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1. 发明申请

US20060156635A1 Abrasive particles, polishing slurry, and producing method thereof 审中-公开
标题翻译：磨料颗粒，抛光浆料及其制备方法
公开(公告)号：US20060156635A1
公开(公告)日：2006-07-20
申请号：US11305535
申请日：2005-12-16
申请人： Dae Kim , Seok Hong , Yong Kim , Dong Kim , Myoung Suh , Jea Park , Un Paik
发明人： Dae Kim , Seok Hong , Yong Kim , Dong Kim , Myoung Suh , Jea Park , Un Paik
IPC分类号： C09K3/14
CPC分类号： C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.
摘要翻译：本文公开了一种用于STI CMP工艺的抛光浆料，其是制造256兆D-RAM以上的超高度集成半导体（设计规则为0.13μm或更小）所必需的，其可以以高去除速度抛光晶片，具有与氮化物相比，氧化物的去除选择性优异。研磨浆料可以应用于制造超高度集成半导体的过程中所需的各种图案，因此优异的去除速度，去除选择性和晶片内不均匀性（WIWNU），这表明去除均匀性，以及最小的发生微划痕，可以放心。

2. 发明申请

US20070279940A1 Optical Sheet and Backlight Assembly Having the Same 有权
标题翻译：光学片和背光组件具有相同的功能
公开(公告)号：US20070279940A1
公开(公告)日：2007-12-06
申请号：US11734611
申请日：2007-04-12
申请人： Cheul Kim , Sang Kim , Jong Huh , Dong Kim , Ju Lee , Min Kim , Hyun Shin , Yong Kim
发明人： Cheul Kim , Sang Kim , Jong Huh , Dong Kim , Ju Lee , Min Kim , Hyun Shin , Yong Kim
IPC分类号： F21V8/00 , G02B5/02
CPC分类号： G02B5/045
摘要： Provided are embodiments of an optical sheet and a backlight assembly having the optical sheet. The optical sheet can include a body, a plurality of protrusions, and a plurality of embossed portions. The body can form a substrate. One surface of the body can be provided in a planar shape, and the other surface of the body can include the plurality of protrusions, where the protrusions have a triangular shaped cross-section. Each of the protrusions can be configured with the plurality of embossed, which may be formed by a microlens pattern.
摘要翻译：提供了具有光学片的光学片和背光组件的实施例。光学片可以包括主体，多个突起和多个压花部分。身体可以形成底物。身体的一个表面可以设置成平面形状，并且主体的另一个表面可以包括多个突起，其中突起具有三角形的横截面。每个突起可以配置有多个压花，其可以由微透镜图案形成。

3. 发明申请

US20060234407A1 Method of fabricating vertical structure nitride semiconductor light emitting device 审中-公开
标题翻译：制造垂直结构氮化物半导体发光器件的方法
公开(公告)号：US20060234407A1
公开(公告)日：2006-10-19
申请号：US11311169
申请日：2005-12-20
申请人： Dong Kim , Yong Kim , Bok Min
发明人： Dong Kim , Yong Kim , Bok Min
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/20
摘要： A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.
摘要翻译：一种制造垂直结构的氮化物半导体发光器件的方法，所述垂直结构氮化物半导体发光器件具有五边或多边的多边形的横截面形状。在蓝宝石衬底上形成发光结构。在发光结构上形成具有多个图案的金属层。金属层的图案各自具有与期望的最终发光器件的横截面形状相对应的形状，并且间隔开预定距离，使得发光结构的上表面部分地露出。通过在金属层的图案之间的暴露区域下方去除发光结构，将发光结构分为多个单独的发光结构。通过照射激光束将蓝宝石衬底与发光结构分离。

