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1. 发明申请

US20120249009A1 High speed light emitting semiconductor methods and devices 审中-公开
标题翻译：高速发光半导体的方法和装置
公开(公告)号：US20120249009A1
公开(公告)日：2012-10-04
申请号：US13506626
申请日：2012-05-03
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, JR. , Han Wui Then , Chao-Hsin Wu
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, JR. , Han Wui Then , Chao-Hsin Wu
IPC分类号： H05B37/00 , H01L33/62 , H01L33/60
CPC分类号： H01S5/06203 , B82Y20/00 , H01L33/0016 , H01L33/30 , H01L33/38 , H01S5/06213 , H01S5/183 , H01S5/1835 , H01S5/34313
摘要： A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.
摘要翻译：一种方法，包括：提供晶体管结构，所述晶体管结构包括在半导体发射极和第二半导体类型的集电极区之间的第一半导体类型的基极区; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量的电信号，以在量子尺寸区域辅助下产生从基极区域输出的自发光发射，包括高频的输出自发光发射光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

2. 发明授权

US07998807B2 Method for increasing the speed of a light emitting biopolar transistor device 有权
标题翻译：提高发光生物极性晶体管器件速度的方法
公开(公告)号：US07998807B2
公开(公告)日：2011-08-16
申请号：US10861320
申请日：2004-06-04
申请人： Milton Feng , Nick Holonyak, Jr.
发明人： Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01L21/8249
CPC分类号： H01L33/0016 , H01L29/0821 , H01L29/1004 , H01L29/155 , H01L29/205 , H01L29/66242 , H01L29/7371 , H01L33/08
摘要： A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
摘要翻译：一种提高双极晶体管速度的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且使基极区域适应于增强受激发射而不利于自发发射，从而降低基区的载流子复合寿命。

3. 发明申请

US20100202483A1 Two terminal light emitting and lasing devices and methods 有权
标题翻译：两端发光和激光装置及方法
公开(公告)号：US20100202483A1
公开(公告)日：2010-08-12
申请号：US12655806
申请日：2010-01-07
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, JR.
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, JR.
IPC分类号： H01S5/34 , H01L29/06
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
摘要翻译：一种用于从半导体结构产生发光的方法，包括以下步骤：提供半导体结构，其包括在第一导电类型的发射极区域和与第一导电类型的发射极区域相反的第二导电类型的基极区域之间的第一半导体结导电类型和在基极区域和漏极区域之间的第二半导体结; 在基区内提供显示量子尺寸效应的区域; 提供与发射极区域耦合的发射极; 提供与所述基极区域和所述漏极区域耦合的基极/漏极电极; 并且相对于发射极和基极/漏极施加信号以获得来自半导体结构的发光。

4. 发明申请

US20100085995A1 Transistor laser devices and methods 有权
标题翻译：晶体管激光器件及方法
公开(公告)号：US20100085995A1
公开(公告)日：2010-04-08
申请号：US12384772
申请日：2009-04-08
申请人： Milton Feng , Nick Holonyak,, JR. , Gabriel Walter , Han Wui Then
发明人： Milton Feng , Nick Holonyak,, JR. , Gabriel Walter , Han Wui Then
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
摘要翻译：一种用于从半导体器件产生发光的方法包括以下步骤：提供设置在半导体发射极区域和形成邻近基极区域的隧道结的半导体集电极区域之间的半导体基极区域; 在碱性区域中提供显示量子尺寸效应的区域; 提供分别与发射极区域，基极区域和集电极区域耦合的发射极端子，基极端子和集电极端子; 并且相对于发射极端子，基极端子和集电极端子施加电信号以产生从基极区域发出的光。

