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1. 发明申请

US20050190509A1 Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip 有权
标题翻译：自锁式自旋阀传感器，具有应力改性层，用于降低幅度翻转的可能性
公开(公告)号：US20050190509A1
公开(公告)日：2005-09-01
申请号：US10788727
申请日：2004-02-27
申请人： Ciaran Fox , Hardayal Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Pinarbasi
发明人： Ciaran Fox , Hardayal Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/33 , G11B5/1272
摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
摘要翻译：自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。优选地，压应力改性层由钌（Ru）或其它合适的材料制成。

2. 发明申请

US20050128652A1 Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
标题翻译：自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性
公开(公告)号：US20050128652A1
公开(公告)日：2005-06-16
申请号：US10732200
申请日：2003-12-10
申请人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
发明人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译：在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。第一厚度略大于第二厚度。如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

3. 发明申请

US20070195468A1 Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
标题翻译：自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性
公开(公告)号：US20070195468A1
公开(公告)日：2007-08-23
申请号：US11301877
申请日：2005-12-13
申请人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
发明人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译：在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。第一厚度略大于第二厚度。如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

4. 发明申请

US20120318319A1 METHODS OF INTERCONNECTING THIN FILM SOLAR CELLS 审中-公开
标题翻译：互膜薄膜太阳能电池的方法
公开(公告)号：US20120318319A1
公开(公告)日：2012-12-20
申请号：US13253921
申请日：2011-10-05
申请人： Mustafa Pinarbasi , Burak Metin
发明人： Mustafa Pinarbasi , Burak Metin
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0201 , H01L31/0504 , Y02E10/50
摘要： A photovoltaic module comprises a first group of solar cells; a second group of solar cells; a first interconnection member extending across a first surface of the first group of solar cells and across a first surface of the second group of solar cells to connect the first and second groups of solar cells in parallel; and a second interconnection member extending across a second surface of the first group of solar cells and across a second surface of the second group of solar cells.
摘要翻译：光伏模块包括第一组太阳能电池; 第二组太阳能电池; 第一互连构件，其横跨第一组太阳能电池的第一表面延伸并穿过第二组太阳能电池的第一表面，以平行地连接第一和第二组太阳能电池; 以及横跨第一组太阳能电池的第二表面并跨越第二组太阳能电池的第二表面延伸的第二互连部件。

5. 发明授权

US08318530B2 Solar cell buffer layer having varying composition 失效
标题翻译：具有不同组成的太阳能电池缓冲层
公开(公告)号：US08318530B2
公开(公告)日：2012-11-27
申请号：US12843778
申请日：2010-07-26
申请人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
发明人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
IPC分类号： H01L21/00
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译：描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于一对一的滚动时尚。在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

6. 发明申请

US20120266958A1 METHODS OF FORMING RUTHENIUM-GROUP IIIA ALLOYS 审中-公开
标题翻译：形成钌IIIA族合金的方法
公开(公告)号：US20120266958A1
公开(公告)日：2012-10-25
申请号：US13457224
申请日：2012-04-26
申请人： Serdar Aksu , Sarah Lastella , Alan Kleiman-Shwarsctein , Shirish Pethe , Mustafa Pinarbasi
发明人： Serdar Aksu , Sarah Lastella , Alan Kleiman-Shwarsctein , Shirish Pethe , Mustafa Pinarbasi
IPC分类号： H01L31/18 , C22C5/04 , C22C30/00 , H01L31/0216
CPC分类号： C25D5/50 , C23C14/165 , C23C14/5806 , C23C14/5893 , C23C30/00 , C25D3/56 , C25D5/10 , C25D7/126 , H01L51/426 , H01L51/441 , Y02E10/549 , Y02P70/521
摘要： Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.
摘要翻译：描述了包括提供用于光伏器件的薄膜太阳能电池基底结构的装置，光伏器件的制造方法，制造薄膜太阳能电池基底结构的卷对卷方法以及钌合金片材的实施例。

