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1. 发明申请

US20120266958A1 METHODS OF FORMING RUTHENIUM-GROUP IIIA ALLOYS 审中-公开
标题翻译：形成钌IIIA族合金的方法
公开(公告)号：US20120266958A1
公开(公告)日：2012-10-25
申请号：US13457224
申请日：2012-04-26
申请人： Serdar Aksu , Sarah Lastella , Alan Kleiman-Shwarsctein , Shirish Pethe , Mustafa Pinarbasi
发明人： Serdar Aksu , Sarah Lastella , Alan Kleiman-Shwarsctein , Shirish Pethe , Mustafa Pinarbasi
IPC分类号： H01L31/18 , C22C5/04 , C22C30/00 , H01L31/0216
CPC分类号： C25D5/50 , C23C14/165 , C23C14/5806 , C23C14/5893 , C23C30/00 , C25D3/56 , C25D5/10 , C25D7/126 , H01L51/426 , H01L51/441 , Y02E10/549 , Y02P70/521
摘要： Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.
摘要翻译：描述了包括提供用于光伏器件的薄膜太阳能电池基底结构的装置，光伏器件的制造方法，制造薄膜太阳能电池基底结构的卷对卷方法以及钌合金片材的实施例。

2. 发明申请

US20120214293A1 ELECTRODEPOSITING DOPED CIGS THIN FILMS FOR PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：用于光伏器件的电沉积CIGS薄膜
公开(公告)号：US20120214293A1
公开(公告)日：2012-08-23
申请号：US13153310
申请日：2011-06-03
申请人： Serdar Aksu , Sarah Lastella , Mustafa Pinarbasi
发明人： Serdar Aksu , Sarah Lastella , Mustafa Pinarbasi
IPC分类号： H01L21/368 , C25D3/56
CPC分类号： C25D3/56 , C25D3/54 , C25D5/48 , C25D5/50 , C25D7/126 , H01L31/0322 , H01L31/03923 , H01L31/0749 , Y02E10/541
摘要： Aspects of the present inventions include an electrodeposition solution for deposition of a thin film that includes a Group VA material, a method of electroplating to deposit a thin film that includes a Group VA material, among others.
摘要翻译：本发明的方面包括用于沉积包括VA族材料的薄膜的电沉积溶液，电镀沉积包含第VA族材料的薄膜的方法等。

3. 发明申请

US20120309125A1 BUFFER LAYER DEPOSITION METHODS FOR GROUP IBIIIAVIA THIN FILM SOLAR CELLS 审中-公开
标题翻译： IBIIIAVIA薄膜太阳能电池的缓冲层沉积方法
公开(公告)号：US20120309125A1
公开(公告)日：2012-12-06
申请号：US13154273
申请日：2011-06-06
申请人： Serdar Aksu , Sarah Lastella , Mustafa Pinarbasi
发明人： Serdar Aksu , Sarah Lastella , Mustafa Pinarbasi
IPC分类号： H01L31/18
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： The present invention provides methods for forming a buffer layer for Group IBIIIAVIA solar cells. The buffer layer is formed using chemical bath deposition and the layer is formed in steps. A first buffer layer is formed on the absorber and the first buffer layer is then treated using etching, oxidizing, annealing or some combination thereof. Subsequently a second buffer layer is then positioned on the treated surface. Additional buffer layers can be added following treatment of the previously deposited layer.
摘要翻译：本发明提供了用于形成IBIIIAVIA族太阳能电池的缓冲层的方法。使用化学浴沉积形成缓冲层，并且步骤形成该层。在吸收体上形成第一缓冲层，然后使用蚀刻，氧化，退火或其一些组合处理第一缓冲层。随后，将第二缓冲层定位在经处理的表面上。可以在先前沉积的层的处理之后添加附加的缓冲层。

