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1. 发明授权

US06201269B1 Junction field effect transistor and method of producing the same 失效
标题翻译：结场效应晶体管及其制造方法
公开(公告)号：US06201269B1
公开(公告)日：2001-03-13
申请号：US08458724
申请日：1995-06-02
申请人： Chiaki Takano , Hidetoshi Kawasaki , Masaru Wada
发明人： Chiaki Takano , Hidetoshi Kawasaki , Masaru Wada
IPC分类号： H01L2976
CPC分类号： H01L29/66924 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/0649 , H01L29/1066 , H01L29/808
摘要： For suppressing generation of leakage current and side-gate effect in a junction field effect transistor, a gate extension is formed on a semi-insulative compound semiconductor substrate in a manner to extend from a gate and to protrude outward beyond a channel transversely thereto, and an insulating layer is formed on the semi-insulative compound semiconductor substrate under the gate extension. A method of producing this transistor comprises the steps of first forming a channel and a source-drain on a substrate, then forming a gate on the channel together with a gate extension which extends from the gate and protrudes outward beyond the channel transversely thereto, and forming an insulating layer adjacently to the channel and the source-drain in such a manner that no gap is existent between the insulating layer and at least the channel.
摘要翻译：为了抑制结型场效应晶体管中的漏电流和侧栅效应的产生，在半绝缘化合物半导体基板上以从栅极延伸并向外突出超过横向通道的方式形成栅极延伸，以及在栅极延伸部分的半绝缘性化合物半导体基板上形成绝缘层。制造该晶体管的方法包括以下步骤：首先在衬底上形成沟道和源极 - 漏极，然后在沟道上形成栅极以及从栅极延伸并从其横向向外突出超过沟槽的栅极延伸，以及以与绝缘层和至少沟道之间不存在间隙的方式形成与沟道和源极 - 漏极相邻的绝缘层。

2. 发明授权

US07487521B2 Cartridge for photosensitive recording medium 失效
标题翻译：墨盒用于感光记录介质
公开(公告)号：US07487521B2
公开(公告)日：2009-02-03
申请号：US11315353
申请日：2005-12-23
申请人： Hidetoshi Kawasaki , Tetsuya Takatori
发明人： Hidetoshi Kawasaki , Tetsuya Takatori
IPC分类号： G11B23/03
CPC分类号： G11B23/0308 , B29C65/08 , B29C66/12441 , B29C66/12463 , B29C66/3022 , B29C66/54 , B29L2017/003 , G11B23/0021 , G11B23/0317
摘要： A cartridge is composed of a cartridge body and a shutter. A hologram recording disk is rotatably contained in a disk recess formed in the cartridge body. The shutter comprises upper and lower shutter plates between which the cartridge body is interposed. The shutter opens and closes openings formed in both surfaces of the cartridge body. When the shutter is kept in a closed position where the openings are closed, the edges of the shutter are inserted into slits formed around the opening. Further, a groove is formed at an end portion of the shutter. Into the groove, a ridge formed on the cartridge body is inserted.
摘要翻译：墨盒由墨盒本体和快门组成。全息记录盘被可旋转地容纳在形成在盒体中的盘形凹部中。快门包括上部和下部快门板，盒体之间插入有快门板。快门打开和关闭形成在盒体两个表面中的开口。当挡板保持在关闭开口的关闭位置时，挡板的边缘插入形成在开口周围的狭缝中。此外，在快门的端部形成有槽。插入到槽中，形成在盒体上的脊部被插入。

