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1. 发明授权

US07989904B2 Micro-electromechanical device and manufacturing method thereof 有权
标题翻译：微机电装置及其制造方法
公开(公告)号：US07989904B2
公开(公告)日：2011-08-02
申请号：US12016889
申请日：2008-01-18
申请人： Cheng-Chang Lee , Horng-Jou Wang , Zong-Ting Yuan , Chao-Jui Liang , Hsieh-Shen Hsieh , Huang-Kun Chen , Tai-Kang Shing
发明人： Cheng-Chang Lee , Horng-Jou Wang , Zong-Ting Yuan , Chao-Jui Liang , Hsieh-Shen Hsieh , Huang-Kun Chen , Tai-Kang Shing
IPC分类号： H01L27/14
CPC分类号： B81C1/0019
摘要： A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.
摘要翻译：微机电器件包括衬底，第一图案化导电层，第二图案化导电层和第一图案化阻挡层。第一图案化导电层设置在基板上。第二图案化导电层设置在第一图案化导电层上。第一图案化阻挡层与第一图案化导电层和第二图案化导电层连接。此外，还公开了一种制造微机电装置的方法。

2. 发明授权

US07884624B2 Capacitance sensing structure 有权
标题翻译：电容感测结构
公开(公告)号：US07884624B2
公开(公告)日：2011-02-08
申请号：US11956527
申请日：2007-12-14
申请人： Horng-Jou Wang , Hsieh-Shen Hsieh , Chao-Jui Liang , Cheng-Chang Lee , Chao-Qing Wang , Zong-Ting Yuan , Huang-Kun Chen , Tai-Kang Shing
发明人： Horng-Jou Wang , Hsieh-Shen Hsieh , Chao-Jui Liang , Cheng-Chang Lee , Chao-Qing Wang , Zong-Ting Yuan , Huang-Kun Chen , Tai-Kang Shing
IPC分类号： G01R27/26
CPC分类号： G01P15/125 , G01C19/5755 , G01C19/5769 , G01P15/18
摘要： A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.
摘要翻译：电容感测结构包括衬底，感测电极层，至少一个堆叠层和导电体。感测电极层形成在衬底上或衬底中。堆叠层形成在感测电极层上。导电体设置在感测电极层和堆叠层之上并对应于感测电极层和堆叠层。

3. 发明申请

US20080217787A1 MICRO-ELECTROMECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：微机电装置及其制造方法
公开(公告)号：US20080217787A1
公开(公告)日：2008-09-11
申请号：US12016889
申请日：2008-01-18
申请人： Cheng-Chang LEE , Horng-Jou Wang , Zong-Ting Yuan , Chao-Jui Liang , Hsieh-Shen Hsieh , Huang-Kun Chen , Tai-Kang Shing
发明人： Cheng-Chang LEE , Horng-Jou Wang , Zong-Ting Yuan , Chao-Jui Liang , Hsieh-Shen Hsieh , Huang-Kun Chen , Tai-Kang Shing
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： B81C1/0019
摘要： A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.
摘要翻译：微机电器件包括衬底，第一图案化导电层，第二图案化导电层和第一图案化阻挡层。第一图案化导电层设置在基板上。第二图案化导电层设置在第一图案化导电层上。第一图案化阻挡层与第一图案化导电层和第二图案化导电层连接。此外，还公开了一种制造微机电装置的方法。

4. 发明申请

US20080150554A1 CAPACITANCE SENSING STRUCTURE 有权
标题翻译：电容传感结构
公开(公告)号：US20080150554A1
公开(公告)日：2008-06-26
申请号：US11956527
申请日：2007-12-14
申请人： Horng-Jou WANG , Hsieh-Shen Hsieh , Chao-Jui Liang , Cheng-Chang Lee , Chao-Qing Wang , Zong-Ting Yuan , Huang-Kun Chen , Tai-Kang Shing
发明人： Horng-Jou WANG , Hsieh-Shen Hsieh , Chao-Jui Liang , Cheng-Chang Lee , Chao-Qing Wang , Zong-Ting Yuan , Huang-Kun Chen , Tai-Kang Shing
IPC分类号： G01R27/26
CPC分类号： G01P15/125 , G01C19/5755 , G01C19/5769 , G01P15/18
摘要： A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.
摘要翻译：电容感测结构包括衬底，感测电极层，至少一个堆叠层和导电体。感测电极层形成在衬底上或衬底中。堆叠层形成在感测电极层上。导电体设置在感测电极层和堆叠层之上并对应于感测电极层和堆叠层。

