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1. 发明申请

US20050051162A1 Increased dosage metered dose inhaler 有权
标题翻译：增加剂量计量剂量吸入器
公开(公告)号：US20050051162A1
公开(公告)日：2005-03-10
申请号：US10698025
申请日：2003-10-30
申请人： Carlos Schuler , Andrew Clark , Kevin Walsh , William Alston
发明人： Carlos Schuler , Andrew Clark , Kevin Walsh , William Alston
IPC分类号： A61M15/00 , B65D83/14 , A61M11/00
CPC分类号： B65D83/54 , A61M15/009
摘要： An aerosolization apparatus comprises a container containing a pharmaceutical formulation, the pharmaceutical formulation comprising an active agent and a propellant. The aerosolization apparatus further comprises a metering chamber in communication with the container, the metering chamber adapted to hold a metered amount of the pharmaceutical formulation, a valve to allow the metered amount of the pharmaceutical formulation to be released from the metering chamber when the valve is actuated, and a pressurizer that applies pressure to the pharmaceutical formulation in the metering chamber while the pharmaceutical formulation is being released from the metering chamber. In one version, the metering chamber is sized so that at least 2 mg, and preferably at least 5 mg, of the active agent is be aerosolized for delivery to a user during inhalation.
摘要翻译：雾化装置包括容纳药物制剂的容器，药物制剂包含活性剂和推进剂。雾化装置还包括与容器连通的计量室，计量室适于容纳计量量的药物制剂，阀，以允许计量量的药物制剂在计量室内从计量腔室释放时，阀门为以及当药物制剂从计量室释放时向计量室中的药物制剂施加压力的加压器。在一个版本中，计量室的尺寸设定为使得至少2mg，优选至少5mg的活性剂被雾化以在吸入期间输送给使用者。

2. 发明申请

US20050016533A1 Systems and methods for aerosolizing pharmaceutical formulations 审中-公开
标题翻译：雾化药物制剂的系统和方法
公开(公告)号：US20050016533A1
公开(公告)日：2005-01-27
申请号：US10601127
申请日：2003-06-19
申请人： Carlos Schuler , Steve Paboojian , Derrick Tuttle , Adrian Smith , Dennis Rasmussen , Aneesh Bakshi , Andrew Clark , Brian Ward , William Alston , Kevin Nason
发明人： Carlos Schuler , Steve Paboojian , Derrick Tuttle , Adrian Smith , Dennis Rasmussen , Aneesh Bakshi , Andrew Clark , Brian Ward , William Alston , Kevin Nason
IPC分类号： A61M15/00 , A61M16/20 , A61M16/00
CPC分类号： A61M15/0028 , A61M15/002 , A61M15/0036 , A61M15/0051 , A61M15/0068 , A61M15/0083 , A61M15/0091 , A61M15/0093 , A61M15/0096 , A61M16/0493 , A61M16/0495 , A61M16/0866 , A61M16/206 , A61M16/208 , A61M2202/064
摘要： Systems and methods are provided for aerosolizing a pharmaceutical formulation. According to one method, respiratory gases are prevented from flowing to the lungs when attempting to inhale. Then, respiratory gases are abruptly permitted to flow to the lungs. The flow of respiratory gases may then be used to extract a pharmaceutical formulation from a receptacle and to place the pharmaceutical formulation within the flow of respiratory gases to form an aerosol.
摘要翻译：提供了用于雾化药物制剂的系统和方法。根据一种方法，当试图吸气时，防止呼吸气体流向肺部。然后，呼吸道气体突然被允许流向肺部。呼吸气体的流动然后可用于从容器中提取药物制剂并将药物制剂置于呼吸气体流中以形成气溶胶。

3. 发明申请

US20050056275A1 Systems and methods for powder from receptacles 审中-公开
标题翻译：从容器的粉末的系统和方法
公开(公告)号：US20050056275A1
公开(公告)日：2005-03-17
申请号：US10727077
申请日：2003-12-02
申请人： Frank Ingle , Steve Paboojian , Carlos Schuler , Andrew Clark
发明人： Frank Ingle , Steve Paboojian , Carlos Schuler , Andrew Clark
IPC分类号： A61M13/00 , A61M15/00 , B05B7/14 , B05B11/06 , B65D75/36 , A61M11/00 , A61M16/00
CPC分类号： B05B11/062 , A61M11/001 , A61M15/002 , A61M15/0028 , A61M15/0036 , A61M15/0041 , A61M2202/064 , A61M2205/073 , B05B7/1413 , B65D75/366 , B65D2575/362
摘要： A method for aerosolizing a powder utilizes a receptacle having a cavity containing a powder. An access end of an extraction tube is inserted into the cavity, and an inlet opening is formed in the receptacle. A pressurized gas is flowed through the inlet opening, through the cavity and through the extraction tube to move the powder in the cavity into the extraction tube where the powder is entrained in the gas to form an aerosol.
摘要翻译：用于雾化粉末的方法利用具有包含粉末的空腔的容器。抽吸管的入口端插入空腔中，并且在容器中形成入口。加压气体通过入口开口流过空腔并通过抽出管，将空腔中的粉末移动到提取管中，将粉末夹带在气体中形成气溶胶。

