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1. 发明授权

US06934040B1 Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers 有权
标题翻译：用于测量诸如半导体晶片的物体的层厚度和其它表面特性的光学技术
公开(公告)号：US06934040B1
公开(公告)日：2005-08-23
申请号：US10672558
申请日：2003-09-26
申请人： Charles W. Schietinger , Anh N. Hoang , Dmitry V. Bakin
发明人： Charles W. Schietinger , Anh N. Hoang , Dmitry V. Bakin
IPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/06 , G01N21/47 , G01B11/28
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0625 , G01N21/4738
摘要： A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).
摘要翻译：通过用广角的光学辐射照射表面并且接收从取决于照明角度的延伸的角度接收从表面反射的辐射来测量表面的特性。对于表面进行发射率测量，或者如果进行反射率测量，则其变得更准确。一种应用是测量一层或多层的厚度，即由透明材料或金属层制成的层。一种或多种波长技术允许对层厚度进行非常精确的测量。通过以这样的噪声为最小或不存在的频率调制辐射源来最小化来自环境辐射的噪声。在处理表面期间可以进行测量，以便能够精确地控制半导体晶片，平板显示器或其他物品的处理。主要应用是通过化学机械抛光（CMP）原位监测膜厚减少。

2. 发明授权

US06654132B1 Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers 有权
标题翻译：用于测量诸如半导体晶片的物体的层厚度和其它表面特性的光学技术
公开(公告)号：US06654132B1
公开(公告)日：2003-11-25
申请号：US09577795
申请日：2000-05-24
申请人： Charles W. Schietinger , Anh N. Hoang , Dmitry V. Bakin
发明人： Charles W. Schietinger , Anh N. Hoang , Dmitry V. Bakin
IPC分类号： G01B1128
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0625 , G01N21/4738
摘要： A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).
摘要翻译：通过用广角的光学辐射照射表面并且接收从取决于照明角度的延伸的角度接收从表面反射的辐射来测量表面的特性。对于表面进行发射率测量，或者如果进行反射率测量，则其变得更准确。一种应用是测量一层或多层的厚度，即由透明材料或金属层制成的层。一种或多种波长技术允许对层厚度进行非常精确的测量。通过以这样的噪声为最小或不存在的频率调制辐射源来最小化来自环境辐射的噪声。在处理表面期间可以进行测量，以便能够精确地控制半导体晶片，平板显示器或其他物品的处理。主要应用是通过化学机械抛光（CMP）原位监测膜厚减少。

3. 发明授权

US07042581B2 Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers 有权
公开(公告)号：US07042581B2
公开(公告)日：2006-05-09
申请号：US11013070
申请日：2004-12-15
申请人： Charles W. Schietinger , Anh N. Hoang , Dmitry V. Bakin
发明人： Charles W. Schietinger , Anh N. Hoang , Dmitry V. Bakin
IPC分类号： G01B11/28 , G01B11/02
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0625 , G01N21/4738
摘要： A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).

4. 发明授权

US06570662B1 Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers 有权
标题翻译：用于测量诸如半导体晶片的物体的层厚度和其它表面特性的光学技术
公开(公告)号：US06570662B1
公开(公告)日：2003-05-27
申请号：US09317697
申请日：1999-05-24
申请人： Charles W. Schietinger , Ahn N. Hoang
发明人： Charles W. Schietinger , Ahn N. Hoang
IPC分类号： G01B1128
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0625 , G01N21/4738
摘要： A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over a wide angle. An emissivity measurement can then be made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).
摘要翻译：表面的特征是通过用广角的光辐射照射该表面并且在广角上接收从表面反射的辐射来测量的。然后可以对表面进行发射率测量，或者，如果进行反射率测量，则其变得更准确。一种应用是测量一层或多层的厚度，即由透明材料或金属层制成的层。一种或多种波长技术允许对层厚度进行非常精确的测量。通过以这样的噪声为最小或不存在的频率调制辐射源来最小化来自环境辐射的噪声。在处理表面期间可以进行测量，以便能够精确地控制半导体晶片，平板显示器或其他物品的处理。主要应用是通过化学机械抛光（CMP）原位监测膜厚减少。

