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    • 5. 发明申请
    • ENHANCING INTERACTIVE VOICE RESPONSE SYSTEMS VIA MESSAGING
    • 通过消息传递增强交互式语音响应系统
    • US20080095330A1
    • 2008-04-24
    • US11877952
    • 2007-10-24
    • Ling JinYu Fei MaPei SunJun ShenChun Sheng Chu
    • Ling JinYu Fei MaPei SunJun ShenChun Sheng Chu
    • H04M11/00
    • H04M3/493H04M7/0048H04M2203/251
    • Disclosed are a method, information processing system, and computer storage program product for providing communication between a user electronic device and an Interactive Voice Response (“IVR”) system. At least one selection from a user corresponding to at least one menu in an IVR system is received. The selection comprises an instruction selection sequence. At least one voice message and at least one visual message associated with the voice message, each corresponding to the instruction sequence are generated in response to the receiving. The voice message and visual message are transmitted to the electronic device associated with the user. The visual message is to be displayed to the user on an electronic device associated with the user while the voice message is being played to the user.
    • 公开了一种用于在用户电子设备和交互式语音响应(“IVR”)系统之间提供通信的方法,信息处理系统和计算机存储程序产品。 接收来自与IVR系统中的至少一个菜单对应的用户的至少一个选择。 选择包括指令选择序列。 响应于接收,生成与语音消息相关联的至少一个语音消息和至少一个与消息对应的视讯。 语音消息和可视消息被发送到与用户相关联的电子设备。 在向用户播放语音消息的同时,在与用户相关联的电子设备上向用户显示视觉消息。
    • 8. 发明申请
    • METHOD FOR DEFECT REDUCTION FOR MEMORY CELL CAPACITORS
    • 用于存储单元电容器的减少缺陷的方法
    • US20100003794A1
    • 2010-01-07
    • US12259138
    • 2008-10-27
    • Ling JinDah Cheng LinChin Hsing YuMeng Jan CherngHuan Sung Fu
    • Ling JinDah Cheng LinChin Hsing YuMeng Jan CherngHuan Sung Fu
    • H01L21/8242
    • H01L28/91H01L27/10852H01L27/10894
    • A method for forming a cylindrical stack capacitor structure. A semiconductor substrate is provided. Storage node structures are formed in a memory cell region. A dielectric layer is formed overlying the storage node structures. A patterning and a first etching process expose the storage nodes. A polysilicon layer and a rugged polysilicon layer are formed overlying the exposed storage nodes. The memory cell region is masked, exposing a peripheral region. A chemical dry etch process removes the rugged polysilicon and the polysilicon layers in the peripheral region. The rugged polysilicon and the polysilicon layers are planarized followed by a dielectric recess. The resulting cylindrical stack capacitor structures are substantially free of defects from rugged polysilicon remaining in the peripheral region thereby improving device yield and process window.
    • 一种形成圆柱形堆叠电容器结构的方法。 提供半导体衬底。 存储节点结构形成在存储单元区域中。 在存储节点结构上形成介电层。 图案化和第一蚀刻工艺暴露存储节点。 在暴露的存储节点上形成多晶硅层和坚固的多晶硅层。 掩蔽存储单元区域,暴露外围区域。 化学干蚀刻工艺去除了外围区域中的坚固的多晶硅和多晶硅层。 凹凸多晶硅和多晶硅层被平坦化,随后是电介质凹陷。 所得到的圆柱形堆叠电容器结构基本上没有残留在外围区域中的粗糙多晶硅的缺陷,从而提高了器件产量和工艺窗口。