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1. 发明授权

US07439085B2 Method and apparatus for electroluminescence 有权
标题翻译：电致发光的方法和装置
公开(公告)号：US07439085B2
公开(公告)日：2008-10-21
申请号：US11749006
申请日：2007-05-15
申请人： Chih Chieh Yeh , Shaw Hung Ku , Tahui Wang , Chih Yuan Lu
发明人： Chih Chieh Yeh , Shaw Hung Ku , Tahui Wang , Chih Yuan Lu
IPC分类号： H01L21/00
CPC分类号： H01L33/02 , H01L33/0004
摘要： Methods and apparatuses for causing electroluminescence with charge trapping structures are disclosed. Various embodiments relate to methods and apparatuses for causing electroluminescence with charge carriers of one type provided to the charge trapping structure by a forward biased p-n structure or a reverse biased p-n structure.
摘要翻译：公开了用电荷捕获结构进行电致发光的方法和装置。各种实施方案涉及用于通过正向偏置p-n结构或反向偏置p-n结构提供给电荷俘获结构的一种类型的电荷载体进行电致发光的方法和装置。

2. 发明授权

US07230277B2 Method and apparatus for electroluminescence 有权
标题翻译：电致发光的方法和装置
公开(公告)号：US07230277B2
公开(公告)日：2007-06-12
申请号：US11086898
申请日：2005-03-22
申请人： Chih Chieh Yeh , Shao Hong Ku , Tahui Wang , Chih Yuan Lu
发明人： Chih Chieh Yeh , Shao Hong Ku , Tahui Wang , Chih Yuan Lu
IPC分类号： H01L27/108
CPC分类号： H01L33/02 , H01L33/0004
摘要： Methods and apparatuses for causing electroluminescence with charge trapping structures are disclosed. Various embodiments relate to methods and apparatuses for causing electroluminescence with charge carriers of one type provided to the charge trapping structure by a forward biased p-n structure or a reverse biased p-n structure.
摘要翻译：公开了用电荷捕获结构进行电致发光的方法和装置。各种实施方案涉及用于通过正向偏置p-n结构或反向偏置p-n结构提供给电荷俘获结构的一种类型的电荷载体进行电致发光的方法和装置。

3. 发明授权

US07158411B2 Integrated code and data flash memory 有权
标题翻译：集成代码和数据闪存
公开(公告)号：US07158411B2
公开(公告)日：2007-01-02
申请号：US10815370
申请日：2004-04-01
申请人： Chih Chieh Yeh , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
发明人： Chih Chieh Yeh , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
IPC分类号： G11C16/04
CPC分类号： G11C16/0475 , G11C16/10 , G11C16/16
摘要： A memory architecture for an integrated circuit comprises a first memory array configured to store data for one pattern of data usage and a second memory array configured to store data for another pattern of data usage. The first and second memory arrays comprise charge storage based nonvolatile memory cells having substantially the same structure in both arrays. A first operation algorithm adapted for example for data flash applications is used for programming, erasing and reading data in the first memory array. A second operation algorithm adapted for example for code flash applications is used for programming, erasing and reading data in the second memory array, wherein the second operation algorithm is different than the first operation algorithm. Thus, one die with memory for both code flash and data flash applications can be easily manufactured using a simple process, at low cost and high yield.
摘要翻译：用于集成电路的存储器架构包括被配置为存储用于一种数据使用模式的数据的第一存储器阵列和被配置为存储用于另一数据使用模式的数据的第二存储器阵列。第一和第二存储器阵列包括在两个阵列中具有基本上相同结构的基于电荷存储的非易失性存储器单元。适用于例如数据闪存应用的第一操作算法用于在第一存储器阵列中编程，擦除和读取数据。适用于例如代码闪存应用的第二操作算法用于在第二存储器阵列中编程，擦除和读取数据，其中第二操作算法与第一操作算法不同。因此，具有用于代码闪存和数据闪存应用的存储器的一个管芯可以使用简单的工艺以低成本和高产率容易地制造。