4. 发明申请

US20110136293A1 REACTION METHODS TO FORM GROUP IBIIIAVIA THIN FILM SOLAR CELL ABSORBERS 有权
标题翻译：形成IBIIIAVIA薄膜太阳能电池吸收器的反应方法
公开(公告)号：US20110136293A1
公开(公告)日：2011-06-09
申请号：US12632617
申请日：2009-12-07
申请人： Serdar Aksu , Yuriy Matus , Rasmi Das , Mustafa Pinarbasi
发明人： Serdar Aksu , Yuriy Matus , Rasmi Das , Mustafa Pinarbasi
IPC分类号： H01L31/032
CPC分类号： H01L31/0322 , H01L21/02425 , H01L21/02491 , H01L21/02568 , H01L21/02573 , H01L21/02614 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium and selenium; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.
摘要翻译：本发明提供了一种在连续柔性基底上形成IBIIIAVIA族太阳能电池吸收层的方法。在优选的方面，该方法通过提供具有在衬底上形成的前体层的工件来形成用于制造光伏电池的IBIIIAVIA族吸收层，所述前体层包括铜，铟，镓和硒; 将前体层加热至第一温度; 使所述前体层在所述第一温度下反应第一预定时间以将所述前体层转化为部分形成的吸收体结构; 将部分形成的吸收体结构冷却至第二温度，其中第一温度和第二温度均高于400℃。以及使所述部分形成的吸收体结构在所述第二温度下比第一预定时间长的第二预定时间，以形成IBIIIAVIA族吸收层。

5. 发明申请

US20100140101A1 ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS 失效
标题翻译：用于沉积含薄膜的铜箔的电镀方法和化学
公开(公告)号：US20100140101A1
公开(公告)日：2010-06-10
申请号：US12642702
申请日：2009-12-18
申请人： Serdar Aksu , Mustafa Pinarbasi
发明人： Serdar Aksu , Mustafa Pinarbasi
IPC分类号： C25D7/12
CPC分类号： C25D3/58 , C25D3/38 , C25D3/54 , C25D5/10
摘要： The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.
摘要翻译：本发明提供一种形成太阳能电池吸收层的方法和前体结构。该方法包括电沉积包括至少包括铜的第一膜的膜堆叠的第一层，包含铟的第二膜和包含镓的第三膜，其中第一层包括第一量的铜，将第二层电沉积到第一层上所述第二层包括第二铜铟镓镓三元合金膜，铜铟二元合金膜，铜镓二元合金膜和铜 - 硒二元合金膜中的至少一种，其中所述第二层包括第二量的铜，其高于第一量的铜，并且将第三层电沉积到第二层上，第三层包括硒; 并使前体叠层反应在基底上形成吸收层。

6. 发明申请

US20090203165A1 METHOD TO IMPROVE FLEXIBLE FOIL SUBSTRATE FOR THIN FILM SOLAR CELL APPLICATIONS 失效
标题翻译：用于改善薄膜太阳能电池应用的柔性基底的方法
公开(公告)号：US20090203165A1
公开(公告)日：2009-08-13
申请号：US12233563
申请日：2008-09-18
申请人： Mustafa Pinarbasi , Serdar Aksu , Bulent M. Basol
发明人： Mustafa Pinarbasi , Serdar Aksu , Bulent M. Basol
IPC分类号： H01L31/0272 , H01L31/032
CPC分类号： H01L31/022425 , C25D3/56 , C25D5/50 , H01L31/0322 , H01L31/03928 , Y02E10/541 , Y02P70/521
摘要： A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.
摘要翻译：提供一种薄膜太阳能电池，其包括在包括不锈钢基底的无缺陷基底上的IBIIIAVIA族吸收层。对基体的不锈钢基材进行表面处理以去除表面粗糙度，例如引起分流的凸起。在移除突起之前，首先将薄的保护性钌膜沉积在基底的凹入表面部分上，以在随后的突起移除期间保护这些部分。在沉积过程中，表面上的突起很少或没有钌。在形成钌膜之后，通过蚀刻剂蚀刻并除去突起，蚀刻剂仅侵蚀不锈钢，但对钌膜是中性的。在钌层和基板的暴露部分之上形成接触层以完成基底。

7. 发明授权

US08153469B2 Reaction methods to form group IBIIIAVIA thin film solar cell absorbers 有权
标题翻译：形成IBIIIAVIA薄膜太阳能电池吸收体的反应方法
公开(公告)号：US08153469B2
公开(公告)日：2012-04-10
申请号：US12632617
申请日：2009-12-07
申请人： Serdar Aksu , Yuriy Matus , Rasmi Das , Mustafa Pinarbasi
发明人： Serdar Aksu , Yuriy Matus , Rasmi Das , Mustafa Pinarbasi
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L21/02425 , H01L21/02491 , H01L21/02568 , H01L21/02573 , H01L21/02614 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium and selenium; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.
摘要翻译：本发明提供了一种在连续柔性基底上形成IBIIIAVIA族太阳能电池吸收层的方法。在优选的方面，该方法通过提供具有在衬底上形成的前体层的工件来形成用于制造光伏电池的IBIIIAVIA族吸收层，所述前体层包括铜，铟，镓和硒; 将前体层加热至第一温度; 使所述前体层在所述第一温度下反应第一预定时间以将所述前体层转化为部分形成的吸收体结构; 将部分形成的吸收体结构冷却至第二温度，其中第一温度和第二温度均高于400℃。以及使所述部分形成的吸收体结构在所述第二温度下比第一预定时间长的第二预定时间，以形成IBIIIAVIA族吸收层。