5. 发明授权

US06799137B2 Wafer temperature measurement method for plasma environments 有权
标题翻译：等离子体环境的晶圆温度测量方法
公开(公告)号：US06799137B2
公开(公告)日：2004-09-28
申请号：US10197230
申请日：2002-07-16
申请人： Charles W. Schietinger , Ronald A. Palfenier
发明人： Charles W. Schietinger , Ronald A. Palfenier
IPC分类号： G01K1130
CPC分类号： A61B17/34 , A61B17/3423 , A61B34/72 , G01J1/4204 , G01J5/0003 , G01J5/0007 , G01J5/02 , G01J5/026 , G01J5/0265 , G01J5/027 , G01J5/08 , G01J5/0806 , G01J5/0818 , G01J5/0821 , G01J5/0862 , G01J5/0893 , G01J5/522 , G01J2005/0048 , G01J2005/068 , G01K11/006
摘要： The temperature of a semiconductor wafer (160) is measured while undergoing processing in a plasma (168) environment. At least two pyrometers (162, 164) receive radiation from, respectively, the semiconductor wafer and the plasma in a plasma process chamber. The first pyrometer receives radiation from either the front or rear surface of the wafer, and the second pyrometer receives radiation from the plasma. Both pyrometers may be sensitive to the same radiation wavelength. A controller (170) receives signals from the first and second pyrometers and calculates a corrected wafer emission, which is employed in the Planck Equation to calculate the wafer temperature. Alternatively, both pyrometers are positioned beneath the wafer with the first pyrometer sensitive to a first wavelength where the wafer is substantially opaque to plasma radiation, and the second pyrometer is sensitive to a wavelength where the wafer is substantially transparent to plasma radiation.
摘要翻译：在等离子体（168）环境中进行处理时测量半导体晶片（160）的温度。至少两个高温计（162,164）分别从等离子体处理室中的半导体晶片和等离子体接收辐射。第一高温计从晶片的前表面或后表面接收辐射，而第二高温计接收来自等离子体的辐射。两个高温计可能对相同的辐射波长敏感。控制器（170）从第一和第二高温计接收信号，并计算校正的晶圆发射，其在普朗克方程中用于计算晶片温度。或者，两个高温计位于晶片下方，其中第一高温计对第一波长敏感，其中晶片对于等离子体辐射基本上是不透明的，并且第二高温计对于等离子体辐射基本上透明的波长敏感。

6. 发明授权

US5166080A Techniques for measuring the thickness of a film formed on a substrate 失效
标题翻译：用于测量在基底上形成的膜的厚度的技术
公开(公告)号：US5166080A
公开(公告)日：1992-11-24
申请号：US692578
申请日：1991-04-29
申请人： Charles W. Schietinger , Bruce E. Adams
发明人： Charles W. Schietinger , Bruce E. Adams
IPC分类号： G01B11/06 , G01J5/00 , G01N21/47 , G01N21/84 , H01L21/22 , H01L21/26 , H01L21/324
CPC分类号： G01B11/0658 , G01J5/0003 , G01J5/0007 , G01N21/474 , G01N21/8422 , G01N2021/4742
摘要： The thickness of a thin film on a substrate surface is determined by measuring its emissivity and temperature with a non-contact optical technique and then calculating the film thickness from these measurements. The thickness of the film can be determined by this technique in situ, while it is being formed and substantially in real time, thus allowing the measurement to control the film forming process. This has application to controlling the formation of dielectric and other material layers on a semiconductor substrate in the course of manufacturing electornic integrate circuits, including automatically terminating the process at its endpoint when the layer has reached a desired thickness.
摘要翻译：通过使用非接触光学技术测量其发射率和温度，然后从这些测量计算膜厚度来确定衬底表面上的薄膜的厚度。薄膜的厚度可以通过这种技术原位确定，同时它被形成并基本上实时地进行，从而允许测量来控制成膜过程。这适用于在制造电性集成电路的过程中控制在半导体衬底上的电介质层和其它材料层的形成，包括当层已经达到所需厚度时在其端点自动终止该工艺。

7. 发明授权

US5769540A Non-contact optical techniques for measuring surface conditions 失效
公开(公告)号：US5769540A
公开(公告)日：1998-06-23
申请号：US180852
申请日：1994-01-12
申请人： Charles W. Schietinger , Bruce E. Adams
发明人： Charles W. Schietinger , Bruce E. Adams
IPC分类号： G01B11/06 , G01J5/00 , G01J5/08 , G01J5/60 , G01N21/47 , G01N21/84 , G01J5/06 , H01L21/66
CPC分类号： G01B11/0658 , G01B11/06 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0821 , G01J5/0846 , G01J5/602 , G01N21/474 , G01N21/8422 , G01J2005/068 , G01N2021/4742
摘要： Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.

