专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050190509A1 Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip 有权
标题翻译：自锁式自旋阀传感器，具有应力改性层，用于降低幅度翻转的可能性
公开(公告)号：US20050190509A1
公开(公告)日：2005-09-01
申请号：US10788727
申请日：2004-02-27
申请人： Ciaran Fox , Hardayal Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Pinarbasi
发明人： Ciaran Fox , Hardayal Gill , Prakash Kasiraj , Wen-Yaung Lee , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/33 , G11B5/1272
摘要： A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
摘要翻译：自固定型的自旋阀（SV）传感器包括一个或多个压缩应力修改层，用于降低钉扎场将翻转其方向的可能性。自旋阀传感器包括形成在自旋阀结构上的覆盖层，其包括自由层，反平行（AP）自固定层结构以及位于自由层和AP自固位层结构之间的间隔层。在封盖层的上方或下方形成压应力改性层，邻近AP自固化层结构或两者。优选地，压应力改性层由钌（Ru）或其它合适的材料制成。

2. 发明申请

US20050128652A1 Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
标题翻译：自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性
公开(公告)号：US20050128652A1
公开(公告)日：2005-06-16
申请号：US10732200
申请日：2003-12-10
申请人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
发明人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译：在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。第一厚度略大于第二厚度。如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

3. 发明申请

US20070195468A1 Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
标题翻译：自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性
公开(公告)号：US20070195468A1
公开(公告)日：2007-08-23
申请号：US11301877
申请日：2005-12-13
申请人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
发明人： James Freitag , Hardayal Gill , Jih-Shiuan Luo , Mustafa Pinarbasi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/33 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.
摘要翻译：在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。第一厚度略大于第二厚度。如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

4. 发明申请

US20070230068A1 Dual-type tunneling magnetoresistance (TMR) elements 失效
标题翻译：双路隧道磁阻（TMR）元件
公开(公告)号：US20070230068A1
公开(公告)日：2007-10-04
申请号：US11395301
申请日：2006-03-31
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B2005/0018 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F41/302
摘要： Dual-type tunneling magnetoresistance (TMR) elements and associated methods of fabrication are disclosed that allow for higher bias voltages. In one embodiment, the dual-type TMR element includes a lower pinned layer structure, a lower tunnel barrier layer, a ferromagnetic free layer structure, an upper tunnel barrier layer, and an upper pinned layer structure. The lower pinned layer structure has a first Fermi level, while the upper pinned layer structure has a second Fermi level that is different than the first Fermi level of the lower pinned layer structure. By having different Fermi levels, the bias voltage induced in the TMR element may advantageously be increased without a significant reduction in TMR.
摘要翻译：公开了双型隧道磁阻（TMR）元件和相关的制造方法，其允许更高的偏置电压。在一个实施例中，双型TMR元件包括下钉扎层结构，下隧道势垒层，铁磁自由层结构，上隧道阻挡层和上钉扎层结构。下钉扎层结构具有第一费米能级，而上钉扎层结构具有与下钉扎层结构的第一费米能级不同的第二费米能级。通过具有不同的费米能级，可以有利地增加TMR元件中感应的偏置电压，而不会明显降低TMR。

5. 发明申请

US20070064352A1 Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material 失效
标题翻译：具有由永磁材料形成的钉扎层的磁阻（MR）元件
公开(公告)号：US20070064352A1
公开(公告)日：2007-03-22
申请号：US11230184
申请日：2005-09-19
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , H01F10/16 , H01F10/3263 , H01F10/3281 , H01F10/3295
摘要： Magnetoresistive (MR) elements having pinning layers formed from a permanent magnetic material are disclosed. An MR element of the invention includes a first pinning layer, a first pinned layer, a first spacer/barrier layer, a free layer, a second spacer/barrier layer, a second pinned layer, and a second pinning layer. One of the first pinning layer or the second pinning layer is formed from a permanent magnetic material, such as CoPt or CoPtCr. The other of the first pinning layer or the second pinning layer is formed from an antiferromagnetic (AFM) material, such as IrMn or PtMn.
摘要翻译：公开了具有由永久磁性材料形成的钉扎层的磁阻（MR）元件。本发明的MR元件包括第一钉扎层，第一钉扎层，第一间隔物/阻挡层，自由层，第二间隔物/阻挡层，第二钉扎层和第二钉扎层。第一钉扎层或第二钉扎层中的一个由诸如CoPt或CoPtCr的永久磁性材料形成。第一钉扎层或第二钉扎层中的另一个由反铁磁（AFM）材料形成，例如IrMn或PtMn。

