会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Multiple wavelength surface-emitting laser device and method for its manufacture
    • 多波长表面发射激光器件及其制造方法
    • US06795457B2
    • 2004-09-21
    • US09867709
    • 2001-05-31
    • Young-jin SongSeung-ho NamByoung-lyong ChoiJae-ho You
    • Young-jin SongSeung-ho NamByoung-lyong ChoiJae-ho You
    • H01S310
    • H01S5/423H01S5/0425H01S5/18311H01S5/18361H01S5/4087
    • A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.
    • 提供了通过连续制造工艺配置有基板和形成在基板上的多个表面发射激光器的多波长表面发射激光器件。 每个表面发射激光器包括在衬底上的底部反射层,其掺杂了一种类型的杂质,并且由具有不同折射率的交替的半导体材料层组成; 形成在底部反射层上的有源层; 在活性层上掺杂另一种杂质的中间层; 形成在所述中间层上以具有通过其发出光的窗口的顶部电极; 以及介电反射层,其中具有不同折射率的电介质材料在中间层和/或顶部电极上交替层叠到适于所需共振波长的厚度,并且通过调节介电反射层的厚度来控制谐振波长 。
    • 2. 发明授权
    • Apparatus and method for forming aperture of vertical cavity surface emitting laser by selective oxidation
    • 通过选择性氧化形成垂直腔表面发射激光的孔径的装置和方法
    • US06495381B2
    • 2002-12-17
    • US09751938
    • 2001-01-02
    • Young-jin SongSeung-ho Nam
    • Young-jin SongSeung-ho Nam
    • H01S308
    • H01S5/18311H01S5/0042H01S5/0201
    • An apparatus and method for forming an aperture of a vertical cavity surface emitting laser (VCSEL) by selective oxidation, in which resonance peak variations during the formation of the aperture can be measured using an optical spectrum analyzer, so that the size of the aperture can be precisely adjusted. The aperture forming apparatus includes: a furnace having a first window and a second window for transmitting light, and a stage for supporting a wafer for the VCSEL with a pre-oxide layer where an aperture is to be formed; a light source placed outside the furnace, for emitting light through the first window onto the top of the wafer seated on the stage; and an optical spectrum analyzer for detecting the light intensity by receiving light reflecting from the top of the wafer for the VCSEL and passing through the second window.
    • 一种用于通过选择性氧化形成垂直腔表面发射激光器(VCSEL)的孔径的装置和方法,其中可以使用光谱分析仪测量在形成孔径期间的共振峰值变化,使得孔径尺寸 精确调整。 孔形成装置包括:具有用于透射光的第一窗口和第二窗口的炉,以及用于将VCSEL的晶片支撑在其上将形成孔的预氧化物层的台; 位于炉外的光源,用于通过第一窗口将光发射到位于台架上的晶片的顶部; 以及光谱分析器,用于通过接收从用于VCSEL的晶片顶部反射并穿过第二窗口的光来检测光强度。