4. 发明申请

US20060024584A1 Additives for lithium secondary battery 审中-公开
标题翻译：锂二次电池添加剂
公开(公告)号：US20060024584A1
公开(公告)日：2006-02-02
申请号：US11139897
申请日：2005-05-27
申请人： Dong Kim , Jong Yoon , Yong Kim , Benjamin Cho , Jun Jeong , Dae Jeong , Joon Bae
发明人： Dong Kim , Jong Yoon , Yong Kim , Benjamin Cho , Jun Jeong , Dae Jeong , Joon Bae
IPC分类号： H01M10/40 , H01M4/58
CPC分类号： H01M10/052 , H01M4/131 , H01M4/133 , H01M10/0567 , H01M10/4235 , H01M2004/021 , H01M2010/4292 , H01M2300/0048
摘要： Disclosed is a lithium secondary battery comprising a cathode (C), an anode (A), a separator and an electrolyte, wherein the electrolyte comprises: (a) a nitrile group-containing compound and (b) a compound having a reaction potential of 4.7V or higher. The lithium secondary battery can prevent the problems caused by a nitrile group-containing compound added to the electrolyte for the purpose of improving high-temperature cycle characteristics and safety (such problems as a battery swelling phenomenon and a drop in recovery capacity under high-temperature (>80° C.) storage conditions), by adding a fluorotoluene compound.
摘要翻译：公开了包含阴极（C），阳极（A），隔膜和电解质的锂二次电池，其中电解质包含：（a）含腈基化合物和（b）具有反应电位的化合物 4.7V以上。锂二次电池可以防止由于添加到电解质中的含腈基化合物引起的问题，以提高高温循环特性和安全性（电池膨胀现象和高温下的回收能力下降等问题（> 80℃）保存条件），加入氟代甲苯化合物。

5. 发明申请

US20070131971A1 Hetero junction bipolar transistor and method of manufacturing the same 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US20070131971A1
公开(公告)日：2007-06-14
申请号：US11634614
申请日：2006-12-06
申请人： Yong Kim , Eun Nam , Ho Kim , Sang Lee , Dong Jun , Hong Lee , Seon Hong , Dong Kim , Jong Lim , Myoung Oh
发明人： Yong Kim , Eun Nam , Ho Kim , Sang Lee , Dong Jun , Hong Lee , Seon Hong , Dong Kim , Jong Lim , Myoung Oh
IPC分类号： H01L31/00
CPC分类号： H01L29/7371 , H01L29/0817 , H01L29/41708 , H01L29/66318
摘要： Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.
摘要翻译：提供了可以提高数据处理速度的异质结双极晶体管（HBT）和制造异质结双极晶体管的方法。 HBT包括半绝缘复合基板，形成在半绝缘复合基板上的副集电极层，在副集电极层的预定部分上彼此隔开预定距离设置的一对集电极，集电极层和设置在集电极之间的基极层，在基极层的预定部分上彼此隔开预定距离设置的一对基底电极，设置在基极之间的发射极层叠层和发射极电极，形成在发射极层堆叠上，并且包括具有比发射极层堆叠的线宽宽的线宽的部分，其中发射极电极的两个侧壁分别与一对基底电极的内壁对齐，并且侧壁集电极层和基极层位于该对基极的一对基极的外侧壁之间。

6. 发明申请

US20060234408A1 Method for manufacturing vertical group III-nitride light emitting device 有权
标题翻译：垂直III族氮化物发光器件的制造方法
公开(公告)号：US20060234408A1
公开(公告)日：2006-10-19
申请号：US11401329
申请日：2006-04-11
申请人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
发明人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/405 , H01L2933/0083
摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
摘要翻译：本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。然后，绝缘层被选择性地蚀刻以形成绝缘图案，并且n掺杂的Al x（1-xy） N层，有源层和p掺杂的Al N n N n层（1-mn）N层依次形成在绝缘层模式。导电衬底形成在p掺杂的Al（n-n）N层上。去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂的Al x Ga y y y的暴露表面的一部分上形成n电极，（1-xy）N层。