4. 发明授权

US08501591B2 Method for manufacturing a multiple-bit-per-cell memory 有权
标题翻译：制造多位单元存储器的方法
公开(公告)号：US08501591B2
公开(公告)日：2013-08-06
申请号：US11285614
申请日：2005-11-21
申请人： Chih Chieh Yeh , Han Chao Lai , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
发明人： Chih Chieh Yeh , Han Chao Lai , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
IPC分类号： H01L21/479 , H01L21/326
CPC分类号： G11C11/5692 , H01L27/101
摘要： A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
摘要翻译：一种用于制造电可编程非易失性存储单元的方法包括在衬底上形成第一电极，在第一电极上形成具有特征在于应力的响应逐渐变化的特性的材料的电极间层，并形成第二电极在材料的电极间层之上。电极间层包括在第一和第二电极之间的介电层，例如超薄氧化物。可编程电阻或其他属性通过强调介电层来表示存储的数据来建立。存储器单元的实施例适于存储每个单元的多个数据位和/或适于在不进行擦除处理的情况下编程多于一次。

5. 发明授权

US07529128B2 Integrated code and data flash memory 有权
标题翻译：集成代码和数据闪存
公开(公告)号：US07529128B2
公开(公告)日：2009-05-05
申请号：US11617613
申请日：2006-12-28
申请人： Chih Chieh Yeh , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
发明人： Chih Chieh Yeh , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
IPC分类号： G11C11/34
CPC分类号： G11C16/0475 , G11C16/10 , G11C16/16
摘要： A memory architecture for an integrated circuit comprises a first memory array configured to store data for one pattern of data usage and a second memory array configured to store data for another pattern of data usage. The first and second memory arrays comprise charge storage based nonvolatile memory cells having substantially the same structure in both arrays. A first operation algorithm adapted for example for data flash applications is used for programming, erasing and reading data in the first memory array. A second operation algorithm adapted for example for code flash applications is used for programming, erasing and reading data in the second memory array, wherein the second operation algorithm is different than the first operation algorithm. Thus, one die with memory for both code flash and data flash applications can be easily manufactured using a simple process, at low cost and high yield.
摘要翻译：用于集成电路的存储器架构包括被配置为存储用于一种数据使用模式的数据的第一存储器阵列和被配置为存储用于另一数据使用模式的数据的第二存储器阵列。第一和第二存储器阵列包括在两个阵列中具有基本上相同结构的基于电荷存储的非易失性存储器单元。适用于例如数据闪存应用的第一操作算法用于在第一存储器阵列中编程，擦除和读取数据。适用于例如代码闪存应用的第二操作算法用于在第二存储器阵列中编程，擦除和读取数据，其中第二操作算法与第一操作算法不同。因此，具有用于代码闪存和数据闪存应用的存储器的一个管芯可以使用简单的工艺以低成本和高产率容易地制造。

6. 发明授权

US07180123B2 Method for programming programmable eraseless memory 有权
标题翻译：编程可编程擦除存储器的方法
公开(公告)号：US07180123B2
公开(公告)日：2007-02-20
申请号：US10642249
申请日：2003-08-15
申请人： Chih Chieh Yeh , Han Chao Lai , Wen Her Tsai , Tao Cheng Lu , Chih Yuan Lu
发明人： Chih Chieh Yeh , Han Chao Lai , Wen Her Tsai , Tao Cheng Lu , Chih Yuan Lu
IPC分类号： H01L29/76
CPC分类号： G11C11/5692 , G11C17/14 , G11C2211/5634 , H01L23/5252 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： A method for programming a memory cell is based on applying stress to a memory cell, comprising a first electrode, a second electrode and an inter-electrode layer, to induce a progressive change in a property of the inter-electrode layer. The method includes a verify step including generating a signal, such as a cell current, indicating the value of the property in the selected memory cell. Then, the signal is compared with a reference signal to verify programming of the desired data. Because of the progressive nature of the change, many levels of programming can be achieved. The many levels of programming can be applied for programming a single cell more than once, without an erase process, to programming multiple bits in a single cell, and to a combination of multiple bit and multiple time of programming.
摘要翻译：用于对存储单元进行编程的方法是基于向包括第一电极，第二电极和电极间层的存储单元施加应力，以引起电极间层的性能的逐渐变化。该方法包括验证步骤，包括生成指示所选择的存储单元中的属性的值的诸如单元电流的信号。然后，将信号与参考信号进行比较，以验证所需数据的编程。由于变革的渐进性，可以实现多层次的编程。多个编程级别可以应用于单个单元的编程，而不需要擦除处理，以编程单个单元中的多个位，以及多个位和多个编程时间的组合。