4. 发明授权

US06606992B1 Systems and methods for aerosolizing pharmaceutical formulations 有权
标题翻译：雾化药物制剂的系统和方法
公开(公告)号：US06606992B1
公开(公告)日：2003-08-19
申请号：US09583312
申请日：2000-05-30
申请人： Carlos Schuler , Steve Paboojian , Derrick J. Tuttle , Adrian E. Smith , Dennis R. Rasmussen , Aneesh Bakshi , Andrew Clark , Brian R. S. Ward , William W. Alston, Jr. , Kevin S. Nason
发明人： Carlos Schuler , Steve Paboojian , Derrick J. Tuttle , Adrian E. Smith , Dennis R. Rasmussen , Aneesh Bakshi , Andrew Clark , Brian R. S. Ward , William W. Alston, Jr. , Kevin S. Nason
IPC分类号： A61M1500
CPC分类号： A61M15/0028 , A61M15/002 , A61M15/0036 , A61M15/0051 , A61M15/0068 , A61M15/0083 , A61M15/0091 , A61M15/0093 , A61M15/0096 , A61M16/0493 , A61M16/0495 , A61M16/0866 , A61M16/206 , A61M16/208 , A61M2202/064
摘要： Systems and methods are provided for aerosolizing a pharmaceutical formulation. According to one method, respiratory gases are prevented from flowing to the lungs when attempting to inhale. Then, respiratory gases are abruptly permitted to flow to the lungs. The flow of respiratory gases may then be used to extract a pharmaceutical formulation from a receptacle and to place the pharmaceutical formulation within the flow of respiratory gases to form an aerosol.
摘要翻译：提供了用于雾化药物制剂的系统和方法。根据一种方法，当试图吸气时，防止呼吸气体流向肺部。然后，呼吸道气体突然被允许流向肺部。呼吸气体的流动然后可用于从容器中提取药物制剂并将药物制剂置于呼吸气体流中以形成气溶胶。

5. 发明授权

US08408200B2 Flow resistance modulated aerosolized active agent delivery 失效
标题翻译：阻流调制气雾剂活性剂输送
公开(公告)号：US08408200B2
公开(公告)日：2013-04-02
申请号：US09414384
申请日：1999-10-07
申请人： Andrew Clark , Carlos Schuler , Steve Paboojian
发明人： Andrew Clark , Carlos Schuler , Steve Paboojian
IPC分类号： A61M16/00 , A61M15/00 , A62B9/02
CPC分类号： A61M15/00 , A61M2016/0021 , A61M2202/064
摘要： The present invention is directed to methods and devices for delivering an active agent formulation to the lung of a human patient. The active agent formulation may be in dry powder form, it may be nebulized, or it may be in admixture with a propellant. The active agent formulation is delivered to a patient at a low inspiratory flow rate for an initial period of time to increase bioavailability of the active agent.
摘要翻译：本发明涉及用于将活性剂制剂递送到人类患者的肺的方法和装置。活性剂制剂可以是干粉形式，它可以是雾化的，或者它可以与推进剂混合。活性剂制剂以低吸入流速在初始时期递送给患者，以提高活性剂的生物利用度。

