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1. 发明授权

US08569837B2 MOS devices having elevated source/drain regions 有权
标题翻译：具有升高的源极/漏极区域的MOS器件
公开(公告)号：US08569837B2
公开(公告)日：2013-10-29
申请号：US11800615
申请日：2007-05-07
申请人： Chih-Hsin Ko , Hung-Wei Chen , Chung-Hu Ke , Ta-Ming Kuan , Wen-Chin Lee
发明人： Chih-Hsin Ko , Hung-Wei Chen , Chung-Hu Ke , Ta-Ming Kuan , Wen-Chin Lee
IPC分类号： H01L29/417 , H01L27/092 , H01L29/78
CPC分类号： H01L21/823814 , H01L21/823807 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7848
摘要： A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a deep source/drain region adjacent the gate electrode; a silicide region over the deep source/drain region; and an elevated metallized source/drain region between the silicide region and the gate electrode. The elevated metallized source/drain region adjoins the silicide region.
摘要翻译：半导体结构包括半导体衬底; 半导体衬底上的栅极电介质; 位于栅极电介质上的栅电极; 与栅电极相邻的深源/漏区; 深源/漏区上的硅化物区; 以及在硅化物区域和栅电极之间的升高的金属化源极/漏极区域。升高的金属化源极/漏极区域邻接硅化物区域。

2. 发明申请

US20080277735A1 MOS devices having elevated source/drain regions 有权
标题翻译：具有升高的源极/漏极区域的MOS器件
公开(公告)号：US20080277735A1
公开(公告)日：2008-11-13
申请号：US11800615
申请日：2007-05-07
申请人： Chih-Hsin Ko , Hung-Wei Chen , Chung-Hu Ke , Ta-Ming Kuan , Wen-Chin Lee
发明人： Chih-Hsin Ko , Hung-Wei Chen , Chung-Hu Ke , Ta-Ming Kuan , Wen-Chin Lee
IPC分类号： H01L29/417 , H01L27/092 , H01L29/78
CPC分类号： H01L21/823814 , H01L21/823807 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7848
摘要： A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a deep source/drain region adjacent the gate electrode; a silicide region over the deep source/drain region; and an elevated metallized source/drain region between the silicide region and the gate electrode. The elevated metallized source/drain region adjoins the silicide region.
摘要翻译：半导体结构包括半导体衬底; 半导体衬底上的栅极电介质; 位于栅极电介质上的栅电极; 与栅电极相邻的深源/漏区; 深源/漏区上的硅化物区; 以及在硅化物区域和栅电极之间的升高的金属化源极/漏极区域。升高的金属化源极/漏极区域邻接硅化物区域。

3. 发明授权

US07985652B2 Metal stress memorization technology 有权
标题翻译：金属应力记忆技术
公开(公告)号：US07985652B2
公开(公告)日：2011-07-26
申请号：US11855701
申请日：2007-09-14
申请人： Chung-Hu Ke , Ta-Ming Kuan , Chih-Hsin Ko , Wen-Chin Lee
发明人： Chung-Hu Ke , Ta-Ming Kuan , Chih-Hsin Ko , Wen-Chin Lee
IPC分类号： H01L21/8234
CPC分类号： H01L21/823807 , H01L29/665 , H01L29/7847
摘要： A semiconductor device and method for manufacturing a tensile strained NMOS and a compressive strained PMOS transistor pair, wherein a stressor material is sacrificial is disclosed. The method provides for a substrate, which includes a source/drain for an NMOS transistor, and a PMOS transistor. A first barrier layer is formed on the substrate and a first stressor material is formed on the first barrier layer. The first barrier layer is selectively removed from the PMOS transistor. The substrate is flash annealed and the remaining first stressor material and barrier layer is removed from the substrate.
摘要翻译：公开了用于制造拉伸应变NMOS和压缩应变PMOS晶体管对的半导体器件和方法，其中应力源材料是牺牲的。该方法提供了一种衬底，其包括用于NMOS晶体管的源极/漏极和PMOS晶体管。在基板上形成第一阻挡层，在第一阻挡层上形成第一应力源材料。从PMOS晶体管选择性地去除第一势垒层。衬底被闪光退火，剩余的第一应力材料和阻挡层从衬底上去除。

4. 发明申请

US20080224227A1 BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture 有权
公开(公告)号：US20080224227A1
公开(公告)日：2008-09-18
申请号：US11717484
申请日：2007-03-13
申请人： Chih-Hsin Ko , Tzu-Juei Wang , Hung-Wei Chen , Chung-Hu Ke , Wen-Chin Lee
发明人： Chih-Hsin Ko , Tzu-Juei Wang , Hung-Wei Chen , Chung-Hu Ke , Wen-Chin Lee
IPC分类号： H01L27/06
CPC分类号： H01L21/8249 , H01L21/823807 , H01L27/0623 , H01L29/7843
摘要： A BiCMOS device with enhanced performance by mechanical uniaxial strain is provided. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate. A first contact etch stop layer with tensile stress is formed over the NMOS transistor, and a second contact etch stop layer with compressive stress is formed over the PMOS transistor and the bipolar transistor, allowing for an enhancement of each device. Another embodiment has, in addition to the stressed contact etch stop layers, strained channel regions in the PMOS transistor and the NMOS transistor, and a strained base in the BJT.

