专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100152057A1 HIGH-SENSITIVITY NANOSCALE WIRE SENSORS 有权
标题翻译：高灵敏性纳米线传感器
公开(公告)号：US20100152057A1
公开(公告)日：2010-06-17
申请号：US12312740
申请日：2007-11-19
申请人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
发明人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
IPC分类号： C40B30/04 , H01L29/772 , C40B60/12
CPC分类号： G01N33/552 , B82Y15/00 , B82Y30/00 , G01N27/4146
摘要： The present invention generally relates to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. The invention provides a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross-sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length (lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
摘要翻译：本发明一般涉及用于确定疑似存在于样品中的分析物的纳米级线器件和方法。本发明提供了一种具有改进的灵敏度的纳米线，因为线中的载流子浓度由外部栅极电压控制，使得纳米级线具有大于纳米线的平均横截面尺寸的德拜屏蔽长度当纳米线被暴露于怀疑含有分析物的溶液时。通过调整施加到FET结构的栅极电压来调节与纳米线内的载流子浓度（p）相关联的德拜筛选长度（λ），使得纳米线中的载流子耗尽。

2. 发明授权

US08575663B2 High-sensitivity nanoscale wire sensors 有权
标题翻译：高灵敏度纳米级线传感器
公开(公告)号：US08575663B2
公开(公告)日：2013-11-05
申请号：US12312740
申请日：2007-11-19
申请人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
发明人： Charles M. Lieber , Xuan Gao , Gengfeng Zheng
IPC分类号： G01N27/403
CPC分类号： G01N33/552 , B82Y15/00 , B82Y30/00 , G01N27/4146
摘要： The present invention generally relates, in some aspects, to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. Certain embodiments of the invention provide a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross-sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length (lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted, in some cases, by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
摘要翻译：本发明在一些方面通常涉及纳米尺度线装置和用于确定疑似存在于样品中的分析物的方法。本发明的某些实施方案提供了具有改进的灵敏度的纳米线，因为线中的载流子浓度由外部栅极电压控制，使得纳米级线具有大于平均截面尺寸的德拜筛选长度当纳米线被暴露于怀疑含有分析物的溶液时的纳米线。在一些情况下，通过调节施加到FET结构的栅极电压，使得纳米尺度线中的载流子耗尽，调整与纳米尺度线内的载流子浓度（p）相关联的德拜筛选长度（λ）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式