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1. 发明授权

US06822703B2 Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof 有权
标题翻译：液晶显示器的多晶硅薄膜晶体管及其制造方法
公开(公告)号：US06822703B2
公开(公告)日：2004-11-23
申请号：US10128330
申请日：2002-04-24
申请人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
发明人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
IPC分类号： G02F1136
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136236 , H01L27/1214
摘要： A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. The TFT comprises an active pattern formed on a substrate, a gate insulating layer formed on the substrate including the active pattern, a gate line formed on the gate insulating layer to be crossed with the active pattern and including a gate electrode for defining the first impurity region, a second impurity region and a channel region, an insulating interlayer formed on the gate insulating layer including the gate line, a data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole which is formed through the gate insulating layer and the insulating interlayer on the second impurity region and a pixel electrode formed on the same insulating interlayer as the data line and connected with the first impurity region through a second contact hole which is formed through the gate insulating layer and the insulating interlayer on the first impurity region. The number of mask can be reduced to 5 or 6 sheets, thereby simplifying a manufacturing process.
摘要翻译：公开了一种用于LCD的多晶硅TFT及其制造方法。 TFT包括形成在基板上的有源图案，形成在包括有源图案的基板上的栅极绝缘层，形成在栅极绝缘层上以与有源图案交叉的栅极线，并且包括用于限定第一杂质的栅电极区域，第二杂质区域和沟道区域，在包括栅极线的栅极绝缘层上形成的绝缘夹层，形成在绝缘层间并通过第一接触孔连接到第二杂质区域的数据线，该第一接触孔通过栅绝缘层和第二杂质区上的绝缘中间层，以及形成在与数据线相同的绝缘夹层上的像素电极，并通过第二接触孔与第一杂质区连接，第二接触孔通过栅极绝缘层和绝缘中间层在第一杂质区域。掩模的数量可以减少到5张或6张，从而简化制造过程。

2. 发明授权

US07791076B2 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
标题翻译：具有三部分栅电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US07791076B2
公开(公告)日：2010-09-07
申请号：US12469256
申请日：2009-05-20
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸电路。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。

3. 发明申请

US20070108447A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管和液晶显示
公开(公告)号：US20070108447A1
公开(公告)日：2007-05-17
申请号：US11621277
申请日：2007-01-09
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L29/76 , H01L29/10 , H01L31/036 , H01L31/112
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

4. 发明授权

US07183574B2 Thin film transistor with gate electrode portion crossing grain growing direction and liquid crystal display comprising the same 有权
标题翻译：具有与晶粒生长方向交叉的栅电极部分的薄膜晶体管和包括其的液晶显示器
公开(公告)号：US07183574B2
公开(公告)日：2007-02-27
申请号：US10500514
申请日：2003-01-03
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

5. 发明申请

US20090224262A1 THIN FILM TRANSISTOR HAVING A THREE-PORTION GATE ELECTRODE AND LIQUID CRYSTAL DISPLAY USING THE SAME 有权
标题翻译：具有三部分门电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US20090224262A1
公开(公告)日：2009-09-10
申请号：US12469256
申请日：2009-05-20
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸电路。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。

6. 发明授权

US07538349B2 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
标题翻译：具有三部分栅电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US07538349B2
公开(公告)日：2009-05-26
申请号：US11621277
申请日：2007-01-09
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

7. 发明申请

US20050083445A1 Thin film transistor and liquid crystal display 有权
标题翻译：薄膜晶体管和液晶显示器
公开(公告)号：US20050083445A1
公开(公告)日：2005-04-21
申请号：US10500514
申请日：2003-01-03
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , H01L21/20 , H01L21/336 , H01L29/423 , H01L29/786 , H01L29/15
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

8. 发明申请

US20050258997A1 Analog buffer, display device having the same, and method of driving the same 有权
标题翻译：模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法
公开(公告)号：US20050258997A1
公开(公告)日：2005-11-24
申请号：US11122769
申请日：2005-05-05
申请人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
发明人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , H03F3/00 , H03F3/50 , H03F3/70 , H03K5/08 , H03K19/00 , H03M1/66
CPC分类号： G09G3/3688 , H03F3/005 , H03F3/505
摘要： An analog buffer, display device having the same and a method of drving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.
摘要翻译：提供了一种模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法。模拟缓冲器将模拟电压施加到负载。模拟缓冲器包括比较器和晶体管。比较器被配置为将从外部设备提供的输入电压与施加到负载的模拟电压进行比较。当模拟电压低于输入电压时，晶体管导通以对负载进行充电或导通，以在模拟电压高于输入电压时对负载进行放电，并且当模拟电压变得基本相同时，晶体管截止作为输入电压。

9. 发明授权

US07535467B2 Analog buffer, display device having the same, and method of driving the same 有权
标题翻译：模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法
公开(公告)号：US07535467B2
公开(公告)日：2009-05-19
申请号：US11122769
申请日：2005-05-05
申请人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
发明人： Cheol-Min Kim , Hyun-Jae Kim , Il-Gon Kim , Kook-Chul Moon , Chul-Ho Kim , Kee-Chan Park , Su-Gyeong Lee , Tae-Hyeong Park , Jin-Young Choi , Hyun-Sook Shim , Oh-Kyong Kwon
IPC分类号： G09G5/00
CPC分类号： G09G3/3688 , H03F3/005 , H03F3/505
摘要： An analog buffer, display device having the same and a method of driving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.
摘要翻译：提供模拟缓冲器，具有该模拟缓冲器的显示装置及其驱动方法。模拟缓冲器将模拟电压施加到负载。模拟缓冲器包括比较器和晶体管。比较器被配置为将从外部设备提供的输入电压与施加到负载的模拟电压进行比较。当模拟电压低于输入电压时，晶体管导通以对负载进行充电或导通，以在模拟电压高于输入电压时对负载进行放电，并且当模拟电压变得基本相同时，晶体管截止作为输入电压。

10. 发明授权

US09005697B2 Polysilicon thin film transistor array panel and manufacturing method thereof 有权
标题翻译：多晶硅薄膜晶体管阵列面板及其制造方法
公开(公告)号：US09005697B2
公开(公告)日：2015-04-14
申请号：US11866617
申请日：2007-10-03
申请人： Hyun-Jae Kim , Sook-Young Kang , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang
发明人： Hyun-Jae Kim , Sook-Young Kang , Dong-Byum Kim , Su-Gyeong Lee , Myung-Koo Kang
IPC分类号： B05D7/00 , H01L27/12 , C30B13/24 , C30B29/06 , H01L21/20
CPC分类号： H01L21/02678 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , Y10T428/24273
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

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