5. 发明授权

US07448278B2 Semiconductor piezoresistive sensor and operation method thereof 有权
标题翻译：半导体压阻传感器及其操作方法
公开(公告)号：US07448278B2
公开(公告)日：2008-11-11
申请号：US11643661
申请日：2006-12-22
申请人： Hsieh-Shen Hsieh , Heng-Chung Chang , Cheng-Chang Lee , Chao-Jui Liang , Huang-Kun Chen , Tai-Kang Shing
发明人： Hsieh-Shen Hsieh , Heng-Chung Chang , Cheng-Chang Lee , Chao-Jui Liang , Huang-Kun Chen , Tai-Kang Shing
IPC分类号： G01L9/00
CPC分类号： G01L9/0054
摘要： A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.
摘要翻译：与电路电连接的半导体压阻传感器包括半导体基底，至少一个压阻元件和导电层。半导体基座包括隔膜和基座。底座设置在隔膜周围和周围。压电元件形成在隔膜中并与电路电连接。导电层与隔膜电连接。

6. 发明申请

US20070148788A1 Semiconductor piezoresistive sensor and operation method thereof 有权
标题翻译：半导体压阻传感器及其操作方法
公开(公告)号：US20070148788A1
公开(公告)日：2007-06-28
申请号：US11643661
申请日：2006-12-22
申请人： Hsieh-Shen Hsieh , Heng-Chung Chang , Cheng-Chang Lee , Chao-Jui Liang , Huang-Kun Chen , Tai-Kang Shing
发明人： Hsieh-Shen Hsieh , Heng-Chung Chang , Cheng-Chang Lee , Chao-Jui Liang , Huang-Kun Chen , Tai-Kang Shing
IPC分类号： H01L21/00 , G01L19/04
CPC分类号： G01L9/0054
摘要： A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.
摘要翻译：与电路电连接的半导体压阻传感器包括半导体基底，至少一个压阻元件和导电层。半导体基座包括隔膜和基座。底座设置在隔膜周围和周围。压电元件形成在隔膜中并与电路电连接。导电层与隔膜电连接。

7. 发明申请

US20070144258A1 Accelerometer 失效
标题翻译：加速度计
公开(公告)号：US20070144258A1
公开(公告)日：2007-06-28
申请号：US11591617
申请日：2006-11-02
申请人： Chia-Yi Chu , Heng-Chung Chang , Chuan-Wei Wang , Chih-Ming Sun , Wei-Leun Fang , Shiang-Cheng Lu , Hsieh-Shen Hsieh , Horng-Jou Wang , Tai-Kang Shing , Huang-Kun Chen
发明人： Chia-Yi Chu , Heng-Chung Chang , Chuan-Wei Wang , Chih-Ming Sun , Wei-Leun Fang , Shiang-Cheng Lu , Hsieh-Shen Hsieh , Horng-Jou Wang , Tai-Kang Shing , Huang-Kun Chen
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： An accelerometer includes a fixing unit and a movable unit. The fixing unit has a plurality of first electrode parts and a plurality of second electrode parts. The movable unit is connected with the fixing unit and includes a body having an opening, a plurality of third electrode parts and a plurality of fourth electrode parts. The third electrode parts are disposed at an outer side of the body with respect to the first electrode parts, respectively. The fourth electrode parts are disposed at the inner side of the body in the opening, and are disposed respectively with respect to the second electrode parts, respectively.
摘要翻译：加速度计包括固定单元和可移动单元。固定单元具有多个第一电极部分和多个第二电极部分。可移动单元与固定单元连接，并且包括具有开口的主体，多个第三电极部分和多个第四电极部分。第三电极部分分别相对于第一电极部分设置在主体的外侧。第四电极部分设置在开口内的主体的内侧，分别相对于第二电极部分设置。

8. 发明授权

US07412888B2 Accelerometer 失效
标题翻译：加速度计
公开(公告)号：US07412888B2
公开(公告)日：2008-08-19
申请号：US11591617
申请日：2006-11-02
申请人： Chia-Yi Chu , Heng-Chung Chang , Chuan-Wei Wang , Chih-Ming Sun , Wei-Leun Fang , Shiang-Cheng Lu , Hsieh-Shen Hsieh , Horng-Jou Wang , Tai-Kang Shing , Huang-Kun Chen
发明人： Chia-Yi Chu , Heng-Chung Chang , Chuan-Wei Wang , Chih-Ming Sun , Wei-Leun Fang , Shiang-Cheng Lu , Hsieh-Shen Hsieh , Horng-Jou Wang , Tai-Kang Shing , Huang-Kun Chen
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： An accelerometer includes a fixing unit and a movable unit. The fixing unit has a plurality of first electrode parts and a plurality of second electrode parts. The movable unit is connected with the fixing unit and includes a body having an opening, a plurality of third electrode parts and a plurality of fourth electrode parts. The third electrode parts are disposed at an outer side of the body with respect to the first electrode parts, respectively. The fourth electrode parts are disposed at the inner side of the body in the opening, and are disposed respectively with respect to the second electrode parts, respectively.
摘要翻译：加速度计包括固定单元和可移动单元。固定单元具有多个第一电极部分和多个第二电极部分。可移动单元与固定单元连接，并且包括具有开口的主体，多个第三电极部分和多个第四电极部分。第三电极部分分别相对于第一电极部分设置在主体的外侧。第四电极部分设置在开口内的主体的内侧，分别相对于第二电极部分设置。

