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1. 发明申请

US20110132220A1 POLYMER PEN LITHOGRAPHY 有权
标题翻译：聚合物平版印刷
公开(公告)号：US20110132220A1
公开(公告)日：2011-06-09
申请号：US12989279
申请日：2009-04-25
申请人： Chad A. Mirkin , Fengwei Huo , Zijian Zheng , Gengfeng Zheng
发明人： Chad A. Mirkin , Fengwei Huo , Zijian Zheng , Gengfeng Zheng
IPC分类号： B41F33/00 , B05D3/00 , C03C25/24
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , Y10S977/856 , Y10S977/874 , Y10S977/878 , Y10S977/887 , Y10S977/888 , Y10S977/902
摘要： The disclosure relates to methods of printing indicia on a substrate using a tip array comprised of elastomeric, compressible polymers. The tip array can be prepared using conventional photolithographic methods and can be tailored to have any desired number and/or arrangement of tips. Numerous copies (e.g., greater than 15,000, or greater than 11 million) of a pattern can be made in a parallel fashion in as little as 40 minutes.
摘要翻译：本公开涉及使用由弹性体，可压缩聚合物组成的尖端阵列在基底上印刷标记的方法。尖端阵列可以使用常规光刻方法制备，并且可以被定制成具有任何期望的数量和/或尖端的布置。可以在短短40分钟的时间内以平行的方式制作多种图案（例如，大于15,000，或大于1100万）。

2. 发明授权

US09372397B2 Polymer pen lithography 有权
标题翻译：聚合物笔光刻
公开(公告)号：US09372397B2
公开(公告)日：2016-06-21
申请号：US12989279
申请日：2009-04-25
申请人： Chad A. Mirkin , Fengwei Huo , Zijian Zheng , Gengfeng Zheng
发明人： Chad A. Mirkin , Fengwei Huo , Zijian Zheng , Gengfeng Zheng
IPC分类号： G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , Y10S977/856 , Y10S977/874 , Y10S977/878 , Y10S977/887 , Y10S977/888 , Y10S977/902
摘要： The disclosure relates to methods of printing indicia on a substrate using a tip array comprised of elastomeric, compressible polymers. The tip array can be prepared using conventional photolithographic methods and can be tailored to have any desired number and/or arrangement of tips. Numerous copies (e.g., greater than 15,000, or greater than 11 million) of a pattern can be made in a parallel fashion in as little as 40 minutes.
摘要翻译：本公开涉及使用由弹性体，可压缩聚合物组成的尖端阵列在基底上印刷标记的方法。尖端阵列可以使用常规光刻方法制备，并且可以被定制成具有任何期望的数量和/或尖端的布置。可以在短短40分钟的时间内以平行的方式制作多种图案（例如，大于15,000，或大于1100万）。

3. 发明申请

US20110305996A1 Beam Pen Lithography 有权
标题翻译：光笔平版印刷
公开(公告)号：US20110305996A1
公开(公告)日：2011-12-15
申请号：US13202142
申请日：2010-02-18
申请人： Chad A. Mirkin , Gengfeng Zheng , Fengwei Huo
发明人： Chad A. Mirkin , Gengfeng Zheng , Fengwei Huo
IPC分类号： G03F7/20 , B05D3/12 , G03F7/26 , G01N21/01 , G01Q70/06
CPC分类号： G03F7/2051 , G03F7/70291 , G03F7/70383 , G03F7/70466 , G03F7/70525 , G03F7/70958
摘要： The disclosure relates to methods of beam pen lithography using a tip array having a plurality of transparent, elastomeric, reversibly-deformable tips coated with a blocking layer and apertures defined in the blocking layer to expose tip ends of the tips in the array. The tip array can be used to perform a photolithography process in which the tips are illuminated with a radiation that is channeled through the tips and out the apertures to expose a photosensitive substrate. Also disclosed are tip arrays formed of polymers and gels, apparatus including the tip arrays and radiation sources, and related apparatus for selectively masking tips in the tip array from radiation emitted from the radiation source.
摘要翻译：本公开涉及使用具有多个透明，弹性，可逆变形的尖端的尖端阵列的光笔笔光刻方法，所述尖端涂覆有阻挡层和限定在阻挡层中的孔，以暴露阵列中尖端的尖端。尖端阵列可以用于执行光刻工艺，其中尖端被通过尖端引导的辐射照射并且出射孔以暴露感光基底。还公开了由聚合物和凝胶形成的尖端阵列，包括尖端阵列和辐射源的装置以及用于从辐射源发射的辐射中选择性地遮蔽尖端阵列中的尖端的相关装置。

