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1. 发明授权

US08357559B2 Method of making sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：使用非水平取向的纳米管元件制造传感器平台的方法
公开(公告)号：US08357559B2
公开(公告)日：2013-01-22
申请号：US12469402
申请日：2009-05-20
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L21/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：介绍传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

2. 发明授权

US08125039B2 One-time programmable, non-volatile field effect devices and methods of making same 失效
标题翻译：一次性可编程，非易失性场效应器件及其制作方法
公开(公告)号：US08125039B2
公开(公告)日：2012-02-28
申请号：US11651177
申请日：2007-01-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L29/84
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.
摘要翻译：一次性可编程，非易失性场效应器件及其制作方法。在一个实施例中，一次性可编程的非易失性场效应器件包括源极，漏极和栅极，源极和漏极之间具有场可调整通道。源极，漏极和栅极中的每一个具有相应的端子。电机械可偏转的纳米管开关元件电耦合到源极，漏极和栅极中的一个，并且具有可机电偏转的纳米管元件，其被定位成响应于电刺激而可偏转以在第二电极之间形成非易失性闭合电状态源，漏，门之一及其相应的终端。

3. 发明申请

US20100025659A1 NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME 有权
标题翻译：非挥发性电磁场效应装置及其使用方法及其形成方法
公开(公告)号：US20100025659A1
公开(公告)日：2010-02-04
申请号：US12512428
申请日：2009-07-30
申请人： CLAUDE L. BERTIN , THOMAS RUECKES , BRENT M. SEGAL , BERNHARD VOGELI , DARREN K. BROCK , VENKATACHALAM C. JAIPRAKASH
发明人： CLAUDE L. BERTIN , THOMAS RUECKES , BRENT M. SEGAL , BERNHARD VOGELI , DARREN K. BROCK , VENKATACHALAM C. JAIPRAKASH
IPC分类号： H01L29/06 , H01L21/20 , H01L21/311
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
摘要翻译：在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

4. 发明授权

US07569880B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07569880B2
公开(公告)日：2009-08-04
申请号：US11731946
申请日：2007-04-02
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L35/24 , H01L51/00 , H01L29/778
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
摘要翻译：在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

5. 发明授权

US07538400B2 Sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：传感器平台使用非水平取向的纳米管元件
公开(公告)号：US07538400B2
公开(公告)日：2009-05-26
申请号：US11333623
申请日：2006-01-17
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L49/00 , G01N27/02
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：描述传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

6. 发明授权

US07304357B2 Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有水平布置的纳米制品的装置及其制造方法
公开(公告)号：US07304357B2
公开(公告)日：2007-12-04
申请号：US11193795
申请日：2005-07-29
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.
摘要翻译：描述了具有水平布置的纳米制品的新器件及其制造方法。分立的机电装置包括具有导电迹线的结构。定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。低电阻信号路径与所定义的纳米片段电连通。在某些实施例中，该结构包括限定的导电迹线设置的间隙。限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。在某些实施例中，夹具设置在纳米管织物片段的两端中的每一个处，并且在纳米管织物片段的至少一部分上大致位于限定间隙的边缘处。在某些实施例中，夹具由导电材料制成。在某些实施方案中，纳米管贴片和迹线之间的接触是非挥发性状态。在某些实施方案中，纳米管贴片和迹线之间的接触是挥发性状态。在某些实施例中，至少一个导电迹线具有界面材料，以改变纳米管织物片段和导电迹线之间的吸引力。

7. 发明授权

US07259410B2 Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有水平布置的纳米制品的装置及其制造方法
公开(公告)号：US07259410B2
公开(公告)日：2007-08-21
申请号：US10776059
申请日：2004-02-11
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L27/10
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electromechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.
摘要翻译：描述了具有水平布置的纳米制品的新器件及其制造方法。分立的机电装置包括具有导电迹线的结构。定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。低电阻信号路径与所定义的纳米片段电连通。在某些实施例中，该结构包括限定的导电迹线设置的间隙。限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。在某些实施例中，夹具设置在纳米管织物片段的两端中的每一个处，并且在纳米管织物片段的至少一部分上大致位于限定间隙的边缘处。在某些实施例中，夹具由导电材料制成。在某些实施方案中，纳米管贴片和迹线之间的接触是非挥发性状态。在某些实施方案中，纳米管贴片和迹线之间的接触是挥发性状态。在某些实施例中，至少一个导电迹线具有界面材料，以改变纳米管织物片段和导电迹线之间的吸引力。

8. 发明授权

US07161218B2 One-time programmable, non-volatile field effect devices and methods of making same 失效
公开(公告)号：US07161218B2
公开(公告)日：2007-01-09
申请号：US10864572
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L29/96
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.

9. 发明授权

US07115901B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07115901B2
公开(公告)日：2006-10-03
申请号：US10864186
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L35/24 , H01L51/00 , H01L29/778
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.
摘要翻译：非易失性场效应器件和使用它的电路。非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。源极，漏极和栅极中的每一个都具有相应的端子。电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。源极，漏极和栅极中的其他物体直接连接到其相应的端子。纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。

10. 发明授权

US07112464B2 Devices having vertically-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有垂直布置的纳米制品的装置及其制造方法
公开(公告)号：US07112464B2
公开(公告)日：2006-09-26
申请号：US11158217
申请日：2005-06-21
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C13/0033 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/943
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
摘要翻译：描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。机电装置包括具有主要水平表面和形成在其中的通道的结构。通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。该物品在水平方向上可电导向导电迹线偏转。在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。在某些实施方案中，纳米管制品由多孔纳米纤维形成。在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。在某些实施例中，信道可以用于多个独立设备，或者可以用于共享公共电极的设备。

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