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1. 发明授权

US06451686B1 Control of semiconductor device isolation properties through incorporation of fluorine in peteos films 失效
标题翻译：通过在皮质膜中掺入氟来控制半导体器件的隔离性能
公开(公告)号：US06451686B1
公开(公告)日：2002-09-17
申请号：US08923501
申请日：1997-09-04
申请人： Chris Ngai , Joel Glenn , Mei Yee Shek , Judy Huang
发明人： Chris Ngai , Joel Glenn , Mei Yee Shek , Judy Huang
IPC分类号： A01L214763
CPC分类号： H01L21/02131 , C23C16/402 , H01L21/02129 , H01L21/022 , H01L21/02274 , H01L21/31629 , H01L21/762 , Y10S977/891 , Y10S977/892
摘要： A method and apparatus for reducing oxide traps within a silicon oxide film by incorporating a selected level of fluorine in the silicon oxide film. The method includes the steps of distributing a fluorine source to a processing chamber at a selected rate with the rate being chosen according to the desired level of fluorine to be incorporated into the film, flowing a process gas including a silicon source, an oxygen source and the fluorine source into the processing chamber, and maintaining a deposition zone within the chamber at processing conditions suitable to deposit a silicon oxide film having the selected level of fluorine incorporated into the film over a substrate disposed in the chamber. In a preferred embodiment, the selected level of fluorine incorporated into the film is between 1×1020 atoms/cm3 and 1×1021 atoms/cm3. In another preferred embodiment the silicon oxide film is deposited as a first layer of a composite layer premetal dielectric film.
摘要翻译：一种通过在氧化硅膜中并入选定量的氟来还原氧化硅膜内的氧化物陷阱的方法和装置。该方法包括如下步骤：以选定的速率将氟源分配到处理室，其速率根据要并入膜中的氟的期望水平来选择，流过包括硅源，氧源和氟源进入处理室，并且在适合于将具有选定水平的氟的氧化硅膜沉积在膜中的衬底上的处理条件下保持在室内的沉积区域。在优选的实施方案中，掺入薄膜中的所选择的氟含量为1×10 20原子/ cm 3至1×10 21原子/ cm 3。在另一优选实施例中，氧化硅膜作为复合层前金属绝缘膜的第一层沉积。

2. 发明授权

US06951826B2 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating 失效
标题翻译：碳化硅沉积用作低介电常数抗反射涂层
公开(公告)号：US06951826B2
公开(公告)日：2005-10-04
申请号：US10684079
申请日：2003-10-09
申请人： Christopher Bencher , Joe Feng , Mei-Yee Shek , Chris Ngai , Judy Huang
发明人： Christopher Bencher , Joe Feng , Mei-Yee Shek , Chris Ngai , Judy Huang
IPC分类号： C23C16/32 , C30B25/10 , H01L21/027 , H01L21/04 , H01L21/205 , H01L21/314 , H01L21/768 , H01L23/532 , H01L21/302
CPC分类号： H01L21/0276 , C23C16/325 , C30B25/105 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/0262 , H01L21/0445 , H01L21/314 , H01L21/76801 , H01L21/76807 , H01L21/76829 , H01L21/76834 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , Y10S438/931 , Y10S438/952 , H01L2924/00
摘要： The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.
摘要翻译：本发明通常提供一种使用具有某些工艺参数的硅烷基材料沉积碳化硅的方法，其可用于形成用于IC应用的合适的ARC。在某些工艺参数下，碳化硅的固定厚度可用于各种厚度的下层。对于给定的反射率，碳化硅ARC的厚度基本上与下层的厚度无关，相比之下，为了获得给定的反射率，每个下层厚度的ARC厚度的调整的典型需要相反。本发明的另一方面包括具有碳化硅抗反射涂层的基底，其包括沉积在基底上的电介质层和介电常数小于约7.0，优选约6.0或更小的碳化硅抗反射涂层。