4. 发明授权

US09021611B2 Beam pen lithography 有权
标题翻译：光笔光刻
公开(公告)号：US09021611B2
公开(公告)日：2015-04-28
申请号：US13202142
申请日：2010-02-18
申请人： Chad A. Mirkin , Gengfeng Zheng , Fengwei Huo
发明人： Chad A. Mirkin , Gengfeng Zheng , Fengwei Huo
IPC分类号： G03F7/20
CPC分类号： G03F7/2051 , G03F7/70291 , G03F7/70383 , G03F7/70466 , G03F7/70525 , G03F7/70958
摘要： The disclosure relates to methods of beam pen lithography using a tip array having a plurality of transparent, elastomeric, reversibly-deformable tips coated with a blocking layer and apertures defined in the blocking layer to expose tip ends of the tips in the array. The tip array can be used to perform a photolithography process in which the tips are illuminated with a radiation that is channeled through the tips and out the apertures to expose a photosensitive substrate. Also disclosed are tip arrays formed of polymers and gels, apparatus including the tip arrays and radiation sources, and related apparatus for selectively masking tips in the tip array from radiation emitted from the radiation source.
摘要翻译：本公开涉及使用具有多个透明，弹性，可逆变形的尖端的尖端阵列的光笔笔光刻方法，所述尖端涂覆有阻挡层和限定在阻挡层中的孔，以暴露阵列中尖端的尖端。尖端阵列可以用于执行光刻工艺，其中尖端被通过尖端引导的辐射照射并且出射孔以暴露感光基底。还公开了由聚合物和凝胶形成的尖端阵列，包括尖端阵列和辐射源的装置以及用于从辐射源发射的辐射中选择性地遮蔽尖端阵列中的尖端的相关装置。

5. 发明申请

US20120167262A1 SILICON PEN NANOLITHOGRAPHY 有权
标题翻译：硅笔笔纳米尺度
公开(公告)号：US20120167262A1
公开(公告)日：2012-06-28
申请号：US13375361
申请日：2010-06-04
申请人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
发明人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
IPC分类号： G01Q70/14 , G01Q70/16
CPC分类号： G03F7/0002 , B81B2203/0361 , B81B2207/056 , B81C1/00111 , B81C1/0046 , B81C2201/0154 , B81C2201/0185 , B82Y10/00 , B82Y40/00 , Y10S977/732
摘要： Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.
摘要翻译：公开了使用具有连接到背衬层的多个笔的尖端阵列的光刻方法，其中尖端可以包括金属，准金属和/或半导电材料，并且背衬层可以包括弹性体聚合物。尖端阵列可用于执行光刻工艺，其中尖端涂覆有当尖端与衬底表面接触时沉积到衬底上的油墨（例如，图案化组合物）。尖端可以容易地平整到基底上，并且可以通过背衬层的光反射的变化和/或在尖端与基底表面接触时靠近尖端附近来光学地监测流平。

