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1. 发明授权

US07357138B2 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 失效
标题翻译：蚀刻高介电常数材料和清洁高介电常数材料沉积室的方法
公开(公告)号：US07357138B2
公开(公告)日：2008-04-15
申请号：US10723714
申请日：2003-11-26
申请人： Bing Ji , Stephen Andrew Motika , Ronald Martin Pearlstein , Eugene Joseph Karwacki, Jr. , Dingjun Wu
发明人： Bing Ji , Stephen Andrew Motika , Ronald Martin Pearlstein , Eugene Joseph Karwacki, Jr. , Dingjun Wu
IPC分类号： B08B9/00 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035
摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译：本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去来自底物的物质。

2. 发明授权

US07119032B2 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
公开(公告)号：US07119032B2
公开(公告)日：2006-10-10
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki, Jr. , David Allen Roberts
发明人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki, Jr. , David Allen Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

3. 发明授权

US07055263B2 Method for cleaning deposition chambers for high dielectric constant materials 失效
标题翻译：清洁高介电常数材料沉积室的方法
公开(公告)号：US07055263B2
公开(公告)日：2006-06-06
申请号：US10721719
申请日：2003-11-25
申请人： Dingjun Wu , Bing Ji , Stephen Andrew Motika , Eugene Joseph Karwacki, Jr.
发明人： Dingjun Wu , Bing Ji , Stephen Andrew Motika , Eugene Joseph Karwacki, Jr.
IPC分类号： F26B3/34
CPC分类号： C23C16/4405
摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.
摘要翻译：本文公开了一种用于干蚀刻和室清洁的高介电常数材料的方法。在本发明的一个方面，提供了一种清洁物质的方法，该方法包括介电常数大于来自反应器表面的至少一部分的二氧化硅的介电常数，包括：引入包含硼的第一气体混合物其中第一气体混合物与其中所含的物质反应以提供挥发性产物和含硼副产物; 将包含含氟反应剂的第二气体混合物引入反应器中，其中第二气体混合物与其中所含的含硼副产物反应形成挥发性产物; 并从反应器中除去挥发性产物。

4. 发明授权

US07371688B2 Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
标题翻译：从基底去除过渡金属三元和/或四元阻挡材料
公开(公告)号：US07371688B2
公开(公告)日：2008-05-13
申请号：US10942301
申请日：2004-09-15
申请人： Bing Ji , Martin Jay Plishka , Dingjun Wu , Peter Richard Badowski , Eugene Joseph Karwacki, Jr.
发明人： Bing Ji , Martin Jay Plishka , Dingjun Wu , Peter Richard Badowski , Eugene Joseph Karwacki, Jr.
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32135 , C23C16/4405 , C23G5/00 , H01L21/32136 , Y10S438/905
摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译：本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

5. 发明授权

US07267842B2 Method for removing titanium dioxide deposits from a reactor 失效
标题翻译：从反应器中除去二氧化钛沉积物的方法
公开(公告)号：US07267842B2
公开(公告)日：2007-09-11
申请号：US10800880
申请日：2004-03-15
申请人： Dingjun Wu , Bing Ji , Philip Bruce Henderson , Eugene Joseph Karwacki, Jr.
发明人： Dingjun Wu , Bing Ji , Philip Bruce Henderson , Eugene Joseph Karwacki, Jr.
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/405 , C23C14/083 , C23C14/564 , C23C16/4405
摘要： A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.
摘要翻译：本文公开了用于从用于清洁应用的制品中选择性除去含TiO 2的物质的方法。在一个实施方案中，提供了从制品中除去含TiO 2的物质的方法，包括：提供其上沉积有含TiO 2的物质的制品; 使物质与包含选自含氟清洗剂，含氯清洗剂及其混合物中的至少一种的反应性气体反应以形成挥发性产物; 并从制品中除去挥发性产物，从而从制品中除去物质。

6. 发明申请

US20080047579A1 Detecting the endpoint of a cleaning process 审中-公开
标题翻译：检测清洁过程的终点
公开(公告)号：US20080047579A1
公开(公告)日：2008-02-28
申请号：US11510190
申请日：2006-08-25
申请人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki
发明人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki
IPC分类号： B08B6/00 , B08B7/04
CPC分类号： B08B7/0035 , H01J37/32935 , H01J37/32963
摘要： A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.
摘要翻译：一种确定清洁方法的终点的方法，其中金属残留物从下面的表面除去，该金属残留物通过使残留物与残留物挥发并且易于侵蚀下面的表面的金属并使其挥发的清洁剂接触，如果清洁过程没有及时终止，并且其中包含下面的表面的金属与金属残余物的金属比清洁剂更有反应性，其改进包括在第挥发性金属的量与清洁剂的量从较低值增加到较高值。

7. 发明授权

US08399349B2 Materials and methods of forming controlled void 有权
标题翻译：形成受控空隙的材料和方法
公开(公告)号：US08399349B2
公开(公告)日：2013-03-19
申请号：US11693707
申请日：2007-03-29
申请人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
发明人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
IPC分类号： H01L21/4763
CPC分类号： H01L21/764 , H01L21/02115 , H01L21/02126 , H01L21/02172 , H01L21/02203 , H01L21/02205 , H01L21/02263 , H01L21/02274 , H01L21/02282 , H01L21/30604 , H01L21/31695 , H01L21/423 , H01L21/7682 , H01L2221/1047
摘要： The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
摘要翻译：本发明是一种在衬底内形成气隙的方法，该方法包括：提供衬底; 通过沉积至少一种牺牲材料前体沉积牺牲材料; 沉积复合层; 去除复合层中的致孔剂材料以形成多孔层并使分层的基底与去除介质接触，以基本上去除牺牲材料并在基底内提供气隙; 其中所述至少一种牺牲材料前体选自：有机致孔剂; 硅和极性溶剂可溶性金属氧化物及其混合物。

8. 发明申请

US20100022095A1 Selective Etching and Formation of Xenon Difluoride 有权
标题翻译：氙氟化物的选择性蚀刻和形成
公开(公告)号：US20100022095A1
公开(公告)日：2010-01-28
申请号：US12360588
申请日：2009-01-27
申请人： Dingjun Wu , Eugene Joseph Karwacki, JR. , Anupama Mallikarjunan , Andrew David Johnson
发明人： Dingjun Wu , Eugene Joseph Karwacki, JR. , Anupama Mallikarjunan , Andrew David Johnson
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/306 , C01B23/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/67028
摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
摘要翻译：本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体发电机及其混合物。

9. 发明授权

US08278222B2 Selective etching and formation of xenon difluoride 有权
标题翻译：选择性蚀刻和形成氙二氟化物
公开(公告)号：US08278222B2
公开(公告)日：2012-10-02
申请号：US12360588
申请日：2009-01-27
申请人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
发明人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/67028
摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
摘要翻译：本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体发电机及其混合物。

10. 发明申请

US20060040508A1 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
标题翻译：使用分层超晶格材料保护半导体加工设备的内部部件的方法
公开(公告)号：US20060040508A1
公开(公告)日：2006-02-23
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
发明人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译：本发明涉及在蚀刻和/或清洁过程中保护诸如等离子体反应器或反应物种发生器的半导体加工设备的内部部件抵抗物理和/或化学损伤的装置和方法。使用具有三种或更多种金属元素的层状超晶格材料，例如钽酸锶钡（SBT），在反应室的内部组分的表面上形成保护屏障。

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