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1. 发明授权

US06881996B2 Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer 有权
标题翻译：金属绝缘体金属（MIM）电容器结构在铜CMOS电路中使用焊盘保护层
公开(公告)号：US06881996B2
公开(公告)日：2005-04-19
申请号：US10935376
申请日：2004-09-07
申请人： Chun-Hon Chen , Ssu-Pin Ma , Ta-Hsun Yeh , Yen-Shih Ho , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou
发明人： Chun-Hon Chen , Ssu-Pin Ma , Ta-Hsun Yeh , Yen-Shih Ho , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou
IPC分类号： H01L21/02 , H01L21/8238 , H01L21/8242 , H01L23/522 , H01L27/08 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A metal-insulator-metal (MIM) capacitor structure and method of fabrication for CMOS circuits having copper interconnections are described. The method provides metal capacitors with high figure of merit Q (Xc/R) and which does not require additional masks and metal layers. The method forms a copper capacitor bottom metal (CBM) electrode while concurrently forming the pad contacts and level of copper interconnections by the damascene process. An insulating (Si3N4) metal protect layer is formed on the copper and a capacitor interelectrode dielectric layer is formed. A metal protecting buffer is used to protect the thin interelectrode layer, and openings are etched to pad contacts and interconnecting lines. A TiN/AlCu/TiN metal layer is deposited and patterned to form the capacitor top metal (CTM) electrodes, the next level of interconnections, and to provide a pad protect layer on the copper pad contacts. The thick TiN/AlCu/TiN CTM electrode reduces the capacitor series resistance and improves the capacitor figure of merit Q, while the pad protect layer protects the copper from corrosion.
摘要翻译：描述了具有铜互连的CMOS电路的金属绝缘体金属（MIM）电容器结构和制造方法。该方法提供具有高品质因数Q（X / C / R）的金属电容器，并且不需要额外的掩模和金属层。该方法形成铜电容器底部金属（CBM）电极，同时通过镶嵌工艺形成焊盘触点和铜互连水平。在铜上形成绝缘（Si 3 N 4 N 4）金属保护层，形成电容器电极间电介质层。使用金属保护缓冲器来保护薄的电极间层，并且蚀刻开口以焊接触点和互连线。沉积并图案化TiN / AlCu / TiN金属层以形成电容器顶部金属（CTM）电极，下一级互连，并在铜焊盘触点上提供焊盘保护层。厚TiN / AlCu / TiN CTM电极降低了电容器串联电阻，提高了电容器的品质因数Q，而焊盘保护层保护铜免受腐蚀。

2. 发明授权

US06472721B2 Dual damascene interconnect structures that include radio frequency capacitors and inductors 有权
标题翻译：双镶嵌互连结构，包括射频电容器和电感器
公开(公告)号：US06472721B2
公开(公告)日：2002-10-29
申请号：US09963749
申请日：2001-09-27
申请人： Ssu-Pin Ma , Chun-Hon Chen , Ta-Hsun Yeh , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou , Yen-Shih Ho
发明人： Ssu-Pin Ma , Chun-Hon Chen , Ta-Hsun Yeh , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou , Yen-Shih Ho
IPC分类号： H01L2943
CPC分类号： H01L28/40 , H01L21/3212 , H01L21/76838 , H01L28/56 , H01L28/60 , H01L28/90
摘要： In many mixed-signal or radio frequency Rf applications, inductors and capacitors are needed at the same time. For a high performance inductor devices, a thick metal layer is needed to increase performance, usually requiring an extra masking process. The present invention describes both a structure and method of fabricating both copper metal-insulator-metal (MIM) capacitors and thick metal inductors, simultaneously, with only one mask, for high frequency mixed-signal or Rf, CMOS applications, in a damascene and dual damascene trench/via process. High performance device structures formed by this invention include: parallel plate capacitor bottom metal (CBM) electrodes and capacitor top metal (CTM) electrodes, metal-insulator-metal (MIM) capacitors, thick inductor metal wiring, interconnects and contact vias.
摘要翻译：在许多混合信号或射频Rf应用中，同时需要电感器和电容器。对于高性能电感器件，需要厚金属层来提高性能，通常需要额外的掩模工艺。本发明同时描述了铜金属 - 绝缘体 - 金属（MIM）电容器和厚金属电感器的结构和方法，同时仅使用一个掩模用于大马士革中的高频混合信号或Rf，CMOS应用，双镶嵌沟/通孔工艺。本发明形成的高性能器件结构包括：平行电容器底部金属（CBM）电极和电容器顶部金属（CTM）电极，金属 - 绝缘体 - 金属（MIM）电容器，厚电感器金属布线，互连和接触通孔。

