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    • 7. 发明授权
    • Levitating support and positioning system
    • 悬浮支撑和定位系统
    • US5267091A
    • 1993-11-30
    • US732490
    • 1991-07-18
    • Peter C. Chen
    • Peter C. Chen
    • G02B7/182G02B7/183H01Q1/12G02B7/18H01H47/00
    • G02B7/183G02B7/1828H01Q1/125Y10S505/825
    • A levitating support and positioning system (10) is provided for orienting an electromagnetic energy reflecting assembly (40). System (10) includes a reflective member (60) supported by an annular ring (50) having a plurality of superconductors (70) disposed thereon. Ring (50) is levitated above a base surface (20) by means of a plurality of electromagnetic assemblies (30), each of the electromagnetic assemblies (30) corresponding to a respective one of the plurality of superconductive elements (70), whereby the magnetic fields generated by the electromagnetic assemblies (30) are repelled by the respective superconductive elements. The orientation of the support ring (50), and the reflector therewith, is adjusted by changing the relative magnetic field strength between each of the electromagnetic assemblies (30), allowing the reflector to be directed in both elevation and azimuth.
    • 悬浮支撑和定位系统(10)用于定向电磁能量反射组件(40)。 系统(10)包括由其上设置有多个超导体(70)的环形环(50)支撑的反射构件(60)。 环(50)通过多个电磁组件(30)悬浮在基座表面(20)上方,每个电磁组件(30)对应于多个超导元件(70)中的相应一个,由此 由电磁组件(30)产生的磁场被相应的超导元件排斥。 通过改变每个电磁组件(30)之间的相对磁场强度来调整支撑环(50)及其反射器的取向,从而允许反射器在高程和方位角都被定向。
    • 8. 发明授权
    • Static RAM cell
    • 静态RAM单元
    • US4554644A
    • 1985-11-19
    • US390082
    • 1982-06-21
    • Peter C. ChenAlex Au
    • Peter C. ChenAlex Au
    • G11C11/41G11C11/412H01L21/822H01L21/8244H01L23/532H01L27/04H01L27/088H01L27/11H01L29/78G11C11/40
    • H01L23/53271G11C11/412H01L27/0883H01L27/1104H01L27/1108H01L2924/0002
    • A static RAM cell (11) is constructed utilizing low resistivity positive and negative power supply leads (13,14), thus eliminating the problem of instability of the data stored within the cell. The negative power supply lead is formed of a first layer of low resistivity polycrystalline silicon/tantalum silicide, and the positive power supply lead is formed of a second layer of polycrystalline silicon. The use of a low resistivity negative power supply lead causes the voltage drop on the negative power supply lead to be substantially reduced as compared with prior art devices, thereby providing during the read operation substantially equal voltages to the gates of the two bistable transistors of each cell, thus eliminating the problem of instability during reading.Depletion load devices (11,12) are formed utilizing the layer of polycrystalline silicon as the source, drain and channel and the layer of polycrystalline silicon/tantalum silicide as the gate. In this manner, silicon area is not required to form the depletion load devices, thus minimizing cell size.
    • 使用低电阻正负电源引线(13,14)构造静态RAM单元(11),从而消除了存储在单元内的数据不稳定的问题。 负电源引线由第一层低电阻率多晶硅/钽硅化物形成,正电源引线由第二层多晶硅形成。 使用低电阻负电源引线使得与现有技术的器件相比,负电源引线上的电压降显着降低,从而在读操作期间提供与每个电容器的两个双稳态晶体管的栅极大致相等的电压 细胞,从而消除了阅读过程中不稳定的问题。 消耗负载装置(11,12)利用多晶硅层作为源极,漏极和沟道以及多晶硅/钽硅化物层作为栅极而形成。 以这种方式,不需要硅面积来形成耗尽负载装置,从而使电池尺寸最小化。