6. 发明授权

US08961853B2 Silicon pen nanolithography 有权
标题翻译：硅笔纳米光刻
公开(公告)号：US08961853B2
公开(公告)日：2015-02-24
申请号：US13375361
申请日：2010-06-04
申请人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
发明人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
IPC分类号： B29C59/02 , G03F7/00 , B81C1/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B81B2203/0361 , B81B2207/056 , B81C1/00111 , B81C1/0046 , B81C2201/0154 , B81C2201/0185 , B82Y10/00 , B82Y40/00 , Y10S977/732
摘要： Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.
摘要翻译：公开了使用具有连接到背衬层的多个笔的尖端阵列的光刻方法，其中尖端可以包括金属，准金属和/或半导电材料，并且背衬层可以包括弹性体聚合物。尖端阵列可用于执行光刻工艺，其中尖端涂覆有当尖端与衬底表面接触时沉积到衬底上的油墨（例如，图案化组合物）。尖端可以容易地平整到基底上，并且可以通过背衬层的光反射的变化和/或在尖端与基底表面接触时靠近尖端附近来光学地监测流平。

7. 发明申请

US20090166222A1 ELECTRICAL NANOTRAPS FOR SPECTROSCOPICALLY CHARACTERIZING BIOMOLECULES WITHIN 审中-公开
标题翻译：用于光谱学表征生物分子的电子纳米粒子
公开(公告)号：US20090166222A1
公开(公告)日：2009-07-02
申请号：US12206057
申请日：2008-09-08
申请人： Chad A. Mirkin , Gengfeng Zheng , Lidong Qin
发明人： Chad A. Mirkin , Gengfeng Zheng , Lidong Qin
IPC分类号： C12Q1/68 , G01N27/26
CPC分类号： G01N21/658 , B82Y15/00 , G01N21/6428 , G01N33/54346
摘要： A method that combines on-wire-lithography (OWL) nanogaps, an electric field concentrating technique, and surface enhanced Raman spectroscopy (SERS) is disclosed for sensitive detection of analytes with small sample sizes in a chip format.
摘要翻译：公开了一种组合在线光刻（OWL）纳米片，电场浓缩技术和表面增强拉曼光谱（SERS）的方法，用于以芯片格式的小样品尺寸的分析物的敏感检测。

8. 发明申请

US20100152057A1 HIGH-SENSITIVITY NANOSCALE WIRE SENSORS 有权
标题翻译：高灵敏性纳米线传感器
公开(公告)号：US20100152057A1
公开(公告)日：2010-06-17
申请号：US12312740
申请日：2007-11-19
申请人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
发明人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
IPC分类号： C40B30/04 , H01L29/772 , C40B60/12
CPC分类号： G01N33/552 , B82Y15/00 , B82Y30/00 , G01N27/4146
摘要： The present invention generally relates to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. The invention provides a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross-sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length (lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
摘要翻译：本发明一般涉及用于确定疑似存在于样品中的分析物的纳米级线器件和方法。本发明提供了一种具有改进的灵敏度的纳米线，因为线中的载流子浓度由外部栅极电压控制，使得纳米级线具有大于纳米线的平均横截面尺寸的德拜屏蔽长度当纳米线被暴露于怀疑含有分析物的溶液时。通过调整施加到FET结构的栅极电压来调节与纳米线内的载流子浓度（p）相关联的德拜筛选长度（λ），使得纳米线中的载流子耗尽。

9. 发明授权

US08575663B2 High-sensitivity nanoscale wire sensors 有权
标题翻译：高灵敏度纳米级线传感器
公开(公告)号：US08575663B2
公开(公告)日：2013-11-05
申请号：US12312740
申请日：2007-11-19
申请人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
发明人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
IPC分类号： G01N27/403
CPC分类号： G01N33/552 , B82Y15/00 , B82Y30/00 , G01N27/4146
摘要： The present invention generally relates, in some aspects, to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. Certain embodiments of the invention provide a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross-sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length (lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted, in some cases, by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
摘要翻译：本发明在一些方面通常涉及纳米尺度线装置和用于确定疑似存在于样品中的分析物的方法。本发明的某些实施方案提供了具有改进的灵敏度的纳米线，因为线中的载流子浓度由外部栅极电压控制，使得纳米级线具有大于平均截面尺寸的德拜筛选长度当纳米线被暴露于怀疑含有分析物的溶液时的纳米线。在一些情况下，通过调节施加到FET结构的栅极电压，使得纳米尺度线中的载流子耗尽，调整与纳米尺度线内的载流子浓度（p）相关联的德拜筛选长度（λ）。