3. 发明授权

US06329234B1 Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow 有权
标题翻译：铜工艺兼容CMOS金属 - 绝缘体 - 金属电容器结构及其工艺流程
公开(公告)号：US06329234B1
公开(公告)日：2001-12-11
申请号：US09624026
申请日：2000-07-24
申请人： Ssu-Pin Ma , Chun-Hon Chen , Ta-Hsun Yeh , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou , Yen-Shih Ho
发明人： Ssu-Pin Ma , Chun-Hon Chen , Ta-Hsun Yeh , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou , Yen-Shih Ho
IPC分类号： H01L218238
CPC分类号： H01L28/40 , H01L21/3212 , H01L21/76838 , H01L28/56 , H01L28/60 , H01L28/90
摘要： In many mixed-signal or radio frequency Rf applications, inductors and capacitors are needed at the same time. For a high performance inductor devices, a thick metal layer is needed to increase performance, usually requiring an extra masking process. The present invention describes both a structure and method of fabricating both copper metal-insulator-metal (MIM) capacitors and thick metal inductors, simultaneously, with only one mask, for high frequency mixed-signal or Rf, CMOS applications, in a damascene and dual damascene trench/via process. High performance device structures formed by this invention include: parallel plate capacitor bottom metal (CBM) electrodes and capacitor top metal (CTM) electrodes, metal-insulator-metal (MIM) capacitors, thick inductor metal wiring, interconnects and contact vias.
摘要翻译：在许多混合信号或射频Rf应用中，同时需要电感器和电容器。对于高性能电感器件，需要厚金属层来提高性能，通常需要额外的掩模工艺。本发明同时描述了铜金属 - 绝缘体 - 金属（MIM）电容器和厚金属电感器的结构和方法，同时仅使用一个掩模用于大马士革中的高频混合信号或Rf，CMOS应用，双镶嵌沟/通孔工艺。本发明形成的高性能器件结构包括：平行电容器底部金属（CBM）电极和电容器顶部金属（CTM）电极，金属 - 绝缘体 - 金属（MIM）电容器，厚电感器金属布线，互连和接触通孔。

4. 发明申请

US20050029566A1 Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer 有权
标题翻译：使用焊盘保护层在铜CMOS电路中制造新的金属 - 绝缘体 - 金属（MIM）电容器结构的方法
公开(公告)号：US20050029566A1
公开(公告)日：2005-02-10
申请号：US10935376
申请日：2004-09-07
申请人： Chun-Hon Chen , Ssu-Pin Ma , Ta-Hsun Yeh , Yen-Shih Ho , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou
发明人： Chun-Hon Chen , Ssu-Pin Ma , Ta-Hsun Yeh , Yen-Shih Ho , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou
IPC分类号： H01L21/02 , H01L21/8238 , H01L21/8242 , H01L23/522 , H01L27/08 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： A metal-insulator-metal (MIM) capacitor structure and method of fabrication for CMOS circuits having copper interconnections are described. The method provides metal capacitors with high figure of merit Q (Xc/R) and which does not require additional masks and metal layers. The method forms a copper capacitor bottom metal (CBM) electrode while concurrently forming the pad contacts and level of copper interconnections by the damascene process. An insulating (Si3N4) metal protect layer is formed on the copper and a capacitor interelectrode dielectric layer is formed. A metal protecting buffer is used to protect the thin interelectrode layer, and openings are etched to pad contacts and interconnecting lines. A TiN/AlCu/TiN metal layer is deposited and patterned to form the capacitor top metal (CTM) electrodes, the next level of interconnections, and to provide a pad protect layer on the copper pad contacts. The thick TiN/AlCu/TiN CTM electrode reduces the capacitor series resistance and improves the capacitor figure of merit Q, while the pad protect layer protects the copper from corrosion.
摘要翻译：描述了具有铜互连的CMOS电路的金属绝缘体金属（MIM）电容器结构和制造方法。该方法提供具有高品质因数Q（Xc / R）的金属电容器，并且不需要额外的掩模和金属层。该方法形成铜电容器底部金属（CBM）电极，同时通过镶嵌工艺形成焊盘触点和铜互连水平。在铜上形成绝缘（Si3N4）金属保护层，形成电容器电极间电介质层。使用金属保护缓冲器来保护薄的电极间层，并且蚀刻开口以焊接触点和互连线。沉积并图案化TiN / AlCu / TiN金属层以形成电容器顶部金属（CTM）电极，下一级互连，并在铜焊盘触点上提供焊盘保护层。厚TiN / AlCu / TiN CTM电极降低了电容器串联电阻，提高了电容器的品质因数Q，而焊盘保护层保护铜免受腐蚀。

