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1. 发明申请

US20050258997A1 Analog buffer, display device having the same, and method of driving the same 有权
标题翻译：模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法
公开(公告)号：US20050258997A1
公开(公告)日：2005-11-24
申请号：US11122769
申请日：2005-05-05
申请人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
发明人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , H03F3/00 , H03F3/50 , H03F3/70 , H03K5/08 , H03K19/00 , H03M1/66
CPC分类号： G09G3/3688 , H03F3/005 , H03F3/505
摘要： An analog buffer, display device having the same and a method of drving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.
摘要翻译：提供了一种模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法。模拟缓冲器将模拟电压施加到负载。模拟缓冲器包括比较器和晶体管。比较器被配置为将从外部设备提供的输入电压与施加到负载的模拟电压进行比较。当模拟电压低于输入电压时，晶体管导通以对负载进行充电或导通，以在模拟电压高于输入电压时对负载进行放电，并且当模拟电压变得基本相同时，晶体管截止作为输入电压。

2. 发明授权

US07535467B2 Analog buffer, display device having the same, and method of driving the same 有权
标题翻译：模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法
公开(公告)号：US07535467B2
公开(公告)日：2009-05-19
申请号：US11122769
申请日：2005-05-05
申请人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
发明人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
IPC分类号： G09G5/00
CPC分类号： G09G3/3688 , H03F3/005 , H03F3/505
摘要： An analog buffer, display device having the same and a method of driving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.
摘要翻译：提供模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法。模拟缓冲器将模拟电压施加到负载。模拟缓冲器包括比较器和晶体管。比较器被配置为将从外部设备提供的输入电压与施加到负载的模拟电压进行比较。当模拟电压低于输入电压时，晶体管导通以对负载进行充电或导通，以在模拟电压高于输入电压时对负载进行放电，并且当模拟电压变得基本相同时，晶体管截止作为输入电压。

3. 发明授权

US09005697B2 Polysilicon thin film transistor array panel and manufacturing method thereof 有权
标题翻译：多晶硅薄膜晶体管阵列面板及其制造方法
公开(公告)号：US09005697B2
公开(公告)日：2015-04-14
申请号：US11866617
申请日：2007-10-03
申请人： Hyun-Jae Kim , Sook-Young Kang , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang
发明人： Hyun-Jae Kim , Sook-Young Kang , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang
IPC分类号： B05D7/00 , H01L27/12 , C30B13/24 , C30B29/06 , H01L21/20
CPC分类号： H01L21/02678 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , Y10T428/24273
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

4. 发明授权

US07223504B2 Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor 有权
标题翻译：结晶掩模，结晶方法和制造包括结晶半导体的薄膜晶体管的方法
公开(公告)号：US07223504B2
公开(公告)日：2007-05-29
申请号：US10993648
申请日：2004-11-19
申请人： Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
发明人： Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
IPC分类号： G03F1/00
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66757
摘要： A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.
摘要翻译：提供了一种用于将非晶硅转化为多晶硅的激光照明的结晶掩模，其包括：具有多个第一狭缝的多个透射区域，用于调节穿过掩模的激光照射的能量; 和不透明区域。

5. 发明授权

US06822703B2 Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof 有权
标题翻译：液晶显示器的多晶硅薄膜晶体管及其制造方法
公开(公告)号：US06822703B2
公开(公告)日：2004-11-23
申请号：US10128330
申请日：2002-04-24
申请人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
发明人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
IPC分类号： G02F1136
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136236 , H01L27/1214
摘要： A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. The TFT comprises an active pattern formed on a substrate, a gate insulating layer formed on the substrate including the active pattern, a gate line formed on the gate insulating layer to be crossed with the active pattern and including a gate electrode for defining the first impurity region, a second impurity region and a channel region, an insulating interlayer formed on the gate insulating layer including the gate line, a data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole which is formed through the gate insulating layer and the insulating interlayer on the second impurity region and a pixel electrode formed on the same insulating interlayer as the data line and connected with the first impurity region through a second contact hole which is formed through the gate insulating layer and the insulating interlayer on the first impurity region. The number of mask can be reduced to 5 or 6 sheets, thereby simplifying a manufacturing process.
摘要翻译：公开了一种用于LCD的多晶硅TFT及其制造方法。 TFT包括形成在基板上的有源图案，形成在包括有源图案的基板上的栅极绝缘层，形成在栅极绝缘层上以与有源图案交叉的栅极线，并且包括用于限定第一杂质的栅电极区域，第二杂质区域和沟道区域，在包括栅极线的栅极绝缘层上形成的绝缘夹层，形成在绝缘层间并通过第一接触孔连接到第二杂质区域的数据线，该第一接触孔通过栅绝缘层和第二杂质区上的绝缘中间层，以及形成在与数据线相同的绝缘夹层上的像素电极，并通过第二接触孔与第一杂质区连接，第二接触孔通过栅极绝缘层和绝缘中间层在第一杂质区域。掩模的数量可以减少到5张或6张，从而简化制造过程。

