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    • 7. 发明申请
    • Method of fabricating MOS transistor
    • 制造MOS晶体管的方法
    • US20050142735A1
    • 2005-06-30
    • US11024792
    • 2004-12-30
    • Hyun Shin
    • Hyun Shin
    • H01L21/334H01L21/8238H01L21/8242
    • H01L21/823878H01L21/823814H01L21/823864H01L21/823892
    • A method of fabricating a CMOS (complementary metal oxide semiconductor) transistor includes manufacturing steps, by which adverse transistor characteristics can be prevented from being degraded by high-temperature annealing for hardening a screen oxide layer. The method includes steps of forming a gate on a semiconductor substrate with a gate oxide layer therebetween, forming a screen oxide layer on the substrate and the gate, forming a nitride layer on the screen oxide layer, forming LDD regions in the substrate substantially aligned with the gate, removing the nitride layer, forming a spacer on the screen oxide layer and on at least a portion of a sidewall of the gate, and forming in the substrate source/drain regions extending from the LDD regions respectively in the substrate substantially aligned with the spacer.
    • 制造CMOS(互补金属氧化物半导体)晶体管的方法包括制造步骤,由此通过用于硬化屏幕氧化物层的高温退火可以防止不利的晶体管特性劣化。 该方法包括以下步骤:在半导体衬底上形成栅极氧化层之间的栅极,在衬底和栅极上形成屏蔽氧化物层,在栅极氧化层上形成氮化物层,在衬底中形成基本上与 栅极,去除氮化物层,在屏幕氧化物层上和栅极的侧壁的至少一部分上形成间隔物,并且在基板上形成基板源极/漏极区域,该基板源极/漏极区域分别从基板上的LDD区域延伸,基本上与 间隔物。