7. 发明授权

US07132350B2 Method for manufacturing a programmable eraseless memory 有权
标题翻译：制造可编程擦除存储器的方法
公开(公告)号：US07132350B2
公开(公告)日：2006-11-07
申请号：US10641897
申请日：2003-08-15
申请人： Chih Chieh Yeh , Han Chao Lai , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
发明人： Chih Chieh Yeh , Han Chao Lai , Wen Jer Tsai , Tao Cheng Lu , Chih Yuan Lu
IPC分类号： H01L21/479 , H01L21/326
CPC分类号： G11C11/5692 , H01L27/101
摘要： A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
摘要翻译：一种用于制造电可编程非易失性存储单元的方法包括在衬底上形成第一电极，在第一电极上形成具有特征在于应力的响应逐渐变化的特性的材料的电极间层，并形成第二电极在材料的电极间层之上。电极间层包括在第一和第二电极之间的介电层，例如超薄氧化物。可编程电阻或其他属性通过强调介电层来表示存储的数据来建立。存储器单元的实施例适于存储每个单元的多个数据位和/或适于在不进行擦除处理的情况下编程多于一次。

8. 发明授权

US09120700B2 Non-contact etching of moving glass sheets 有权
标题翻译：移动玻璃板的非接触蚀刻
公开(公告)号：US09120700B2
公开(公告)日：2015-09-01
申请号：US12732597
申请日：2010-03-26
申请人： Gautam Narendra Kudva , Chih Yuan Lu , Weiwei Luo , Yoshihiro Nakamura , Tetsuzou Yamada
发明人： Gautam Narendra Kudva , Chih Yuan Lu , Weiwei Luo , Yoshihiro Nakamura , Tetsuzou Yamada
IPC分类号： B32B3/00 , C03C15/00
CPC分类号： C03C15/00 , Y10T428/24355
摘要： Methods and apparatus are disclosed for etching flexible glass sheets (13) in which the sheets (13) are transported in a vertical or near vertical orientation past non-contact, liquid-ejecting bearings (3) which apply an etching solution (e.g., an aqueous NaF/H3PO4 solution) to one or both sides of the sheets (13). In certain embodiments, the uppermost liquid-ejecting bearing (3) is above the top edge of the sheet (13) and thus is able to apply etching solution to the top of the sheet. In other embodiments, a top shower (11), which includes a set of spray nozzles (21) located above and distributed along the length of the apparatus, is used to apply etching solution to the top of the sheet (13). Using the disclosed methods and apparatus, glass sheets (13) produced by a fusion process are provided which have areas greater than five square meters and average surface roughness values in the range of 0.5 nanometers to 1.1 nanometers.
摘要翻译：公开了用于蚀刻柔性玻璃板（13）的方法和装置，其中片材（13）以垂直或接近垂直取向通过非接触式液体喷射轴承（3）输送，该轴承（3）施加蚀刻溶液（例如， NaF / H 3 PO 4水溶液）到片材（13）的一侧或两侧。在某些实施例中，最上面的液体喷射轴承（3）在片材（13）的顶部边缘之上，因此能够将蚀刻溶液施加到片材的顶部。在其它实施例中，使用顶部喷淋器（11），其包括位于设备上方并沿着设备长度分布的一组喷嘴（21），以将蚀刻溶液施加到片材（13）的顶部。使用所公开的方法和装置，提供了通过熔融方法生产的玻璃板（13），其具有大于5平方米的面积，并且在0.5纳米至1.1纳米的范围内的平均表面粗糙度值。

