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1. 发明授权

US08509274B2 Light emitting and lasing semiconductor methods and devices 有权
标题翻译：发光和发光半导体的方法和装置
公开(公告)号：US08509274B2
公开(公告)日：2013-08-13
申请号：US12799080
申请日：2010-04-16
申请人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Chao-Hsin Wu
发明人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Chao-Hsin Wu
IPC分类号： H01S3/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0016 , H01L33/06 , H01L33/30 , H01S5/0425 , H01S5/06203 , H01S5/06213 , H01S5/18311 , H01S5/1835 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。

2. 发明授权

US08179937B2 High speed light emitting semiconductor methods and devices 有权
标题翻译：高速发光半导体的方法和装置
公开(公告)号：US08179937B2
公开(公告)日：2012-05-15
申请号：US12799083
申请日：2010-04-16
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, Jr. , Han Wui Then , Chao-Hsin Wu
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, Jr. , Han Wui Then , Chao-Hsin Wu
IPC分类号： H01S3/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01L33/0016 , H01L33/30 , H01L33/38 , H01S5/06213 , H01S5/183 , H01S5/1835 , H01S5/34313
摘要： A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.
摘要翻译：一种表示高频电输入信号分量的高频光信号分量的制造方法包括以下步骤：提供半导体晶体管结构，该半导体晶体管结构包括半导体类型的基极区域，在第二半导体的半导体发射极和集电极区域之间类型; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量在内的电信号，以在量子尺寸区域辅助的基极区域产生输出自发光发射，包括高频率的输出自发光发射光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

3. 发明授权

US08005124B2 Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits 有权
标题翻译：发光和激光晶体管器件和电路的光学带宽增强
公开(公告)号：US08005124B2
公开(公告)日：2011-08-23
申请号：US12587895
申请日：2009-10-14
申请人： Han Wui Then , Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
发明人： Han Wui Then , Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01S5/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/0427 , H01S5/10 , H01S5/14 , H01S5/34
摘要： A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.
摘要翻译：一种响应于高频电输入信号产生宽带宽激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件; 在所述基极区域中提供至少一个量子尺寸区域，并且在所述光学谐振腔中包围所述基极区域的至少一部分; 将包括高频电输入信号的电信号相对于集电极，基极和发射极区域耦合，以引起来自晶体管器件的激光发射; 并降低晶体管激光器件的运行β，以响应高频电信号增强激光发射的光学带宽。

4. 发明授权

US07813396B2 Transistor laser devices and methods 有权
公开(公告)号：US07813396B2
公开(公告)日：2010-10-12
申请号：US12384772
申请日：2009-04-08
申请人： Milton Feng , Nick Holonyak, Jr. , Gabriel Walter , Han Wui Then
发明人： Milton Feng , Nick Holonyak, Jr. , Gabriel Walter , Han Wui Then
IPC分类号： H01S5/34 , H01S5/062
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

5. 发明授权

US07286583B2 Semiconductor laser devices and methods 有权
标题翻译：半导体激光器件及方法
公开(公告)号：US07286583B2
公开(公告)日：2007-10-23
申请号：US11068561
申请日：2005-02-28
申请人： Milton Feng , Nick Holonyak, Jr. , Richard Chan , Gabriel Walter
发明人： Milton Feng , Nick Holonyak, Jr. , Richard Chan , Gabriel Walter
IPC分类号： H01S3/13
CPC分类号： H01L33/0016 , B82Y20/00 , H01L33/08 , H01S5/0422 , H01S5/0618 , H01S5/06203 , H01S5/06226 , H01S5/06812 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34313
摘要： A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.
摘要翻译：一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

