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1. 发明申请

US20070193607A1 METHODS AND APPARATUS FOR CLEANING EDGES OF A SUBSTRATE 审中-公开
标题翻译：用于清洁基板边缘的方法和装置
公开(公告)号：US20070193607A1
公开(公告)日：2007-08-23
申请号：US11739201
申请日：2007-04-24
申请人： John Ghekiere , Aaron Arvidson , Bruce Fender , Craig Meuchel , Raoul Schroder , Brian Aegerter , Ron Flink , Jason Rye
发明人： John Ghekiere , Aaron Arvidson , Bruce Fender , Craig Meuchel , Raoul Schroder , Brian Aegerter , Ron Flink , Jason Rye
IPC分类号： C23G1/00 , B08B3/00 , B08B7/00
CPC分类号： H01L21/67051 , C23G5/00 , H01L21/02052
摘要： In methods and apparatus for cleaning a wafer, a cleaning liquid is sprayed or jetted in a direction generally tangent to the circular edge of a spinning wafer. This enhances removal of contaminants from areas near the edge. Re-deposition of contaminant pieces or particles back onto the wafer is reduced because the direction of the spray carries the contaminant off of the wafer. Insoluble contaminant films, such as post etch residue, may be removed via one or more of the pressure of the cleaning liquid, the effects of higher process temperatures from heating the cleaning liquid, and by the chemical composition of the cleaning liquid.
摘要翻译：在清洗晶片的方法和装置中，清洗液体在与旋转晶片的圆形边缘大致相切的方向上喷射或喷射。这增强了从边缘附近的区域去除污染物。由于喷射方向将污染物从晶片上脱落，所以将污染物片或颗粒重新沉积回到晶片上被减少。可以通过清洗液体的一个或多个压力，加热清洗液体中较高工艺温度的影响以及清洗液体的化学成分来除去不溶性污染物膜，例如后蚀刻残留物。

2. 发明申请

US20080070411A1 METHODS FOR UNIFORMLY ETCHING FILMS ON A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于半导体波形上均匀蚀刻膜的方法
公开(公告)号：US20080070411A1
公开(公告)日：2008-03-20
申请号：US11533450
申请日：2006-09-20
申请人： John Ghekiere , Marvin Bernt
发明人： John Ghekiere , Marvin Bernt
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/02087 , H01L21/32134
摘要： A chemical mixture etches chemically different materials, layers, or films on the surface of a semiconductor wafer or other workpiece at approximately the same rate. The different layers may include, for example, a first material, having a first chemical composition, encapsulated within or sandwiched between one or more materials having chemical compositions different from the first material. For example, a TiN layer may be encapsulated within or sandwiched between two or more TEOS layers. By etching away the different layers at approximately the same rate, undercutting of the encapsulated or sandwiched layer is substantially or entirely prevented. Flaking, liftoff, and similar defects are avoided.
摘要翻译：化学混合物以大致相同的速率在半导体晶片或其他工件的表面上化学地刻蚀化学上不同的材料，层或膜。不同的层可以包括例如具有第一化学组成的第一材料，其包封在一种或多种具有不同于第一材料的化学组成的材料中或夹在其中。例如，TiN层可以封装在两个或更多个TEOS层内或夹在两个或多个TEOS层之间。通过以大致相同的速率蚀刻掉不同的层，基本上或完全地防止了封装或夹层的底切。避免了剥落，脱落和类似缺陷。

3. 发明申请

US20170323806A1 WAFER PROFILING FOR ETCHING SYSTEM 审中-公开
公开(公告)号：US20170323806A1
公开(公告)日：2017-11-09
申请号：US15587840
申请日：2017-05-05
申请人： Jeffrey Chi Cheung , John Ghekiere , Jerry D. Leonhard , David P. Surdock , Benjamin Shafer , Ray Young
发明人： Jeffrey Chi Cheung , John Ghekiere , Jerry D. Leonhard , David P. Surdock , Benjamin Shafer , Ray Young
IPC分类号： H01L21/67 , H01L21/66
CPC分类号： H01L21/6708 , H01L21/67253 , H01L21/67259 , H01L21/67271 , H01L22/12 , H01L22/26
摘要： A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer, and a monitoring system comprising a probe movable laterally across the wafer on the support.

4. 发明申请

US20080060683A1 APPARATUS AND METHODS FOR CLEANING A WAFER EDGE 审中-公开
标题翻译：用于清洁波浪边的装置和方法
公开(公告)号：US20080060683A1
公开(公告)日：2008-03-13
申请号：US11530345
申请日：2006-09-08
申请人： Aaron W. Arvidson , John Ghekiere
发明人： Aaron W. Arvidson , John Ghekiere
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： H01L21/67051 , H01L21/02087
摘要： Apparatus removes contaminants from edge areas of a wafer by spinning the wafer. Nozzles spray or jet fluid onto both the first and second sides of the wafer, near the edge of the wafer. Typically the spray or jet is at an acute angle to the wafer surface. Contaminants are removed and re-deposition of removed contaminants is reduced or avoided. The nozzle locations and angles may be varied to change the areas on the wafer cleaned by the sprays or jets.
摘要翻译：装置通过旋转晶片从晶片的边缘区域去除污染物。喷嘴在晶片的边缘附近在晶片的第一和第二侧喷射或喷射流体。通常喷雾或射流与晶片表面呈锐角。去除污染物并减少或避免去除污染物的再沉积。可以改变喷嘴位置和角度以改变通过喷雾或喷嘴清洁的晶片上的区域。

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