5. 发明授权

US06812088B1 Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer 失效
标题翻译：使用焊盘保护层在铜CMOS电路中制造新的金属 - 绝缘体 - 金属（MIM）电容器结构的方法
公开(公告)号：US06812088B1
公开(公告)日：2004-11-02
申请号：US10167856
申请日：2002-06-11
申请人： Chun-Hon Chen , Ssu-Pin Ma , Ta-Hsun Yeh , Yen-Shih Ho , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou
发明人： Chun-Hon Chen , Ssu-Pin Ma , Ta-Hsun Yeh , Yen-Shih Ho , Kuo-Reay Peng , Heng-Ming Hsu , Kong-Beng Thei , Chi-Wu Chou
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： This MIM structure provides metal capacitors with high figure of merit Q (Xc/R) and does not require additional masks and metal layers. A copper capacitor bottom metal (CBM) electrode is formed, while concurrently forming the pad contacts and level of copper interconnections by the damascene process. An insulating (Si3N4) metal protect layer is formed on the copper and a capacitor interelectrode dielectric layer is formed. A metal protecting buffer protects the thin interelectrode layer, and openings are etched to pad contacts and interconnecting lines. A TiN/AlCu/TiN metal layer is deposited and patterned to form the capacitor top metal (CTM) electrodes, the next level of interconnections, and to provide a pad protect layer on the copper pad contacts. The thick TiN/AlCu/TiN CTM electrode reduces the capacitor series resistance and improves the capacitor figure of merit Q, while the pad protect layer protects the copper from corrosion.
摘要翻译：该MIM结构提供具有高品质因数Q（Xc / R）的金属电容器，并且不需要额外的掩模和金属层。形成铜电容器底部金属（CBM）电极，同时通过镶嵌工艺同时形成焊盘触点和铜互连水平。在铜上形成绝缘（Si3N4）金属保护层，形成电容器电极间电介质层。金属保护缓冲器保护薄的电极间层，并且蚀刻开口以焊接触点和互连线。沉积并图案化TiN / AlCu / TiN金属层以形成电容器顶部金属（CTM）电极，下一级互连，并在铜焊盘触点上提供焊盘保护层。厚TiN / AlCu / TiN CTM电极降低了电容器串联电阻，提高了电容器的品质因数Q，而焊盘保护层保护铜免受腐蚀。