5. 发明申请

US20080224225A1 MOS transistors with selectively strained channels 有权
标题翻译：具有选择性应变通道的MOS晶体管
公开(公告)号：US20080224225A1
公开(公告)日：2008-09-18
申请号：US11717450
申请日：2007-03-13
申请人： Chih-Hsin Ko , Wen-Chin Lee , Chung-Hu Ke , Hung-Wei Chen
发明人： Chih-Hsin Ko , Wen-Chin Lee , Chung-Hu Ke , Hung-Wei Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/28052 , H01L21/823835 , H01L21/823842 , H01L21/82385 , H01L29/4933 , H01L29/517 , H01L29/665 , H01L29/7843 , H01L29/7845
摘要： The channels of first and second CMOS transistors can be selectively stressed. A gate structure of the first transistor includes a stressor that produces stress in the channel of the first transistor. A gate structure of the second transistor is disposed in contact with a layer of material that produces stress in the channel of the second transistor.
摘要翻译：第一和第二CMOS晶体管的通道可以选择性地受到压力。第一晶体管的栅极结构包括在第一晶体管的沟道中产生应力的应力源。第二晶体管的栅极结构设置成与在第二晶体管的沟道中产生应力的材料层接触。

6. 发明授权

US07737532B2 Hybrid Schottky source-drain CMOS for high mobility and low barrier 有权
标题翻译：用于高移动性和低屏障的混合肖特基源极 - 漏极CMOS
公开(公告)号：US07737532B2
公开(公告)日：2010-06-15
申请号：US11220176
申请日：2005-09-06
申请人： Chung-Hu Ke , Chih-Hsin Ko , Hung-Wei Chen , Wen-Chin Lee , Min-Hwa Chi
发明人： Chung-Hu Ke , Chih-Hsin Ko , Hung-Wei Chen , Wen-Chin Lee , Min-Hwa Chi
IPC分类号： H01L29/04
CPC分类号： H01L21/823807 , H01L21/823821 , H01L21/823878 , H01L21/8252 , H01L21/8258 , H01L21/84 , H01L27/0922 , H01L27/1203 , H01L27/1207 , H01L29/785
摘要： A CMOS device is provided. A semiconductor device comprises a substrate, the substrate having a first region and a second region, the first region having a first crystal orientation represented by a family of Miller indices comprising {i,j,k}, the second region having a second crystal orientation represented a family of Miller indices comprising {l,m,n}, wherein l2+m2+n2>i2+j2+k2. Alternative embodiments further comprise an NMOSFET formed on the first region, and a PMOSFET formed on the second region. Embodiments further comprise a Schottky contact formed with at least one of a the NMOSFET or PMOSFET.
摘要翻译：提供CMOS器件。半导体器件包括衬底，衬底具有第一区域和第二区域，第一区域具有由包括{i，j，k}的米勒指数族代表的第一晶体取向，第二区域具有第二晶体取向表示包括{l，m，n}的米勒指数族，其中l2 + m2 + n2> i2 + j2 + k2。替代实施例还包括形成在第一区域上的NMOSFET和形成在第二区域上的PMOSFET。实施例还包括由NMOSFET或PMOSFET中的至少一个形成的肖特基接触。

7. 发明授权

US07511348B2 MOS transistors with selectively strained channels 有权
标题翻译：具有选择性应变通道的MOS晶体管
公开(公告)号：US07511348B2
公开(公告)日：2009-03-31
申请号：US11717450
申请日：2007-03-13
申请人： Chih-Hsin Ko , Wen-Chin Lee , Chung-Hu Ke , Hung-Wei Chen
发明人： Chih-Hsin Ko , Wen-Chin Lee , Chung-Hu Ke , Hung-Wei Chen
IPC分类号： H01L29/76
CPC分类号： H01L21/823807 , H01L21/28052 , H01L21/823835 , H01L21/823842 , H01L21/82385 , H01L29/4933 , H01L29/517 , H01L29/665 , H01L29/7843 , H01L29/7845
摘要： The channels of first and second CMOS transistors can be selectively stressed. A gate structure of the first transistor includes a stressor that produces stress in the channel of the first transistor. A gate structure of the second transistor is disposed in contact with a layer of material that produces stress in the channel of the second transistor.
摘要翻译：第一和第二CMOS晶体管的通道可以选择性地受到压力。第一晶体管的栅极结构包括在第一晶体管的沟道中产生应力的应力源。第二晶体管的栅极结构设置成与在第二晶体管的沟道中产生应力的材料层接触。