6. 发明授权

US08675703B2 Two terminal light emitting and lasing devices and methods 有权
标题翻译：两端发光和激光装置及方法
公开(公告)号：US08675703B2
公开(公告)日：2014-03-18
申请号：US12655806
申请日：2010-01-07
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01S5/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
摘要翻译：一种用于从半导体结构产生发光的方法，包括以下步骤：提供半导体结构，其包括在第一导电类型的发射极区域和与第一导电类型的发射极区域相反的第二导电类型的基极区域之间的第一半导体结导电类型和在基极区域和漏极区域之间的第二半导体结; 在基区内提供显示量子尺寸效应的区域; 提供与发射极区域耦合的发射极; 提供与所述基极区域和所述漏极区域耦合的基极/漏极电极; 并且相对于发射极和基极/漏极施加信号以获得来自半导体结构的发光。

7. 发明授权

US08179939B2 Light emitting and lasing semiconductor devices and methods 有权
标题翻译：发光和发光半导体器件及方法
公开(公告)号：US08179939B2
公开(公告)日：2012-05-15
申请号：US12930199
申请日：2010-12-31
申请人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter , Adam James
发明人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter , Adam James
IPC分类号： H01S5/00 , H01S5/34
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.
摘要翻译：一种用于响应于电信号产生发光的二端半导体器件，包括：设置在半导体发射极区域和具有邻近基极区域的隧道结的半导体集电极区域之间的无端半导体基极区域; 所述基区具有其中显示量子尺寸效应的区域; 分别与发射极区域和集电极区域耦合的发射极端子和集电极端子; 由此使得相对于发射极和集电极端子的电信号的施加导致来自基极区域的光发射。电信号的应用可用于反向偏置隧道结。在隧道结处产生的孔在基极区域中与电子流入基极区域，导致发光。显示量子尺寸效应的区域有助于重组。

8. 发明授权

US07953133B2 Light emitting and lasing semiconductor devices and methods 有权
标题翻译：发光和发光半导体器件及方法
公开(公告)号：US07953133B2
公开(公告)日：2011-05-31
申请号：US12287697
申请日：2008-10-10
申请人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter , Adam James
发明人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter , Adam James
IPC分类号： H01S5/00 , H01S5/34
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.
摘要翻译：一种用于响应于电信号产生发光的二端半导体器件，包括：设置在半导体发射极区域和具有邻近基极区域的隧道结的半导体集电极区域之间的无端半导体基极区域; 所述基区具有其中显示量子尺寸效应的区域; 分别与发射极区域和集电极区域耦合的发射极端子和集电极端子; 由此使得相对于发射极和集电极端子的电信号的施加导致来自基极区域的光发射。电信号的应用可用于反向偏置隧道结。在隧道结处产生的孔在基极区域中与电子流入基极区域，导致发光。显示量子尺寸效应的区域有助于重组。

9. 发明授权

US07711015B2 Method for controlling operation of light emitting transistors and laser transistors 有权
标题翻译：用于控制发光晶体管和激光晶体管的操作的方法
公开(公告)号：US07711015B2
公开(公告)日：2010-05-04
申请号：US11805859
申请日：2007-05-24
申请人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter
发明人： Nick Holonyak, Jr. , Milton Feng , Gabriel Walter
IPC分类号： H01S3/113
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/34 , H01S5/3412 , H01S5/3416
摘要： A method for controlling operation of a transistor includes the following steps: providing a bipolar transistor having emitter, base and collector regions; applying electrical signals to the transistor to produce light emission from the transistor; effecting photon-assisted tunneling of carriers in the transistor with self-generated photons of the light emission, and controlling operation of the transistor by controlling the photon-assisted tunneling.
摘要翻译：一种用于控制晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 将电信号施加到晶体管以产生来自晶体管的光发射; 通过发光的自发光子对晶体管中的载流子进行光子辅助隧穿，并且通过控制光子辅助隧道来控制晶体管的操作。

10. 发明授权

US07535034B2 PNP light emitting transistor and method 有权
公开(公告)号：US07535034B2
公开(公告)日：2009-05-19
申请号：US11364893
申请日：2006-02-27
申请人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Richard Chan
发明人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Richard Chan
IPC分类号： H01L33/00
CPC分类号： H01S5/0421 , H01L33/0004 , H01L33/04 , H01S5/06203 , H01S5/183 , H01S5/3054 , H01S5/3095
摘要： A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.

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