5. 发明授权

US08509274B2 Light emitting and lasing semiconductor methods and devices 有权
标题翻译：发光和发光半导体的方法和装置
公开(公告)号：US08509274B2
公开(公告)日：2013-08-13
申请号：US12799080
申请日：2010-04-16
申请人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Chao-Hsin Wu
发明人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Chao-Hsin Wu
IPC分类号： H01S3/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0016 , H01L33/06 , H01L33/30 , H01S5/0425 , H01S5/06203 , H01S5/06213 , H01S5/18311 , H01S5/1835 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。

6. 发明授权

US08005124B2 Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits 有权
标题翻译：发光和激光晶体管器件和电路的光学带宽增强
公开(公告)号：US08005124B2
公开(公告)日：2011-08-23
申请号：US12587895
申请日：2009-10-14
申请人： Han Wui Then , Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
发明人： Han Wui Then , Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01S5/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/0427 , H01S5/10 , H01S5/14 , H01S5/34
摘要： A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.
摘要翻译：一种响应于高频电输入信号产生宽带宽激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件; 在所述基极区域中提供至少一个量子尺寸区域，并且在所述光学谐振腔中包围所述基极区域的至少一部分; 将包括高频电输入信号的电信号相对于集电极，基极和发射极区域耦合，以引起来自晶体管器件的激光发射; 并降低晶体管激光器件的运行β，以响应高频电信号增强激光发射的光学带宽。

7. 发明申请

US20100289427A1 Light emitting and lasing semiconductor methods and devices 有权
标题翻译：发光和发光半导体的方法和装置
公开(公告)号：US20100289427A1
公开(公告)日：2010-11-18
申请号：US12799080
申请日：2010-04-16
申请人： Gabriel Walter , Nick Holonyak, JR. , Milton Feng , Chao-Hsin Wu
发明人： Gabriel Walter , Nick Holonyak, JR. , Milton Feng , Chao-Hsin Wu
IPC分类号： H05B37/02 , H01L33/04 , H01S5/20
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0016 , H01L33/06 , H01L33/30 , H01S5/0425 , H01S5/06203 , H01S5/06213 , H01S5/18311 , H01S5/1835 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。

8. 发明授权

US07813396B2 Transistor laser devices and methods 有权
公开(公告)号：US07813396B2
公开(公告)日：2010-10-12
申请号：US12384772
申请日：2009-04-08
申请人： Milton Feng , Nick Holonyak, Jr. , Gabriel Walter , Han Wui Then
发明人： Milton Feng , Nick Holonyak, Jr. , Gabriel Walter , Han Wui Then
IPC分类号： H01S5/34 , H01S5/062
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

9. 发明授权

US07696536B1 Semiconductor method and device 有权
标题翻译：半导体方法和器件
公开(公告)号：US07696536B1
公开(公告)日：2010-04-13
申请号：US11496161
申请日：2006-07-31
申请人： Milton Feng , Nick Holonyak, Jr.
发明人： Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01L29/74
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
摘要翻译：一种用于增强双极发光晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极发光晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且通过在基极区域中提供不同厚度的几个间隔开的量子尺寸区域，使得基极区域能够促进从发射极区域向集电极区域的载流子传输，其中量子尺寸区域的厚度从收集器附近的厚度分级在发射器附近最薄。

10. 发明申请

US20100078623A1 SEMICONDUCTOR METHOD AND DEVICE 有权
标题翻译：半导体方法和器件
公开(公告)号：US20100078623A1
公开(公告)日：2010-04-01
申请号：US11496161
申请日：2006-07-31
申请人： Milton Feng , Nick Holonyak, JR.
发明人： Milton Feng , Nick Holonyak, JR.
IPC分类号： H01L33/04 , H01L29/15 , H01L29/737
CPC分类号： H01L33/0016 , H01L33/08
摘要： A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
摘要翻译：一种用于增强双极发光晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极发光晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且通过在基极区域中提供不同厚度的几个间隔开的量子尺寸区域，使得基极区域能够促进从发射极区域向集电极区域的载流子传输，其中量子尺寸区域的厚度从收集器附近的厚度分级在发射器附近最薄。

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