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1. 发明授权

US4838984A Method for etching films of mercury-cadmium-telluride and zinc sulfid 失效
标题翻译：镉 - 碲化镉和硫化锌蚀刻薄膜的方法
公开(公告)号：US4838984A
公开(公告)日：1989-06-13
申请号：US74451
申请日：1987-07-16
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
IPC分类号： H01L21/465
CPC分类号： H01L21/465
摘要： A film of mercury-cadmium-telluride (HgCdTe) or zinc sulfide (ZnS) is anisotropically etched utilizing a remote plasma and an in situ plasma utilizing a gas mixture which includes a hydrogen containing and/or an alkyl bearing gas providing an anisotropic etch.
摘要翻译：使用包括含氢气和/或含烷烃的气体提供各向异性蚀刻的气体混合物，利用远程等离子体和原位等离子体对各种各向异性蚀刻汞 - 碲化镉（HgCdTe）或硫化锌（ZnS）的膜。

2. 发明授权

US4877757A Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma 失效
标题翻译：使用远程氧等离子体顺序清洗和钝化GaAs衬底的方法
公开(公告)号：US4877757A
公开(公告)日：1989-10-31
申请号：US282927
申请日：1988-12-07
申请人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
发明人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
IPC分类号： H01L21/00 , H01L21/465 , H01L21/471
CPC分类号： H01L21/67028 , H01L21/465 , H01L21/471 , Y10S148/017 , Y10S148/021 , Y10S148/056
摘要： A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
摘要翻译：一种用于在汞镉碲化物晶片上沉积钝化层的处理装置和方法，其利用单个处理室向室提供氧气，其中激发能由远程产生的等离子体提供，以便除去任何有机残余物，然后提供硫化物或硒化物气体与原位产生的紫外线能量照射晶片以产生钝化层。

3. 发明授权

US4837113A Method for depositing compound from group II-VI 失效
标题翻译：从II-VI组沉积化合物的方法
公开(公告)号：US4837113A
公开(公告)日：1989-06-06
申请号：US203562
申请日：1988-05-25
申请人： Joseph D. Luttmer , Rudy L. York , Patricia B. Smith , Cecil J. Davis
发明人： Joseph D. Luttmer , Rudy L. York , Patricia B. Smith , Cecil J. Davis
IPC分类号： C23C16/30 , H01L21/00
CPC分类号： H01L21/67017 , C23C16/306 , Y10S438/935
摘要： A II-VI compound, such as zinc sulfide, is deposited from a gaseous mixture in a reactor which is compatible with a vacuum processing system which includes vacuum wafer transport. Two manifolds are used, each connected to a supply of one or more reagent gases, to improve uniformity.
摘要翻译：将II-VI化合物如硫化锌从气态混合物沉积在与包括真空晶片输送的真空处理系统相容的反应器中。使用两个歧管，每个歧管连接到一个或多个试剂气体的供应以改善均匀性。

4. 发明授权

US5077092A Method and apparatus for deposition of zinc sulfide films 失效
标题翻译：锌沉积薄膜沉积的方法和装置
公开(公告)号：US5077092A
公开(公告)日：1991-12-31
申请号：US374883
申请日：1989-06-30
申请人： Patricia B. Smith , Larry D. Hutchins , Rudy L. York , Joseph D. Luttmer , Cecil J. Davis
发明人： Patricia B. Smith , Larry D. Hutchins , Rudy L. York , Joseph D. Luttmer , Cecil J. Davis
IPC分类号： C23C16/30 , C23C16/44 , H01L21/205 , H01L31/0216 , H01L31/10 , H01L31/18 , H01L33/00
CPC分类号： C23C16/306 , H01L31/02161 , H01L31/1828 , Y02E10/543
摘要： The deposition of zinc sulfide films (16) using dimethylzinc (46) and hydrogen sulfide (44) in a vacuum processor reactor (50) provides a low temperature process applicable for high volume production of infrared focal planes. These layers (16) of zinc sulfide are used as insulators and infrared anti-reflective coatings which are free of contamination relative to physical vapor deposited ZnS films. The zinc sulfide layers (16) are formed by evacuating a chamber (62) and mixing hydrogen sulfide gas (44) and dimethylzinc gas (46) at specific operating conditions until the desired ZnS film thickness is obtained. The rate of growth of the zinc sulfide (16) film is controlled by varying the temperature, pressure, and the relative flow rates of the hydrogen sulfide gas (44) and the dimethylzinc gas (46).