6. 发明申请

US20070019342A1 Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning 失效
标题翻译：磁阻传感器具有堆叠偏压结构，具有NiFeCr间隔层，用于改善偏压层钉扎
公开(公告)号：US20070019342A1
公开(公告)日：2007-01-25
申请号：US11187564
申请日：2005-07-22
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having an in stack bias structure for biasing the magnetic moment of the free layer. The in stack bias structure includes a magnetic bias layer that may include a layer of NiFe and a layer of CoFe. A layer of antiferromagnetic material (AFM layer) is exchange coupled with the bias layer. Preferably, the NiFe layer of the bias layer is located adjacent to the AFM layer. A non-magnetic spacer layer is sandwiched between the free layer and the bias layer. The spacer layer comprises NiFeCr and is of such a thickness that magnetostatic coupling between the free layer and the bias layer across the spacer layer biases the magnetic moment of the free layer in a direction antiparallel to the magnetic moment of the bias layer. The NiFeCr promotes a desired crystalline growth in the bias layer that causes excellent exchange coupling between the bias layer and the AFM layer.
摘要翻译：一种磁阻传感器，具有用于偏置自由层的磁矩的堆叠偏压结构。堆叠偏压结构包括可以包括NiFe层和CoFe层的磁偏置层。一层反铁磁材料（AFM层）与偏置层交换耦合。优选地，偏置层的NiFe层位于AFM层附近。非磁性间隔层被夹在自由层和偏置层之间。间隔层包括NiFeCr，并且具有这样的厚度，使得自由层与隔离层之间的偏置层之间的静磁耦合在与偏置层的磁矩反平行的方向上偏置自由层的磁矩。 NiFeCr促进偏置层中的期望的晶体生长，导致偏置层和AFM层之间的优异的交换耦合。

7. 发明申请

US20060221512A1 Sensitivity GMR sensors 失效
标题翻译：灵敏度GMR传感器
公开(公告)号：US20060221512A1
公开(公告)日：2006-10-05
申请号：US11095803
申请日：2005-03-31
申请人： Hardayal Gill , Neil Smith
发明人： Hardayal Gill , Neil Smith
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F10/3295
摘要： Improved sensitivity GMR sensors useful for thin film magnetic read heads are disclosed. Spin transfer induced destabilization of the magnetic free layer is suppressed through the application of Tb containing alloys in the free layer. Sense currents can be increased by a factor of five in comparison to prior art designs without an increase in spin transfer induced noise.
摘要翻译：公开了用于薄膜磁读头的改进的灵敏度GMR传感器。通过在自由层中施加含Tb的合金来抑制磁自由层的自旋转移诱导的不稳定性。与现有技术设计相比，感测电流可以增加五倍，而不增加自旋转移引起的噪声。

8. 发明申请

US20060176621A1 Magnetoresistive sensor with free layer bias adjustment capability 失效
标题翻译：具有自由层偏置调节功能的磁阻传感器
公开(公告)号：US20060176621A1
公开(公告)日：2006-08-10
申请号：US11052968
申请日：2005-02-07
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39
摘要： A magnetoresistive sensor having a free layer biased by an in stack bias layer that has a magnetic moment canted with respect to the ABS, such that the magnetic moment of the biasing layer has a longitudinal component in a direction parallel with the ABS and a component in a transverse direction that is perpendicular to the ABS. The transverse component of the bias layer moment creates a balancing field in the free layer that counterbalances the coupling field in the free layer generated by the pinned layer. The counterbalance field provided by the canted moment of the biasing layer is especially useful in a tunnel valve sensor, because the very thin barrier layer of the tunnel valve design generates a strong coupling field in the free layer and this coupling field cannot be offset by a field from the sensor current.
摘要翻译：一种磁阻传感器，其具有由堆叠偏置层偏置的自由层，其具有相对于ABS倾斜的磁矩，使得偏置层的磁矩在与ABS平行的方向上具有纵向分量，垂直于ABS的横向。偏置层矩的横向分量在自由层中产生平衡场，其平衡由被钉扎层产生的自由层中的耦合场。由于偏移层的倾斜力矩提供的平衡场在隧道阀传感器中特别有用，因为隧道阀设计的非常薄的阻挡层在自由层中产生强耦合场，并且该耦合场不能被场从传感器电流。

9. 发明申请

US20060039092A1 CPP GMR/TMR structure providing higher dR 失效
标题翻译： CPP GMR / TMR结构提供更高的dR
公开(公告)号：US20060039092A1
公开(公告)日：2006-02-23
申请号：US10924101
申请日：2004-08-23
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909
摘要： A current perpendicular to plane (CPP) sensor having FeN in their free and pinned layers. A tunnel junction sensor (TMR) according to the present invention can have a MgO barrier layer, and a CPP GMR sensor according to the present invention can have a Cr spacer layer.
摘要翻译：垂直于平面（CPP）传感器的电流在其自由和固定层中具有FeN。根据本发明的隧道结传感器（TMR）可以具有MgO阻挡层，根据本发明的CPP GMR传感器可以具有Cr间隔层。

10. 发明申请

US20060002033A1 Larger dR CPP GMR structure 失效
公开(公告)号：US20060002033A1
公开(公告)日：2006-01-05
申请号：US10867521
申请日：2004-06-14
申请人： Hardayal Gill
发明人： Hardayal Gill
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , G11B5/3945
摘要： A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having two dual spin valves sharing a common self pinned pinned layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式