层图案的基板上形成第二绝缘层; 以及选择性地图案化所述绝缘层图案和所述第二绝缘层以在所述有源层上形成第一和第二蚀刻阻挡层。氧化物半导体层可以是包含AxByCzO（A，B，C = Zn，Cd，Ga，In，Sn，Hf，Zr; x，y，z≥0）的组合的三元系或四元系氧化物半导体。

2. 发明申请

US20120146017A1 OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US20120146017A1
公开(公告)日：2012-06-14
申请号：US13324751
申请日：2011-12-13
申请人： Dae-Hwan KIM , Byung-Kook Choi , Sul Lee , Hoon Yim
发明人： Dae-Hwan KIM , Byung-Kook Choi , Sul Lee , Hoon Yim
IPC分类号： H01L33/08 , H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C═Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0).
摘要翻译：一种制造氧化物薄膜晶体管的方法，包括顺序地形成栅极绝缘膜，氧化物半导体层和第一绝缘层; 选择性地图案化氧化物半导体层和第一绝缘层以在栅电极上形成有源层和绝缘层图案; 在其上形成有活性层和绝缘层图案的基板上形成第二绝缘层; 以及选择性地图案化所述绝缘层图案和所述第二绝缘层以在所述有源层上形成第一和第二蚀刻阻挡层。氧化物半导体层可以是包含AxByCzO（A，B，C = Zn，Cd，Ga，In，Sn，Hf，Zr; x，y，z≥0）的组合的三元系或四元系氧化物半导体。

3. 发明授权

US08803144B2 Thin film transistor susbtrate including oxide semiconductor 有权
标题翻译：薄膜晶体管包括氧化物半导体
公开(公告)号：US08803144B2
公开(公告)日：2014-08-12
申请号：US13333720
申请日：2011-12-21
申请人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
发明人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
IPC分类号： H01L29/786 , H01L27/12 , H01L21/16
CPC分类号： H01L29/786 , G02F1/13439 , G02F1/136209 , H01L21/16 , H01L27/1225
摘要： The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.
摘要翻译：本公开涉及一种用于包括氧化物半导体的平板显示装置的薄膜晶体管基板。本公开提出了一种用于平板显示装置的薄膜晶体管基板，包括：透明基板; 具有设置在所述透明基板上的氧化物半导体材料的薄膜晶体管层; 设置在所述薄膜晶体管层的整个表面上的钝化层; 形成在所述钝化层上并通过形成在所述钝化层处的接触孔与所述薄膜晶体管层接触的像素电极; 以及设置在像素电极的整个表面上的第一紫外光吸收层。吸收所有的紫外光并通过所有可见光，光热特性得到提高，透明性不会降低。

4. 发明申请

US20120168746A1 THIN FILM TRANSISTOR SUSBTRATE INCLUDING OXIDE SEMICONDUCTOR 有权
标题翻译：薄膜晶体管，包括氧化物半导体
公开(公告)号：US20120168746A1
公开(公告)日：2012-07-05
申请号：US13333720
申请日：2011-12-21
申请人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
发明人： Hoon Yim , Daehwan Kim , Byungkook Choi , Sul Lee
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , G02F1/13439 , G02F1/136209 , H01L21/16 , H01L27/1225
摘要： The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.
摘要翻译：本公开涉及一种用于包括氧化物半导体的平板显示装置的薄膜晶体管基板。本公开提出了一种用于平板显示装置的薄膜晶体管基板，包括：透明基板; 具有设置在所述透明基板上的氧化物半导体材料的薄膜晶体管层; 设置在所述薄膜晶体管层的整个表面上的钝化层; 形成在所述钝化层上并通过形成在所述钝化层处的接触孔与所述薄膜晶体管层接触的像素电极; 以及设置在像素电极的整个表面上的第一紫外光吸收层。吸收所有的紫外光并通过所有可见光，光热特性得到提高，透明性不会降低。

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