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1. 发明授权

US06174213B1 Fluorescent lamp and method of manufacturing same 失效
标题翻译：荧光灯及其制造方法
公开(公告)号：US06174213B1
公开(公告)日：2001-01-16
申请号：US09388038
申请日：1999-09-01
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
IPC分类号： B05D722
CPC分类号： C03C17/3417 , C03C17/253 , C03C2217/21 , C03C2217/211 , C03C2217/24 , C03C2217/244 , C23C18/1216 , C23C18/1225 , C23C18/1275 , C23C18/1283 , C23C18/1291
摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.
摘要翻译：将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。金属氧化物薄膜层可以是导体，保护层或提供其他功能。膜的厚度为20nm至500nm。可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。

2. 发明授权

US06686489B2 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06686489B2
公开(公告)日：2004-02-03
申请号：US10037877
申请日：2001-11-09
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

3. 发明授权

US06376691B1 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06376691B1
公开(公告)日：2002-04-23
申请号：US09388044
申请日：1999-09-01
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

4. 发明授权

US06198225B1 Ferroelectric flat panel displays 失效
标题翻译：铁电平板显示屏
公开(公告)号：US06198225B1
公开(公告)日：2001-03-06
申请号：US09326838
申请日：1999-06-07
申请人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： G09G310
CPC分类号： G09G3/367 , G09G3/22 , H01J1/30 , H01J2201/306 , H01J2329/00
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.
摘要翻译：平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。铁电薄膜中的功能梯度增强了电子发射。可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。荧光体可以夹在电介质和铁电体之间以增强发射。

5. 发明授权

US06441414B1 Ferroelectric field effect transistor, memory utilizing same, and method of operating same 失效
标题翻译：铁电场效应晶体管，利用其的存储器及其操作方法
公开(公告)号：US06441414B1
公开(公告)日：2002-08-27
申请号：US09170590
申请日：1998-10-13
申请人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Jeffrey W. Bacon , Joseph D. Cuchiaro , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223 , H01L21/28291 , H01L29/78391
摘要： A ferroelectric non-volatile memory in which each memory cell consists of a single electronic element, a ferroelectric FET. The FET includes a source, drain, gate and substrate. The fact that the drain to source current, lds, is always negative if a substrate to drain bias, Vss, of 0.8 volts or more is applied, permits the creation of a read and write truth table. A gate voltage equal to one truth table logic value is applied via a column decoder and a substrate bias equal to another truth table logic value is applied via a row decoder to write to the memory a resultant lds logic state, which can be read whenever a voltage is placed across the source and drain.
摘要翻译：一种铁电非易失性存储器，其中每个存储单元由单个电子元件，铁电FET组成。 FET包括源极，漏极，栅极和衬底。如果施加0.8伏或更高的衬底到漏极偏压Vss，则漏源到源电流lds总是为负，这允许创建读写真值表。通过列解码器施加等于一个真值表逻辑值的栅极电压，并且经由行解码器施加等于另一个真值表逻辑值的衬底偏置，以向存储器写入结果lds逻辑状态，其可以在每当电压跨过源极和漏极放置。

6. 发明授权

US06495709B1 Liquid precursors for aluminum oxide and method making same 失效
标题翻译：氧化铝液体前体及其制备方法
公开(公告)号：US06495709B1
公开(公告)日：2002-12-17
申请号：US09526786
申请日：2000-03-16
申请人： Jolanta Celinska , Jeffrey W. Bacon , Akihiro Matsuda , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Jeffrey W. Bacon , Akihiro Matsuda , Carlos A. Paz de Araujo
IPC分类号： C07F506
CPC分类号： C23C30/00 , C03C17/25 , C03C2217/214 , C03C2218/113 , C07C51/412 , C07C53/128
摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.
摘要翻译：用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。

7. 发明授权

US06815223B2 Low thermal budget fabrication of ferroelectric memory using RTP 有权
公开(公告)号：US06815223B2
公开(公告)日：2004-11-09
申请号：US10302441
申请日：2002-11-22
申请人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01G706
CPC分类号： H01L28/55 , C30B29/32 , C30B29/68
摘要： A precursor for forming a thin film of layered superlattice material is applied to an integrated circuit substrate. The precursor coating is heated using rapid thermal processing (RTP) with a ramping rate of 100° C./second at a hold temperature in a range of from 500° C. to 900° C. for a cumulative heating time not exceeding 30 minutes, and preferably less than 5 minutes. In fabricating a ferroelectric memory cell, the coating is heated in oxygen using RTP, then a top electrode layer is formed, and then the substrate including the coating is heated using RTP in oxygen or in nonreactive gas after forming the top electrode layer. The thin film of layered superlattice material preferably comprises strontium bismuth tantalate or strontium bismuth tantalum niobate, and preferably has a thickness in a range of from 25 nm to 120 nm. The process of fabricating a thin film of layered superlattice material typically has a thermal budget value not exceeding 960,000° C.-sec, preferably less than 50,000° C.-sec.

8. 发明授权

US06781184B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
标题翻译：用于保护金属氧化物免受氢降解的阻挡层
公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译：集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。

9. 发明授权

US07038206B2 Infrared sensor and imager with differential ferroelectric cells 有权
标题翻译：红外传感器和具有差分铁电单元的成像器
公开(公告)号：US07038206B2
公开(公告)日：2006-05-02
申请号：US10960876
申请日：2004-10-06
申请人： Zheng Chen , Carlos A. Paz de Araujo , Jolanta Celinska , Larry D. McMillan
发明人： Zheng Chen , Carlos A. Paz de Araujo , Jolanta Celinska , Larry D. McMillan
IPC分类号： G01J5/02
CPC分类号： G01J5/34
摘要： A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.
摘要翻译：高温计单元包括第一铁电电容器，第二铁电电容器和用于确定第一和第二铁电电容器之间的极化电荷，电压或电流之间的差的差分电路。电池被脉冲多次，并且连接到差分电路的积分器电路提供表示积分差的增强的输出信号。红外成像器由高温计单元的阵列形成，每个单元中的一个铁电电容器暴露于红外源，而另一个铁电电容器不暴露于红外源。

10. 发明授权

US07064374B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
公开(公告)号：US07064374B2
公开(公告)日：2006-06-20
申请号：US10872895
申请日：2004-06-21
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27/108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

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