6. 发明授权

US06667217B1 Method of fabricating a damascene copper inductor structure using a sub-0.18 um CMOS process 有权
标题翻译：使用亚0.18μmCMOS工艺制造镶嵌铜电感器结构的方法
公开(公告)号：US06667217B1
公开(公告)日：2003-12-23
申请号：US09795115
申请日：2001-03-01
申请人： Heng-Ming Hsu , Jau-Yuann Chung , Yen-Shih Ho , Chun-Hon Chen , Kuo-Reay Peng , Ta-Hsun Yeh , Kong-Beng Thei , Ssu-Pin Ma
发明人： Heng-Ming Hsu , Jau-Yuann Chung , Yen-Shih Ho , Chun-Hon Chen , Kuo-Reay Peng , Ta-Hsun Yeh , Kong-Beng Thei , Ssu-Pin Ma
IPC分类号： H01L2120
CPC分类号： H01L28/10 , H01F17/0006 , H01F41/042 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A process for integrating the fabrication of a thick, copper inductor structure, with the fabrication of narrow channel length CMOS devices, has been developed. The integrated process features the use of only one additional photolithographic masking step, used to form the opening in an IMD layer, that will accommodate the subsequent inductor structure. After forming damascene type openings in the same IMD layer, in the CMOS region, copper is deposited and then defined, to result in a thick, copper inductor structure, in the opening in the IMD layer, in a first region of a semiconductor substrate, as well as to result in copper interconnect structures, in the damascene type openings located in a second region of the semiconductor structure, used for the narrow channel length CMOS devices. The use of a thick, copper inductor structure, equal to the thickness of the IMD layer, results in increased inductance, or an increased quality factor, when compared to counterparts formed with thinner metal inductors.
摘要翻译：已经开发了将厚铜电感器结构的制造与窄沟道长度CMOS器件的制造相结合的工艺。集成过程的特征在于仅使用一个额外的光刻掩模步骤，用于在IMD层中形成开口，其将适应随后的电感器结构。在相同的IMD层中形成镶嵌型开口之后，在CMOS区域中，沉积铜，然后限定铜，以在半导体衬底的第一区域中的IMD层的开口中产生厚的铜电感器结构，以及在半导体结构的第二区域中的镶嵌型开口中产生用于窄沟道长度CMOS器件的铜互连结构。与使用较薄的金属电感器形成的对应物相比，使用等于IMD层的厚度的厚铜电感器结构导致增加的电感或增加的品质因数。

7. 发明授权

US06444517B1 High Q inductor with Cu damascene via/trench etching simultaneous module 有权
标题翻译：高Q电感与Cu镶嵌通孔/沟槽蚀刻同时模块
公开(公告)号：US06444517B1
公开(公告)日：2002-09-03
申请号：US10055091
申请日：2002-01-23
申请人： Heng-Ming Hsu , Shyh-Chyi Wong , Chaochieh Tsai , Ssu-Pin Ma , Chao-Cheng Chen , Liang-Kun Huang
发明人： Heng-Ming Hsu , Shyh-Chyi Wong , Chaochieh Tsai , Ssu-Pin Ma , Chao-Cheng Chen , Liang-Kun Huang
IPC分类号： H01L218244
CPC分类号： H01L28/10 , H01F17/0006 , H01F41/041 , H01L21/76838 , H01L27/08
摘要： A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is created overlying the first layer of metal. The first layer of metal combined with the second layer of metal form an inductor of increased height, reducing the resistivity of the inductor, increasing the Q value of the inductor. The new method of creating an inductor can be combined with creating contact points that connect to contact points in the active region of the surface of a semiconductor substrate.
摘要翻译：提供了一种用于在半导体衬底的表面上产生电感的新方法。在电介质层中产生第一金属层，产生覆盖在第一金属层上的第二金属层。第一层金属与第二层金属组合形成一个增加高度的电感器，降低了电感的电阻率，增加了电感的Q值。创建电感器的新方法可以与产生连接到半导体衬底的表面的有源区域中的接触点的接触点组合。

8. 发明申请

US20080174398A1 Planar spiral inductor structure having enhanced Q value 有权
标题翻译：具有增强的Q值的平面螺旋电感器结构
公开(公告)号：US20080174398A1
公开(公告)日：2008-07-24
申请号：US12079059
申请日：2008-03-24
申请人： Heng-Ming Hsu , Yen-Shih Ho
发明人： Heng-Ming Hsu , Yen-Shih Ho
IPC分类号： H01F5/00 , H01F27/28
CPC分类号： H01L23/5227 , H01F17/0006 , H01F41/041 , H01F2017/0046 , H01L2924/0002 , Y10T29/4902 , Y10T29/49062 , Y10T29/49073 , H01L2924/00
摘要： Within a method for fabricating an inductor structure there is first provided a substrate. There is then formed over the substrate a planar spiral conductor layer to form a planar spiral inductor, wherein a successive series of spirals within the planar spiral conductor layer is formed with a variation in at least one of: (1) a series of linewidths of the successive series of spirals; and (2) a series of spacings of the successive series of spirals. The method contemplates a planar spiral inductor structure fabricated in accord with the method. A planar spiral inductor structure fabricated in accord with the method is characterized by an enhanced Q value of the planar spiral inductor structure.
摘要翻译：在制造电感器结构的方法中，首先提供衬底。然后在基板上形成平面螺旋导体层以形成平面螺旋形电感器，其中平面螺旋导体层内的连续的一系列螺旋形成为以下至少之一的变化：（1）一系列线宽连续的一系列螺旋; 和（2）连续的螺旋系列的一系列间距。该方法考虑了根据该方法制造的平面螺旋电感器结构。根据该方法制造的平面螺旋电感器结构的特征在于平面螺旋电感器结构的增强的Q值。