9. 发明申请

US20120056223A1 LED PACKAGE STRUCTURE AND PACKAGING METHOD THEREOF 审中-公开
标题翻译： LED封装结构及其封装方法
公开(公告)号：US20120056223A1
公开(公告)日：2012-03-08
申请号：US13103986
申请日：2011-05-09
申请人： Hsieh-Shen Hsieh , Chao-Min Chen , Li-Fan Lin , Shih-Peng Chen , Huang-Kun Chen
发明人： Hsieh-Shen Hsieh , Chao-Min Chen , Li-Fan Lin , Shih-Peng Chen , Huang-Kun Chen
IPC分类号： H01L33/50 , H01L33/48 , H01L33/62
CPC分类号： H01L33/62 , H01L24/24 , H01L33/50 , H01L33/54 , H01L33/60 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73267 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15153 , H01L2924/15787 , H01L2924/15788 , H01L2924/3025 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
摘要： A LED package structure includes a supporting substrate, a first electrically-conductive structure, a LED chip, an insulating layer and a second electrically-conductive structure. The supporting substrate includes a top surface, a bottom surface and a first channel. The first electrically-conductive structure is filled in the first channel and partially formed on the top and bottom surfaces of the supporting substrate. The LED chip is disposed over the supporting substrate. The insulating layer is formed over the supporting substrate and on bilateral sides of the LED chip. The insulating layer has a second channel corresponding to the first electrically-conductive structure. The second electrically-conductive structure is filled in the second channel and partially formed on the insulating layer, and connected with an electrode of the LED chip. The LED chip and the top and bottom surfaces of the supporting substrate are connected with each other through the first and second electrically-conductive structures.
摘要翻译： LED封装结构包括支撑衬底，第一导电结构，LED芯片，绝缘层和第二导电结构。支撑基板包括顶表面，底表面和第一通道。第一导电结构填充在第一通道中，并部分地形成在支撑基板的顶表面和底表面上。 LED芯片设置在支撑基板上。绝缘层形成在支撑基板上和LED芯片的双侧上。绝缘层具有对应于第一导电结构的第二通道。第二导电结构填充在第二通道中，并部分地形成在绝缘层上，并与LED芯片的电极连接。 LED芯片和支撑基板的顶表面和底表面通过第一和第二导电结构相互连接。

10. 发明申请

US20130139593A1 INERTIAL SENSOR WITH STRESS ISOLATION STRUCTURE 审中-公开
标题翻译：具有应力隔离结构的惯性传感器
公开(公告)号：US20130139593A1
公开(公告)日：2013-06-06
申请号：US13480884
申请日：2012-05-25
申请人： Hsieh-Shen Hsieh , Wei-leun Fang
发明人： Hsieh-Shen Hsieh , Wei-leun Fang
IPC分类号： G01P15/00
CPC分类号： G01P15/09 , G01P15/123 , G01P15/125 , G01P15/18 , G01P2015/0814 , G01P2015/0842
摘要： An inertial sensor with stress isolation structure includes a substrate, a suspension bridge, a guard ring and an electromechanical conversion mechanism. The substrate has a housing trough and an annular wall surrounding the housing trough. The suspension bridge is located in the housing trough and connected to the annular wall. The guard ring is connected to the suspension bridge and suspended in the housing trough. The suspension bridge is located between the substrate and guard ring. The electromechanical conversion mechanism is connected to and surrounded by the guard ring. Through the guard ring, interferences of applied forces to the electromechanical conversion mechanism can be reduced, precision of the inertial sensor can be improved, and performance impact caused by succeeding element package process can also be reduced. Thus package, test and calibration processes can be simplified to lower production cost.
摘要翻译：具有应力隔离结构的惯性传感器包括基板，吊桥，保护环和机电转换机构。衬底具有壳体槽和围绕壳体槽的环形壁。吊桥位于外壳槽中并与环形壁连接。防护环连接到吊桥并悬挂在外壳槽中。吊桥位于基板和防护环之间。机电转换机构连接保护环并被保护环围绕。通过防护环，可以降低对机电转换机构的施加力的干扰，可以提高惯性传感器的精度，并且还可以降低由元件封装过程引起的性能影响。因此，可以简化封装，测试和校准过程，以降低生产成本。

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