5. 发明授权

US4855160A Method for passivating wafer 失效
标题翻译：钝化晶圆的方法
公开(公告)号：US4855160A
公开(公告)日：1989-08-08
申请号：US203563
申请日：1988-05-26
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York
IPC分类号： H01L21/471 , H01L21/473 , H01L21/677
CPC分类号： H01L21/6779 , H01L21/471 , H01L21/473
摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.
摘要翻译：一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。压力容器可以非常小，即具有总加压体积，其几乎所有内部点可以装载到腔室中的工件或晶片中的一个或两厘米。 HgCdTe通过利用氧气和水蒸气进行氧化而被钝化，或硫化来源被硫化。晶片和气体由位于处理室垂直壁上的加热器加热。

6. 发明授权

US5017511A Method for dry etching vias in integrated circuit layers 失效
标题翻译：集成电路层干法蚀刻通孔的方法
公开(公告)号：US5017511A
公开(公告)日：1991-05-21
申请号：US377514
申请日：1989-07-10
申请人： Jerome L. Elkind , Patricia B. Smith , Larry D. Hutchins , Joseph D. Luttmer , Rudy L. York , Julie S. England
发明人： Jerome L. Elkind , Patricia B. Smith , Larry D. Hutchins , Joseph D. Luttmer , Rudy L. York , Julie S. England
IPC分类号： H01L21/465 , H01L21/467 , H01L21/4757
CPC分类号： H01L21/465 , H01L21/467 , H01L21/47573 , Y10S148/051
摘要： A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector.

7. 发明授权

US5157000A Method for dry etching openings in integrated circuit layers 失效
标题翻译：集成电路层干蚀刻开孔方法
公开(公告)号：US5157000A
公开(公告)日：1992-10-20
申请号：US652506
申请日：1991-02-08
申请人： Jerome L. Elkind , Patricia B. Smith , Larry D. Hutchins , Joseph D. Luttmer , Rudy L. York , Julie S. England
发明人： Jerome L. Elkind , Patricia B. Smith , Larry D. Hutchins , Joseph D. Luttmer , Rudy L. York , Julie S. England
IPC分类号： H01L21/465 , H01L21/467 , H01L21/4757
CPC分类号： H01L21/465 , H01L21/467 , H01L21/47573 , Y10S148/051
摘要： A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector.
摘要翻译：公开了通过蚀刻剂物质（52）与碲化汞镉（HgCdTe）或硫化锌（ZnS）层（42）的反应可以形成通孔（50）的方法。活性气体（20）优选为在二次电等离子体反应器（100）中激发的氢气或甲烷气体，二极管等离子体反应器（100）具有施加到两个平行电极之一的RF电源（13）。蚀刻发生在驻留在ZnS或HgCdTe层（42）上的光致抗蚀剂图案（44）中的选定区域中。在干蚀刻之后用湿蚀刻剂（54）湿蚀刻层（42），通过使壁（48）更平滑并允许将通孔（50）膨胀到适当的尺寸所需的尺寸来改善通孔（50）基于HgCdTe的红外探测器的运行。

8. 发明授权

US4988533A Method for deposition of silicon oxide on a wafer 失效
标题翻译：在晶圆上沉积氧化硅的方法
公开(公告)号：US4988533A
公开(公告)日：1991-01-29
申请号：US203583
申请日：1988-05-27
申请人： Dean W. Freeman , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
发明人： Dean W. Freeman , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
IPC分类号： C23C16/40
CPC分类号： C23C16/402
摘要： A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
摘要翻译：使用单个处理室在温度敏感晶片上沉积氧化硅层的处理装置和方法向室提供氧化亚氮气体，其中激发能由远程产生的等离子体提供，同时将硅烷气体与照射晶片同时原位产生的紫外线能量以产生氧化硅层。