8. 发明授权

US5318362A Non-contact techniques for measuring temperature of radiation-heated objects 失效
标题翻译：用于测量辐射加热物体温度的非接触式技术
公开(公告)号：US5318362A
公开(公告)日：1994-06-07
申请号：US943927
申请日：1992-09-11
申请人： Charles W. Schietinger , Bruce E. Adams
发明人： Charles W. Schietinger , Bruce E. Adams
IPC分类号： G01J5/00 , G01J5/02 , G01J5/08 , G01J5/60 , H01L21/26 , H01L21/66 , G01J5/28
CPC分类号： G01J5/602 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0818 , G01J5/0834 , G01J2005/068 , G01J5/026
摘要： A non-contact pyrometric technique is provided for measuring the temperature and/or emissivity of an object that is being heated by electromagnetic radiation within the optical range. The measurement is made at short wavelengths for the best results. The measurement may be made at wavelengths within those of the heating optical radiation, and the resulting potential error from detecting heating radiation reflected from the object is avoided by one of two specific techniques. A first technique utilizes a mirror positioned between the heating lamps and the object, the mirror reflecting a narrow wavelength band of radiation in which the optical pyrometer detector operates. The second technique is to independently measure the a.c. ripple of the heating lamp radiation and subtract the background optical noise from the detected object signal in order to determine temperature and emissivity of the object. Both of these techniques can be combined, if desired.
摘要翻译：提供了一种非接触式高温测量技术，用于测量由光学范围内的电磁辐射加热的物体的温度和/或发射率。在短波长下进行测量以获得最佳效果。可以在加热光辐射的波长处进行测量，并且通过两种特定技术之一避免从检测从物体反射的加热辐射的结果的潜在误差。第一种技术利用位于加热灯和物体之间的镜子，镜子反射出光学高温计检测器工作的窄的辐射波长带。第二种技术是独立测量a.c. 加热灯辐射的波动，并从检测到的物体信号中减去背景光学噪声，以确定物体的温度和发射率。如果需要，可以组合这两种技术。

9. 发明授权

US5154512A Non-contact techniques for measuring temperature or radiation-heated objects 失效
标题翻译：用于测量温度或辐射加热物体的非接触式技术
公开(公告)号：US5154512A
公开(公告)日：1992-10-13
申请号：US507605
申请日：1990-04-10
申请人： Charles W. Schietinger , Bruce E. Adams
发明人： Charles W. Schietinger , Bruce E. Adams
IPC分类号： G01J5/00 , G01J5/02 , G01J5/08 , G01J5/60 , H01L21/26 , H01L21/66
CPC分类号： G01J5/602 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0818 , G01J5/0834 , G01J2005/068 , G01J5/026
摘要： A non-contact pyrometric technique is provided for measuring the temperature and/or emissivity of an object that is being heated by electromagnetic radiation within the optical range. The measurement is made at short wavelengths for the best results. The measurement may be made at wavelengths within those of the heating optical radiation, and the resulting potential error from detecting heating radiation reflected from the object is avoided by one of two specific techniques. A first technique utilizes a mirror positioned between the heating lamps and the object, the mirror reflecting a narrow wavelength band of radiation in which the optical pyrometer detector operates. The second technique is to independently measure the a.c. ripple of the heating lamp radiation and subtract the background optical noise from the detected object signal in order to determine temperature and emissivity of the object. Both of these techniques can be combined, if desired.
摘要翻译：提供了一种非接触式高温测量技术，用于测量由光学范围内的电磁辐射加热的物体的温度和/或发射率。在短波长下进行测量以获得最佳效果。可以在加热光辐射的波长处进行测量，并且通过两种特定技术之一避免从检测从物体反射的加热辐射的结果的潜在误差。第一种技术利用位于加热灯和物体之间的镜子，镜子反射出光学高温计检测器工作的窄的辐射波长带。第二种技术是独立测量a.c. 加热灯辐射的波动，并从检测到的物体信号中减去背景光学噪声，以确定物体的温度和发射率。如果需要，可以组合这两种技术。

10. 发明授权

US5490728A Non-contact optical techniques for measuring surface conditions 失效
标题翻译：用于测量表面条件的非接触式光学技术
公开(公告)号：US5490728A
公开(公告)日：1996-02-13
申请号：US180641
申请日：1994-01-12
申请人： Charles W. Schietinger , Bruce E. Adams
发明人： Charles W. Schietinger , Bruce E. Adams
IPC分类号： G01B11/06 , G01J5/00 , G01J5/08 , G01J5/60 , G01N21/47 , G01N21/84 , G01J5/06 , H01L21/66
CPC分类号： G01B11/06 , G01B11/0658 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0815 , G01J5/0818 , G01J5/0821 , G01J5/0846 , G01J5/0878 , G01J5/089 , G01J5/602 , G01N21/474 , G01N21/8422 , G01J2005/068 , G01J5/026 , G01N2021/4742
摘要： Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.
摘要翻译：使用非接触光学技术确定衬底（11）表面的热，光学，物理和化学特性，其包括用具有纹波强度特性（51）的辐射照射（23）表面，然后测量组合强度（53 ）由基板表面改性后的辐射和从表面发射的辐射。从该测量可以准确确定发射率，反射率，温度，表面组成，表面上形成的任何层的存在及其厚度。它们可以在原位和实质上实时制备，从而允许测量控制（39,41）处理基底表面的各种过程。这对于半导体晶片加工和金属加工具有显着的适用性。

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