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1. 发明授权

US4675711A Low temperature tunneling transistor 失效
标题翻译：低温隧道晶体管
公开(公告)号：US4675711A
公开(公告)日：1987-06-23
申请号：US798653
申请日：1985-11-15
申请人： Christoph S. Harder , Hans P. Wolf , Werner Baechtold , Pierre L. Gueret , Alexis Baratoff
发明人： Christoph S. Harder , Hans P. Wolf , Werner Baechtold , Pierre L. Gueret , Alexis Baratoff
IPC分类号： H01L29/80 , H01L29/20 , H01L29/205 , H01L29/772 , H01L29/78 , H01L29/12 , H01L29/66
CPC分类号： H01L29/772
摘要： The transistor comprises two electrodes, (source (22) and drain (23), with a semiconductor tunnel channel (21A, 21B) arranged therebetween. A gate (24) for applying control signals is coupled to the channel. The semiconductor channel consists of a plurality of regions differing in their current transfer characteristics: contact regions (21c), connected to the source and drain electrodes, and a tunneling region (21t) arranged between the contact regions. The energy of free carriers in the contact regions differs from the energy of the conduction band or the valence band of the tunneling region which forms a low energy tunnel barrier the height (.DELTA.E) of which can be modified by control signals applied to the gate. The operating temperature of the device is kept sufficiently low to have the tunnel current through the barrier outweigh currents of thermionically excited carriers.
摘要翻译：晶体管包括两个电极（源极（22）和漏极（23）），其间布置有半导体隧道通道（21A，21B），用于施加控制信号的栅极（24）耦合到沟道，半导体通道由其电流传递特性不同的多个区域：连接到源极和漏极的接触区域（21c）和布置在接触区域之间的隧道区域（21t），接触区域中的自由载流子的能量不同于形成低能隧道势垒的隧穿区的导带或价带的能量可以通过施加到栅极的控制信号来修改其高度（DELTA E），器件的工作温度保持足够低到隧道电流通过阻挡层超过热激发载流子的电流。

2. 发明授权

US4711858A Method of fabricating a self-aligned metal-semiconductor FET having an insulator spacer 失效
标题翻译：制造具有绝缘体间隔物的自对准金属 - 半导体FET的方法
公开(公告)号：US4711858A
公开(公告)日：1987-12-08
申请号：US875835
申请日：1986-06-18
申请人： Christoph S. Harder , Heinz Jaeckel , Hans P. Wolf
发明人： Christoph S. Harder , Heinz Jaeckel , Hans P. Wolf
IPC分类号： H01L21/338 , H01L29/08 , H01L29/812 , H01L21/302
CPC分类号： H01L29/0891 , H01L29/812 , Y10S438/969
摘要： A method for the fabrication of self-aligned MESFET structures with a recessed refractory submicron gate. After channel formation on a semi-insulating (SI) substrate, which may consist of a III-V compound semiconductor such as GaAs, with subsequent annealing, refractory gate material is deposited and patterned. This is followed by the overgrowth of a highly doped contact layer of, e.g., GaAs, using MOCVD of MBE processes resulting in poly-crystalline material over the gate "mask" and mono-crystalline material on exposed semiconductor surfaces. Next, the poly-crystalline material is removed in a selective etch process, this step being followed by the deposition of source and drain electrodes. In order to further improve process reliability, insulating sidewalls are provided at the vertical edges of the gate to avoid source-gate and drain-gate shorts.
摘要翻译：用于制造具有凹陷难熔亚微米门的自对准MESFET结构的方法。在半绝缘（SI）衬底上形成通道之后，其可以由诸如GaAs的III-V化合物半导体组成，随后进行退火，沉积并图案化耐火栅极材料。这之后是使用MBE工艺的MOCVD，在栅极“掩模”上的多晶体材料和暴露的半导体表面上的单晶材料的例如GaAs的高掺杂接触层的过度生长。接下来，在选择性蚀刻工艺中去除多晶材料，该步骤之后是源极和漏极的沉积。为了进一步提高工艺可靠性，在栅极的垂直边缘处提供绝缘侧壁，以避免源栅极和漏极 - 栅极短路。