3. 发明申请

US20050181623A1 SILICON CARBIDE DEPOSITION FOR USE AS A LOW DIELECTRIC CONSTANT ANTI-REFLECTIVE COATING 失效
标题翻译：用作低介电常数抗反射涂层的碳化硅沉积
公开(公告)号：US20050181623A1
公开(公告)日：2005-08-18
申请号：US10684079
申请日：2003-10-09
申请人： Christopher Bencher , Joe Feng , Mei-Yee Shek , Chris Ngai , Judy Huang
发明人： Christopher Bencher , Joe Feng , Mei-Yee Shek , Chris Ngai , Judy Huang
IPC分类号： C23C16/32 , C30B25/10 , H01L21/027 , H01L21/04 , H01L21/205 , H01L21/314 , H01L21/768 , H01L23/532 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0276 , C23C16/325 , C30B25/105 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/0262 , H01L21/0445 , H01L21/314 , H01L21/76801 , H01L21/76807 , H01L21/76829 , H01L21/76834 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , Y10S438/931 , Y10S438/952 , H01L2924/00
摘要： The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.
摘要翻译：本发明通常提供一种使用具有某些工艺参数的硅烷基材料沉积碳化硅的方法，其可用于形成用于IC应用的合适的ARC。在某些工艺参数下，碳化硅的固定厚度可用于各种厚度的下层。对于给定的反射率，碳化硅ARC的厚度基本上与下层的厚度无关，相比之下，为了获得给定的反射率，每个下层厚度的ARC厚度的调整的典型需要。本发明的另一方面包括具有碳化硅抗反射涂层的基底，其包括沉积在基底上的电介质层和介电常数小于约7.0，优选约6.0或更小的碳化硅抗反射涂层。

4. 发明授权

US06635583B2 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating 有权
标题翻译：碳化硅沉积用作低介电常数抗反射涂层
公开(公告)号：US06635583B2
公开(公告)日：2003-10-21
申请号：US09219945
申请日：1998-12-23
申请人： Christopher Bencher , Joe Feng , Mei-Yee Shek , Chris Ngai , Judy Huang
发明人： Christopher Bencher , Joe Feng , Mei-Yee Shek , Chris Ngai , Judy Huang
IPC分类号： H01L21302
CPC分类号： H01L21/0276 , C23C16/325 , C30B25/105 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/0262 , H01L21/0445 , H01L21/314 , H01L21/76801 , H01L21/76807 , H01L21/76829 , H01L21/76834 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , Y10S438/931 , Y10S438/952 , H01L2924/00
摘要： The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier layer and an etch stop, even in complex damascene structures and with high diffusion conductors such as copper as a conductive material. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. A preferred process sequence for forming a silicon carbide anti-reflective coating on a substrate, comprises introducing silicon, carbon, and a noble gas into a reaction zone of a process chamber, initiating a plasma in the reaction zone, reacting the silicon and the carbon in the presence of the plasma to form silicon carbide, and depositing a silicon carbide anti-reflective coating on a substrate in the chamber. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.
摘要翻译：本发明通常提供一种使用具有某些工艺参数的硅烷基材料沉积碳化硅的方法，其可用于形成用于IC应用的合适的ARC。即使在复杂的镶嵌结构中也可以使用相同的材料作为阻挡层和蚀刻阻挡层，并且还可以使用诸如铜作为导电材料的高扩散导体。在某些工艺参数下，碳化硅的固定厚度可用于各种厚度的下层。对于给定的反射率，碳化硅ARC的厚度基本上与下层的厚度无关，相比之下，为了获得给定的反射率，每个下层厚度的ARC厚度的调整的典型需要。用于在衬底上形成碳化硅抗反射涂层的优选工艺顺序包括将硅，碳和惰性气体引入到处理室的反应区中，在反应区中引发等离子体，使硅和碳在等离子体的存在下形成碳化硅，以及在该腔室中的基底上沉积碳化硅抗反射涂层。本发明的另一方面包括具有碳化硅抗反射涂层的基底，其包括沉积在基底上的电介质层和介电常数小于约7.0，优选约6.0或更小的碳化硅抗反射涂层。