3. 发明申请

US20050120842A1 Cutting method of fabric material 失效
标题翻译：织物材料切割方法
公开(公告)号：US20050120842A1
公开(公告)日：2005-06-09
申请号：US11000985
申请日：2004-12-02
申请人： Hidetoshi Kawasaki , Ken Shimizu
发明人： Hidetoshi Kawasaki , Ken Shimizu
IPC分类号： G03C3/00 , B26D7/08 , B26D7/10 , C09J191/06 , C09J201/00
CPC分类号： B26D7/086 , B26D7/10 , Y10T83/041 , Y10T83/0414 , Y10T83/283
摘要： A fabric material has a base fabric, a pile layer on a surface of the base fabric, and an adhesive layer of a hot-melt adhesive on another surface of the base fabric. The adhesive layer contains a wax whose melting point Tm1 is from 20° C. to 50° C. lower than the melting point Tm2 of the base polymer. The fabric material is heated by a heating device to at least (Tm1+5)° C. and (Tm2−5)° C., and then cut by a ultrasonic wave cutter 23. Thus the fabric material can be cut without generating the chaff s of the adhesive agent and the fiber off scums. As a result, the pollution is not made in the cutting process, and the cutting of the fabric material is made continuously and stably. Without the adhesion of the chaffs, the teremp which has a good surface formed by the cutting.
摘要翻译：织物材料具有基底织物，基底织物的表面上的绒毛层，以及在基底织物的另一表面上的热熔粘合剂的粘合剂层。粘合剂层含有熔点Tm1比基体聚合物的熔点Tm 2低20℃〜50℃的蜡。将织物材料通过加热装置加热到至少（Tm 1 + 5）℃和（Tm 2 -5）℃，然后用超声波波切割机23切割。因此，可以切割织物材料，而不会产生粘合剂的谷壳和脱屑的纤维。结果，在切割过程中不会产生污染，并且连续稳定地切割织物材料。没有谷壳的粘附，通过切割形成的具有良好表面的颤音。

4. 发明申请

US20100189987A1 INJECTION-MOLDED ARTICLE OF A PET FIBER-REINFORCED POLYLACTIC ACID RESIN AND MANUFACTURING METHOD FOR THE SAME 审中-公开
标题翻译： PET纤维增强聚酰胺树脂的注射成型品及其制造方法
公开(公告)号：US20100189987A1
公开(公告)日：2010-07-29
申请号：US12669403
申请日：2008-07-11
申请人： Hidetoshi Kawasaki
发明人： Hidetoshi Kawasaki
IPC分类号： C08K7/14 , B29C44/04 , B29C45/00 , C08J5/00
CPC分类号： B29C45/0005 , B29K2105/126 , C08J5/046 , C08L67/02 , C08L67/04 , C08L2205/16 , Y10T428/249986 , C08L2666/18
摘要： Provided is a manufacturing method for injection-molded articles, comprising subjecting a resin composition for use in injection molding, which contains a polylactic acid resin and PET fibers with a lactic acid component content of 50% by weight or more, and is compounded at a compounding temperature of 230° C. or lower, to injection molding at an injection molding temperature of 190 to 230° C. to obtain a molded article of high strength in which voids around the PET fibers are 50% or less on the PET fibers in sectional area in the article's sections, and the PET fibers within the article are not deteriorated. The molded article has a higher strength than conventional, and is applicable as a constituent part for larger products with heavier weights, such as copying machines and printers.
摘要翻译：本发明提供一种注射成型品的制造方法，其特征在于，将含有聚乳酸树脂的注射成型用树脂组合物和乳酸成分含量为50重量％以上的PET纤维进行混合，复合温度为230℃以下，注塑成型温度为190〜230℃，得到PET纤维上的PET纤维周围的空隙为50％以下的高强度成形品制品的截面积，制品内的PET纤维不劣化。模制品具有比常规的强度更高的强度，并且作为复印机和打印机等重量较大的较大产品的组成部分适用。

5. 发明授权

US07536937B2 Cutting method of fabric material 失效
标题翻译：织物材料切割方法
公开(公告)号：US07536937B2
公开(公告)日：2009-05-26
申请号：US11000985
申请日：2004-12-02
申请人： Hidetoshi Kawasaki , Ken Shimizu
发明人： Hidetoshi Kawasaki , Ken Shimizu
IPC分类号： B26D7/10
CPC分类号： B26D7/086 , B26D7/10 , Y10T83/041 , Y10T83/0414 , Y10T83/283
摘要： A fabric material has a base fabric, a pile layer on a surface of the base fabric, and an adhesive layer of a hot-melt adhesive on another surface of the base fabric. The adhesive layer contains a wax whose melting point Tm1 is from 20° C. to 50° C. lower than the melting point Tm2 of the base polymer. The fabric material is heated by a heating device to at least (Tm1+5)° C. and (Tm2−5)° C., and then cut by a ultrasonic wave cutter 23. Thus the fabric material can be cut without generating the chaffs of the adhesive agent and the fiber offscums. As a result, the pollution is not made in the cutting process, and the cutting of the fabric material is made continuously and stably. Without the adhesion of the chaffs, the teremp which has a good surface formed by the cutting.
摘要翻译：织物材料具有基底织物，基底织物的表面上的绒毛层，以及在基底织物的另一表面上的热熔粘合剂的粘合剂层。粘合层含有熔点Tm1比基体聚合物的熔点Tm2低20℃〜50℃的蜡。将织物材料通过加热装置加热至至少（Tm1 + 5）℃和（Tm2-5）℃，然后用超声波切割器23切割。因此，可以切割织物材料而不产生粘合剂和纤维片的谷壳。结果，在切割过程中不会产生污染，并且连续稳定地切割织物材料。没有谷壳的粘附，通过切割形成的具有良好表面的颤音。