3. 发明授权

US4717943A Charge storage structure for nonvolatile memories 失效
标题翻译：非易失性存储器的电荷存储结构
公开(公告)号：US4717943A
公开(公告)日：1988-01-05
申请号：US884671
申请日：1986-07-16
申请人： Hans P. Wolf , Donald R. Young
发明人： Hans P. Wolf , Donald R. Young
IPC分类号： H01L29/51 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/12 , H01L29/14
CPC分类号： H01L29/792 , H01L29/511 , H01L29/7882
摘要： A four layer charge storage structure comprising alternate layers of silicon-rich silicon dioxide and silicon dioxide with electrode layers on top and bottom. The upper and middle silicon-rich layers act as enhanced Fowler-Nordheim injectors and the middle silicon-rich layer also stores charges since the silicon particles act as deep traps. The charge storage structure is applicable to nonvolatile memories.
摘要翻译：四层电荷存储结构，其包括富含硅的二氧化硅和二氧化硅的交替层，其顶部和底部具有电极层。上部和中部富硅层作为增强型Fowler-Nordheim注射器，中间富硅层还存储电荷，因为硅颗粒充当深阱。电荷存储结构可应用于非易失性存储器。

4. 发明授权

US4662719A Liquid crystal display and method for production 失效
标题翻译：液晶显示及生产方法
公开(公告)号：US4662719A
公开(公告)日：1987-05-05
申请号：US649092
申请日：1984-09-10
申请人： Donelli J. Di Maria , Hans P. Wolf
发明人： Donelli J. Di Maria , Hans P. Wolf
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1365 , G09F9/35 , H01L29/861 , G02F1/133
CPC分类号： G02F1/1365
摘要： A matrix addressable liquid crystal display includes a thin film circuit supported on a substrate having a plurality of parallel bit lines. A plurality of individual pixel circuits each include a two terminal bi-directional gate device which is formed from at least one thin film layer with one gate device terminal connected with the associated bit line. A terminal plate is connected in circuit with the other terminal of the gate device. A transparent cover plate is spaced above the thin film circuit with a transparent conductor structure on the underside of the cover plate.The space beneath the cover plate is filled with a liquid crystal display material to form individual display pixel circuits at the terminal plates. A plurality of parallel word lines are arranged orthogonally to, and insulated from, the bit lines. The word lines are connected in circuit with the individual display pixel circuits at the respective cross-overs with the bit lines.The pixel circuits are each operable to change the state of the associated portion of the liquid crystal display material in response to the concurrent application of voltage pulses of opposite polarities to the associated word and bit lines.
摘要翻译：矩阵可寻址液晶显示器包括支撑在具有多个并行位线的基板上的薄膜电路。多个单独的像素电路各自包括由至少一个薄膜层形成的两端双向栅极器件，其中一个栅极器件端子与相关联的位线连接。端子板与门装置的另一端子电路连接。透明盖板在薄膜电路的上方与盖板下侧的透明导体结构隔开。盖板下面的空间填充有液晶显示材料，以在端子板上形成单独的显示像素电路。多个平行字线布置成与位线正交并与其绝缘。字线与各位显示像素电路以与位线相交叉的方式与电路连接。像素电路各自可操作以响应于向相关联的字和位线同时施加相反极性的电压脉冲而改变液晶显示材料的相关部分的状态。

5. 发明授权

US5401714A Field-effect device with a superconducting channel 失效
标题翻译：具超导通道的场效应装置
公开(公告)号：US5401714A
公开(公告)日：1995-03-28
申请号：US238184
申请日：1994-05-04
申请人： Preveen Chaudhari , Carl A. Mueller , Hans P. Wolf
发明人： Preveen Chaudhari , Carl A. Mueller , Hans P. Wolf
IPC分类号： H01L39/22 , H01L39/14 , H01L39/00
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/78 , Y10S505/873
摘要： A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).
摘要翻译：场效应结构形成在衬底上并且包括具有源极和漏极的沟道以及通过绝缘层与沟道分离的栅极。通道由高Tc金属氧化物超导体（例如YBaCuO）制成，其载流子密度约为1021 / cm3，相关长度约为0.2nm。通道厚度优选为1nm左右。超导体优选为单晶并且取向为使得在平行于衬底的平面中超导行为最强。利用施加到栅极的几伏的信号，整个沟道横截面耗尽电荷载流子，从而可以在“零电阻”（未剥离，超导）状态和“非常高电阻”（耗尽）之间切换沟道电阻州）。

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