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    • 1. 发明授权
    • Thin film transistor substrate and liquid crystal display device having the same
    • 薄膜晶体管基板和具有该薄膜晶体管基板的液晶显示装置
    • US08223307B2
    • 2012-07-17
    • US12018576
    • 2008-01-23
    • Kyung-hoon KimKeun-woo ParkKook-chul MoonPil-mo ChoiChul-ho KimHo-suk MaengSang-hoon Lee
    • Kyung-hoon KimKeun-woo ParkKook-chul MoonPil-mo ChoiChul-ho KimHo-suk MaengSang-hoon Lee
    • G02F1/1345
    • G02F1/13454G02F1/136213
    • A liquid crystal display device with a display region and a non-display region surrounding the display region, the liquid crystal display device comprising: a first substrate; a second substrate which faces the first substrate; and a liquid crystal layer which is interposed between the first substrate and the second substrate, the first substrate comprising: a first insulating substrate; gate and data lines which are formed on the first insulating substrate and intersecting each other; a pixel thin film transistor formed on the display region and electrically connected to the gate and data lines; a pixel electrode electrically connected to the pixel thin film transistor; a gate driver formed on the non-display region and connected to the gate line to drive the gate line; and a direct current (DC)/DC converter formed on the non-display region and comprises a converter thin film transistor and a capacitance part; the capacitance part includes: a first capacitance part which comprises a first electrode, a first dielectric layer formed on the first electrode, and a second electrode formed on the first dielectric layer; and a second capacitance part which comprises the second electrode, a second dielectric layer formed on the second electrode, and a third electrode formed on the second dielectric layer.
    • 一种具有显示区域和围绕显示区域的非显示区域的液晶显示装置,所述液晶显示装置包括:第一基板; 面向所述第一基板的第二基板; 以及介于所述第一基板和所述第二基板之间的液晶层,所述第一基板包括:第一绝缘基板; 栅极和数据线,其形成在第一绝缘基板上并彼此交叉; 形成在所述显示区域上并电连接到所述栅极和数据线的像素薄膜晶体管; 与像素薄膜晶体管电连接的像素电极; 栅极驱动器,形成在非显示区域上并连接到栅极线以驱动栅极线; 以及形成在所述非显示区域上并包括转换器薄膜晶体管和电容部分的直流(DC)/ DC转换器; 所述电容部包括:第一电容部,其包括第一电极,形成在所述第一电极上的第一电介质层和形成在所述第一电介质层上的第二电极; 以及第二电容部,其包括所述第二电极,形成在所述第二电极上的第二电介质层和形成在所述第二电介质层上的第三电极。
    • 9. 发明申请
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US20060169984A1
    • 2006-08-03
    • US11337151
    • 2006-01-19
    • Kook-Chul MoonSoong-Yong JooIl-Gon KimTae-Hyeong Park
    • Kook-Chul MoonSoong-Yong JooIl-Gon KimTae-Hyeong Park
    • H01L29/04
    • H01L27/124G02F1/136213G02F1/136227G02F1/136286H01L27/1255
    • A thin film transistor array panel is provided. The array panel includes a storage capacitance that is substantially uniform, and allows for a relatively large capacitance in a relatively small area. In some embodiments, the panel includes: a substrate; a plurality of semiconductor regions on the substrate, including a plurality of source and drain regions doped with a first impurity type and a dummy region doped with a second impurity type, and an intrinsic region having storage and channel regions; a gate insulating layer covering at least a portion of the semiconductor regions; a gate line including a gate electrode at least partially overlapping the channel region and formed on the gate insulating layer; a storage line including a storage electrode at least partially overlapping the storage region and formed on the gate insulating layer; a data line including a source electrode connected to the source region and formed on the gate insulating layer; a drain electrode connected to the drain region and the dummy region and formed on the gate insulating layer; and a pixel electrode connected to the drain electrode.
    • 提供薄膜晶体管阵列面板。 阵列面板包括基本均匀的存储电容,并且允许在相对小的区域中具有相对大的电容。 在一些实施例中,面板包括:基底; 在衬底上的多个半导体区域,包括掺杂有第一杂质类型的多个源区和漏区以及掺杂有第二杂质的虚拟区,以及具有存储和沟道区的本征区; 覆盖所述半导体区域的至少一部分的栅极绝缘层; 栅极线,包括至少部分地与沟道区重叠并形成在栅极绝缘层上的栅电极; 存储线,包括至少部分地与所述存储区域重叠并形成在所述栅极绝缘层上的存储电极; 数据线,包括连接到所述源极区并形成在所述栅极绝缘层上的源电极; 连接到漏极区域和虚设区域并形成在栅极绝缘层上的漏电极; 以及连接到漏电极的像素电极。