6. 发明申请

US20080028421A1 Cartridge for Photosensitive Recording Medium 审中-公开
标题翻译：墨盒用于感光记录介质
公开(公告)号：US20080028421A1
公开(公告)日：2008-01-31
申请号：US11721840
申请日：2005-12-22
申请人： Hidetoshi Kawasaki , Tetsuya Takatori
发明人： Hidetoshi Kawasaki , Tetsuya Takatori
IPC分类号： G11B23/03 , G03H1/04
CPC分类号： G11B23/0316 , G11B23/0308
摘要： A cartridge (2) is composed of a lower shell (30), an upper shell (31), a shutter 10 and a lock mechanism (11). A hologram recording disk (4) is rotatably contained in a disk recess (3) of a cartridge body (25) formed by joining the lower shell (30) and the upper shell (31). Inner surfaces of the lower shell (30) and the upper shell (31) are provided with a first concave portion (34), a second concave portion (35), a first convex portion (42) and a second convex portion (43). When the lower shell (30) and the upper shell (31) are joined, the concave portions and the convex portions engage to form a labyrinth-like light-shielding structure. In virtue of this, light and dust are prevented from entering through a gap residing between the lower shell (30) and the upper shell (31).
摘要翻译：盒（2）由下壳（30），上壳（31），闸板10和锁机构（11）构成。全息记录盘（4）可旋转地容纳在通过连接下壳体（30）和上壳体（31）形成的盒体（25）的盘凹槽（3）中。下壳体（30）和上壳体（31）的内表面设置有第一凹部（34），第二凹部（35），第一凸部（42）和第二凸部（43）。当下壳体（30）和上壳体（31）接合时，凹部和凸部接合形成迷宫状遮光结构。由此，防止了光和灰尘通过位于下壳体（30）和上壳体（31）之间的间隙进入。

7. 发明授权

US06365925B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06365925B2
公开(公告)日：2002-04-02
申请号：US09151584
申请日：1998-09-11
申请人： Ichiro Hase , Mitsuhiro Nakamura , Hidetoshi Kawasaki , Shinichi Wada
发明人： Ichiro Hase , Mitsuhiro Nakamura , Hidetoshi Kawasaki , Shinichi Wada
IPC分类号： H01L31072
CPC分类号： H01L29/7785
摘要： A semiconductor device that is easily operated with a single positive voltage supply and exhibits an excellent linearity of mutual conductance and source-gate capacitance with regard to a gate voltage is provided. The semiconductor device comprises a second barrier layer of AlGaAs, a channel layer of InGaAs and a first barrier layer of AlGaAs that are stacked in this order on a substrate of GaAs with a buffer layer of u-GaAs between the substrate and the second barrier layer. Carrier supply regions doped with n-type impurity are formed in part of the first and second barrier layers. A low resistivity region including a high concentration of p-type impurity (Zn) is formed in the first barrier layer. The low resistivity region is buried in a high resistivity region and brought to contact with a gate electrode. Upon an application of positive voltage to the gate electrode, a carrier deficient region disappears in the channel layer and no parasitic resistance component remains.
摘要翻译：提供了一种使用单个正电压电源容易操作且相对于栅极电压具有优异的互导线性和源极 - 栅极电容的半导体器件。半导体器件包括AlGaAs的第二阻挡层，InGaAs的沟道层和AlGaAs的第一势垒层，其依次层叠在具有衬底和第二势垒层之间的具有u-GaAs缓冲层的GaAs衬底上。在第一和第二阻挡层的一部分中形成掺杂有n型杂质的载流子供应区。在第一阻挡层中形成包含高浓度p型杂质（Zn）的低电阻率区域。低电阻率区域被埋在高电阻率区域中并与栅电极接触。当向栅极施加正电压时，载流子缺陷区域在沟道层中消失，并且不存在寄生电阻分量。