7. 发明申请

US20060178428A1 7-Carboxymethyloxy-3',4',5-trimethoxy flavone monohydrate, the preparation method and uses thereof 失效
标题翻译： 7-羧甲氧基-3'，4'，5-三甲氧基黄酮一水合物，其制备方法和用途
公开(公告)号：US20060178428A1
公开(公告)日：2006-08-10
申请号：US10564128
申请日：2004-09-04
申请人： Moohi Yoo , Dong Kim , Yong Kim , Wonbae Kim
发明人： Moohi Yoo , Dong Kim , Yong Kim , Wonbae Kim
IPC分类号： A61K31/353 , C07D311/74
CPC分类号： A61K31/352 , C07D311/30 , Y02P20/55
摘要： The present invention relates to 7-carboxymethyloxy-3′, 4′, 5-trimethoxy flavone.monohydrate which is a non hygroscopic product suitable for the preparation of metered dose of 7-carboxymethyloxy-3′, 4′, 5-trimethoxy flavone having protective activity for gastrointestinal tract including the colon, and a preparation method and uses thereof. 7-carboxymethyloxy-3′, 4′, 5-trimethoxy flavone.monohydrate of the present invention has advantages such as mucus protecting activity for gastrointestinal tract including the colon, convenience for handling and storage under ordinary humidity owing to its non-hygroscopicity, and ability to contain an active compound consistently for the formulation production of a medicine. In addition, the preparation method of 7-carboxymethyloxy-3′, 4′, 5-trimethoxy flavone.monohydrate of the present invention reduces long steps of total synthesis and requires mild conditions for the production of a compound because autoclave condition is not necessary for methylation in this case, and makes mass-production possible without any purification process such as recrystallization or column chromatography.
摘要翻译：本发明涉及7-羧甲氧基-3'，4'，5-三甲氧基黄酮一水合物，它是适用于制备计量剂量的7-羧甲氧基-3'，4'，5-三甲氧基黄酮的非吸湿产品，其具有包括结肠在内的胃肠道的保护活性及其制备方法和用途。本发明的7-羧甲氧基-3'，4'，5-三甲氧基黄酮一水合物具有诸如包括结肠在内的胃肠道的粘液保护活性，由于其不吸湿性而在常湿下容易处理和储存的优点，以及能够一致地含有活性化合物来制备药物。此外，本发明的7-羧甲氧基-3'，4'，5-三甲氧基黄酮一水合物的制备方法减少了总合成的长步骤，并且由于不需要高压灭菌条件，因此对于化合物的制备需要温和的条件在这种情况下甲基化，并且可以在没有任何纯化方法如重结晶或柱色谱法的情况下批量生产。

8. 发明申请

US20080026800A1 MOBILE COMMUNICATION TERMINAL AND METHOD FOR CREATING MENU SCREEN FOR THE SAME 审中-公开
标题翻译：移动通信终端和用于为其创建菜单屏幕的方法
公开(公告)号：US20080026800A1
公开(公告)日：2008-01-31
申请号：US11828175
申请日：2007-07-25
申请人： Sang Daek LEE , Bo Kim , Yong Kim , Sun Shin , Dong Kim , Ji Han , Byoung Kim
发明人： Sang Daek LEE , Bo Kim , Yong Kim , Sun Shin , Dong Kim , Ji Han , Byoung Kim
IPC分类号： H04B1/38
CPC分类号： H04M1/72544 , G06F3/04817 , G06F3/0482 , H04M1/72583
摘要： A mobile communication terminal including a display unit configured to display information, and a controller configured to allocate at least first and second specified display regions on the display unit and to display at least first and second menu items in a combined form with respective multimedia images on the at least first and second specified display regions, respectively.
摘要翻译：一种移动通信终端，包括被配置为显示信息的显示单元，以及控制器，被配置为在所述显示单元上分配至少第一和第二指定显示区域，并且以组合形式显示与各个多媒体图像有关的至少第一和第二菜单项至少第一和第二指定显示区域。

9. 发明申请

US20060225644A1 Vertical group III-nitride light emitting device and method for manufacturing the same 审中-公开
标题翻译：垂直III族氮化物发光器件及其制造方法
公开(公告)号：US20060225644A1
公开(公告)日：2006-10-12
申请号：US11398713
申请日：2006-04-06
申请人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
发明人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.
摘要翻译：提供了垂直III族氮化物发光器件及其制造方法。发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂的Al x Ga y In 1 N x N y N n层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。未掺杂的GaN层在其顶表面上形成粗糙图案。

10. 发明申请

US20060202227A1 Vertical type nitride semiconductor light emitting diode 有权
标题翻译：垂直型氮化物半导体发光二极管
公开(公告)号：US20060202227A1
公开(公告)日：2006-09-14
申请号：US11153500
申请日：2005-06-16
申请人： Dong Kim , Yong Kim , Hyun Kim
发明人： Dong Kim , Yong Kim , Hyun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.
摘要翻译：本文公开了垂直型氮化物半导体发光二极管。氮化物半导体发光二极管包括n型氮化物半导体层，在n型氮化物半导体层下面形成的有源层，在有源层下面形成的p型氮化物半导体层和n侧电极，形成在与n型氮化物半导体层的上表面的边缘相邻的接合焊盘和从接合焊盘形成为带状的至少一个延伸电极。 n侧电极的接合焊盘与作为发光面的n型氮化物半导体层的上表面的边缘相邻地形成，从而防止电线屏蔽从有源层发射的光。扩展电极可以形成为各种形状，并且防止电流密度的集中，从而确保电流密度的有效分布。

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