10. 发明申请

US20100112546A1 NANOSCALE SENSORS 有权
标题翻译：纳米传感器
公开(公告)号：US20100112546A1
公开(公告)日：2010-05-06
申请号：US12536269
申请日：2009-08-05
申请人： Charles M. Lieber , Fernando Patolsky , Gengfeng Zheng
发明人： Charles M. Lieber , Fernando Patolsky , Gengfeng Zheng
IPC分类号： C12Q1/70 , H01L29/66 , C07K17/14 , C07H21/00
CPC分类号： A61B5/14546 , A61B5/415 , A61B5/418 , A61B2018/00875 , A61B2562/0285 , C12Q1/6825 , C12Q1/6834 , G01N33/54353 , G01N33/6854 , G01N2333/96455 , C12Q2565/607 , C12Q2563/155 , C12Q2563/125
摘要： Various aspects of the present invention generally relate to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample, and systems and methods of immobilizing entities such as reaction entities relative to nanoscale wires. In one aspect, a nucleic acid, such as DNA, may be immobilized relative to a nanoscale wire, and in some cases, grown from the nanoscale wire. In certain embodiments, the nucleic acid may interact with entities such as other nucleic acids, proteins, etc., and in some cases, such interactions may be reversible. As an example, an enzyme such as telomerase may be allowed to bind to DNA immobilized relative to a nanoscale wire. The telomerase may extend the length of the DNA, for instance, by reaction with free deoxynucleotide triphosphates in solution; additionally, various properties of the nucleic acid may be determined, for example, using electric field interactions between the nucleic acid and the nanoscale wire. In another aspect, the invention provides systems and methods for attaching entities such as nucleic acids, receptors such as gangliosides, or surfactants to a nanoscale wire, for example, using aldehyde-producing reactions or hydrophobic interactions. In some aspects, certain systems and methods of the present invention may be used to determine an analyte suspected to be present in a sample, for example, a toxin, a virus, or a small molecule. Systems and methods of using such nanoscale wires are disclosed in other aspects of the invention, for example, within a microarray. Still other aspects of the invention include assays, sensors, kits, and/or other devices that include such nanoscale wires, methods of making and/or using functionalized nanoscale wires (for example, in drug screening or high-throughput screening), and the like.
摘要翻译：本发明的各个方面通常涉及用于确定疑似存在于样品中的分析物的纳米级线器件和方法，以及相对于纳米尺寸线固定诸如反应实体的实体的系统和方法。在一个方面，可以相对于纳米级线固定核酸，例如DNA，并且在一些情况下，从纳米线生长。在某些实施方案中，核酸可与诸如其他核酸，蛋白质等的实体相互作用，并且在一些情况下，这种相互作用可以是可逆的。例如，可以使诸如端粒酶之类的酶与相对于纳米尺度线固定的DNA结合。端粒酶可以延长DNA的长度，例如通过与游离的脱氧核苷酸三磷酸酯在溶液中反应; 此外，可以例如使用核酸和纳米线之间的电场相互作用来确定核酸的各种性质。在另一方面，本发明提供了用于将实体（例如核酸，诸如神经节苷脂或受体表面活性剂等受体）附着到纳米线上的系统和方法，例如使用醛产生反应或疏水相互作用。在一些方面，本发明的某些系统和方法可用于确定疑似存在于样品中的分析物，例如毒素，病毒或小分子。在本发明的其他方面，例如在微阵列内公开了使用这种纳米线的系统和方法。本发明的另外其它方面包括测定，传感器，试剂盒和/或包括这种纳米线的其它装置，制备和/或使用官能化的纳米线（例如在药物筛选或高通量筛选中）的方法，以及喜欢。

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