6. 发明授权

US06679256B2 Systems and methods for extracting powders from receptacles 失效
标题翻译：从容器中提取粉末的系统和方法
公开(公告)号：US06679256B2
公开(公告)日：2004-01-20
申请号：US09731368
申请日：2000-12-06
申请人： Frank W. Ingle , Steve Paboojian , Carlos Schuler , Andrew Clark
发明人： Frank W. Ingle , Steve Paboojian , Carlos Schuler , Andrew Clark
IPC分类号： A61M1500
CPC分类号： B05B11/062 , A61M11/001 , A61M15/002 , A61M15/0028 , A61M15/0036 , A61M15/0041 , A61M2202/064 , A61M2205/073 , B05B7/1413 , B65D75/366 , B65D2575/362
摘要： A method for aerosolizing a powder utilizes a receptacle having a cavity containing a powder. An access end of an extraction tube is inserted into the cavity, and an inlet opening is formed in the receptacle. A pressurized gas is flowed through the inlet opening, through the cavity and through the extraction tube to move the powder in the cavity into the extraction tube where the powder is entrained in the gas to form an aerosol.
摘要翻译：用于雾化粉末的方法利用具有包含粉末的空腔的容器。抽吸管的入口端插入空腔中，并且在容器中形成入口。加压气体通过入口开口流过空腔并通过抽出管，将空腔中的粉末移动到提取管中，将粉末夹带在气体中形成气溶胶。

7. 发明申请

US20160181093A1 III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER 审中-公开
标题翻译：具有保护顶层的多层缓冲层的III-N外延
公开(公告)号：US20160181093A1
公开(公告)日：2016-06-23
申请号：US14576500
申请日：2014-12-19
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
IPC分类号： H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02483 , H01L21/02505 , H01L21/02516 , H01L21/0254
摘要： A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.
摘要翻译：一种在硅衬底上生长III-N材料的方法，包括以下步骤：在硅衬底上外延生长REO材料的缓冲层，在衬底的表面上外延生长REN材料层，并外延生长薄的保护层的REO在REN材料层的表面上。底物和结构可以方便地转移到另一种生长机器中，其中进行以下步骤：将REO保护层原位转化或修饰为具有氮处理的REN层，并在其上外延生长III-N材料层改性保护层。

8. 发明授权

US09173649B2 Low profile distractor apparatuses 有权
标题翻译：低调牵引器装置
公开(公告)号：US09173649B2
公开(公告)日：2015-11-03
申请号：US13435022
申请日：2012-03-30
申请人： Andrew Clark , David Chella , Jesse Drake
发明人： Andrew Clark , David Chella , Jesse Drake
IPC分类号： A61B17/02 , A61B17/60 , A61B17/66 , A61F5/042 , A61F5/04 , A61F5/37
CPC分类号： A61B17/025 , A61B17/60 , A61B17/66 , A61B2017/0268 , A61B2017/0275 , A61F5/04 , A61F5/042 , A61F5/3776
摘要： Embodiments of low profile distractor apparatuses are disclosed. The distractor apparatuses generally comprise a mounting body, a tensioning mechanism coupled to the mounting body and a distractor arm coupled to the tensioning mechanism and pivotally coupled to the mounting body for rotation relative to the mounting body. The tensioning axis of the tensioning mechanism is non-coaxial with an effector axis of the distractor arm and a distraction force applied with the distractor arm is translated to the effector axis. This enables the distractor apparatus to be positioned relative to a patient such that the tensioning mechanism is offset from the long axis of the limb of the patient thereby facilitating improved access to the distal portions of the limb.
摘要翻译：公开了低剖面牵引装置的实施例。牵引装置通常包括安装体，联接到安装体的张紧机构和联接到张紧机构的牵引臂，枢转地联接到安装体以相对于安装体旋转。张紧机构的张紧轴线与牵引臂的效应器轴线不同轴，并且用牵引臂施加的牵引力平移到效应器轴线。这使得牵引器装置能够相对于患者定位，使得张紧机构偏离患者肢体的长轴线，从而便于改善对肢体的远端部分的接近。

9. 发明授权

US08835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform 有权
标题翻译： IIIOxNy在单晶SOI衬底和IIIn生长平台上
公开(公告)号：US08835955B2
公开(公告)日：2014-09-16
申请号：US13221474
申请日：2011-08-30
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L33/60 , H01L29/786 , H01L33/00 , H01L29/78 , H01L21/762 , H01L21/02 , H01L33/12 , H01L33/46
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

10. 发明申请

US20140231818A1 AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE 有权
标题翻译： GaN / REO /硅衬底结构上的AlN电极
公开(公告)号：US20140231818A1
公开(公告)日：2014-08-21
申请号：US13772169
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶稀土氧化物层。稀土氧化物与硅衬底的表面基本上晶格匹配。第一层III-N材料位于稀土氧化物层的表面上。氮化铝（AlN）的层间位于III-N材料的第一层的表面上，并且在氮化铝层间的表面上设置附加的III-N层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。在最终的III-N层上生长AlN的覆盖层，并且在AlN覆盖层上生长具有LED结构和HEMT结构之一的III-N层材料。

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