9. 发明授权

US07067441B2 Damage-free resist removal process for ultra-low-k processing 有权
标题翻译：用于超低k处理的无损伤抗蚀剂去除工艺
公开(公告)号：US07067441B2
公开(公告)日：2006-06-27
申请号：US10702949
申请日：2003-11-06
申请人： Patricia B. Smith , Phillip D. Matz
发明人： Patricia B. Smith , Phillip D. Matz
IPC分类号： H01L21/469
CPC分类号： H01L21/76802 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31133 , H01L21/31138
摘要： A process for removing resist (114) from a CDO dielectric material (110) that uses a non-damaging plasma in a reducing atmosphere under high power and using a structure (150) or other means to limit ions from the plasma from reaching the surface of the CDO material (110).
摘要翻译：一种从CDO电介质材料（110）去除抗蚀剂（114）的方法，该方法在高功率下在还原气氛中使用非破坏性的等离子体，并且使用结构（150）或其它方法来限制来自等离子体的离子到达表面的CDO材料（110）。

10. 发明授权

US5318666A Method for via formation and type conversion in group II and group VI materials 失效
标题翻译： Ⅱ组和VI组材料通孔形成和类型转换的方法
公开(公告)号：US5318666A
公开(公告)日：1994-06-07
申请号：US049755
申请日：1993-04-19
申请人： Jerome L. Elkind , Glennis J. Orloff , Patricia B. Smith
发明人： Jerome L. Elkind , Glennis J. Orloff , Patricia B. Smith
IPC分类号： H01L21/461 , H01L21/465 , H01L21/475 , H01L27/146 , H01L21/00
CPC分类号： H01L21/76898 , H01L21/461 , H01L21/465 , H01L21/475 , H01L23/481 , H01L27/1467 , H01L2924/0002 , Y10S438/916 , Y10S438/971
摘要： A method of forming an n-p junction in a body (44, 44a, 44b) formed of Group II and Group VI elements. The body (44, 44a, 44b) initially is of p-type conductivity characteristic, and a dry reactive etching process is employed for forming a via (60, 60a, 60b) in the body by a chemical reaction which is also effective to type convert a portion of the body adjacent the via. An n-doped region (64, 64a, 64b) is thereby formed within the body around the via and between the via and the remaining, p-doped region of the body, thereby defining an n-p junction. In one embodiment, the body is mounted on an electrical device (50, 50a, 50b) having an input contact pad (58, 58a, 58b), and an electrically conductive layer (62, 46a, 90) is formed in connection with the contact pad and the n-doped region adjacent the via. In one application, a plurality of the n-p doped via junctions are formed in laterally spaced orientation for providing an array of infrared radiation sensitive photodiodes (24, 24a, 24b), the n-doped region of each diode having electrical connection with a respective contact pad of the electrical device.
摘要翻译：一种在由组II和VI组成的体（44,44a，44b）中形成n-p结的方法。本体（44,44a，44b）最初是p型导电特性，采用干式反应蚀刻工艺，通过化学反应在体内形成通孔（60,60a，60b）转换邻近通孔的身体的一部分。因此，在体内围绕通孔和通孔与本体的剩余的p掺杂区域之间在体内形成n掺杂区域（64,64a，64b），由此限定n-p结。在一个实施例中，主体安装在具有输入接触焊盘（58,58a，58b）的电气设备（50,50a，50b）上，并且导电层（62,46a，90）与接触焊盘和邻近通孔的n掺杂区域。在一个应用中，多个np掺杂的通孔结形成为横向间隔的取向以提供红外辐射敏感光电二极管阵列（24,24a，24b），每个二极管的n掺杂区域与相应的触点电连接电气设备的垫。

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