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1. 发明申请

US20090025755A1 Method for treating substrate 审中-公开
标题翻译：底物处理方法
公开(公告)号：US20090025755A1
公开(公告)日：2009-01-29
申请号：US12219562
申请日：2008-07-24
申请人： Dae-Hong Eom , Chang-Ki Hong , Woo-Gwan Shim , Young-Ok Kim
发明人： Dae-Hong Eom , Chang-Ki Hong , Woo-Gwan Shim , Young-Ok Kim
IPC分类号： B08B3/10
CPC分类号： B08B3/04 , B08B3/10 , H01L21/67034 , H01L21/67051
摘要： Example embodiments relate to a method of treating a substrate after performing a cleaning step with a liquid chemical in a single substrate spin cleaner. A method of treating a substrate according to example embodiments may include forming a film of deionized water on a surface of the substrate during rinsing, and drying the substrate by supplying a drying gas to the water film on the surface of the substrate. When rinsing the substrate, the rotating speed of the substrate may be reduced to about 50 rpm or less to form a film of water on the surface of the substrate. The film of water may shield the surface of the substrate from direct exposure to atmospheric air. The film of water may be maintained on the surface of the substrate when commencing the supply of the drying gas. Consequently, the number of water marks on the dried substrate may be reduced or prevented.
摘要翻译：示例性实施方案涉及在单个底物旋转清洁剂中用液体化学品进行清洁步骤之后处理基材的方法。根据示例性实施方案的处理基材的方法可以包括在漂洗期间在基材的表面上形成去离子水膜，并通过向基材表面上的水膜供应干燥气体来干燥基材。当冲洗基板时，基板的旋转速度可以降低到约50rpm或更小，以在基板的表面上形成水膜。水膜可以屏蔽衬底表面直接暴露于大气中。当开始供应干燥气体时，水膜可以保持在基板的表面上。因此，可以减少或防止干燥的基板上的水痕的数量。

2. 发明授权

US08637942B2 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US08637942B2
公开(公告)日：2014-01-28
申请号：US12461992
申请日：2009-08-31
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L29/78
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

3. 发明授权

US08084367B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08084367B2
公开(公告)日：2011-12-27
申请号：US11752834
申请日：2007-05-23
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： H01L21/302
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

4. 发明授权

US07825030B2 Method of forming a spacer 有权
标题翻译：形成间隔物的方法
公开(公告)号：US07825030B2
公开(公告)日：2010-11-02
申请号：US12277332
申请日：2008-11-25
申请人： Yu-Kyung Kim , Kun-Tack Lee , Woo-Gwan Shim , Chang-Ki Hong
发明人： Yu-Kyung Kim , Kun-Tack Lee , Woo-Gwan Shim , Chang-Ki Hong
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/30617 , H01L21/31111 , H01L21/76802 , H01L21/76831 , H01L21/76897 , H01L29/6653
摘要： A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.
摘要翻译：使用牺牲层和湿蚀刻来形成侧壁间隔物，以便防止对形成间隔物的结构和下面的衬底造成损坏。一旦在衬底上形成结构，形成间隔物形成层以覆盖该结构，并且在间隔物形成层上形成牺牲层。对牺牲层进行湿式蚀刻以在沿着结构的侧壁延伸的间隔物形成层的该部分上形成牺牲层图案。通过使用牺牲层图案作为掩模湿蚀刻间隔物形成层，在该结构的侧壁上形成间隔物。

5. 发明授权

US07700496B2 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
公开(公告)号：US07700496B2
公开(公告)日：2010-04-20
申请号：US11358082
申请日：2006-02-22
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

6. 发明申请

US20100019292A1 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US20100019292A1
公开(公告)日：2010-01-28
申请号：US12461992
申请日：2009-08-31
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L29/78 , C09K13/00 , C09K13/02 , C09K13/04 , C09K13/08 , C09K13/06
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

7. 发明授权

US07544985B2 Semiconductor capacitor structure and method for manufacturing the same 有权
标题翻译：半导体电容器结构及其制造方法
公开(公告)号：US07544985B2
公开(公告)日：2009-06-09
申请号：US11312952
申请日：2005-12-19
申请人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/91
摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.
摘要翻译：在一个实施例中，半导体器件包括形成在基底上的基部和锥形壁。壁具有中线并且还具有内侧壁和外侧壁。内侧壁和外侧壁相对于中线彼此基本对称。因此，可以提高半导体电容器结构的可靠性，并且可以提高吞吐量。此外，根据本发明的原理，可以促进半导体器件的进一步缩小。

8. 发明授权

US07498217B2 Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers 失效
标题翻译：制造具有电荷捕获层的单元电池的半导体存储器件的方法
公开(公告)号：US07498217B2
公开(公告)日：2009-03-03
申请号：US11746761
申请日：2007-05-10
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwan Shim , Jong-Won Lee
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwan Shim , Jong-Won Lee
IPC分类号： H01L21/8238 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.
摘要翻译：在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。形成从衬底突出的隔离层以填充沟槽。在基板上形成第一层之后，在第一层上形成预备的第二层图案。预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。在初步第二层和隔离层上形成第三层。在第三层上形成第四层。部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

9. 发明申请

US20070178706A1 Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same 有权
标题翻译：硅表面清洗液及使用其制造半导体器件的方法
公开(公告)号：US20070178706A1
公开(公告)日：2007-08-02
申请号：US11656470
申请日：2007-01-23
申请人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
IPC分类号： H01L21/302
CPC分类号： H01L21/02063
摘要： A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may include 0.01 to 1 wt % of fluoric acid, 20 to 50 wt % of oxidizer and 50 to 80 wt % of water. The cleaning solution may further include 1 to 20 wt % of acetic acid. The cleaning solution may be used Lo clean a silicon surface exposed during fabrication processes of a semiconductor device. The cleaning solution may reduce damage of other material layers (e.g., a tungsten layer or a silicon oxide layer) and enable the silicon surface to be selectively etched.
摘要翻译：提供一种清洁溶液和使用其制造半导体器件的方法。还提供了用于清洁硅表面的清洁溶液以及使用其制造半导体器件的方法。清洗液可以含有0.01〜1重量％的氟酸，20〜50重量％的氧化剂和50〜80重量％的水。清洗溶液还可以含有1〜20重量％的乙酸。可以使用清洁溶液Lo清洁在半导体器件的制造过程中暴露的硅表面。清洁溶液可以减少其它材料层（例如，钨层或氧化硅层）的损伤，并且能够选择性地蚀刻硅表面。

10. 发明申请

US20070163618A1 Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same 有权
标题翻译：硅表面清洗液及使用其制造半导体器件的方法
公开(公告)号：US20070163618A1
公开(公告)日：2007-07-19
申请号：US11489494
申请日：2006-07-20
申请人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
IPC分类号： B08B6/00
CPC分类号： C11D11/0047 , C11D7/02 , C11D7/08 , C11D7/10 , C11D7/265 , H01L21/02057 , H01L21/02063
摘要： There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH3COOH) and ammonium acetate (CH3COONH4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.
摘要翻译：提供了含有含有乙酸（CH 3 COOH）和乙酸铵（CH 3 COCO 4）的缓冲溶液的硅表面的清洗溶液 >），碘氧化剂，氢氟酸（HF）和水。在制造半导体器件的方法中，硅衬底可以具有暴露的硅表面，其可以使用包含含有乙酸和乙酸铵，碘氧化剂，氢氟酸和水的缓冲溶液的清洁溶液进行清洁。

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