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1. 发明授权

US06822703B2 Polycrystalline silicon thin film transistor of liquid crystal display and manufacturing method thereof 有权
标题翻译：液晶显示器的多晶硅薄膜晶体管及其制造方法
公开(公告)号：US06822703B2
公开(公告)日：2004-11-23
申请号：US10128330
申请日：2002-04-24
申请人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
发明人： Chang-Won Hwang , Woo-Suk Chung , Tae-Hyeong Park , Hyun-Jae Kim , Gyu-Sun Moon , Sook-Young Kang
IPC分类号： G02F1136
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136236 , H01L27/1214
摘要： A polycrystalline silicon TFT for an LCD and a manufacturing method thereof is disclosed. The TFT comprises an active pattern formed on a substrate, a gate insulating layer formed on the substrate including the active pattern, a gate line formed on the gate insulating layer to be crossed with the active pattern and including a gate electrode for defining the first impurity region, a second impurity region and a channel region, an insulating interlayer formed on the gate insulating layer including the gate line, a data line formed on the insulating interlayer and connected to the second impurity region through the first contact hole which is formed through the gate insulating layer and the insulating interlayer on the second impurity region and a pixel electrode formed on the same insulating interlayer as the data line and connected with the first impurity region through a second contact hole which is formed through the gate insulating layer and the insulating interlayer on the first impurity region. The number of mask can be reduced to 5 or 6 sheets, thereby simplifying a manufacturing process.
摘要翻译：公开了一种用于LCD的多晶硅TFT及其制造方法。 TFT包括形成在基板上的有源图案，形成在包括有源图案的基板上的栅极绝缘层，形成在栅极绝缘层上以与有源图案交叉的栅极线，并且包括用于限定第一杂质的栅电极区域，第二杂质区域和沟道区域，在包括栅极线的栅极绝缘层上形成的绝缘夹层，形成在绝缘层间并通过第一接触孔连接到第二杂质区域的数据线，该第一接触孔通过栅绝缘层和第二杂质区上的绝缘中间层，以及形成在与数据线相同的绝缘夹层上的像素电极，并通过第二接触孔与第一杂质区连接，第二接触孔通过栅极绝缘层和绝缘中间层在第一杂质区域。掩模的数量可以减少到5张或6张，从而简化制造过程。

2. 发明申请

US20090224262A1 THIN FILM TRANSISTOR HAVING A THREE-PORTION GATE ELECTRODE AND LIQUID CRYSTAL DISPLAY USING THE SAME 有权
标题翻译：具有三部分门电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US20090224262A1
公开(公告)日：2009-09-10
申请号：US12469256
申请日：2009-05-20
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸电路。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。

3. 发明申请

US20050083445A1 Thin film transistor and liquid crystal display 有权
标题翻译：薄膜晶体管和液晶显示器
公开(公告)号：US20050083445A1
公开(公告)日：2005-04-21
申请号：US10500514
申请日：2003-01-03
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , H01L21/20 , H01L21/336 , H01L29/423 , H01L29/786 , H01L29/15
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

4. 发明授权

US07183574B2 Thin film transistor with gate electrode portion crossing grain growing direction and liquid crystal display comprising the same 有权
标题翻译：具有与晶粒生长方向交叉的栅电极部分的薄膜晶体管和包括其的液晶显示器
公开(公告)号：US07183574B2
公开(公告)日：2007-02-27
申请号：US10500514
申请日：2003-01-03
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

5. 发明授权

US07538349B2 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
标题翻译：具有三部分栅电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US07538349B2
公开(公告)日：2009-05-26
申请号：US11621277
申请日：2007-01-09
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

6. 发明授权

US07791076B2 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same 有权
标题翻译：具有三部分栅电极的薄膜晶体管和使用其的液晶显示器
公开(公告)号：US07791076B2
公开(公告)日：2010-09-07
申请号：US12469256
申请日：2009-05-20
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L21/00
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸电路。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。

7. 发明申请

US20070108447A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管和液晶显示
公开(公告)号：US20070108447A1
公开(公告)日：2007-05-17
申请号：US11621277
申请日：2007-01-09
申请人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
发明人： Myung-Koo Kang , Hyun-Jae Kim , Sook-Young Kang , Woo-Suk Chung
IPC分类号： H01L29/76 , H01L29/10 , H01L31/036 , H01L31/112
CPC分类号： H01L29/42384 , G02F1/13454 , G02F2202/104 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display according to the present invention, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.
摘要翻译：本发明涉及薄膜晶体管和液晶显示器。栅电极被形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动电路的尺寸。根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。栅极绝缘层覆盖半导体图案。在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。在根据本发明的液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分以方向与晶粒生长方向交叉，并且多个薄膜晶体管中的至少一个具有与其它薄膜晶体管不同的图案的栅电极。