7. 发明申请

US20110108099A1 METHOD OF FORMING TRANSPARENT ZINC OXIDE LAYERS FOR HIGH EFFICIENCY PHOTOVOLTAIC CELLS 审中-公开
标题翻译：形成用于高效光伏电池的透明氧化锌层的方法
公开(公告)号：US20110108099A1
公开(公告)日：2011-05-12
申请号：US12616578
申请日：2009-11-11
申请人： Mustafa Pinarbasi , James Freitag
发明人： Mustafa Pinarbasi , James Freitag
IPC分类号： H01L31/00 , H01L21/283
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm.
摘要翻译：提供了包括形成在CdS缓冲层上的高电阻率透明层的太阳能电池。高电阻率透明层包括形成在缓冲层上的本征氧化膜和形成在本征氧化膜上的中间氧化膜。本发明的氧化物膜包括未掺杂的氧化锌，其厚度范围为10〜40nm。中间氧化膜包括掺杂有铝的半固有氧化锌，其厚度范围为50-150nm。中间氧化膜的铝浓度小于1000ppm。

8. 发明申请

US20110039366A1 METHOD AND APPARATUS FOR DEPOSITION OF GRADED OR MULTI-LAYER TRANSPARENT FILMS 失效
标题翻译：沉积层或多层透明膜的方法和装置
公开(公告)号：US20110039366A1
公开(公告)日：2011-02-17
申请号：US12843778
申请日：2010-07-26
申请人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
发明人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
IPC分类号： H01L31/18 , H01L31/0264
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译：在一个实施例中，提供连续的无电沉积方法和通过其厚度形成具有变化的组成的太阳能电池缓冲层的系统。通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于一对一的滚动时尚。在另一个实施例中，包含第一透明导电膜（例如掺杂铝的氧化锌）和第二透明导电膜（例如氧化铟锡）的透明导电层以不同的组成沉积在缓冲层上。

9. 发明授权

US07837837B2 Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer and fabrication method therefor 有权
标题翻译：具有通过外延匹配种子层接种的高导电性铅结构的磁头及其制造方法
公开(公告)号：US07837837B2
公开(公告)日：2010-11-23
申请号：US11034351
申请日：2005-01-11
申请人： Michael Andrew Parker , Mustafa Pinarbasi , Robert Otto Schwenker
发明人： Michael Andrew Parker , Mustafa Pinarbasi , Robert Otto Schwenker
IPC分类号： C23C14/16
CPC分类号： B82Y25/00 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3967 , H01F10/32 , Y10T29/49025 , Y10T29/49032
摘要： The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW.
摘要翻译：本发明旨在增加磁头的读头部分中的引线材料的导电性，使得可以在保持导线的载流能力的同时制造更薄的电引线。通过在外延匹配的种子层上制造电引线，使得引线材料的结晶微结构具有更少的晶界，从而提高引线材料的导电性，从而实现电导线导电性的提高。在优选实施例中，电引线材料由具有FCC晶体结构的Rh组成，并且种子层由具有单位晶格恒定尺寸的具有BCC晶体结构的金属或金属合金构成，满足以下关系： abcc大约等于0.816afcc。在各种实施方案中，种子层由VMo或VW组成。

10. 发明申请

US20100147677A1 DRUM DESIGN FOR WEB PROCESSING 审中-公开
标题翻译：用于WEB处理的DRUM设计
公开(公告)号：US20100147677A1
公开(公告)日：2010-06-17
申请号：US12607689
申请日：2009-10-28
申请人： Mustafa Pinarbasi , Homayoun Talieh , Bulent M. Basol
发明人： Mustafa Pinarbasi , Homayoun Talieh , Bulent M. Basol
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： G06F3/1446 , B05D3/0493 , B05D2252/02 , C23C14/562 , G06F3/1438 , G09F9/30 , G09F9/301 , G09F9/33 , G09G3/2088 , G09G3/32 , G09G2300/026 , G09G2300/0452 , G09G2320/0626 , G09G2380/02 , G09G2380/06 , H01L31/03923 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece.
摘要翻译：提供了一种用于在工件上沉积材料的卷对卷系统。在一个实施例中，系统包括围绕横向于工艺方向的轴线旋转的滚筒和多个PVD沉积单元。滚筒还包括外围表面，该外围表面包括凹槽，凹槽具有凹入的工件接触表面，其平行于轴线并且设置在第一侧壁和第二侧壁之间。凹陷工件接触表面的一部分支撑工件的一部分，并且随着工件沿着工艺方向移动，第一和第二侧壁将工件的部分保持在凹入工件接触表面的部分上。 PVD沉积单元跨越外围表面的一些部分设置，并且将材料连续地沉积在工件的一些部分的宽度上。

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