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    • 1. 发明授权
    • Method of manufacturing storage electrode in semiconductor device
    • 在半导体器件中制造存储电极的方法
    • US06348377B2
    • 2002-02-19
    • US09867602
    • 2001-05-31
    • Cha Deok DongSeung Cheol LeeSang Wook ParkDong Jin Kim
    • Cha Deok DongSeung Cheol LeeSang Wook ParkDong Jin Kim
    • H01L218242
    • H01L28/91H01L21/76895H01L28/84
    • A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder. By depositing an amorphous silicon film on the inner wall of the cylinder-type capacitor and Si-rich tungsten silicide film on the outer wall, the surface area of the inner wall expands through normal SMPS and a rugged tungsten silicide film is formed on the outer wall. Spacing between cells is preserved, while generation of a bridge is prevented.
    • 半导体器件中的圆柱形存储电极通过在多氧化物膜中形成接触孔并在膜上和孔中形成第一薄膜来制造。 接下来,在第一薄膜上形成芯氧化膜和抗反射涂膜,以确定气缸的高度。 然后通过蚀刻抗反射涂膜,芯氧化物膜和第一薄膜使得暴露多晶氧化物膜形成图案。 在总体结构上形成第二薄膜,在第二薄膜上形成硅化钨层。 然后通过对硅化钨膜和第二薄膜进行毯式蚀刻来形成圆筒的内壁和外壁,使得芯氧化膜暴露。 在去除核心氧化物膜之后,进行选择性亚稳态多晶硅(SMPS)工艺,使得在圆筒的内壁和外壁处产生不同的晶粒生长。 然后通过使圆筒退火形成存储电极。 通过在圆筒型电容器的内壁和外壁上的富Si硅化钨膜上沉积非晶硅膜,内壁的表面积通过正常的SMPS膨胀,并且在外部形成坚固的硅化钨膜 壁。 保留了单元间的间隔,同时防止了桥的产生。
    • 2. 发明授权
    • Storage electrode including tungsten silicide wall and large grained wall
    • 存储电极包括硅化钨壁和大颗粒壁
    • US06653680B2
    • 2003-11-25
    • US10042213
    • 2002-01-11
    • Cha Deok DongSeung Cheol LeeSang Wook ParkDong Jin Kim
    • Cha Deok DongSeung Cheol LeeSang Wook ParkDong Jin Kim
    • H01L2994
    • H01L28/91H01L21/76895H01L28/84
    • A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder. By depositing an amorphous silicon film on the inner wall of the cylinder-type capacitor and Si-rich tungsten silicide film on the outer wall, the surface area of the inner wall expands through normal SMPS and a rugged tungsten silicide film is formed on the outer wall. Spacing between cells is preserved, while generation of a bridge is prevented.
    • 半导体器件中的圆柱形存储电极通过在多氧化物膜中形成接触孔并在膜上和孔中形成第一薄膜来制造。 接下来,在第一薄膜上形成芯氧化膜和抗反射涂膜,以确定气缸的高度。 然后通过蚀刻抗反射涂膜,芯氧化物膜和第一薄膜使得暴露多晶氧化物膜形成图案。 在总体结构上形成第二薄膜,在第二薄膜上形成硅化钨层。 然后通过对硅化钨膜和第二薄膜进行毯式蚀刻来形成圆筒的内壁和外壁,使得芯氧化膜暴露。 在去除核心氧化物膜之后,进行选择性亚稳态多晶硅(SMPS)工艺,使得在圆筒的内壁和外壁处产生不同的晶粒生长。 然后通过使圆筒退火形成存储电极。 通过在圆筒型电容器的内壁和外壁上的富Si硅化钨膜上沉积非晶硅膜,内壁的表面积通过正常的SMPS膨胀,并且在外部形成坚固的硅化钨膜 壁。 保留了单元间的间隔,同时防止了桥的产生。