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1. 发明授权

US07289661B2 Apparatus and method for inspecting a substrate 有权
标题翻译：用于检查基板的装置和方法
公开(公告)号：US07289661B2
公开(公告)日：2007-10-30
申请号：US10661633
申请日：2003-09-15
申请人： Chung-Sam Jun , Sun-Yong Choi , Kwang-Soo Kim , Joo-Woo Kim , Jeong-Hyun Choi , Dong-Jin Park
发明人： Chung-Sam Jun , Sun-Yong Choi , Kwang-Soo Kim , Joo-Woo Kim , Jeong-Hyun Choi , Dong-Jin Park
IPC分类号： G06K9/00
CPC分类号： H01L21/67253 , G01N21/9503 , G01N21/95607 , G01N2021/0162 , G01N2021/0187 , G01N2021/1736 , G01N2021/1772 , G01N2021/8411 , G01N2021/8896 , G01N2021/95615 , G01N2201/103 , G01N2201/1087
摘要： An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.
摘要翻译：用于执行EBR / EEW检查的自动化和一体化的基板检查装置，对基板的图案和掩模版错误检查的缺陷检查包括用于支撑基板的第一阶段; 第一图像获取单元，用于获取由所述第一平台支撑的所述基板的周边部分的第一图像; 用于支撑衬底的第二阶段; 第二图像获取单元，用于获取由第二平台支撑的基板的第二图像; 用于在第一阶段和第二阶段之间转移衬底的传送机器人; 以及数据处理单元，连接到第一图像获取单元和第二图像获取单元，用于检查使用第一图像在基板上执行的边缘珠去除处理和边缘曝光处理的结果，并且用于检查图案的缺陷使用第二图像在基板上形成。

2. 发明授权

US06815236B2 Method of measuring a concentration of a material and method of measuring a concentration of a dopant of a semiconductor device 失效
公开(公告)号：US06815236B2
公开(公告)日：2004-11-09
申请号：US10694882
申请日：2003-10-29
申请人： Tae-Kyoung Kim , Sun-Yong Choi , Chung-Sam Jun , Kwang-Soo Kim , Koung-Su Shin , Jeong-Hyun Choi , Dong-Chun Lee
发明人： Tae-Kyoung Kim , Sun-Yong Choi , Chung-Sam Jun , Kwang-Soo Kim , Koung-Su Shin , Jeong-Hyun Choi , Dong-Chun Lee
IPC分类号： H01L2166
CPC分类号： G01N21/3563 , G01N21/8422
摘要： A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

3. 发明授权

US07046760B2 Method of measuring and controlling concentration of dopants of a thin film 失效
标题翻译：测量和控制薄膜掺杂剂浓度的方法
公开(公告)号：US07046760B2
公开(公告)日：2006-05-16
申请号：US10789445
申请日：2004-03-01
申请人： Tae-Kyoung Kim , Sun-Yong Choi , Chung-Sam Jun , Jeong-Hyun Choi
发明人： Tae-Kyoung Kim , Sun-Yong Choi , Chung-Sam Jun , Jeong-Hyun Choi
IPC分类号： G01N23/223 , H01L21/66
CPC分类号： H01L22/14 , H01L21/32155
摘要： A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.
摘要翻译：测量目标薄膜的掺杂剂浓度的方法包括测量第一晶片的掺杂剂的浓度，在第一晶片上形成目标薄膜以形成第二晶片，测量第二晶片的掺杂剂的浓度，以及通过从第二晶片的掺杂剂的浓度减去第一晶片的掺杂剂的浓度来获得目标薄膜的掺杂剂的浓度。因此，可以在不使用标准晶片的情况下测量目标薄膜的掺杂剂的浓度，从而减少测量时间。此外，可以容易地控制目标薄膜的掺杂剂的浓度，因此如果需要，可以及时校正。

4. 发明申请

US20050134867A1 Systems and methods for measuring distance of semiconductor patterns 有权
标题翻译：测量半导体图形距离的系统和方法
公开(公告)号：US20050134867A1
公开(公告)日：2005-06-23
申请号：US11012005
申请日：2004-12-13
申请人： Koung-Su Shin , Kwang-Jun Yoon , Sun-Yong Choi , Chung-Sam Jun , Dong-Jin Park
发明人： Koung-Su Shin , Kwang-Jun Yoon , Sun-Yong Choi , Chung-Sam Jun , Dong-Jin Park
IPC分类号： H01L21/66 , G03F7/20 , G01B11/14
CPC分类号： G03F7/70616
摘要： A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.
摘要翻译：提供了测量半导体图形的距离的系统和方法。该系统包括显微镜和控制单元。控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离第一个和第二个实际坐标。使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。

