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1. 发明授权

US07649769B2 Circuit arrays having cells with combinations of transistors and nanotube switching elements 有权
标题翻译：具有晶体管和纳米管开关元件组合的单元的电路阵列
公开(公告)号：US07649769B2
公开(公告)日：2010-01-19
申请号：US11945710
申请日：2007-11-27
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
IPC分类号： G11C11/50 , G11C11/52
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.
摘要翻译：具有晶体管和纳米管开关组合的单元的电路阵列。在一个实施例中，单元被布置为成对，其中该对的纳米管开关元件交叉耦合，使得一个纳米管开关元件的设定电极耦合到另一个的释放电极，并且一个纳米管开关元件的释放电极为耦合到另一个的设定电极。纳米管制品耦合到参考线，并且一对场效应晶体管的源极耦合到设置电极到两个纳米管开关元件中的一个，并且该对的另一个场效应晶体管的源耦合到释放电极到两个纳米管开关元件中的一个。

2. 发明授权

US07301802B2 Circuit arrays having cells with combinations of transistors and nanotube switching elements 有权
公开(公告)号：US07301802B2
公开(公告)日：2007-11-27
申请号：US10864681
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
IPC分类号： G11C11/50 , G11C11/52
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor coupled to a nanotube switching element. The nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set electrode and a release electrode. The set electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.

3. 发明授权

US06982903B2 Field effect devices having a source controlled via a nanotube switching element 有权
标题翻译：通过纳米管开关元件控制源极的场效应器件
公开(公告)号：US06982903B2
公开(公告)日：2006-01-03
申请号：US10864045
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
IPC分类号： G11C11/00
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The drain region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the source region and a terminal corresponding to the source region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the source region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：通过纳米管开关元件控制源极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。漏极区域连接到相应的端子。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电源定位在源极区域和与源极区域对应的端子之间。纳米管开关元件在机电上可操作为打开和关闭状态之一，从而打开或关闭源极区域与其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

4. 发明授权

US08699268B2 Field effect devices controlled via a nanotube switching element 有权
标题翻译：通过纳米管开关元件控制的场效应器件
公开(公告)号：US08699268B2
公开(公告)日：2014-04-15
申请号：US11973035
申请日：2007-10-05
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/50 , G11C11/52
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的漏极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。源区域连接到相应的终端。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

5. 发明授权

US07948082B2 Method of fabricating a patterned nanoscopic article 有权
标题翻译：制造图案化纳米镜制品的方法
公开(公告)号：US07948082B2
公开(公告)日：2011-05-24
申请号：US12195675
申请日：2008-08-21
申请人： Brent M. Segal , Thomas Rueckes , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L23/48 , H01L21/302 , D01F9/12
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0023 , H01L2924/0002 , Y10S977/724 , Y10S977/762 , Y10S977/767 , Y10S977/856 , H01L2924/00
摘要： Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.
摘要翻译：公开了纳米线制品及其制造方法。导电制品包括沿着制品限定多个导电通路的多个接触接触的纳米线段。纳米线段可以是半导体纳米线，金属纳米线，纳米管，单壁碳纳米管，多壁碳纳米管或与纳米管缠结的纳米线。各个片段可以具有不同的长度，并且可以包括长度短于制品的长度的片段。捆扎材料可以被定位成接触多个纳米线段的一部分。捆扎材料可以被图案化以产生具有暴露纳米线织物的区域的开口的框架的形状。这种捆扎层也可以用于与纳米线织物的电接触，特别是用于电缝合以降低织物的整体阻力。

6. 发明授权

US07928523B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07928523B2
公开(公告)日：2011-04-19
申请号：US12512428
申请日：2009-07-30
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L29/82
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
摘要翻译：在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

7. 发明申请

US20110083319A1 METHODS OF MAKING NANOTUBE SWITCHES 有权
标题翻译：制备纳米管开关的方法
公开(公告)号：US20110083319A1
公开(公告)日：2011-04-14
申请号：US12953076
申请日：2010-11-23
申请人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
发明人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
IPC分类号： H01H11/00 , B82Y40/00
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.
摘要翻译：纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关。用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。开关耦合到保护电路和放电路径。纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。纳米管开关可以在芯片载体上。根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。可以在激活和去激活状态之间重复地编程ESD电路，以便重复激活和去激活受保护电路的ESD保护。纳米管开关基于输入焊盘上的信号幅度提供保护。

8. 发明授权

US07911831B2 Nanotube-on-gate FET structures and applications 有权
标题翻译：纳米管栅极FET结构和应用
公开(公告)号：US07911831B2
公开(公告)日：2011-03-22
申请号：US11939316
申请日：2007-11-13
申请人： Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G11C11/50
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , G11C2213/17 , H01L27/112 , H01L27/11233 , H01L27/115 , H01L27/11521 , H01L51/0048 , H01L51/0052
摘要： Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductive material; and an electromechanically-deflectable nanotube switching element in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region.
摘要翻译：在一个方面，非易失性晶体管器件包括源极和漏极之间的沟道; 由半导体或导电材料制成的栅极结构，设置在通道上方的绝缘体上; 由半导体或导电材料制成的控制门; 以及与栅极结构和控制栅极结构中的一个固定接触并且不与栅极结构和控制栅极结构中的另一个固定接触的机电偏转的纳米管开关元件。该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。

9. 发明申请

US20100073031A1 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS AND LOGIC CIRCUITS HAVING SAID ELEMENTS 有权
标题翻译：具有多个控制和基于元素的逻辑电路的基于纳米管的开关元件
公开(公告)号：US20100073031A1
公开(公告)日：2010-03-25
申请号：US12246013
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/02 , H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Boolean logic circuits comprising nanotube-based switching elements with multiple controls. The Boolean logic circuits include input and output terminals and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. Each switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel along the nanotube channel element. At least one nanotube switching element non-volatilely retains an informational state and at least one nanotube switching elements volatilely retains an informational state. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. Dual rail cascode logic circuits may also be constructed from the nanotube switching elements.
摘要翻译：包括具有多个控制的基于纳米管的开关元件的布尔逻辑电路。布尔逻辑电路包括输入和输出端子以及电气设置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。每个开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消沿着纳米管通道元件的导电通道。至少一个纳米管开关元件不挥发地保持信息状态，并且至少一个纳米管开关元件挥发性地保持信息状态。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。双轨共源共栅逻辑电路也可以由纳米管开关元件构成。

10. 发明授权

US07588960B2 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US07588960B2
公开(公告)日：2009-09-15
申请号：US11449969
申请日：2006-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L21/4763 , H01L41/00 , H01L51/40
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.
摘要翻译：纳米管器件结构和制造方法。制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

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