5. 发明申请

US20060089007A1 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 失效
标题翻译：原位沉积低K电介质层，阻挡层，蚀刻停止和抗反射涂层，用于大马士革应用
公开(公告)号：US20060089007A1
公开(公告)日：2006-04-27
申请号：US11301063
申请日：2005-12-12
申请人： Judy Huang
发明人： Judy Huang
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/31
CPC分类号： H01L21/76829 , C23C16/325 , C30B25/105 , C30B29/36 , H01L21/02381 , H01L21/02447 , H01L21/02532 , H01L21/0262 , H01L21/0276 , H01L21/0445 , H01L21/314 , H01L21/76801 , H01L21/76807 , H01L21/76834 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , Y10S438/931 , Y10S438/932 , Y10S438/952 , H01L2924/00
摘要： The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. The dielectric layer can be deposited with different precursors as the SiC material, but preferably with the same or similar precursors as the SiC material. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features. The invention also provides processing regimes that include using an organosilane as a silicon and carbon source, perhaps independently of any other carbon source or hydrogen source, and preferably in the absence of a substantial amount of oxygen to produce a SiC with a dielectric constant of less than 7.0. This particular SiC material is useful in complex structures, such as a damascene structure and is conducive to in situ deposition, especially when used in multiple capacities for the different layers, such as the barrier layer, the etch stop, and the ARC and can include in situ deposition of the associated dielectric layer(s).
摘要翻译：本发明提供了在IC应用中，根据某些工艺方案形成的SiC材料，其可用作包括前金属电介质（PMD）水平在内的多层次的阻挡层，蚀刻停止层和/或ARC，并且提供原位沉积有用于阻挡层的SiC材料的介电层，以及蚀刻停止层和ARC。介电层可以作为SiC材料沉积不同的前体，但优选与SiC材料相同或相似的前体沉积。本发明对于使用高扩散铜作为导电材料的IC特别有用。本发明还可以利用含有诸如氨的还原剂的等离子体来减少可能发生的任何氧化物，特别是在诸如铜填充特征的金属表面上。本发明还提供了处理方案，其包括使用有机硅烷作为硅和碳源，可能独立于任何其它碳源或氢源，并且优选在不存在大量氧的情况下产生介电常数较小的SiC 超过7.0。这种特殊的SiC材料可用于复杂的结构，例如镶嵌结构，并且有利于原位沉积，特别是当用于不同层的多个容量时，例如阻挡层，蚀刻停止层和ARC，并且可以包括相关电介质层的原位沉积。

6. 发明授权

US06821571B2 Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers 失效
标题翻译：等离子体处理以增强附着力并使含碳层的氧化最小化
公开(公告)号：US06821571B2
公开(公告)日：2004-11-23
申请号：US09336525
申请日：1999-06-18
申请人： Judy Huang
发明人： Judy Huang
IPC分类号： C23C1402
CPC分类号： H01L21/02126 , C23C16/325 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/3105 , H01L21/314 , H01L21/3146 , H01L21/31633
摘要： The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.
摘要翻译：本发明通常提供了改进的含碳层的粘附性和抗氧化性，而不需要额外的沉积层。一方面，本发明使用诸如氦（He），氩（Ar）或其它惰性气体等离子体或惰性气体等离子体的惰性气体等离子体处理含碳材料如碳化硅的暴露表面，含有等离子体，如一氧化二氮（N2O）等离子体。其它含碳材料可以包括有机聚合材料，无定形碳，无定形碳氟化合物，含碳氧化物和其它含碳材料。等离子体处理优选在沉积待处理层之后原位进行。优选地，其中发生原位沉积和等离子体处理的处理室被配置为递送含碳层的相同或相似的前体。然而，该层可以用不同的前体沉积。本发明还提供了产生处理等离子体的处理方案和使用处理等离子体的系统。含碳材料可以用于各种层，例如阻挡层，蚀刻停止层，ARC，钝化层和电介质层。

