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1. 发明授权

US06544802B1 Wafer inspection system and method for selectively inspecting conductive pattern defects 有权
标题翻译：晶圆检查系统和选择性检查导电图案缺陷的方法
公开(公告)号：US06544802B1
公开(公告)日：2003-04-08
申请号：US09685094
申请日：2000-10-11
申请人： Chung-sam Jun , Pil-sik Hyun
发明人： Chung-sam Jun , Pil-sik Hyun
IPC分类号： H01L2100
CPC分类号： H01L21/67288 , G01R31/311
摘要： Wafer inspection system and method which are suitable for inspection of highly integrated semiconductor devices. The wafer inspection system includes an apparatus for selectively inspecting conductive pattern defects, which includes a sensor for scanning the surface of a wafer in a noncontact manner and an RLC circuit which is connected to the sensor and converts a signal obtained from the sensor into an electrical characteristic; and an image processing computer which is connected to the apparatus for selectively inspecting conductive pattern defects. Only conductive defects are selectively extracted, thereby increasing inspection efficiency.
摘要翻译：适用于高度集成半导体器件检查的晶圆检查系统和方法。晶片检查系统包括用于选择性地检查导电图案缺陷的装置，其包括用于以非接触方式扫描晶片表面的传感器和连接到传感器的RLC电路，并将从传感器获得的信号转换为电特性; 以及图像处理计算机，其连接到用于选择性地检查导电图案缺陷的装置。仅选择性地提取导电缺陷，从而提高检查效率。

2. 发明授权

US06449037B2 Method of and device for detecting micro-scratches 有权
标题翻译：检测微划痕的方法和装置
公开(公告)号：US06449037B2
公开(公告)日：2002-09-10
申请号：US09864398
申请日：2001-05-25
申请人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyung-suk Cho , Pil-sik Hyun , Kyu-hong Lim , Byung-am Lee
发明人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyung-suk Cho , Pil-sik Hyun , Kyu-hong Lim , Byung-am Lee
IPC分类号： G01N2100
CPC分类号： G01N21/21
摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.
摘要翻译：方法和装置检测在晶片表面存在缺陷，即微划痕。光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。电信号对应于从晶片表面反射的光的强度。当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

3. 发明授权

US07405817B2 Method and apparatus for classifying defects of an object 有权
标题翻译：用于分类物体缺陷的方法和装置
公开(公告)号：US07405817B2
公开(公告)日：2008-07-29
申请号：US10786137
申请日：2004-02-26
申请人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
发明人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/956 , G01N21/9501
摘要： A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.
摘要翻译：用于对物体的缺陷进行分类的方法包括将具有不同极化的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类通过分析散射光。用于对物体的缺陷进行分类的装置包括发光装置，其发射具有不同偏振度的光以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光根据位于物体检查点的缺陷进行分析和分类。

4. 发明授权

US06912056B2 Apparatus and method for measuring each thickness of a multilayer stacked on a substrate 失效
标题翻译：用于测量层叠在基板上的多层厚度的装置和方法
公开(公告)号：US06912056B2
公开(公告)日：2005-06-28
申请号：US10914149
申请日：2004-08-10
申请人： Pil-Sik Hyun , Sun-Jin Kang , Sang-Kil Lee , Kyung-Ho Jung
发明人： Pil-Sik Hyun , Sun-Jin Kang , Sang-Kil Lee , Kyung-Ho Jung
IPC分类号： G01B11/06 , H01L21/66 , G01B11/28
CPC分类号： G01B11/0641
摘要： In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.
摘要翻译：在测量基板上的多层厚度的装置和方法中，测量从基板反射的反射光的光谱。存储多个与多个假想多层中的一个对应的食谱数据。多个假想多层中的一个最初被假设为实际形成在基底上的多层。根据多个假想多层之一的各种理论厚度，使用多个配方数据中的一个来计算多个理论光谱。将测量的光谱与多个理论光谱进行比较，以确定多层的临时厚度。估计多层的临时厚度的可靠性。当临时厚度的可靠性在允许范围内时，临时厚度作为衬底上的多层的厚度输出。

5. 发明申请

US20050041255A1 Apparatus and method for measuring each thickness of a multilayer stacked on a substrate 失效
公开(公告)号：US20050041255A1
公开(公告)日：2005-02-24
申请号：US10914149
申请日：2004-08-10
申请人： Pil-Sik Hyun , Sun-Jin Kang , Sang-Kil Lee , Kyung-Ho Jung
发明人： Pil-Sik Hyun , Sun-Jin Kang , Sang-Kil Lee , Kyung-Ho Jung
IPC分类号： G01B11/06 , H01L21/66 , G01B9/02
CPC分类号： G01B11/0641
摘要： In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.

6. 发明申请

US20050018182A1 Method and apparatus for classifying defects of an object 有权
标题翻译：用于分类物体缺陷的方法和装置
公开(公告)号：US20050018182A1
公开(公告)日：2005-01-27
申请号：US10786137
申请日：2004-02-26
申请人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
发明人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
IPC分类号： H01L21/66 , G01N21/95 , G01N21/00
CPC分类号： G01N21/956 , G01N21/9501
摘要： A method for classifying defects of an object includes irradiating lights having different wavelengths onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different wavelengths to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.
摘要翻译：用于对物体的缺陷进行分类的方法包括将不同波长的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类通过分析散射光。用于对物体的缺陷进行分类的装置包括：发光装置，其发射具有不同波长的光，以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光根据位于物体检查点的缺陷进行分析和分类。

7. 发明授权

US06528333B1 Method of and device for detecting micro-scratches 有权
公开(公告)号：US06528333B1
公开(公告)日：2003-03-04
申请号：US09584671
申请日：2000-06-01
申请人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyung-suk Cho , Pil-sik Hyun , Kyu-hong Lim , Byung-am Lee
发明人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyung-suk Cho , Pil-sik Hyun , Kyu-hong Lim , Byung-am Lee
IPC分类号： H01L2166
CPC分类号： G01N21/21
摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

8. 发明授权

US06515293B1 Method and apparatus for detecting thickness of thin layer formed on a wafer 有权
标题翻译：用于检测在晶片上形成的薄层厚度的方法和装置
公开(公告)号：US06515293B1
公开(公告)日：2003-02-04
申请号：US09671207
申请日：2000-09-28
申请人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyun-suk Cho , Pil-sik Hyun
发明人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyun-suk Cho , Pil-sik Hyun
IPC分类号： G01N2186
CPC分类号： H01L22/26 , G01B11/0625 , H01L22/12
摘要： A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.
摘要翻译：测量薄层厚度的方法，通过该厚度可以实时检测在晶片表面上形成的顶层的厚度及其装置。该方法包括将光照射到电池上并从反射光获得亮度，检测与电池相邻的氧化物部位中的薄层的厚度，重复照射和检测步骤，从而形成多个亮度值所述晶片和与所述单元相邻的氧化物部位中的薄层的多个厚度值，并且使用使用所述多个亮度值和在先前获得的多个厚度值来计算顶层的厚度的厚度计算公式脚步。从单元反射的光的亮度直接检测薄层的厚度，从而可以以非破坏性的方式精确地检测薄层的厚度，从而使得可以实时地检测薄层的厚度制造半导体器件。

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