9. 发明授权

US07542009B2 Wireless communication device and signal receiving/transmitting method thereof 有权
标题翻译：无线通信装置及其信号接收/发送方法
公开(公告)号：US07542009B2
公开(公告)日：2009-06-02
申请号：US11681969
申请日：2007-03-05
申请人： Heng-Ming Hsu , Kuo-Hsun Huang
发明人： Heng-Ming Hsu , Kuo-Hsun Huang
IPC分类号： H01Q1/36 , H01Q3/24
CPC分类号： H01Q1/2291 , H01Q1/36 , H01Q9/145
摘要： A wireless communication device using a single spiral inductor antenna and a signal receiving/transmitting method thereof operated on multi-band are provided. The single spiral inductor antenna is designed to have a plurality of different inductance paths. Different inductance values are inducted with signal paths switched by a plurality of switches so as to meet the requirements of multi-band operation. As the circuit structure of the single spiral inductor antenna is used, the circuit area is reduced effectively.
摘要翻译：提供了使用单螺旋电感天线的无线通信装置及其在多频带上操作的信号接收/发送方法。单螺旋电感天线被设计成具有多个不同的电感路径。由多个开关切换的信号路径引入不同的电感值，以满足多频带操作的要求。由于采用单螺旋电感天线的电路结构，电路面积有效降低。

10. 发明申请

US20050171958A9 Method and system for implementing policies, resources and privileges for using services in LDAP 有权
标题翻译：实现LDAP中使用服务的策略，资源和权限的方法和系统
公开(公告)号：US20050171958A9
公开(公告)日：2005-08-04
申请号：US10118885
申请日：2002-04-08
申请人： Qingwen Cheng , Heng-Ming Hsu , Rajesh Arcot , James Nelson , Sai Allavarpu
发明人： Qingwen Cheng , Heng-Ming Hsu , Rajesh Arcot , James Nelson , Sai Allavarpu
IPC分类号： H04L12/24 , G06F17/00
CPC分类号： H04L41/0893 , H04L41/5061 , Y10S707/99931 , Y10S707/99939 , Y10S707/99943
摘要： The present invention is directed to the application of the Class of Service (CoS) feature in a directory server. The CoS feature allows user entries in a directory to be associated to service templates for multiple registered services in the directory. Once a service is registered, a CoS definition (service definition) may be created for that service under the organization entry. Once a service gets activated, an associated CoS template (service template) may be created for that service using its service definition. The template entries contain a list of shared attribute values and changes to these values get automatically applied to all the entries sharing the attribute. By creating these service definitions and templates under an organization entry, all the service privileges can be made available to all entries under the organization. Similarly, policies for resources can be defined for an organization and policy specific attributes can be made applicable to all the entries in the organization. By applying COS to roles and organizations to implement privileges for services and policies for resources, a solution with simplifies managing entries in the directories is provided. As a result, there are reduced storage requirements as well as greater flexibility and scalability of a directory server.
摘要翻译：本发明涉及在目录服务器中应用服务等级（CoS）特征。 CoS功能允许目录中的用户条目与目录中多个注册服务的服务模板相关联。注册服务后，可以为该服务在组织条目下创建CoS定义（服务定义）。一旦服务被激活，可以使用其服务定义为该服务创建相关联的CoS模板（服务模板）。模板条目包含共享属性值的列表，并且对这些值的更改将自动应用于共享该属性的所有条目。通过在组织条目下创建这些服务定义和模板，可以将所有服务权限提供给组织下的所有条目。类似地，可以为组织定义资源策略，并且可以使特定于策略的属性适用于组织中的所有条目。通过将COS应用于角色和组织以实现资源的服务和策略的权限，提供了简化管理目录中条目的解决方案。因此，减少了存储要求以及目录服务器的更大的灵活性和可扩展性。

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