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    • 2. 发明授权
    • Wafer processing apparatus having independently controllable energy
sources
    • 具有独立可控能量源的晶片处理装置
    • US5138973A
    • 1992-08-18
    • US282917
    • 1988-12-05
    • Cecil J. DavisRhett B. JuchaJoseph D. LuttmerRudy L. YorkLee M. LoewensteinRobert T. MatthewsRandall C. Hildenbrand
    • Cecil J. DavisRhett B. JuchaJoseph D. LuttmerRudy L. YorkLee M. LoewensteinRobert T. MatthewsRandall C. Hildenbrand
    • C23C16/48C23C16/517C23C16/54
    • C23C16/482C23C16/517C23C16/54
    • A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.
    • 一种处理装置和方法,其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质,但处于晶片上游的处理气流中,并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低,远距离等离子体可以产生活化物质,因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的,该等离子体位于真空室内,但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的,使得紫外线发生等离子体具有其自身的气体进料,并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器,使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。
    • 3. 发明授权
    • Processing method using both a remotely generated plasma and an in-situ
plasma with UV irradiation
    • 使用远程产生的等离子体和原位等离子体与UV照射的处理方法
    • US5248636A
    • 1993-09-28
    • US892460
    • 1992-06-02
    • Cecil J. DavisRhett B. JuchaJoseph D. LuttmerRudy L. YorkLee M. LoewensteinRobert T. MatthewsRandall C. Hildenbrand
    • Cecil J. DavisRhett B. JuchaJoseph D. LuttmerRudy L. YorkLee M. LoewensteinRobert T. MatthewsRandall C. Hildenbrand
    • C23C16/48C23C16/517C23C16/54
    • C23C16/54C23C16/482C23C16/517
    • A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.
    • 一种处理装置和方法,其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质,但处于晶片上游的处理气流中,并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低,远距离等离子体可以产生活化物质,因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的,使得紫外线发生等离子体具有其自身的气体进料,并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器,使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作,但是该透明窗口未被制成 足够厚以充当真空密封。