9. 发明授权

US08535548B2 Non-contact etching of moving glass sheets 失效
标题翻译：移动玻璃板的非接触蚀刻
公开(公告)号：US08535548B2
公开(公告)日：2013-09-17
申请号：US13671883
申请日：2012-11-08
申请人： Gautam Narendra Kudva , Chih Yuan Lu , Weiwei Luo , Yoshihiro Nakamura , Tetsuzou Yamada
发明人： Gautam Narendra Kudva , Chih Yuan Lu , Weiwei Luo , Yoshihiro Nakamura , Tetsuzou Yamada
IPC分类号： B44C1/22
CPC分类号： C03C15/00 , Y10T428/24355
摘要： Methods and apparatus are disclosed for etching flexible glass sheets (13) in which the sheets (13) are transported in a near vertical orientation past non-contact, liquid-ejecting bearings (3) which apply an etching solution (e.g., an aqueous NaF/H3PO4 solution) to the sheets (13). In certain embodiments, the uppermost liquid-ejecting bearing (3) is above the top edge of the sheet (13) and thus is able to apply etching solution to the top of the sheet. In other embodiments, a top shower (11), which includes a set of spray nozzles (21) located above and distributed along the length of the apparatus, is used to apply etching solution to the top of the sheet (13). Using the disclosed methods and apparatus, glass sheets (13) produced by a fusion process are provided which have areas greater than five square meters and average surface roughness values in the range of 0.5 nanometers to 1.1 nanometers.
摘要翻译：公开了用于蚀刻柔性玻璃板（13）的方法和装置，其中片材（13）以接近垂直的方向输送通过非接触的液体喷射轴承（3），该轴承（3）施加蚀刻溶液（例如，NaF / H 3 PO 4溶液）。在某些实施例中，最上面的液体喷射轴承（3）在片材（13）的顶部边缘之上，因此能够将蚀刻溶液施加到片材的顶部。在其它实施例中，使用顶部喷淋器（11），其包括位于设备上方并沿着设备长度分布的一组喷嘴（21），以将蚀刻溶液施加到片材（13）的顶部。使用所公开的方法和装置，提供了通过熔融方法生产的玻璃板（13），其具有大于5平方米的面积，并且在0.5纳米至1.1纳米的范围内的平均表面粗糙度值。

10. 发明申请

US20110236630A1 Non-Contact Etching of Moving Glass Sheets 有权
标题翻译：移动玻璃板非接触蚀刻
公开(公告)号：US20110236630A1
公开(公告)日：2011-09-29
申请号：US12732597
申请日：2010-03-26
申请人： Gautam Narendra Kudva , Chih Yuan Lu , Weiwei Luo , Yoshihiro Nakamura , Tetsuzou Yamada
发明人： Gautam Narendra Kudva , Chih Yuan Lu , Weiwei Luo , Yoshihiro Nakamura , Tetsuzou Yamada
IPC分类号： C03C15/00 , B32B3/00
CPC分类号： C03C15/00 , Y10T428/24355
摘要： Methods and apparatus are disclosed for etching flexible glass sheets (13) in which the sheets (13) are transported in a vertical or near vertical orientation past non-contact, liquid-ejecting bearings (3) which apply an etching solution (e.g., an aqueous NaF/H3PO4 solution) to one or both sides of the sheets (13). In certain embodiments, the uppermost liquid-ejecting bearing (3) is above the top edge of the sheet (13) and thus is able to apply etching solution to the top of the sheet. In other embodiments, a top shower (11), which includes a set of spray nozzles (21) located above and distributed along the length of the apparatus, is used to apply etching solution to the top of the sheet (13). Using the disclosed methods and apparatus, glass sheets (13) produced by a fusion process are provided which have areas greater than five square meters and average surface roughness values in the range of 0.5 nanometers to 1.1 nanometers.
摘要翻译：公开了用于蚀刻柔性玻璃板（13）的方法和装置，其中片材（13）以垂直或接近垂直取向通过非接触式液体喷射轴承（3）输送，该轴承（3）施加蚀刻溶液（例如， NaF / H 3 PO 4水溶液）到片材（13）的一侧或两侧。在某些实施例中，最上面的液体喷射轴承（3）在片材（13）的顶部边缘之上，因此能够将蚀刻溶液施加到片材的顶部。在其它实施例中，使用顶部喷淋器（11），其包括位于设备上方并沿着设备长度分布的一组喷嘴（21），以将蚀刻溶液施加到片材（13）的顶部。使用所公开的方法和装置，提供了通过熔融方法生产的玻璃板（13），其具有大于5平方米的面积，并且在0.5纳米至1.1纳米的范围内的平均表面粗糙度值。

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