6. 发明授权

US07691545B2 Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor 有权
标题翻译：结晶掩模，结晶方法和制造包括结晶半导体的薄膜晶体管的方法
公开(公告)号：US07691545B2
公开(公告)日：2010-04-06
申请号：US11523932
申请日：2006-09-19
申请人： Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
发明人： Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
IPC分类号： G03F1/00
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/66757
摘要： A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.
摘要翻译：提供了一种用于将非晶硅转化为多晶硅的激光照明的结晶掩模，其包括：具有多个第一狭缝的多个透射区域，用于调节穿过掩模的激光照射的能量; 和不透明区域。

7. 发明申请

US20080115718A1 POLYSILICON THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：多晶硅薄膜晶体管阵列及其制造方法
公开(公告)号：US20080115718A1
公开(公告)日：2008-05-22
申请号：US11866617
申请日：2007-10-03
申请人： Hyun-Jae Kim , Sook-Young Kang , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang
发明人： Hyun-Jae Kim , Sook-Young Kang , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang
IPC分类号： C30B28/08 , B32B3/10
CPC分类号： H01L21/02678 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , Y10T428/24273
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

8. 发明授权

US07879700B2 Crystallization apparatus and method of amorphous silicon 有权
标题翻译：非晶硅结晶装置及方法
公开(公告)号：US07879700B2
公开(公告)日：2011-02-01
申请号：US10547070
申请日：2004-02-24
申请人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
发明人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
IPC分类号： H01L21/322 , H01L21/428
CPC分类号： B23K26/0676 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
摘要翻译：硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

9. 发明申请

US20070042575A1 Crystallization apparatus and method of amophous silicon 审中-公开
标题翻译：淀粉硅结晶装置及方法
公开(公告)号：US20070042575A1
公开(公告)日：2007-02-22
申请号：US10549334
申请日：2004-03-12
申请人： Su-Gyeong Lee , Dong-Byum Kim , Myung-Koo Kang , Ui-Jin Chung , Hyun-Jae Kim
发明人： Su-Gyeong Lee , Dong-Byum Kim , Myung-Koo Kang , Ui-Jin Chung , Hyun-Jae Kim
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/067 , B23K26/0673 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L21/268
摘要： A plurality laser beams generated by a plurality of beam generators are synthesized by a beam synthesizer. The synthesized beam is splitted into a plurality of beamlets and provided for a plurality of optical units controlling the beamlets. Each beamlet controlled by each optical unit is illuminated onto an amorphous silicon layer deposited on a substrate that is mounted on a plurality of stages to be polycrystallized.
摘要翻译：由多个光束发生器产生的多个激光束由光束合成器合成。合成的光束被分裂成多个子束并且被设置用于控制子束的多个光学单元。由每个光学单元控制的每个子束被照射到沉积在基板上的非晶硅层上，所述非晶硅层安装在多个阶段上以进行多晶化。

10. 发明申请

US20060148165A1 Crystallization apparatus and method of amorphous silicon 有权
标题翻译：非晶硅结晶装置及方法
公开(公告)号：US20060148165A1
公开(公告)日：2006-07-06
申请号：US10547070
申请日：2004-02-24
申请人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
发明人： Ui-Jin Chung , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang , Hyun-Jae Kim
IPC分类号： H01L21/8238
CPC分类号： B23K26/0676 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K2101/40 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
摘要翻译：硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

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