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    • 4. 发明申请
    • WORKPIECE WETTING AND CLEANING
    • 工作湿润和清洁
    • US20120052204A1
    • 2012-03-01
    • US12873002
    • 2010-08-31
    • Bryan PuchKyle M. HansonMarvin BerntPaul R. McHughGregory J. Wilson
    • Bryan PuchKyle M. HansonMarvin BerntPaul R. McHughGregory J. Wilson
    • C23C16/56
    • H01L21/6719H01L21/67057H01L21/67126
    • In a workpiece processor, a head is moveable onto a bowl to form a process chamber. A workpiece can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liquid. Vacuum may be applied to the chamber to reduce the pressure within the chamber, thereby reducing the boiling temperature of the liquid and allowing processing at lower temperatures. In a separate method for prewetting a workpiece, a humid gas is provided into the process chamber and condenses on the workpiece. In another separate method for wetting a workpiece, liquid water is provided into the bowl, with the workpiece above the liquid water. Water vapor is created in the process chamber by applying vacuum to the process chamber. The vapor wets the workpiece. The workpiece is then further wetted by submerging the workpiece into the liquid water.
    • 在工件处理器中,头可移动到碗上以形成处理室。 工件可以通过将工件浸入碗中的液体浴中,然后煮沸液体而在处理器中进行清洁。 真空可以施加到室以减小室内的压力,从而降低液体的沸腾温度并允许在较低温度下进行加工。 在用于预润湿工件的单独方法中,将湿气提供到处理室中并在工件上冷凝。 在用于润湿工件的另一种分开的方法中,液体水被提供到碗中,工件在液态水上方。 通过对处理室施加真空,在处理室中产生水蒸汽。 蒸汽润湿工件。 然后通过将工件浸入液体水中来进一步润湿工件。
    • 6. 发明申请
    • METHODS FOR UNIFORMLY ETCHING FILMS ON A SEMICONDUCTOR WAFER
    • 用于半导体波形上均匀蚀刻膜的方法
    • US20080070411A1
    • 2008-03-20
    • US11533450
    • 2006-09-20
    • John GhekiereMarvin Bernt
    • John GhekiereMarvin Bernt
    • H01L21/302
    • H01L21/31111H01L21/02087H01L21/32134
    • A chemical mixture etches chemically different materials, layers, or films on the surface of a semiconductor wafer or other workpiece at approximately the same rate. The different layers may include, for example, a first material, having a first chemical composition, encapsulated within or sandwiched between one or more materials having chemical compositions different from the first material. For example, a TiN layer may be encapsulated within or sandwiched between two or more TEOS layers. By etching away the different layers at approximately the same rate, undercutting of the encapsulated or sandwiched layer is substantially or entirely prevented. Flaking, liftoff, and similar defects are avoided.
    • 化学混合物以大致相同的速率在半导体晶片或其他工件的表面上化学地刻蚀化学上不同的材料,层或膜。 不同的层可以包括例如具有第一化学组成的第一材料,其包封在一种或多种具有不同于第一材料的化学组成的材料中或夹在其中。 例如,TiN层可以封装在两个或更多个TEOS层内或夹在两个或多个TEOS层之间。 通过以大致相同的速率蚀刻掉不同的层,基本上或完全地防止了封装或夹层的底切。 避免了剥落,脱落和类似缺陷。