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    • 1. 发明授权
    • Wideband shielded coaxial to microstrip orthogonal launcher using distributed discontinuities
    • 宽带屏蔽同轴微带正交发射器使用分布式不连续性
    • US06236287B1
    • 2001-05-22
    • US09310525
    • 1999-05-12
    • Clifton QuanEdward L. RobertsonRosie M. JorgensonMark Y. HashimotoDavid E. Roberts
    • Clifton QuanEdward L. RobertsonRosie M. JorgensonMark Y. HashimotoDavid E. Roberts
    • H01P104
    • H01P5/085
    • A coaxial-to-microstrip vertical transition includes a dielectric substrate having formed on a first surface thereof a primary microstrip conductor trace, and on a second surface a secondary microstrip conductor trace. A first conductive via extends through the dielectric substrate and electrically connects the primary conductor trace to the secondary conductor trace. A second conductive via is spaced from the first conductive via and extends through the dielectric substrate to electrically connect the secondary conductor trace to the coaxial center conductor. A bottom microstrip ground plane layer is defined on the second substrate surface. A conductive base plate structure has a cavity formed therein, the substrate positioned such that the base plate structure is in contact with the bottom ground plane layer, and the secondary conductor trace is positioned over the cavity. The substrate is positioned between a cover structure and the base plate structure, the cover structure disposed in spaced relation with respect to the first surface of the substrate. A coaxial transmission line structure includes an outer shield and a coaxial center conductor structure disposed within the outer conductor and transverse to the substrate, the center conductor passed through an opening in the cover structure to contact the second via. A conductive plate structure is positioned between the plane of the cover structure and the substrate, providing shielding surrounding the center conductor between the cover and the substrate.
    • 同轴对微带垂直转变包括在其第一表面上形成有初级微带导体迹线的介质基片,在第二表面上形成次级微带导体迹线。 第一导电通孔延伸穿过电介质基板并将初级导体迹线电连接到次级导体迹线。 第二导电通孔与第一导电通孔间隔开并延伸穿过电介质基板,以将次导体迹线电连接到同轴中心导体。 底部微带接地平面层限定在第二基板表面上。 导电基板结构具有形成在其中的空腔,基板被定位成使得底板结构与底部接地平面层接触,并且次级导体迹线位于空腔上方。 基板位于盖结构和基板结构之间,盖结构相对于基板的第一表面间隔开设置。 同轴传输线结构包括外屏蔽和同轴中心导体结构,其设置在外导体内且横向于衬底,中心导体穿过盖结构中的开口以接触第二通孔。 导电板结构位于盖结构的平面和基板之间,提供围绕盖和基板之间的中心导体的屏蔽。
    • 2. 发明授权
    • Blind mate non-crimp pin RF connector
    • 盲配非压接针RF连接器
    • US6166615A
    • 2000-12-26
    • US154000
    • 1998-09-16
    • David T. WinslowClifton QuanHernan E. RomeroClaudio S. HowardEdward L. Robertson
    • David T. WinslowClifton QuanHernan E. RomeroClaudio S. HowardEdward L. Robertson
    • H01P1/04
    • H01P1/04
    • An RF connector includes male and female connector components. The male component has a multi-diameter dielectric housing cylinder with a metal center conductor extending through an opening in the housing. The center pin extends from each end of the dielectric housing. The center pin and the dielectric housing are sized appropriately to provide a matched impedance at microwave frequencies for the use environment to which the male component is connected. The female connector component includes a dielectric body having a center cavity formed therein. A compressible wire bundle forming a compressible conductor member is recessed into the cavity. The compressible conductor protrudes from the far end of the female cavity allowing contact to a mating circuitry. The male connector component is assembled with the female component, the male center pin being brought into electrical contact with the compressible conductor member. The female connector component is not mechanically mounted to the next level of interconnect, but instead the protruding compressible conductor is brought into compressive electrical contact with a mating circuitry on the next interconnect level.
    • RF连接器包括阳连接器和阴连接器部件。 阳部件具有多直径电介质容纳圆柱体,金属中心导体延伸穿过壳体中的开口。 中心销从电介质外壳的每一端延伸。 中心销和电介质外壳的尺寸适当,以在阳性部件连接到的使用环境中在微波频率处提供匹配的阻抗。 阴连接器部件包括其中形成有中心腔的电介质体。 形成可压缩导体部件的可压缩线束被凹入到空腔中。 可压缩导体从母腔的远端突出,允许与配合电路接触。 阳连接器部件与阴部件组装,阳中心销与可压缩导体部件电接触。 母连接器部件不是机械地安装到下一级互连,而是突出的可压缩导体与下一个互连级别上的匹配电路压缩电接触。
    • 3. 发明授权
    • Intra-array test probe
    • 阵列内测试探针
    • US5266959A
    • 1993-11-30
    • US766468
    • 1991-09-26
    • Edward L. Robertson
    • Edward L. Robertson
    • G01R29/10G01R29/08
    • G01R29/10
    • In an electronically scanned array where each radiating element extends outwardly from a face of the array (10), an intra-array test probe (20) is employed to test the propagation characteristics of an individual radiating element (13). The intra-array test probe (20) is adapted to be removable fitted over the radiating element (13) at one end and coupled to a test instrument at the other end. The intra-array test probe (20) channels RF signals to or from the test instrument to the radiating element (13) under test to test the propagation characteristics of the radiating element.
    • 在电子扫描阵列中,每个辐射元件从阵列(10)的表面向外延伸,使用阵列内测试探针(20)来测试个体辐射元件(13)的传播特性。 阵列内测试探针(20)适于在一端可拆卸地装配在辐射元件(13)上,并且在另一端耦合到测试仪器。 阵列内测试探针(20)将测试仪器的RF信号传送到被测试的辐射元件(13),以测试辐射元件的传播特性。