5. 发明授权

US07274471B2 Systems and methods for measuring distance of semiconductor patterns 有权
标题翻译：测量半导体图形距离的系统和方法
公开(公告)号：US07274471B2
公开(公告)日：2007-09-25
申请号：US11012005
申请日：2004-12-13
申请人： Koung-Su Shin , Kwang-Jun Yoon , Sun-Yong Choi , Chung-Sam Jun , Dong-Jin Park
发明人： Koung-Su Shin , Kwang-Jun Yoon , Sun-Yong Choi , Chung-Sam Jun , Dong-Jin Park
IPC分类号： G01B11/14
CPC分类号： G03F7/70616
摘要： A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.
摘要翻译：提供了测量半导体图形的距离的系统和方法。该系统包括显微镜和控制单元。控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离第一个和第二个实际坐标。使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。

6. 发明授权

US07271890B2 Method and apparatus for inspecting defects 失效
标题翻译：检查缺陷的方法和装置
公开(公告)号：US07271890B2
公开(公告)日：2007-09-18
申请号：US10903852
申请日：2004-07-30
申请人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/55
摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.
摘要翻译：在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。获得多个区域中的每一个的反射率。使用反射率确定每个区域的放大率。光照射到这些区域上。从第一区域反射的光被第一区域确定的第一放大率放大。检测到将照射的光从第一区域移动到第二区域。从第二区域反射的光被第二区域确定的第二放大率放大。分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

7. 发明申请

US20050083539A1 Apparatus and method for measuring a thickness of a substrate 失效
标题翻译：用于测量衬底厚度的装置和方法
公开(公告)号：US20050083539A1
公开(公告)日：2005-04-21
申请号：US10912559
申请日：2004-08-06
申请人： Hwan-Shik Park , Sun-Yong Choi , Chung-Sam Jun , Kye-Weon Kim
发明人： Hwan-Shik Park , Sun-Yong Choi , Chung-Sam Jun , Kye-Weon Kim
IPC分类号： G01B11/06 , G01B11/28
CPC分类号： G01B11/06
摘要： An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.
摘要翻译：一种测量衬底厚度的装置和方法。第一光从具有已知厚度的标准样品反射。光通过光聚焦透镜集中。通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。操作单元分别从第一和第二电信号确定第一和第二峰值。操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。

8. 发明授权

US06869215B2 Method and apparatus for detecting contaminants in ion-implanted wafer 失效
标题翻译：用于检测离子注入晶片中的污染物的方法和装置
公开(公告)号：US06869215B2
公开(公告)日：2005-03-22
申请号：US10447104
申请日：2003-05-29
申请人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung Sam Jun , Kwan-Woo Ryu , Park-Song Kim , Tae-Min Eom
发明人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung Sam Jun , Kwan-Woo Ryu , Park-Song Kim , Tae-Min Eom
IPC分类号： H01L21/66 , G01N25/72 , G01K11/00
CPC分类号： G01N25/72
摘要： A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.
摘要翻译：一种用于通过加热或充电或两者退火和激活离子注入晶片并测量从活化晶片产生的热波吸收来检测离子注入晶片中的污染物的方法和装置。

9. 发明授权

US07573568B2 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US07573568B2
公开(公告)日：2009-08-11
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

10. 发明授权

US07405817B2 Method and apparatus for classifying defects of an object 有权
标题翻译：用于分类物体缺陷的方法和装置
公开(公告)号：US07405817B2
公开(公告)日：2008-07-29
申请号：US10786137
申请日：2004-02-26
申请人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
发明人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/956 , G01N21/9501
摘要： A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.
摘要翻译：用于对物体的缺陷进行分类的方法包括将具有不同极化的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类通过分析散射光。用于对物体的缺陷进行分类的装置包括发光装置，其发射具有不同偏振度的光以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光根据位于物体检查点的缺陷进行分析和分类。

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