8. 发明申请

US20060044488A1 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060044488A1
公开(公告)日：2006-03-02
申请号：US10534785
申请日：2003-11-14
申请人： Chang-Won Hwang , Woo-Suk Chung
发明人： Chang-Won Hwang , Woo-Suk Chung
IPC分类号： G02F1/1333
CPC分类号： H01L27/124
摘要： A thin film transistor array panel includes: an insulating substrate (110); first and second semiconductor members (151 a,b) formed on the substrate and having opposite conductivity; a first gate member (121a) insulated from the first and the second semiconductor members and overlapping one of the first and the second semiconductor members; a second gate member (122a) formed on the same layer as the first gate member (121a), separated from the first gate member, and insulated from the first and the second semiconductor members (151 a,b), the second gate member (122a) not overlapping the first and the second semiconductor members; a first data member (162) connected to one of the first and the second semiconductor members (151 a,b) and insulated from the first (121a) and the second (122a) gate members; and a first connection (123) formed on the same layer as the first data member and connecting the first gate member (121a) and the second gate member (122a).
摘要翻译：薄膜晶体管阵列面板包括：绝缘基板（110）; 形成在基板上并具有相反导电性的第一和第二半导体部件（151a，b）与第一和第二半导体部件绝缘并与第一和第二半导体部件中的一个重叠的第一栅极部件（121a）形成在与第一栅极部件（121a）相同的层上与第一栅极部件分离并与第一和第二半导体部件（151a，b）绝缘的第二栅极部件（122a），第二栅极构件（122a）不与第一和第二半导体构件重叠; 第一数据构件（162），其连接到所述第一和第二半导体构件（151a，b）中的一个并与所述第一（121a）和第二（122a）门构件绝缘; 以及形成在与第一数据构件相同的层上并连接第一门构件（121a）和第二门构件（122a）的第一连接（123）。

9. 发明授权

US07315044B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07315044B2
公开(公告)日：2008-01-01
申请号：US10534785
申请日：2003-11-14
申请人： Chang-Won Hwang , Woo-Suk Chung
发明人： Chang-Won Hwang , Woo-Suk Chung
IPC分类号： H01L29/04
CPC分类号： H01L27/124
摘要： A thin film transistor (TFT) array panel includes: an insulating substrate (110); first and second semiconductor members (151 a,b) formed on the substrate and having opposite conductivity; a first gate member (121a) formed on a first layer (140), insulated from the first and the second semiconductor members and overlapping one of the first and the second semiconductor members; a second gate member (122a) formed on the first layer (140), separated from the first gate member, and insulated from the first and the second semiconductor members (151 a,b), the second gate member (122a) not overlapping the first and the second semiconductor members; a first data member (162) formed on a second layer (160), connected to one of the first and the second semiconductor members (151 a,b) and insulated from the first (121a) and the second (122a) gate members; and a first connection (123) formed on the second layer (160) and connecting the first gate member (121a) and the second gate member (122a).
摘要翻译：薄膜晶体管（TFT）阵列面板包括：绝缘基板（110）; 形成在基板上并具有相反导电性的第一和第二半导体部件（151a，b）形成在第一层（140）上的与第一和第二半导体部件绝缘并且与第一和第二半导体部件中的一个重叠的第一栅极部件（121a）形成在第一层（140）上的与第一栅极部件分离并与第一和第二半导体部件（151a，b）绝缘的第二栅极部件（122a），第二栅极部件（122a）与第一和第二半导体部件重叠; 形成在第二层（160）上的第一数据构件（162），其连接到第一和第二半导体构件（151a，b）中的一个并与第一（121a）和第二（122a）门绝缘会员以及形成在所述第二层（160）上并连接所述第一门构件（121a）和所述第二门构件（122a）的第一连接件（123）。

10. 发明授权

US06836299B2 TFT LCD device having multi-layered pixel electrodes 有权
标题翻译：具有多层像素电极的TFT LCD装置
公开(公告)号：US06836299B2
公开(公告)日：2004-12-28
申请号：US09911613
申请日：2001-07-25
申请人： Woo-Suk Chung , Chang-Won Hwang
发明人： Woo-Suk Chung , Chang-Won Hwang
IPC分类号： G02F1136
CPC分类号： G02F1/13439 , G02F1/136227 , G02F1/1368 , G02F2203/02 , H01L27/124 , H01L29/458
摘要： In a TFT LCD device comprising a substrate, at least one thin film transistor formed on the substrate, having a source electrode and a drain electrode, an insulating layer formed over the whole surface of the substrate on which the thin film transistor is formed, having at least one contact hole exposing a portion of the drain electrode, and reflective layer pixel electrode corresponding to the thin film transistor, formed on the insulating layer to be connected with the drain electrode through the contact hole, the pixel electrode is formed of a multi-layered conductive layer. The drain electrode is composed of multiple layers, and the most upper layer of the multiple layers is one selected from a Cr layer and a MoW layer. Preferably, the multi-layered conductive layer is composed of two-layered conductive layer having a lower layer of the same material as that of the most upper layer and an upper layer of Al-containing metal.
摘要翻译：在包括衬底的TFT LCD器件中，形成在衬底上的至少一个薄膜晶体管，具有源电极和漏极，在形成有薄膜晶体管的衬底的整个表面上形成的绝缘层，具有至少一个露出漏电极的一部分的接触孔和与薄膜晶体管相对应的反射层像素电极，形成在绝缘层上，以通过接触孔与漏电极连接，像素电极由多层导电层。漏电极由多层组成，多层最上层是选自Cr层和MoW层。优选地，多层导电层由具有与最上层相同材料的下层和含Al金属的上层的两层导电层组成。

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