8. 发明授权

US08409418B2 Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers 失效
标题翻译： IBIIIAVIA薄膜太阳能电池吸收体的电镀化学成分和制备方法
公开(公告)号：US08409418B2
公开(公告)日：2013-04-02
申请号：US12642709
申请日：2009-12-18
申请人： Serdar Aksu , Jiaxiong Wang , Mustafa Pinarbasi
发明人： Serdar Aksu , Jiaxiong Wang , Mustafa Pinarbasi
IPC分类号： C25D5/10 , C25D5/48 , C25D5/50
CPC分类号： C25D3/58 , C25D3/56 , C25D5/10
摘要： The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.
摘要翻译：本发明提供一种形成IBIIIAIVA族太阳能电池吸收层的方法和前体结构。该方法包括通过电沉积三种不同的膜在基底上形成前体层，然后使前体层与硒反应，在基底上形成IBIIIAVIA族化合物层，从而在基底上形成IBIIIAVIA族化合物层。由前体层描述的三个膜在一个实施方案中包括包含铜，铟和镓的第一合金膜，在第一合金膜上形成的包含铜和硒的第二合金膜; 以及形成在第二合金膜上的硒膜。

9. 发明授权

US08404512B1 Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers 失效
标题翻译：制备IBIIIAVIA薄膜太阳能吸收器的结晶方法
公开(公告)号：US08404512B1
公开(公告)日：2013-03-26
申请号：US13041285
申请日：2011-03-04
申请人： Serdar Aksu , Mustafa Pinarbasi
发明人： Serdar Aksu , Mustafa Pinarbasi
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L31/0323 , H01L31/03928 , Y02E10/541
摘要： The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.
摘要翻译：本发明提供了形成用于太阳能电池的掺杂IBIIIAVIA族吸收层的方法。该方法包括形成包括掺杂剂富含层的前体层，然后退火前体层。退火过程导致掺杂剂通过层扩散到外表面。定期停止退火处理以从暴露表面去除掺杂剂。

10. 发明申请

US20120003786A1 ELECTROPLATING METHODS AND CHEMISTRIES FOR CIGS PRECURSOR STACKS WITH CONDUCTIVE SELENIDE BOTTOM LAYER 审中-公开
标题翻译：电镀方法和CIGS前驱体层与导电性底层底层的化学
公开(公告)号：US20120003786A1
公开(公告)日：2012-01-05
申请号：US13184377
申请日：2011-07-15
申请人： Serdar Aksu , Mustafa Pinarbasi
发明人： Serdar Aksu , Mustafa Pinarbasi
IPC分类号： H01L31/18
CPC分类号： C25D3/58 , C25D3/38 , C25D3/54 , C25D5/10 , C25D5/50 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , Y02E10/541
摘要： The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes forming a CIGS solar cell absorber on a base by depositing a first layer on the base, where in the first layer includes non-crystalline copper-selenide that is electrically nonconductive, and then heat treating the first layer at a first temperature range to transform the non-crystalline copper-selenide into a crystalline copper-selenide that is electrically conductive, thereby ensuring that the first layer becomes a first conductive layer. Thereafter, other steps follow to complete formation of the CIGS solar cell absorber.
摘要翻译：本发明提供一种形成太阳能电池吸收层的方法和前体结构。该方法包括通过在基底上沉积第一层而在基底上形成CIGS太阳能电池吸收体，其中第一层包括不导电的非结晶性硒化铜，然后在第一温度范围内对第一层进行热处理将非结晶硒化铜转变成导电的结晶铜 - 硒化物，从而确保第一层变成第一导电层。此后，完成CIGS太阳能电池吸收器的形成之后的其它步骤。

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