7. 发明申请

US20120295394A1 METHOD FOR REAR POINT CONTACT FABRICATION FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池后点接触制造方法
公开(公告)号：US20120295394A1
公开(公告)日：2012-11-22
申请号：US13473538
申请日：2012-05-16
申请人： Young Kyu Cho , Judy Huang
发明人： Young Kyu Cho , Judy Huang
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , Y02E10/547
摘要： A method for forming holes in the backside dielectric layer of solar cells for fabrication of rear point contact. The backside dielectric layer is coated with a layer of carbon. A shadow mask is placed over the carbon layer and reactive ion etch (RIE) is used to transfer the holes in the shadow mask to the carbon layer, to thereby form a carbon mask. The shadow mask is then removed and RIE is used to transfer the holes from the carbon mask to the dielectric layer. The carbon mask is then removed by, e.g., ashing.
摘要翻译：一种在太阳能电池背面介电层中形成孔的方法，用于制造后点接触。背面介电层涂有一层碳。将荫罩放置在碳层上，使用反应离子蚀刻（RIE）将荫罩中的孔转移到碳层，从而形成碳掩模。然后去除荫罩，并使用RIE将孔从碳掩模转移到电介质层。然后通过例如灰化除去碳掩模。

8. 发明授权

US07144606B2 Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers 失效
标题翻译：等离子体处理以增强附着力并使含碳层的氧化最小化
公开(公告)号：US07144606B2
公开(公告)日：2006-12-05
申请号：US10995002
申请日：2004-11-22
申请人： Judy Huang
发明人： Judy Huang
IPC分类号： C23C16/32 , C23C16/40 , C23C16/42 , C23C16/56 , B05D3/06 , C23C16/505
CPC分类号： H01L21/02126 , C23C16/325 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/3105 , H01L21/314 , H01L21/3146 , H01L21/31633
摘要： The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.
摘要翻译：本发明通常提供了改进的含碳层的粘附性和抗氧化性，而不需要额外的沉积层。一方面，本发明使用诸如氦（He），氩（Ar）或其它惰性气体等离子体或惰性气体等离子体的惰性气体等离子体处理含碳材料如碳化硅的暴露表面，含有一氧化二氮（N 2 O 2 O）等离子体的等离子体。其它含碳材料可以包括有机聚合材料，无定形碳，无定形碳氟化合物，含碳氧化物和其它含碳材料。等离子体处理优选在沉积待处理层之后原位进行。优选地，其中发生原位沉积和等离子体处理的处理室被配置为递送含碳层的相同或相似的前体。然而，该层可以用不同的前体沉积。本发明还提供了产生处理等离子体的处理方案和使用处理等离子体的系统。含碳材料可以用于各种层，例如阻挡层，蚀刻停止层，ARC，钝化层和电介质层。

9. 发明授权

US06734102B2 Plasma treatment for copper oxide reduction 有权
公开(公告)号：US06734102B2
公开(公告)日：2004-05-11
申请号：US10252195
申请日：2002-09-23
申请人： Sudha Rathi , Ping Xu , Judy Huang
发明人： Sudha Rathi , Ping Xu , Judy Huang
IPC分类号： H01L23205
CPC分类号： H01L21/32136 , B08B7/0035 , C23C16/0245 , C23G5/00 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/76807 , H01L21/76883 , Y10S438/907
摘要： The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

10. 发明授权

US06358573B1 Mixed frequency CVD process 有权
标题翻译：混合频率CVD工艺
公开(公告)号：US06358573B1
公开(公告)日：2002-03-19
申请号：US09585258
申请日：2000-06-02
申请人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H124
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

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