8. 发明申请

US20070052892A1 Rubbing apparatus and method for producing optical sheet 审中-公开
标题翻译：用于制造光学片的摩擦装置和方法
公开(公告)号：US20070052892A1
公开(公告)日：2007-03-08
申请号：US11514888
申请日：2006-09-05
申请人： Makoto Tanaka , Hidetoshi Kawasaki
发明人： Makoto Tanaka , Hidetoshi Kawasaki
IPC分类号： G02F1/1337
CPC分类号： G02F1/133784
摘要： The present invention provides a method for producing an optical sheet by using a rubbing method comprising running a belt-like flexible support and bringing a rotating rubbing roller into contact with a surface of the belt-like flexible support for performing an orientation process, wherein a rubbing cloth wound around a surface of the rubbing roller has a filament size of from 1.0 to 2.5 deniers. According to the present invention, it is possible to significantly reduce surface defects caused by poor orientation in the production of optical materials, in particular, in the production of optical compensation films.
摘要翻译：本发明提供了一种通过使用摩擦方法制造光学片的方法，包括使带状柔性支撑件运行并使旋转的摩擦辊与带状柔性支撑件的表面接触以进行取向过程，其中缠绕在摩擦辊表面的摩擦布具有1.0至2.5旦尼尔的丝尺寸。根据本发明，可以显着地减少在光学材料的制造中，特别是在制造光学补偿膜时由于取向不良而引起的表面缺陷。

9. 发明授权

US06652166B2 Photographic film cartridge 失效
公开(公告)号：US06652166B2
公开(公告)日：2003-11-25
申请号：US10328143
申请日：2002-12-26
申请人： Hidetoshi Kawasaki , Kazunori Mizuno
发明人： Hidetoshi Kawasaki , Kazunori Mizuno
IPC分类号： G03B1726
CPC分类号： G03B17/30 , G03B2217/265 , Y10T428/2395
摘要： A photographic film cartridge includes a light-shielding cloth. The light-shielding cloth is subjected to napping with a coarse napping machine and then napping with a fine napping machine. The napping machines have napper rollers including a pile roller and a counter roller. The rotational speed of the pile roller of the fine napping machine is higher than that of the pile roller of the coarse napping machine, and the rotational speed of the counter roller of the coarse napping machine is higher than that of the counter roller of the fine napping machine. The napping is carried out so that the cloth thickness obtained by the fine napping machine is less than the cloth thickness obtained by the coarse napping machine. A further napping is carried out using the fine napping machine so that the cloth thickness is greater than that obtained by the coarse napping machine.

10. 发明授权

US5900765A Bias circuit 失效
标题翻译：偏置电路
公开(公告)号：US5900765A
公开(公告)日：1999-05-04
申请号：US811948
申请日：1997-03-05
申请人： Hidetoshi Kawasaki , Takahiro Ohgihara
发明人： Hidetoshi Kawasaki , Takahiro Ohgihara
IPC分类号： G05F3/20 , H03F1/30 , G06G7/12
CPC分类号： G05F3/205 , H03F1/301
摘要： A transistor-bias voltage stabilizing circuit comprises a current saturating resistor connected in series to the output of an FET, the gate bias voltage of which is to be stabilized and a capacitor connected in parallel to the current saturating resistor. The transistor-bias voltage stabilizing circuit may comprise a voltage detecting circuit and a negative-feedback circuit connected between the input and output of an FET, the gate bias voltage of which is to be stabilized.
摘要翻译：晶体管偏置稳压电路包括与FET的输出串联连接的电流饱和电阻器，其栅极偏置电压将被稳定，并且电容器并联连接到电流饱和电阻器。晶体管偏压稳定电路可以包括电压检测电路和连接在FET的输入和输出之间的负反馈电路，其栅极偏置电压将被稳定。

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