8. 发明授权

US07466008B2 BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture 有权
标题翻译：通过机械单轴应变的BiCMOS性能提高和制造方法
公开(公告)号：US07466008B2
公开(公告)日：2008-12-16
申请号：US11717484
申请日：2007-03-13
申请人： Chih-Hsin Ko , Tzu-Juei Wang , Hung-Wei Chen , Chung-Hu Ke , Wen-Chin Lee
发明人： Chih-Hsin Ko , Tzu-Juei Wang , Hung-Wei Chen , Chung-Hu Ke , Wen-Chin Lee
IPC分类号： H01L27/06 , H01L27/07
CPC分类号： H01L21/8249 , H01L21/823807 , H01L27/0623 , H01L29/7843
摘要： A BiCMOS device with enhanced performance by mechanical uniaxial strain is provided. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate. A first contact etch stop layer with tensile stress is formed over the NMOS transistor, and a second contact etch stop layer with compressive stress is formed over the PMOS transistor and the bipolar transistor, allowing for an enhancement of each device. Another embodiment has, in addition to the stressed contact etch stop layers, strained channel regions in the PMOS transistor and the NMOS transistor, and a strained base in the BJT.
摘要翻译：提供了通过机械单轴应变增强性能的BiCMOS器件。本发明的第一实施例包括形成在衬底的不同区域上的NMOS晶体管，PMOS晶体管和双极晶体管。具有拉伸应力的第一接触蚀刻停止层形成在NMOS晶体管上，并且在PMOS晶体管和双极晶体管上形成具有压应力的第二接触蚀刻停止层，从而允许每个器件的增强。除了应力接触蚀刻停止层之外，另一实施例还包括PMOS晶体管和NMOS晶体管中的应变通道区域以及BJT中的应变基极。

9. 发明申请

US20080191285A1 CMOS devices with schottky source and drain regions 审中-公开
标题翻译：具有肖特基源极和漏极区域的CMOS器件
公开(公告)号：US20080191285A1
公开(公告)日：2008-08-14
申请号：US11704402
申请日：2007-02-09
申请人： Chih-Hsin Ko , Hung-Wei Chen , Chung-Hu Ke , Wen-Chin Lee
发明人： Chih-Hsin Ko , Hung-Wei Chen , Chung-Hu Ke , Wen-Chin Lee
IPC分类号： H01L29/78 , H01L21/8238
CPC分类号： H01L21/823814 , H01L29/1054 , H01L29/165 , H01L29/47 , H01L29/665 , H01L29/6653 , H01L29/66568 , H01L29/6659 , H01L29/66643 , H01L29/7843
摘要： A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension region. The semiconductor structure further includes a PMOS device at the surface of the semiconductor substrate, wherein the PMOS device comprises a source/drain extension region comprising only non-metal materials. Schottky source/drain extension regions may be formed for both PMOS and NMOS devices, wherein the Schottky barrier height of the PMOS device are reduced by forming the PMOS device over a semiconductor layer having a low valence band.
摘要翻译：半导体结构包括半导体衬底和在半导体衬底的表面处的NMOS器件，其中NMOS器件包括肖特基源极/漏极延伸区域。半导体结构还包括在半导体衬底的表面处的PMOS器件，其中PMOS器件包括仅包含非金属材料的源极/漏极延伸区域。可以为PMOS器件和NMOS器件形成肖特基源极/漏极延伸区域，其中通过在具有低价带的半导体层上形成PMOS器件来减小PMOS器件的肖特基势垒高度。

10. 发明申请

US20070267694A1 Transistors with stressed channels and methods of manufacture 有权
标题翻译：具有应力通道的晶体管和制造方法
公开(公告)号：US20070267694A1
公开(公告)日：2007-11-22
申请号：US11438711
申请日：2006-05-22
申请人： Chih-Hsin Ko , Chung-Hu Ke , Hung-Wei Chen , Wen-Chin Lee
发明人： Chih-Hsin Ko , Chung-Hu Ke , Hung-Wei Chen , Wen-Chin Lee
IPC分类号： H01L29/76
CPC分类号： H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7843
摘要： A MOS device having optimized stress in the channel region and a method for forming the same are provided. The MOS device includes a gate over a substrate, a gate spacer on a sidewall of the gate wherein a non-silicide region exists under the gate spacer, a source/drain region comprising a recess in the substrate, and a silicide region on the source/drain region. A step height is formed between a higher portion of the silicide region and a lower portion of the silicide region. The recess is spaced apart from a respective edge of a non-silicide region by a spacing. The step height and the spacing preferably have a ratio of less than or equal to about 3. The width of the non-silicide region and the step height preferably have a ratio of less than or equal to about 3. The MOS device is preferably an NMOS device.
摘要翻译：提供了在通道区域中具有优化的应力的MOS器件及其形成方法。 MOS器件包括在衬底上的栅极，栅极侧壁上的栅极间隔物，其中在栅极间隔物下方存在非硅化物区域，在衬底中包含凹陷的源极/漏极区域和源极上的硅化物区域 /漏区。在硅化物区域的较高部分和硅化物区域的下部之间形成台阶高度。凹槽与非硅化物区域的相应边缘间隔一定距离。台阶高度和间距优选具有小于或等于约3的比率。非硅化物区域的宽度和台阶高度优选具有小于或等于约3的比率。MOS器件优选为 NMOS器件。

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